evaluation of cots sige, soi, & mixed signal electronic ... electronic parts for extreme...

Evaluation of COTS SiGe, SOI, & Mixed Signal Electronic Parts for Extreme Temperature Use in NASA Missions

Richard L. PattersonNASA Glenn Research Center

Ahmad HammoudASRC Aerospace Corporation

1

National Aeronautics and Space Administration

NEPP Electronic Technology WorkshopJune 22-24, 2010

To be presented at the 1st NASA Electronic Parts and Packaging (NEPP) Program Electronic Technology Workshop June 22-24, 2010, NASA GSFC, Greenbelt, MD. 2

Introduction

• Brief description of NEPP Task # 10-281 (Continuing)“Reliability of SiGe, SOI, and Advanced Mixed Signal Devices for Cryogenic Space Missions”

• Goal, approach, schedule, and status of Task

• Technical highlights

• Plans


NEPP Task # 10-281 (Continuing)Reliability of SiGe, SOI, and Advanced Mixed Signal

Devices for Cryogenic Space MissionsDescription:

FY10 Plans:

Schedule: Deliverables:

Space exploration missions require electronics that operate under extreme temperatures. SiGe devices utilize band gap engineering in their design to enable low temperature operation, and SOI parts offer good radiation tolerance and high temperature operation capability. This task focuses on establishing reliability of SiGe, SOI, and advanced mixed signal devices for use in extreme temperature space exploration missions. COTS parts and flight-like hardware will also be evaluated by determining their performance under extreme temperatures and thermal cycling. The generated data will establish safe operating areas and identify degradation modes, and the information will be disseminated to mission planners and system designers to establish risk factors associated with the use of such parts at extreme temperature in space applications.

Identify and acquire COTS parts and flight-like hardware.

Determine part/circuit operational requirements.

Conduct screening tests at extreme temperatures.

Perform combined thermal/electrical tests.

Determine the effects of wide temperature thermal cycling.

Publish reports and disseminate information.

Issue technical reports documenting reliability of selected SiGe, SOI, and advanced mixed signal devices for extreme temperature operation.

Publish results on NEPP website and at professional conferences and disseminate information to mission planners and system designers.

Submit quarterly progress reports.

O N D J F M A M J J A SAcquire COTS & mission-related devicesScreen devices at extreme temperaturesDown-select promising devicesPerform thorough characterizationPerform thermal cycling on selected partsAnalyze & document resultsPublish BOK reports & disseminate info. ♦ ♦ ♦ ♦Propose 2011 follow-on task ♦

2009 2010


Goals

• Establish a technology base for the development of electronic systems, using COTS parts, capable of extreme temperature operation for space exploration missions

• Disseminate information and transfer technology to NASA mission groups and aerospace designers


Expected Impact to Community

Traditional approach to extreme temp operation

• Passive or active thermal control• Warm electronic box• Radioisotope heater units

Impact of “extreme temperature electronics”

• Simplify thermal management• Improve energy density and system efficiency• Improve reliability• Reduce overall system mass• Reduce development and launch costs


Status/Schedule

O N D J F M A M J J A SAcquire COTS & mission-related devicesScreen devices at extreme temperaturesDown-select promising devicesPerform thorough characterizationPerform thermal cycling on selected partsAnalyze & document resultsPublish tech reports & disseminate info. ♦ ♦ ♦ ♦Propose 2011 follow-on task ♦

2009 2010


FY10 Highlights/Accomplishments• Submitted deliverable test report “Evaluation of a

High Temperature SOI Half-Bridge MOSFET Driver, Type CHT-HYPERION”

• Submitted deliverable test report “Use of a Frequency Divider to Evaluate an SOI NAND Gate Device, Type CHT-7400, for Wide Temperature Applications”

• Submitted deliverable test report “Evaluation of a Programmable Voltage-Controlled MEMS Oscillator, Type SiT3701, over a Wide Temperature Range”


Target Temperature (°C)

Venus +480Lunar Surface -230 → +120

Mars Surface -125 → +20

Jupiter -160 → +300

Europa (Jupiter) -160 → -120

Titan (Saturn) -180 → -150

NASA Applications


Silicon Germanium (SiGe)Utilize band-gap engineering to tailor properties such as preventing carrier freeze-out

e.g. Diodes, HBT’s, Op Amps, VCO’s

Silicon-on-Insulator (SOI)Offer reduced leakage current, high temperature capability, improved radiation tolerance, & less power consumption

e.g. Timers, Op Amps, Logic, MOSFET’s, Drivers, VREF

Advanced Mixed SignalEmploy new material & design technologies to enhance performance and improve reliability

e.g. MEMS Oscillators, VCO’s, Converters, VREG


Forward V-I characteristics of a SiGe diode, type SG 21-41

0 0.4 0.8 1.2Forward Voltage (V)

0

1

2

3

4

Forw

ard

Cur

rent

(A)

20 °C-50 °C

-100 °C-150 °C

-195 °C

+85 °C

SiGe diode operated successfully to -195 °C with increase in forward voltage drop.


0 0.4 0.8 1.2 1.6Forward Voltage (V)

0

1

2

3

4

Forw

ard

Cur

rent

(A)

20 °C

-195 °C+85 °C

0 0.4 0.8 1.2 1.6Forward Voltage (V)

0

1

2

3

4

Forw

ard

Cur

rent

(A)

20 °C

-195 °C

+85 °C

Pre-cycling Post-cycling

SiGe power diode, type SGD-P51 (12 cycles; -195 °C to +85 °C)

Thermal cycling had little effect on operation of SiGe diode.


IC versus VCE of a SiGe HBT, type L2-32, at +20 °C

0 4 8 12VCE (V)

0

0.2

0.4

0.6

0.8

I C (A

) Ib= 10 mA

8

6

4

2

Room temperature baseline info on a SiGe HBT.


IC versus VCE of a SiGe HBT, type L2-32, at -195 °C

0 4 8 12VCE (V)

0

0.2

0.4

0.6

0.8

I C (A

)

Ib= 10 mA

8

6

4

2

Increased current gain at -195 °C for same SiGe HBT device.


IC versus VCE of a SiGe HBT, type L2-32, at +85 °C

0 4 8 12VCE (V)

0

0.2

0.4

0.6

0.8

I C (A

)

Ib= 10 mA

8

6

4

2

Slightly increased current gain at +85 °C compared to room temp gain.


Current gain of a SiGe HBT, type GPD 16-25, power transistor

-200 -160 -120 -80 -40 0 40 80 120Temperature (°C)

0

20

40

60

80

100

120

140

160

180

200

220

240

260

280

300

DC

Cur

rent

Gai

n (I C

/ IB)

SiGe HBTHBT-16-25 Pre Cycling

VCE = 8 VIB = 50 mA

Very large increase in DC current gain at low temperatures for SiGe HBT power transistor.


Output frequency of a SiGe VCO, type MAX2622

0 1 2 3 4Tune Voltage (V)

750

800

850

900

950

1000

Freq

uenc

y (M

Hz)

-50 °C

T = -195 °C-150 °C-100 °C

+20 °C

+85 °C

SiGe voltage controlled oscillator operating over wide temperature range.


Class V rad-tolerant THS4304-SP silicon germanium amplifier

Frequency (Hz)Frequency (Hz)108 109

Gai

n (d

B)

Gai

n (d

B)

-10-8-6

-4

-2024

68

1012

14

161820

Legend-195 °C-175 °C-150 °C25 °C150 °C175 °C200 °C

Wide temperature range operation of Class V Rad-Tolerant SiGe amplifier.


SOI operational amplifier , type HTOP-01

Frequency (kHz)1 10 100 1000 10000

Gai

n (d

B)

-30

-20

-10

0

10

Pre Cycling Data+200 ºC+100 ºC+22 ºC-100 ºC-190 ºC

Cryogenic operation of a 200 °C rated silicon-on-insulator op amp.


Gain of an SOI CHT-OPA operational amplifier

1 10 100 1000 10000Frequency (kHz)

-30

-20

-10

0

10

Gai

n (d

B)

= +200 °C. +100 °C, +25 °C& -100 °C/ -190 °C

1 10 100 1000 10000Frequency (kHz)

-30

-20

-10

0

10

Gai

n (d

B)

= +200 °C, +25 °C/ -190 °C

After thermal cycling.Before thermal cycling.

Thermal cycling had little effect on operation of SOI operational amplifier.


1 10 100 1000 10000Frequency (kHz)

-16

-12

-8

-4

0

4

Gai

n (d

B)

, +200°C( +25°CA -195°C

1 10 100 1000 10000Frequency (kHz)

-200

-100

0

100

Phas

e (d

egre

es)

, +200°C( +25°CA -195°C

Characteristics of an SOI HT-1104 operational amplifier after thermal cycling

Gain & Phase of an SOI HT-1104 Operational AmplifierData taken Post Thermal Cycling between -195 ºC & +200 ºC


Gain of a SiGe/SOI , type OPA-211,operational amplifier

1 10 100 1000 10000Frequency (kHz)

-16

-12

-8

-4

0

4

Gai

n (d

B) ! +140 °C

( +25 °C< -175 °C

Broad frequency range gain stability of a unique SiGe/SOI op amp over a wide temperature range.


Silicon-on-Insulator CHT-555 timer

Trigger (1), output (2), and threshold (3) signals of a high temperatureSOI CHT-555 timer at room temperature and at -195 °C.

20 °C -195 °C


Divide-by-2 circuit using SOI quad NAND devices

-192 °C +225 °C

Successful operation of SOI digital circuit over a very wide temperature range.


SOI CMOS voltage reference, type CHT-BG-050

-200 -150 -100 -50 0 50 100 150 200Temperature (°C)

4.9

5

5.1

5.2

5.3

Out

put V

olta

ge (V

)

. VIN= 9 Volts# VIN= 12 Volts+ VIN= 15 Volts! VIN= 18 Volts

0 1 2 3 4Output Current (mA)

4.9

5

5.1

5.2

5.3

Out

put V

olta

ge (V

)

, +20 °C* +100 °C

" -100 °C

/ -195 °C

Excellent stability of SOI CMOS voltage reference from -100 °C to +100 °C.


SOI full-bridge driver, type CHT-FBDR

+225°C

+25°C -190°C

No effect of temperature on operation of an SOI full-bridge driver.


Temperature ( °C)-200 -100 0 100 200

RD

S (o

n), D

rain

-Sou

rce

Res

ista

nce

(Ohm

)

0.0

0.5

1.0

1.5

2.0

Temperature ( °C)-200 -100 0 100 200

VG

S(th

), G

ate

Thre

shol

d V

olta

ge (V

)

0

1

2

3

4

5

Characteristics of an N-channel SOI MOSFET, type NMOS80

RDS held steady between -195 °C and -20 °C but increased with further increasein temperature. VGTH exhibited linear decrease with increase in temperature.


All-silicon oscillator, type ASFLM-1

-80 -40 0 40 80 120 160Temperature (°C)

92

96

100

104

108

90

94

98

102

106

110

Freq

uenc

y (k

Hz)

-80 -40 0 40 80 120 160Temperature (°C)

48

49

50

51

52

48.5

49.5

50.5

51.5

Dut

y C

ycle

(%)

Good frequency stability from +120 °C to -25 °C.


Temperature (°C)-150 -100 -50 0 50 100 150

Freq

uenc

y (M

Hz)

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

Temperature (°C)-150 -100 -50 0 50 100 150

Dut

y C

ycle

(%)

0

20

40

60

80

100

MEMS silicon oscillator, type EMK21

Excellent frequency stability from +110 °C to -110 °C.


Floating-gate voltage reference, type X60008B

-200 -150 -100 -50 0 50Temperature (°C)

2.492

2.494

2.496

2.498

2.5

2.502

2.504

Out

put V

olta

ge (V

)

, VIN = 4.5 Volts* VIN = 5.0 Volts/ VIN = 6.0 Volts" VIN = 6.5 Volts

0 2 4 6 8 10Output Current (mA)

2.48

2.485

2.49

2.495

2.5

2.505

Out

put V

olta

ge (V

)

, Temp = 20 °C* Temp = -100 °C/ Temp = -195 °C

Excellent voltage stability from +25 °C to -195 °C.


MEMS voltage-controlled oscillator, type SiT3701

Temperature (°C)-200 -150 -100 -50 0 50 100

Freq

uenc

y (k

Hz)

79960

80000

80040

80080

80120

80160Vin =

0.75 V

1.25 V

1.75 V

0 V

1.5 V

0.5 V

1.0 V

0.25 V

Input Voltage, Vin (V)0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75

Freq

uenc

y (k

Hz)

79995

79996

79997

79998

79999

80000

80001

80002

80003

Temperature

-100 °C+85 °C+22 °C0 °C-50 °C

This oscillator showed excellent frequency stability between +85 °C and -100 °C.


Passives: wire-wound resistor (93J10K) & NP0 capacitor (SM041A164K)

TemperatureTemperature-200 -150 -100 -50 0 50 100 150 200

Res

ista

nce

(kΩ

)R

esis

tanc

e (kΩ

)

0

5

10

15

20

TemperatureTemperature-200 -150 -100 -50 0 50 100 150 200

Cap

acita

nce

(uF)

Cap

acita

nce

(uF)

0.00

0.05

0.10

0.15

0.20

Dis

sipa

tion

Fact

orD

issi

patio

n Fa

ctor

0.000

0.002

0.004

0.006

0.008

0.010

Capacitance

Dissipation Factor

These are special passive devices that have good stability over a wide temperature range.


New high temperature (150 ºC) operational amplifier, type LM2904WH

Frequency (kHz)1 10 100 1000 10000

Gai

n (

dB

)

-30

-25

-20

-15

-10

-5

0

5

Legend

+ 190 ºC+ 150 ºC+ 22 ºC- 100 ºC- 150 ºC

This is a new silicon operational amplifier for high temperature use. Rated at +150 °C, it also operated down to -150 °C.


3.3V, 10W rad-hard DC/DC converter

-200 -180 -160 -140 -120 -100 -80 -60 -40 -20 0 20 40

Temperature (°C)

0.8

0.9

1.0

1.1

Nor

mal

ized

Out

put V

olta

ge

-200 -180 -160 -140 -120 -100 -80 -60 -40 -20 0 20 40

Temperature (°C)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

Nor

mal

ized

Effi

cien

cy

IOUT

0.5A

1.0A

1.5A2.0A2.5A

This rad-hard DC/DC converter operated well down to -140 °C.


Test facilities at NASA Glenn Research Center

There is a 240 liter liquid nitrogen dewar on the right, and there are two environmental chambers in the background.



This equipment was used to evaluate semiconductor devices at extremely low temperatures and at radio frequencies.



This chamber was used to evaluate a radio frequency amplifier for low temperature operation in a new space shuttle landing system.


Plans for FY11

Identify and acquire SiGe, SOI, and advanced mixed signal electronic parts with potential for use in extreme temperature space missions. (Q1-Q2 FY11)

Setup test facilities, determine part operational requirements, and establish test matrix. (Q1-Q2 FY11)

Perform testing on acquired SiGe, SOI, advanced mixed signal parts, and flight-like hardware over an extended temperature range. (Q1-Q4 FY11)

Determine performance of promising parts under wide temperature thermal cycling. (Q3-Q4 FY11)

Document data and disseminate information to the NASA designers and mission planners. (Q4 FY11)

Publish results on NASA NEPP Website, in technical journals, and at engineering conferences. (Q4 FY11)

evaluation of cots sige, soi, & mixed signal electronic ... electronic parts for extreme...

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