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ExCITe T406 – WP 1 - EUV Resist Technology Quarterly Meeting Athens, 11/12. 5. 2005 Excite T406 Acid Diffusion in CARs – Exposure latitude – Impact on Line Edge Roughness David Van Steenwinckel, Jeroen Lammers, Hans Kwinten (Philips Research Leuven) Peter Leunissen (IMEC)

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Excite T406. Acid Diffusion in CARs Exposure latitude Impact on Line Edge Roughness David Van Steenwinckel, Jeroen Lammers, Hans Kwinten (Philips Research Leuven) Peter Leunissen (IMEC). Introduction. Impact of acid diffusion on chemical contrast. 200nm pitch. 100nm pitch. - PowerPoint PPT Presentation

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Page 1: Excite T406

ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting

Athens, 11/12. 5. 2005

Excite T406

Acid Diffusion in CARs

–Exposure latitude

– Impact on Line Edge Roughness

David Van Steenwinckel, Jeroen Lammers, Hans Kwinten (Philips Research Leuven)

Peter Leunissen (IMEC)

Page 2: Excite T406

ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting

Athens, 11/12. 5. 2005

Introduction

100nm pitch

Rela

tive #

dep

rote

cted

S

ites

(a.u

.)

0

1

2

3

4

5

6

-100 -50 0 50 100

Ld = 0nm

Ld = 30nm

Ld = 60nm

200nm pitch

Position (nm) Position (nm)

Impact of acid diffusion on chemical contrast

Page 3: Excite T406

ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting

Athens, 11/12. 5. 2005

• Diffusion has major impact on max. EL

12

14

16

18

20

22

30 40 50 60 70 80 90 100

Ld (nm)

EL

(%

)

• Scaling with pitch• Ld = 68nm on 320nm pitch

translates to 0.21 Ld /pitch

Experiment:320nm pitch

NA=0.75Dipole =

0.89/0.6NILS = 2.3

Relation EL - Ld

Page 4: Excite T406

ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting

Athens, 11/12. 5. 2005

12

14

16

18

20

22

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7

Ld/pitch

EL

(%

)

• EL scaling with NILS

Relation EL - Ld

• Scaling with pitch• Ld = 68nm on 320nm pitch

translates to 0.21 Ld /pitch

Experiment:320nm pitch

NA=0.75Dipole =

0.89/0.6NILS = 2.3

• Diffusion has major impact on max. EL

Page 5: Excite T406

ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting

Athens, 11/12. 5. 2005

0

3

6

9

12

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7

Ld/pitch

EL

(%)

/ N

ILS

160nm HP

0

3

6

9

12

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7

160nm HP

120nm HP

80nm HP

Theory

Relation EL - Ld

Page 6: Excite T406

ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting

Athens, 11/12. 5. 2005

0

3

6

9

12

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7

Ld/pitch

EL

(%)

/ N

ILS

120nm HP

160nm HP

0

3

6

9

12

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7

160nm HP

120nm HP

80nm HP

Theory

Relation EL - Ld

Page 7: Excite T406

ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting

Athens, 11/12. 5. 2005

0

3

6

9

12

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7

Ld/pitch

EL

(%)

/ N

ILS

80nm HP

120nm HP

160nm HP

0

3

6

9

12

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7

160nm HP

120nm HP

80nm HP

Theory

Relation EL - Ld

Page 8: Excite T406

ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting

Athens, 11/12. 5. 2005

0

3

6

9

12

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7

Ld/pitch

EL

(%)

/ N

ILS ArF - 160nm HP

ArF - 120nm HP

ArF - 80nm HP

EUV - 50nm HP

Theory

Relation EL - Ld

EL / NILS 0.12

Page 9: Excite T406

ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting

Athens, 11/12. 5. 2005

5

6

7

8

9

10

20 30 40 50 60 70 80 90 100

Ld (nm)

LE

R 3

(

nm

)

Factors affecting LER

Contrast

Shot Noise100nm 1:1 lines

Page 10: Excite T406

ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting

Athens, 11/12. 5. 2005

5

6

7

8

9

10

20 30 40 50 60 70 80 90 100

Ld (nm)

LE

R 3

(

nm

)

Shot noise scaling:Poisson statistics

NNLER N 1~

100nm 1:1 lines

Shot Noise

N = number of acid molecules influencing deprotection statistics

Factors affecting LER

Page 11: Excite T406

ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting

Athens, 11/12. 5. 2005

5

6

7

8

9

10

20 30 40 50 60 70 80 90 100

Ld (nm)

LE

R 3

(

nm

)N = number of acid molecules influencing deprotection statistics

100nm 1:1 lines

Shot noise scaling:Poisson statistics

NNLER N 1~ N

Photon densityExposure Dose

Volume affected by acid molecules

Shot Noise

Factors affecting LER

Page 12: Excite T406

ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting

Athens, 11/12. 5. 2005

NNLER N 1~ 5

6

7

8

9

10

11

20 30 40 50 60 70 80 90 100

Ld (nm)

LE

Rco

rr_

do

se 3

(

nm

)

5

6

7

8

9

10

11

20 30 40 50 60 70 80 90 100

Ld (nm)

LE

Rco

rr_

do

se 3

(

nm

)

100nm 1:1 lines

N

Photon densityExposure Dose

Volume affected by acid molecules

Relation LER – Ld

Scaling LER - Ld

p

LMTFLLER ddiff

ddosecorr

2/3

_1

(Ld)3

Shot noise scaling:Poisson statistics

Shot Noise

Page 13: Excite T406

ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting

Athens, 11/12. 5. 2005

5

6

7

8

9

10

11

20 30 40 50 60 70 80 90 100

Ld (nm)

LE

Rco

rr_

do

se 3

(

nm

)

100nm 1:1 lines

Optical

Chemical

Relation LER – Ld

Contrast

Shot Noise

Page 14: Excite T406

ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting

Athens, 11/12. 5. 2005

5

6

7

8

9

10

11

20 30 40 50 60 70 80 90 100

Ld (nm)

LE

Rco

rr_

do

se 3

(

nm

)

Scaling LER - Ld

p

LMTFLLER ddiff

ddosecorr

2/3

_1

p

LMTFLLER ddiff

ddosecorr

2/3

_1

5

6

7

8

9

10

11

20 30 40 50 60 70 80 90 100

Ld (nm)

LE

Rco

rr_

do

se 3

(

nm

)

100nm 1:1 lines

Best LER

Relation LER – Ld

Contrast

Shot Noise

Page 15: Excite T406

ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting

Athens, 11/12. 5. 2005

Conclusions

Acid Diffusion Length LEREL

Page 16: Excite T406

ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting

Athens, 11/12. 5. 2005

Conclusions

Acid diffusion is an important resist process parameter to tune crucial lithographic process characteristics

– EL was altered by factor of 4

– LER changed by 40%

Scaling of EL and LER with diffusion length was successfully described by two validated formulas

For a given dose, EL and LER cannot be optimized simultaneously

– e.g. Optimum diffusion length for LER reduction is one third of the pitch,

EL then drops to 40% of best achievable

Page 17: Excite T406

ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting

Athens, 11/12. 5. 2005

Acknowledgments

P. Dirksen (Philips Research Leuven)

M. Ercken and N. Vandenbroeck (IMEC)

This work is sponsored through the Excite MEDEA+ T406 project, and the More Moore IST-1-507754-IP project.

Page 18: Excite T406
Page 19: Excite T406

ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting

Athens, 11/12. 5. 2005

0

3

6

9

12

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7

Ld/pitch

EL

(%)

/ N

ILS

80nm HP

120nm HP

160nm HP

Theory

EL / NILS = MTFdiffMTFdiff

Relation LER – Ld

Page 20: Excite T406

ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting

Athens, 11/12. 5. 2005

Introduction

Resolution

Dose

Line Edge RoughnessAcid Diffusion Length

Shot Noise StatisticsNumber of PixelsR. Brainard et al. Proc. SPIE, 5374, 74 (2004)

Page 21: Excite T406

ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting

Athens, 11/12. 5. 2005

Introduction

ResolutionChemical Contrast Exposure Latitude

Dose

Line Edge RoughnessAcid Diffusion Length

Shot Noise StatisticsNumber of PixelsR. Brainard et al. Proc. SPIE, 5374, 74 (2004)

Page 22: Excite T406

ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting

Athens, 11/12. 5. 2005

Introduction

Resolution Chemical ContrastExposure Latitude

Dose

Line Edge RoughnessAcid Diffusion Length

Shot Noise StatisticsNumber of PixelsR. Brainard et al. Proc. SPIE, 5374, 74 (2004)

Page 23: Excite T406

ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting

Athens, 11/12. 5. 2005

Introduction

Acid Diffusion Length LEREL

Page 24: Excite T406

ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting

Athens, 11/12. 5. 2005

Experimental Setup

• ArF resist: GAR8105G1 (FFEM)• Experimental matrix

• Acid diffusion lengths characterized using ENZ Theory• P. Dirksen et al., Proc SPIE, 5377, p150 (2004)• D. Van Steenwinckel et al., Proc. SPIE, 5753, paper 32 (2005)

115°C110°C 120°C

110°C

115°C

120°C

SBPEB

x x x

x x x

x x x

Page 25: Excite T406

ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting

Athens, 11/12. 5. 2005

0

20

40

60

80

PEB 110C PEB 115C(std.)

PEB 120C

SB110C

SB115C

SB120C

Acid Diffusion Length (Ld)

Ld as characterized with ENZ

methodology

Observations:

– Large increase in Ld with PEB

temperature

– Small decrease in Ld with SB

temperatureAci

d D

iffusi

on L

eng

th (

nm

)

Page 26: Excite T406

ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting

Athens, 11/12. 5. 2005

Outline

Acid Diffusion Length LEREL

Page 27: Excite T406

ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting

Athens, 11/12. 5. 2005

Outline

Acid Diffusion Length LEREL