extending electron and ion beam lithography schemes to
TRANSCRIPT
Copyright 2008 by Raith GmbH
“Extending electron and ion beam lithography schemes to innovative
nanofabrication processes”
Frank Nouvertné
Raith GmbH, Hauert 18, 44227 Dortmund, Germany
TNT 2008 Oviedo
Taken from Raith best picture award image gallery
Copyright 2008 by Raith GmbH
1 Introduction / Motivation
2 Innovative Nanofabrication schemes- Combined Lithography, Electron Beam Induced Deposition
(EBID) and Nanomanipulation (NMT)
- “Large area” stitching error free applications
- 3D patterning
Outline
Taken from Raith best picture award image gallery
TNT 2008 Oviedo
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Raith company profile
DortmundDortmund
Headquarters Dortmund, Germany
# of employees at Raith Dortmund: 80
# of employees at Raith USA Inc. New York: 10
# of employees at Raith Asia Ltd. Hongkong: 3
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Raith customers and products
RESEARCHUniversities & Institutes
PROTOTYPINGNanocentres
E-beam lithography
Ion-beam lithography
Nanofabrication & Nanoengineering
E-beam lithography
Automation
Efficiency
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Nanofabrication – Why this session ?
„„NanofabricationNanofabrication isis thethe designdesign and and manufacturemanufacture ofof
devicesdevices withwith dimensionsdimensions measuredmeasured in in nanometersnanometers“ …“ …
(http://whatis.techtarget.com/definition/0,,sid9_gci518307,00.html#)
Buzz words: Bottom up/downlight interference/optical/e-beam-lithographynano (contact) imprintself assembly …
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# of # of toolstoolsrequiredrequired ??
Nano-structured catalysts
Magneto-resistive devices
Nano-Electronics
MaterialsScience
Carbon nanotubes
Nano-mechanical devices
Molecular electronics
Nano-Magnetism
Nano-composites
Lithography
Nano-Biotechnology
Biochip
Quantum dots
Quantum Physics
Micro-nano implants
Bio-sensors
NEMS
Nano-Photonics
Chemistry
SET
Nanowires
Photonic crystals
EBIDIBIDchem.
Analysis
Imaging
Mechan. probe
Electrical probe
Metrology Navigation
Motivation – Nanofabrication Disciplines
AFM
Profilometry
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Motivation – Nanofabrication Application Trends
< Nowadays nanotechnology/nanofabrication challenges imply …
4 high degree of nanoscale integration
4 efficient and reliable nanofabrication of 0D- to 3D-nanostructures
4 interfacing the nano- to the macroscopic world
< Recent and future trends complementing „classical lateral structuring“
4 transition 2D – 3D (e.g. NEMS, Nanofluidics, NIL …)
4 structuring of non-planar surfaces (e.g. Nanooptics)
4 in situ relocation, assembly, modification and characterisation(e.g. CNT, graphene, composites, Nanowires/-whisker)
4 Multiple-project tasks on a single sample
< => increasing need for innovative nanofabrication schemes and multi-purpose tools with highly integrated subsystems
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Some „Universal Tool“ Vendors
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43
2
1
4
A Look inside – System Integration
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Motivation – „The“ Universal Tool …
… does not exist !
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EBID = Electron Beam Induced Deposition
EBIE = Electron Beam Induced Etching
What is EBID ?
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„Wiring“ of CNTs on SiO2-sample (by metalorganic precursor deposition) S. Bauerdick, Raith inhouse
Contact pad for„Nano-Manipulator“
Innovative Nanofabrication Schemes - Contacting CNTs
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Innovative Nanofabrication Schemes - Contacting CNTs
< Interfacing CNTs to macroscopic world using
4relocation (precise stage smart navigation)
4state-of-the-art imaging for identification
4Electron beam induced deposition process (EBID) for contacting CNTs to prestructured large pads
4Nanomanipulators alternatively as probing tips fortransport/conductivity measurements
S. Bauerdick et al., J. Vac. Sci. Technol. B, Vol. 24, No. 6, Nov/Dec 2006
CNT
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Innovative Nanofabrication Schemes - 3D EBID
45°
600 nm
45°
3-D nano chess
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3D-EBID
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EBID and manipulation of small nanostructuresA. Linden, Raith inhouse
3D-EBID and nanomanipulation thereof
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3D – EBID and precise nano manipulation
Precise manipulation of EBID nanostructuresA. Linden, Raith inhouse
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Innovative Nanofabrication Schemes
< Exposure mode using electron and/or ion beams for:
4 “Large area” nanofabrication (>> ~ 100µm) with
4 Elongated and seamless, stitching error freestructures with a length of mm to several cm
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Stitching vs. FBMS mode for nanofabrication
Length: >10 mmStitching error: 8 nm!
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FBMS: optical waveguides
minimum waveguide losses due to stitching-free FBMS writing!
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FBMS: zone plates
195 different FBMS path widths in a single exposure
D=60 µm
width635 nm
end
start
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Milling of 1-mm long &
30-nm wide line
FBMS: Milling long lines
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MOKE microscope of structured Pt/Co/Pt films
J. F
erre
et.
al.,
e.g
. J.
Appl. P
hys
. 2004
s
Pt/Co(0.6nm)/PtSpacing between lines: 900 nm
Tayloring magnetic domain walls
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3D-Nanofabrication
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3-Dimensional Nanofabrication
< precise 3D-features required for e.g. :
4 optical / diffractive elements
4 Nanoimprint master fabrication
4 Phase holograms
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substrate (e.g. silicon)
resist (e.g. PMMA 50k)
100%
0%
Dose
Thic
knes
s
3D–Lithography – how does it work ?
< Results significantly depend on:
4Specific resist properties
4Proximity effect control
4and more … (e.g. resist development, further processing …)
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T. Dillon, University Delaware, USA
3dim Lithography !
3D-Lithography – Fresnel lens
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1: Grey scale phase hologram exposed in resist2: Reconstructed image of keyboard hologramPIDC, Taiwan
1
2
3D-Lithography – Phase Holograms
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3D-Lithography 1: TIFF-Image 2: AFM-image of 3D-pattern, developped in PMMA3: 3D-view of AFM-image in 2 to visualize height profileH. Raith, Raith inhouse
128 µm
31 2
3D-Lithography – BMP import
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3D lithography – topographical data
New Zealand, 3D pattern innegative resist (OM and AFM image)M. Konijn, University of Canterbury, Christchurch, New Zealand
Christchurch
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3D Mold Fabrication scheme
1. spin coating of EBL Resist and conductive layer
2. EBL with varying exposure doses
3. development of the resist pattern 4. pattern transfer
into the SiO2 substrate
cond. layercond. layer
EBL ResistEBL Resist
SiO2SiO2
(taken into account right from the beginning in initial lithography step)
All following experiments performed in collaboration with RWTH Aachen, AMO
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Imprint of optical elements
3D Replication of Fresnel Lens (optical micrograph)
< lens diameter 80 µm
< saw tooth profile
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Template manufacturing for Imprint
3D Replication of vias & wires (optical micrograph of test structures)
260 nm
200 nm
140 nm
140 nm
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Imprinting of images
3D Replication of image files (optical micrographs)
di=140 nm
di=360 nm di=270 nm
di=320 nm
diin
itia
l im
resi
st t
hic
knes
s
Color caused by interference and different resist thickness !
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Thank you for your attention !
QUESTIONS, PLEASE !!!
… or prefer a cupof tea / coffee ?
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Thank you !
Questions ?
If you are nottoo tired yet, try to find the imperfection !
P. Paulitschke, LMU Munich, Germany