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Vadim Banine

Requirements and prospects of next generation Extreme Ultraviolet Sources for Lithography

Applications

Vadim Banine, Harm-Jan Voorma et al

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ASML EUV team presentations at this conferenceOther presentations:

Meiling et al. Progress in the realisation of EUV lithographyGroeneveld et al. Full field imaging by the ASML EUV alpha demo toolM. van den Brink: keynote speechKürz et al. (Zeiss) Optics for EUV lithographyCorthout et al. (Philips Extreme UV): the Philips Extreme UV source: recent progress in power, lifetime, and collector lifetime

PostersMaarten van Herpen Sn cleaning of multi-layer mirrors with hydrogen radicalsA.E. Yakshin et al. Interface engineering of Mo/Si multilayers for enhanced reflectance in EUVL applications

Other (Workshops, TWG meetings,…)TNO/Bas W.: optics lifetime workshop

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Contents

Power at intermediate focusPower production (Discharge or Laser Produced Plasma)Power collectionSpectral purity

Endurance of subsystemsConclusions

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Power at intermediate focusdependence

Power of the sourceOptical efficiency of the system:

Collection efficiency of the collectorSpectral purity filter transparencyDebris mitigation transparency (not covered here)

SOURCE CHARACTERISTIC REQUIREMENTWavelength 13.5 [nm] EUV Power (in-band) in IF 180 [W] (for 100 wph

in tool etendue)

Collector

FilterSource

Debris mitigation

Aperture (IF)

Vacuum chamber

See Presentation of M. van den Brink

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Power at intermediate focusdependence

Power of the sourceOptical efficiency of the system:

Collection efficiency of the collectorSpectral purity filter transparency

SOURCE CHARACTERISTIC REQUIREMENTWavelength 13.5 [nm] EUV Power (in-band) in IF 180 [W]

Collector

FilterSource

Debris mitigation

Aperture (IF)

Vacuum chamber

/ Slide 6Philips Extreme UV

+

laser

tin supply

cooling channel

Philips‘ EUV Lamp: Sn-based rotating electrodes

- 200W/2π continuous operation (scalable to >600W /2π)- very small pinch (<1mm)- >>1 bln shots electrode life- commercial product

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Laser triggered multiplexed Sn source evolution

Trigger laserRotating electrodes with

Sn - surface

EUV

Achieved:• 2 % CE• 18 kW (Continuous)360 W in 2π in-band (about 18-36 W IF)

2000-20052006

Laser triggered multiplexed pseudo spark

Characteristics:• Sustains High heat load• Built-in debris mitigation• Large opening angle• No electrode erosion

Distributed heat load:Theoretically 120 kW for rotating wheels

And> 200 kW for jets

* See presentation of Koshelev at SWSIn co-operation between ISAN and ASML

CE

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Source power progress has been increasing

0.1

1

10

100

1000

2001 2003 2005 2007 2009 2011Year

Pow

er, W

@ IF

in-b

and

Planned performance

supplier 2supplier 1

supplier 3supplier 4

Need 180+ W for HVM,

100+ wph at 10 mJ/cm2

Roadmaps conform to requirements

Actual data

Sn Xe

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Power at intermediate focusdependence

Power of the sourceOptical efficiency of the system:

Collection efficiency of the collectorSpectral purity filter transparency

SOURCE CHARACTERISTIC REQUIREMENTWavelength 13.5 [nm] EUV Power (in-band) in IF 180 [W]

Collector

FilterSource

Debris mitigation

Aperture (IF)

Vacuum chamber

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Collector status

Two approaches to collector design:• Grazing incidence• Normal incidence multilayer collector

Challenges:• High collection efficiency • Heat load control

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Collector development

Sagem

• Optimized Throughput is up to 30% of 2π

Improvement of 2x-3x in collection efficiency in comparison to the current is foreseen

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Power at intermediate focusdependence

Power of the sourceOptical efficiency of the system:

Collection efficiency of the collectorSpectral purity filter transparency

SOURCE CHARACTERISTIC REQUIREMENTWavelength 13.5 [nm] EUV Power (in-band) in IF 180 [W]

Collector

FilterSource

Debris mitigation

Aperture (IF)

Vacuum chamber

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Spectral purity (DUV)•DUV is defined here as non-EUV resistsensitive radiation•Factors which influence the spectral purity specification :

• non-EUV resist sensitive radiation @at wafer (not well known and different for different resists)• non-EUV ML reflectivity (depends on wavelength, 11 mirrors!)• non-EUV source output (different per source

Joint spec: 1% DUV relative to in-band EUV

@ wafer

RDUV ∼ 0.5 NMLM = 11

Collector

FilterSourceIF

Mitigation system

<3-7% DUV @ IF

If Spectral Purity Filter will be needed for HVM we should be prepared

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Results of the mechanical filter fabrication, solution once and for all (Transmission @13.5 nm 78%)

Uniformity about 0.5%

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.20.000

0.002

0.004

0.006

0.008

0.010

0.012

0.014

0.016

0.018

0.020

0.022

0.024

Tran

smis

sion

Wavelength ( µ m)

>1000x in DUV

About 50x in IR

0.2 Wavelength, µm 2.2

Tran

smis

sion

Typical transmission in DUV and IR

6 7 8 9 10 11 12 13 14 15 16 17 18 1976,076,276,476,676,877,077,277,477,677,878,078,278,478,678,879,079,279,479,679,880,0

Tran

smiti

on c

oeffi

cien

t, %

Sample coordinate, mm

Zr/Si - filter with 23 periods Zr/Si - filter with 37 periods

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Endurance of the subsystems

Lifetime of the source componentsLifetime of optical components:

Collector lifetime and debris mitigationSpectral purity endurance

Lifetime of components (HVM) Target

Non-consumables 15000 exp. hoursConsumables 3000 exp. hours

Collector

FilterSource

Debris mitigation

Aperture (IF)

Vacuum chamber

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Endurance of the subsystems

Lifetime of components Target

Non-consumables 15000 hoursConsumables 3000 hours

Lifetime of the source componentsLifetime of optical components:

Collector lifetime and debris mitigationSpectral purity endurance

Collector

FilterSource

Debris mitigation

Aperture (IF)

Vacuum chamber

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Lifetime of the source components(DPP example)

0.01

0.1

1

10

100

1000

10000

100000

2001 2002 2003 2004 2005 2006 2007 2008 2009

Year

Elec

trode

life

time,

exp

. hou

rs

Target for production if collector is:

Consumables 3000 hr

Non-consumable 15000 hr

SnXe

Introduction of the Sn recoverable electrodes brings the source electrodes lifetime within the target values

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Endurance of the subsystems

Lifetime of the source componentsLifetime of optical components:

Collector lifetime and debris mitigationSpectral purity endurance

Lifetime of components Target

Consumable 15000 hoursNon-consumable 3000 hours

Collector

FilterSource

Debris mitigation

Aperture (IF)

Vacuum chamber

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Endurance of the collectorPrevent the reflection loss during

exposureClean if necessary between

exposures

Robustness of in-situcleaning process

Effectiveness of debris mitigation system

0 5 10 15 20 25 300

10

20

30

40

50

60

70

80

90

100

Reference sample before exposureSample after 100 MS shots exposureE

UV

inba

nd re

flect

ivity

(%)

Grazing incidence angle (°)

Black: reference sample before exposureRed: result after 100Mpulse exposure

0 5 10 15 20 25 300

10

20

30

40

50

60

70

80

90

100

EU

V in

band

refle

ctiv

ity (%

)Grazing incidence angle (°)

Blue: reference sample before deposition/cleaningRed: result after 30 Sn deposition and cleaning cycles

No productivity degradation after repeated deposit & clean

-25

-20

-15

-10

-5

0

5

0 5 10 15 20 25 30 35

Number of clean & expose cycles

Rel

. ref

lect

ion

loss

[%]

-10% productivity

No productivity degradation after exposure to 100E6 pulses

-25

-20

-15

-10

-5

0

5

0 20 40 60 80 100Exposure time [Mpulse]

Rel

. ref

lect

ion

loss

[%]

-10% productivity

Projected lifetime of 1-2 years

PHILIPS

/ Slide 23 3PMC and Half Year EC Review Meetings

Eindhoven, 12-13 Sept. 2006CONSORTIUM CONFIDENTIAL

Sn deposition and cleaning of ML mirror

Cold cleaning (<100 C) procedure has beenIntroduced also for ML mirrors.It proved to be working in the experiments performed within More Moore Program with:• ASML• IPM• Sagem• Philips Research

ML manufactured (Pre) – ML covered with Sn (After Sn) – ML cleaned (Post)

See poster of M. van Herpen

PHILIPS

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0.0001

0.001

0.01

0.1

1

10

100

1000

10000

100000

2001 2002 2003 2004 2005 2006 2007 2008 2009

Col

lect

or u

sage

[exp

os. h

rs @

10

kHz]

Sn

Xe

Collector lifetime combining a number of methods

Combination of different number

of methods

Target for production if collector is:

Consumable 3000 hr

Non-consumable 15000 hr

Combination of methods demonstrate projected lifetime of 1-2 years

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SPF transmission and endurance

A film sample emitting light at q = 5.7 W/cm2, seen with and without external illumination; t ≈ 700º C

Recent results of 25 day exposures at 0.3 W/cm2,

Inband transmission variation: (76.53 ± 0.11) % (76.0.4 ± 0.5) %

Out-of-EUV (633 nm) transmission variation: 2.54% 2.8%

PMC and Half Year EC Review MeetingsEindhoven, 12-13 Sept. 2006

CONSORTIUM CONFIDENTIAL 6

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Concluding remarks

The source power requirement remains >180 W EUV source to support 100+ wph throughput tool is needed

• Sources working with alternative materials and/or multiplexing show that power scaling (20-50 W already now) is feasible and roadmaps is conform required power level

• The work on collectors show a significant increase in the collection efficiencies (2-3x) to be possibleCombination of a number of debris mitigation methods results in the projected collector lifetime of ∼1-2 yearFull field spectral purity filter has been manufactrured and withstood endurance testing (up to1000 x DUV suppression for 22% EUV loss)

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People contributed to the presentation

ASML: J. Benschop, N. Harned, H. Meiling, H. MeijerISAN: K. Koshelev and teamTUE: K. GielessenPhilips Research: M. van Herpen, W. Soer

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Acknowledgements

Thanks for help at…ASMLPhilipsXtreme TechnologiesCymerPhystexSagemMedia Lario

…and many others with support from national governments, More Mooreand European Commission