F50Thin-Film Analyzer

Automated Thin-Film Thickness Mapping Systemmapped quickly and easily with the F50 advanced spectral

automatically to selected measurement points and provides thickness measurements as fast as two points per second. The F50 has the same precision high-lifetime stage that performs millions of measurements in our production systems.

or linear map patterns, or create your own with no limit on the number of measurement points. The entire desktop system is set up in minutes and can be used by anyone with basic computer skills.

Example Layers Examples include: SiO2 SiNX DLC Photoresist Polymer Layers Polyimide Polysilicon Amorphous Silicon

LIQUID CRYSTAL DISPLAYS • Cell Gaps• Polyimide• ITO

SEMICONDUCTOR FABRICATION • Photoresist • Oxides/Nitrides/SOI • Wafer Backgrinding/Packaging

MEMS • Photoresist• Silicon Membranes• AlN/ZnO Thin-Film Filters

OPTICAL COATINGS • Hardness Coatings

• Filters

Applications

The Filmetrics Advantage

measurement• 24 hr phone, e-mail, and online support• Intuitive analysis software standard with every system

Additional Features• Built-in online diagnostics• Standalone software included• Sophisticated history function for saving, reproducing, and plotting results

LiveStrong Optoelectronics Co., Ltd4F., No. 82, Luke 5th Rd., Luzhu Dist., Kaohsiung City,82151, Taiwan, R.O.C (Kaohsiung Science Park)TEL: +886-7-6955325 FAX: +886-7-6955326E-mail: photonics@litron.com.tw

F50Thin-Film Analyzer

Filmetrics, Inc. 10655 Roselle St., San Diego, CA 92121 Tel: (858) 573-9300 Fax: (858) 573-9400

. 07.15 Printed in the USA

F50-UV F50-UVX F50 F50-EXR F50-NIR F50-XT F50-s1310Thickness Measurement Range*: 5 nm -

40 µm5 nm - 250 µm

20 nm - 70 µm

20 nm - 250 µm

100 nm - 250 µm

0.2 μm - 450 μm

7 µm - 2 mm

Min. Thickness to Measure n and k*: 50 nm 50 nm 100 nm 100 nm 500 nm 2 μm —Wavelength Range: 190 -

1100 nm190 -

1700 nm380 -

1050 nm380 -

1700 nm950 -

1700 nm1440 -

1690 nm1280 -

1340 nmAccuracy*: The greater of 0.2% or

1 nm0.2% or

1 nm0.2% or

2 nm0.2% or

2 nm0.4% or

3 nm0.4% or

4 nm0.4% or 50 nm

Precision: 0.02 nm 1 0.1 nm 1 1 nm 1 5 nm 2

Stability: 0.05 nm 3 0.12 nm 3 1 nm 3 5 nm 4

Spot Size: Standard 1.5 mm, optional down to 20 μm 600 μm 10 µmLight Source Lamp MTBF: D2: 2000 Hrs

Halogen: 1200 HrsHalogen: 1200 Hrs >10 years

200 mm Chuck 300 mm ChuckSample Size: ≤ 200 mm diameter ≤ 300 mm diameter

Speed (Typical with Vacuum Chuck):

5 points - 5 sec.25 points - 14 sec.56 points - 29 sec.

5 points - 8 sec.25 points - 21 sec.56 points - 43 sec.

* Material dependent ¹ 1σ of 100 measurements of 500 nm SiO2-on-Si. Average of 1σ over 20 successive days.2 1σ of 100 measurements of 100 µm SiO2-on-Si. Average of 1σ over 20 successive days.3 2σ of daily average of 100 measurements of 500 nm SiO2-on-Si over 20 successive days.4 2σ of daily average of 100 measurements of 100 µm SiO2-on-Si over 20 successive days.5 Windows Vista – Windows 8(64-bit) and a DirectX 10 graphics card required to render 3D wafer maps

GeneralPower Requirements: 100 - 240 VAC, 50 - 60 Hz, 100 Watts

Dimensions: 14W x 19D x 11H (in)35.5W x 48.3D x 28H (cm)

Weight: 35 lbs. (16 kg)Computer RequirementsInterface: USB 2.0

Operating SystemPC5: Windows XP(SP2) - Windows 8(64-bit)Mac: OS X Lion/Mountain Lion running Parallels