Fabrication and application of MOS-HBTNDRcircuit using standard SiGe process

ELECTRONICS LETTERS 26th April 2007 Vol. 43 No. 9

Student：Wei -Lun Sun Advisor： Kwang-Jow Gan

Kun Shan University Department of Electronic Engineering

Abstract A novel negative differential resistance (NDR) circuit made of a metal-oxide-semiconductor field-effect-transistor (MOS) and a heterojunction bipolar transistor (HBT) is presented. By suitably modulating the width=length parameters of the MOS devices, thefabrication of this MOS-HBT-NDR circuit and its application to inverter design based on the standard 0.35 mm SiGe process was demonstrated.

Fig. 1 Configuration of MOS-HBT-NDR-based inverter circuit

Fig. 2 Simulated I-V curves by modulating Vgg and VG, respectively

Conclusion We have demonstrated the design and fabrication of the MOS-HBT-NDR circuit and inverter application based on the standard 0.35 mm SiGe BiCMOS process. This NDR circuit shows a good peak current control by means of the voltage Vgg. Being composed of a MOS and a HBT, it will be convenient to integrate with other Sibased or SiGe-based devices and circuits on the same chip. Furthermore, we still can fabricate this MOS-HBT-NDR circuit by the standard SiGe-based integrated circuit, even down to nanoscale process.

Fig. 3 Load-line analysis for inverter Fig. 4 Measured result for inverter