first proton irradiation of cms sensors
DESCRIPTION
First Proton Irradiation of CMS Sensors. W. de Boer, A. Dierlamm, A. Furgeri, E. Grigoriev, F. Hartmann, F. Hauler, L. Jungermann, Ch. Piasecki. Some facts to remember for the next slides. Data is preliminary - PowerPoint PPT PresentationTRANSCRIPT
First Proton Irradiation of CMS Sensors
W. de Boer, A. Dierlamm, A. Furgeri, E. Grigoriev, F. Hartmann,
F. Hauler, L. Jungermann, Ch. Piasecki
Some facts to remember for the next slides
• Data is preliminary• Measurements and evaluation was done in
4 days only including the weekend some plots can be arranged in a better way and the data is incomplete! (sorry!!!)
• The biasing was done with conductive rubber residuals on AC pads sometimes gives contact problems
• We used the testing of the teststructures to train personal
• After irrad.: Strip scan for ST at Vbias=900V (it was stable)
• The evaluation is not complete!
Materials
• Hamamatsu Full Sensor (W6b 4919-39)Thickness: 500 mResistivity: 4.6 kcm
• Hamamatsu teststructures (same batch no. 35-41)– Have to look up all other parameters according
to the HPK tables
• ST Full Sensor (04439218)Thickness: 500 mResistivity: 5.1 kcm
Simulated LHC conditions with respect to surface damage!
Bia s ring--> G ND
Rp o ly
DC
ACSho rt a ll DC to b ia s (G ND)
Ba c kp la ne to + Vb ia s
Rp o ly
DC
C C
AC
He re we ne e d p o te ntia l like in LHC 1M a t 1 A = 1V
Rp o lyC urre nt a fte r irra d
Vbias
Irrad. Assembly
IV and CV on both Sensors
0 50 100 150 200 250 300 350 400 450 500 550 600
0,00
0,05
0,10
0,15
0,20
0,25
0,30
0,35
0,40 0 50 100 150 200 250 300 350 400 450 500 550 600
0,1
1
10
IV and CV on FS
Hamamatsu ST
Cap
acita
nce-0
.5
Bias Voltage [V]
Hamamatsu STLe
akag
e C
urre
nt [
A]
Strip Parameters on Ham. Sensor
0 100 200 300 400 500 600
0,2
0,4
0,6
0,8
1,0
1,2
1,4
0 100 200 300 400 500 6001,0
1,5
2,0
2,5
3,0
0 100 200 300 400 500 600
460
480
500
520
540
560
580
600
0 100 200 300 400 500 6003,10
3,15
3,20
3,25
3,30
Ileak [nA] Rpoly [M]
Ccquasi [pF]
Hamamatsu Sensor 39
Cint [pF]
Interstrip capacitance of HPK sensor (1 neighbour)
100 fF
Strip Parameters on ST Sensor
0 100 200 300 400 500 600
1
10
100
1000
0 100 200 300 400 500 6001,0
1,2
1,4
1,6
1,8
2,0
2,2
2,4
0 100 200 300 400 500 600
560
580
600
620
640
660
680
700
0 100 200 300 400 500 6003,40
3,45
3,50
3,55
3,60
Ileak [nA]
Rpoly [M]
Ccquasi [pF]
ST Sensor 39218
Cint [pF]
IV and CV on Ham. TS
0 50 100 150 200 250
0
1x1019
2x1019
3x1019
4x1019
5x1019
6x10190 100 200 300 400 500
0
10
20
30
40
50Hamamatsu TS - MinisensorIV and CV before Irradiation H35
H36 H37 H38 H39 H40 H41
Cap
acita
nce-2
Bias Voltage [V]
Leak
age
Cur
rent
[nA
]
Strip Parameters on Ham. TS
0 20 40 60 80 100 120 140
0,01
0,1
1
10
0 20 40 60 80 100 120 140
1,6
1,8
2,0
2,2
2,4
0 20 40 60 80 100 120 14050
60
70
80
90
100
110
120
0 20 40 60 80 100 120 1401,4
1,5
1,6
1,7
1,8
Hamamatsu Teststructures - Minisensorbefore Irradiation
H35 H36 H37 H38 H39 H40 H41
Le
aka
ge
Cu
rre
nt [
nA
]
Bia
s R
esi
sta
nce
[M]
Co
up
ling
Ca
pa
cita
nce
[pF
]
Inte
rstr
ip C
ap
aci
tan
ce [p
F]
Comparison: Diode vs. Minisensor
0 50 100 150 200 250 300
0,0
5,0x1019
1,0x1020
1,5x1020
2,0x1020
2,5x1020
3,0x1020
CV on TS H39 - Diode and Minisensor
Diode Minisensor
Ca
pa
cita
nce
-2
Bias Voltage [V]
High fluence (2.5x10^14 neq/cm2)
• FS Ham.@ 1V (AC & bias)
• TS H39 @ 1V
• TS H38 @ 12V
• TS H37 @ 100V
• TS H35 & H36 @ 0V
• TS H40 @ 100V (only bias)
FullSensor Ham.
Teststruc. 37, 38, 39
Teststruc. 35, 36, 40
Ni foil
Proton beam
33MeV
Low fluence (1,5x10^14 neq/cm2)
• FS ST @ 1V• TS ST26 @ 1V• TS H41 @ 0V
FS ST
TS H41, ST26
Ni foil
Proton beam
Fluence estimate (preliminary)
• Leakage current on TS H39 diode at -8±1°C:I(-8°C) = 5 A
• Leakage current at 20°C (I(T)=I0*T1.5 *e-1.2eV/kT):I(20°C)= (860 ± 190)A
• Volume of diode is 72 mm3
=> I(20°C)/V = (11.9 ± 2.6)mA/cm3
=> Fluence is about (3.0±0.6)e14 neq/cm2
(=4e-17A/cm)
• Leakage current on TS H41I(-9°C) = 1.5 A
• Fluence is about (1.1±0.3)e14 neq/cm2
Hamamatsu:
ST:
Leakage Current on Ham. Diode after Irrad. with high Fluence
0 200 400 600 800 1000
0,0
1,0x10-6
2,0x10-6
3,0x10-6
4,0x10-6
5,0x10-6
6,0x10-6
7,0x10-6
0 200 400 600 800 10001E-11
1E-10
1E-9
1E-8
1E-7
1E-6
1E-5
Irradiated, annealed, -8°C Non irradiated, RT
Hamamatsu TS 39 - Diode
Le
aka
ge
Cu
rre
nt [
A]
Voltage [V]
Leakage Current on Ham. Diode after Irradiation with low Fluence
0 200 400 600 800 1000
0,0
0,5
1,0
1,5
2,0
2,5
Hamamatsu TS 41 - Diode
Before After irrad. (low fluence) and annealing
Le
aka
ge
Cu
rre
nt [A
]
Bias Voltage [V]
CV on Ham. Diode after Irradiation
0 200 400 600 800 10001,5x1020
2,0x1020
2,5x1020
3,0x1020
Hamamatsu TS 39 - Diode
Before After IrradiationC
ap
aci
tan
ce-2
Bias Voltage [V]
CV on Sensors after Irradiation
0 200 400 600 800 1000 1200
0,00
0,05
0,10
0,15
0,20
0,25
0,30
0,35
CV(1kHz) on both Sensors at -10°C
Ham. Ham. irrad. (high fluence) ST ST irrad. (low fluence)
1/C
2
Bias Voltage [V]
IV for Sensors after Irradiation
0 200 400 600 800 1000 1200
0,0
0,5
1,0
1,5
2,0IV after Irradiation
Hamamatsu -12°C (high fluence) ST -10°C (low fluence)
Le
aka
ge
Cu
rre
nt [
mA
]
Bias Voltage [V]
Coupling Capacitance on ST Sensor after Irradiation
0 100 200 300 400 500 600300
400
500
600
700
800 ST Sensor
Before After Irradiation (-10°C)
Co
up
ling
Ca
pa
cita
nce
[p
F]
Poly Resistance on ST Sensor after Irradiation
0 100 200 3001,0
1,5
2,0
2,5
3,0 ST Sensor
Before After Irradiation (-10°C)
Po
ly R
esi
sta
nce
[M]
Leakage Current ST FS after irrad.
1-4nA before irrad.
Other Paramters on ST Sensor
• Interstrip Capacitance (one neighbour):Before Irradiation 3.5 pFAfter Irradiation 3.6 pF
• Interstrip Resistance:Before Irradiation > 10G– No definite numbers after irrad
Strip Leakage Current on Ham. Sensor after Irradiation
0 50 100 150 200 2500,1
1
10
100
1000
10000 Hamamatsu FS 39
Before After irradiation
Str
ip L
ea
kag
e C
urr
en
t [n
A]
Poly Resistance on Ham. Sensor after Irradiation
60 80 100 120 140 160 180 200 220 240 260 280 3001,0
1,5
2,0
2,5
3,0 Hamamatsu Sensor 39
Before After Irradiation (-10°)
Po
ly R
esi
sta
nce
[M]
300V, -13°C 160V
Interstrip Capacitance (one neighbour) vs. Bias Voltage
after Irradiation
0 200 400 600 800 1000
3,5
4,0
4,5
5,0
5,5
6,0Hamamatsu FS - C
int on strip 335
Cin
t [p
F]
Bias Voltage [V]
Strip Leakage Current on TS after Irradiation
0 20 40 60 80 100 120 1400,01
0,10
1,00
10,00
100,00
1000,00
10000,00Strip Leakage Current on TS H39
Before After irrad. and annealing
Str
ip L
ea
kag
e C
urr
en
t [n
A]
Coupling Capacitance on TS after Irradiation
0 20 40 60 80 100 120 140
20
40
60
80
100
120
Coupling Capacitance on TS H39
Before After irrad. and annealing
Co
ulp
ling
Ca
pa
cita
nce
[pF
]
Poly Resistance on TS after Irradiation
0 20 40 60 80 100 120 1401,0
1,5
2,0
2,5
3,0 Hamamatsu TS 41 - Minisensor
Before After Irradiation (-10°C)
Po
ly R
esi
sta
nce
[M]
Interstrip Capacitance on TS after Irradiation (2 neighbours)
0 10 20 30 40 50 60
1,0
1,2
1,4
1,6
1,8
2,0
Interstrip Capacitance on TS H39
Before After irrad. and annealing
Inte
rstr
ip C
ap
aci
tan
ce [p
F]
Some bad contacts due to residuals of conductive rubber!?!?!
Interstrip Resistance on TS after Irradiation (very preliminary)
0 10 20 30 40 50 60
-0,2
0,0
0,2
0,4
0,6
0,8
1,0
1,2
1,4
Interstrip Resistance on TS H39
Before irradiation >10G
After irrad. and annealing
Inte
rstr
ip R
esi
sta
nce
[G]
Depletion Voltage and Fluence
0 50 100 150 200 250 300
0,0
2,0x1019
4,0x1019
6,0x1019
8,0x1019
1,0x10200 50 100 150 200 250 300
0,0
2,0x1019
4,0x1019
6,0x1019
8,0x1019
1,0x10200 50 100 150 200 250 300
0
1x1017
2x1017
3x1017
4x1017
5x1017
150V
No Fluence
Bias Voltage [V]
CV on Ham. TS - Minisensor
180V
Low Fluence
Ca
pa
cita
nce
-2
220V
High Fluence
Conclusion: Procedure for the production
• Evaluation on minisensor and FS only
• Irradiation with protons is feasible with small bias voltage near to final LHC condition
• We have to evaluate the irrad. sensor with higher Vbias
• The IQC in Karlsuhe is ready with some possible improvements, learned at this system test level
• Some additonal measurments and x-ray studies are ongoing and helpfull for the surface damage understanding but are not
essential for the approval of an ingot!
End of irradiation
„I-t“
Backside of HPK sensor
First GCD measurements
CMS-GCD-StructuresDiodeGateDiodeDiode
GateDiodeDiodeDiode
Measurement of the CMS square GCD structure and Rose
structure in literatureHamamatsu No.00045
1,00E-11
1,50E-11
2,00E-11
2,50E-11
3,00E-11
3,50E-11
4,00E-11
4,50E-11
5,00E-11
5,50E-11
6,00E-11
-35,00 -30,00 -25,00 -20,00 -15,00 -10,00 -5,00 0,00
Gate Voltage (V)
Bia
s C
urr
en
t (A
) 1 V
6 V
11 V
16 V
21 V
Bias Voltage
Some non-understood points.
KA
Rose
GCD after proton irradiationHamamatsu No.00045 irradiated and annealed
1,00E-11
1,00E-07
2,00E-07
3,00E-07
4,00E-07
5,00E-07
6,00E-07
7,00E-07
8,00E-07
9,00E-07
-3,50E+01 -2,50E+01 -1,50E+01 -5,00E+00 5,00E+00 1,50E+01 2,50E+01 3,50E+01 4,50E+01 5,50E+01 6,50E+01
Gate Voltage (V)
Bia
s C
urr
en
t (A
) 1 V
6 V
11 V
16 V
21 V
Bias Voltage
GCD Summary
• Proton irradiation has shown that bulk leakage current is much higher than interface currents at least at full dose and is therefore negligible. (see
also NIM A444 (2000) 605-613) What about effects of type inversion?
• However further studies at Karlsruhe are possible by using the KA X-Ray source.
Bias contacts