from ashcroft and mermin, solid state physics
TRANSCRIPT
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From Ashcroft andMermin, Solid State Physics.
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NEMS: TOWARD PHONON COUNTING: Quantum Limit of Heat Flow.
RoukesGroupCal TechTito
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Biological Nanomotor
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Gene chips, proteomics arrays.
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Silicon wafer fabrication• Taken from www.egg.or.jp/MSIL/english/index-
e.html
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Silicon wafer fabrication – slicing andpolishing
• Taken from www.egg.or.jp/MSIL/english/index-e.html
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We
ek
1W
eek
2
N-type Si wafer <100>
Pre-diffusion cleanPad oxidation
Deposit LPCVD nitride
Spin photoresist
PR
Si N3 4
SiO2
O2
SiH ClNH
2 2
3
ECE 1233 PMOS Fabrication Sequence
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Week
2W
eek
3
Expose PR with active area maskand develop
Reactive ion etch nitride layerStrip PR
Pre-diffusion cleanField oxidation
Strip nitride and pad oxideSacrificial oxidation
OH O
2
2
O2
CHFO
3
2
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Plasma EtchersTaken from http://www-bsac.EECS.Berkeley.EDU/~pister/245/
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Week
3W
eek
4
Strip sac ox
Gate oxidation
Deposit LPCVD polysilicon
Poly
PR/etch gate maskStrip PR
O2
SiH4
SFO
6
2
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LPCVD SystemsTaken from http://www-bsac.EECS.Berkeley.EDU/~pister/245/
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Week
5W
eek
6
Ion implant BF2+
Pre-diffusion cleanDrive-in/oxidation
PR/etch contact maskStrip PR
CleanSputter deposit Al/1%Si
Al/Si
P doped areas
OH O
2
2
Ar
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Week
6
PR/etch metal maskStrip PRAnneal
Source
DrainGate (contact not shown)
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IBM 7-Level Cu Metallization
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Micromachining Ink Jet Nozzles
Microtechnology group, TU Berlin
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Bulk micromachined cavities
• Anisotropic KOH etch(Upperleft)
• Isotropic plasma etch (upperright)
• Isotropic BrF3 etch withcompressive oxide still showing(lower right)
Taken from http://www-bsac.EECS.Berkeley.EDU/~pister/245/
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Surface Micromachining
Deposit sacrificial layer Pattern contacts
Deposit/pattern structural layer Etch sacrificial layer
Taken from http://www-bsac.EECS.Berkeley.EDU/~pister/245/
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source
source
source
gate
gate
gate
drain
drain
drain
NUMEM Microrelay Process
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source
source
gate
gate
drain
drain
NUMEM Microrelay Process
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Residual stress gradients
More tensile on top
More compressive on top
Just right! The bottom line: annealpoly between oxides with similarphosphorous content. ~1000C for~60 seconds is enough.
Taken from http://www-bsac.EECS.Berkeley.EDU/~pister/245/
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Residual stress gradients
A bad day at MCNC (1996).
Taken from http://www-bsac.EECS.Berkeley.EDU/~pister/245/
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1 1 µµmm
Scalloping and Footing issues of DRIE
Scalloped sidewall
Scalloped sidewall
Top wafer surfaceTop wafer surface
cathodecathode Top wafer surfaceTop wafer surface
anodeanode
Tip precursorsTip precursors
Scalloped sidewall
Scalloped sidewall
Top wafer surfaceTop wafer surface
cathodecathode Top wafer surfaceTop wafer surface
anodeanode
Tip precursorsTip precursors
<100 nm silicon nanowireover >10 micron gap
microgridFooting at the bottom of
device layerMilanovic et al, IEEE TED, Jan. 2001.
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DRIE structures
• Increased capacitancefor actuation andsensing
• Low-stress structures– single-crystal Si only
structural material
• Highly stiff in verticaldirection– isolation of motion to
wafer plane– flat, robust structures
2DoF Electrostatic actuator
Thermal Actuator
Comb-drive Actuator
Taken from http://www-bsac.EECS.Berkeley.EDU/~pister/245/
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Sub-Micron Stereo Lithography
Micro Electro Mechanical SystemsJan., 1998 Heidelberg, Germany
New Micro Stereo Lithography for Freely Movable 3D Micro Structure-Super IH Process with Submicron Resolution-
Koji Ikuta, Shoji Maruo, and Syunsuke KojimaDepartment of Micro System Engineering, school of Engineering, Nagoya University
Furocho, Chikusa-ku, Nagonya 464-01, JapanTel: +81 52 789 5024, Fax: +81 52 789 5027 E-mail: [email protected]
Fig. 1 Schematic diagram of IH Process
Fig. 5 Process to make movable gear and shaft (a) conventional micro stereo lithography needs base layer (b) new super IH process needs no base
Fig. 6 Schematicdiagram of thesuper IH process
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Sub-Micron Stereo Lithography
Micro Electro Mechanical SystemsJan., 1998 Heidelberg, Germany
New Micro Stereo Lithography for Freely Movable 3D Micro Structure-Super IH Process with Submicron Resolution-
Koji Ikuta, Shoji Maruo, and Syunsuke KojimaDepartment of Micro System Engineering, school of Engineering, Nagoya University
Furocho, Chikusa-ku, Nagonya 464-01, JapanTel: +81 52 789 5024, Fax: +81 52 789 5027 E-mail: [email protected]
Fig. 10 Micro gear and shaft make of solidified polymer(b) side view of the gear of four teeth(d) side view of the gear of eight teeth