fuji igbt modules for solar inverter...inverter transformer solar panel dc ac ~ load grid feature of...

© Fuji Electric Co., Ltd. All rights reserved. 1Aug. 2013 MT5F27333

Device Application Technology Dept.Semiconductor Sales Div.

Global Sales Group

Fuji IGBT Modules for Solar InverterFuji IGBT Modules for Solar Inverter


Topology in solar inverter

Fuji IGBT modules for solar inverter

Fuji solution in Gate Driver Unit (GDU)

Fuji 2 level topology solution

Fuji 3 level topology solution - Stack

Table of contents


Simple schematics of solar inverter

TransformerInverterSolar panel

ACDC

~

Load

Grid

■Feature of solar inverter: High efficiency, High reliability.

1200V / 200A1200V / 150ADevice （ex. 30kW）

100～120%150～200%Overload

> 95%90～95%Efficiency

50 / 60HzEx. 0.5～120HzOutput frequency

DC 400～1000VAC (Ex. 400V±10%）Input voltage

Solar inverterGeneral inverter

FilterAC


< 10kW

IGBT:600V

Single-phase inverter

> 10kW> 10kW> 10kWCapacity

Output Voltage

IGBT:1200V+600V(RB-IGBT)

IGBT:600VIGBT:1200VDevice

Circuit

A-NPC 3-levelwith RB-IGBT

NPC 3-level inverter2-level inverter Type


Tr.Tr.

Tr.







Table of contents


2 level topology (condition: Vdc rating = 450V, Vdc max = 1000V)

2MBI600VXA-120E-50

16MBI450V-120-50

16MBI300V-120-50

12MBI200VH-120-50

200A1200V30kW

42MBI1400VXB-120E-50

1400A x 4p1200V1000kW

1

2MBI600VE-120-50

600A1200V125kW2MBI600VN-120-50

2MBI450VE-120-502MBI450VN-120-502MBI450VJ-120-50

2MBI300VH-120-501

2MBI300VD-120-50

300A1200V50kW2MBI300VN-120-502MBI300VE-120-50

1

2MBI450VH-120-50

450A1200V100kW

6MBI225V-120-50 1

2MBI200VB-120-50

225A

2MBI600VJ-120-50

2MBI150VB-120-50

1200V

1200V

1200V

1200V1200VVCES

500kW

250kW

20kW

15kW10kWPCS

12MBI75VA-120-5075A12MBI100VA-120-50100A

12MBI150VA-120-50

150A

2MBI300VJ-120-50

2MBI600VG-120-50

12MBI1400VXB-120E-50

1400A2MBI1400VXB-120P-50

22MBI1400VXB-120E-50

1400A x2p

2MBI1400VXB-120P-50

2MBI1400VXB-120P-50

IGBT P/N Number of parallelIc rating


Fuji IGBT module for solar inverter - 2 level topology

Standard 1in1/2in1

PrimePACKTM

1in162mm

62mm

80mm

45mm

注：PrimePACKTM は Infineon Technology 社の登録商標です。

EconoPACKTM+

Dual XT

Note: EconoPACKTM+ and PrimePACKTM are registered trademarks of Infineon Technology AG, Germany.Size:172 x 89 x 38mm

Size:250 x 89 x 38mm

M271

M272M629

Size:150 x 162 x 17mm

M254

M260M254



A-NPC 3 level topology (condition: Vdc rating = 450V, Vdc max = 1000V)

▲：Under development

1▲4MBI900VB-120R1-50T-Slim900A

2▲4MBI900VB-120R1-50T-Slim900A x2p1200V500kW

4▲4MBI900VB-120R1-50T-Slim900A x4p1200V1000kW

1200V125kW

M403(4in1)

T-Slim

M403(4in1)

T-Slim

M403(4in1)

M403(4in1)

M403(4in1)

M403(4in1)

EP3(12in1)

EP3(12in1)

Package

1▲4MBI650VB-120R1-50650A

12MBI100VX-120-50

12MBI75VX-120-50

44MBI300VG-120R-50300A x4p1200V250kW

24MBI300VG-120R-50300A x2p

1▲4MBI650VB-120R1-50650A

24MBI300VG-120R-50300A x2p1200V100kW

14MBI300VG-120R-50300A1200V50kW

14MBI300VG-120R-50200A1200V30kW

1200V

1200V

1200V

VCES

20kW

15kW

10kW

PCS

112MBI75VN-120-50

75A

112MBI100VN-120-50

100A

14MBI300VG-120R-50150A

IGBT P/N Number of parallelIc rating

Notice)

Applicable device might be different by control method, control condition, cooling condition, etc.


T-SlimPrimePACKTM

9

Fuji IGBT module for solar inverter - 3 level topology

※Under developmentSize:172 x 89 x 38mmSize:250 x 89 x 38mm

M271

M272

M403


M1202


EP3(12in1) M403(4in1)

Note: PrimePACKTM are registered trademarks of Infineon Technology AG, Germany.

M1203


Fuji IGBT module for solar inverter - Standard 2in1

1200V

1200V

1200V

1200V

1200V

Voltage Package Equivalent circuit

200A, 300A, 450A2MBI**VH-120-50

300A, 450A, 600A2MBI**VE-120-50

150A, 200A2MBI**VB-120-50

75A, 100A, 150A2MBI**VA-120-50

300A, 400A2MBI**VD-120-50

CurrentIGBT P/N

Stan

dard

2in

1

FeatureLow power dissipation with V-silicon chipsetExtra thermal design (Tjmax = 175℃ repetitive guarantee)

M263

M274

M275

M275

M276


Fuji IGBT module for solar inverter - EconoPACKTM+, Dual XT

1200V600A2MBI600VN-120-50

1200V450A2MBI450VN-120-50

M260:150 x 62 x 17mm1200V300A2MBI300VJ-120-50

M254:150 x 62 x 17mm1200V300A2MBI300VN-120-50

1200V

1200V

1200V

1200V

1200V

Voltage

M629:150 x 162 x 17mm

Package Equivalent circuit

600A2MBI600VJ-120-50

450A2MBI450VJ-120-50

300A6MBI300V-120-50

225A6MBI225V-120-50

450A6MBI450V-120-50

CurrentIGBT P/N

Econ

oPA

CK

TM+

FeatureLow power dissipation with V-silicon chipsetExtra thermal design (Tjmax = 175℃ repetitive guarantee)2 kinds of pin connection for Dual XT (Solder/Spring)

Dua

l XT

Note: EconoPACKTM+ are registered trademarks of Infineon Technology AG, Germany.

Solder pin type

Spring type


Fuji IGBT module for solar inverter - PrimePACKTM

1200V900A2MBI900VXA-120E-50

Equivalent circuit

Al3O2

Viso=4.0kV/60sCopper

(Cu)

M272:250 x 89 x 38mm

Al3O2

Viso=4.0kV/60sCopper

(Cu)

M271:172 x 89 x 38mm1200V600A2MBI600VXA-120E-50

1200V1400A2MBI1400VXB-120P-50

IsolationBase platePackageVoltageCurrentIGBT part No.

Prim

ePA

CK

TM

FeatureLow power dissipation with V-silicon chipset

Extra thermal design (Tjmax=175℃ repetitive guarantee)

Low inductance and good current balance package

Long-term reliability ( CTI > 600, High Tc capability)



Fuji IGBT module for solar inverter - EP3(12in1)

1200V100A12MBI100VN-120-50

1200V50A12MBI50VX-120-50

M1202:122 x 62 x 17mm

1200V75A12MBI75VN-120-50

1200V75A12MBI75VX-120-50

1200V100A12MBI100VX-120-50

Equivalent circuit

M1203:122 x 62 x 17mm

1200V50A12MBI50VN-120-50

PackageVoltageCurrentIGBT part No.

EP3(

12in

1)

FeatureA new RB-IGBT and an existing IGBT are integrated in one package. (Fuji specific technology!)

The stray inductance between each main terminals < 40nH

The arrangement of the terminals is optimized for construction of A-NPC power converters.※RB-IGBT: Reverse Blocking-Insulated Gate-Bipolar Transistor

T1Gu

T2Gu

T3Ew

P

M

N

U

V

W

T1Gv T1Gw

T2Gv T2Gw

T1/T4Eu T1/T4Ev T1/T4Ew

T2Eu T2Ev T2Ew

T3Eu

T3Ev

T3Gu

T3Gv

T3Gw

T4Gu

T4Gv

T4Gw

TH1 TH2

M1202Solder pin type

M1203Press fit pin type


Fuji IGBT module for solar inverter - M403(4in1)

600V400A4MBI400VG-060-50

1200V400A4MBI400VG-120R-50

Equivalent circuit

M403:110 x 80 x 30mm

1200V300A4MBI300VG-120R-50

PackageVoltageCurrentIGBT part No.

M40

3(4i

n1)

FeatureA new RB-IGBT and an existing IGBT are integrated in one package. (Fuji specific technology!)

The stray inductance between each main terminals < 40nH

The arrangement of the terminals is optimized for construction of A-NPC power converters.

T1

T2T4

T3

P

U

N

M

T1 G

T1/T4 E

T2 G

T2 E

T3 ET3 G

CT4 G

T1

T2T4

T3

P

U

N

M

T1 G

T1/T4 E

T2 G

T2 E

T3 ET3 G

CT4 G

MM

※RB-IGBT: Reverse Blocking Insulated Gate Bipolar Transistor


T3 switching T1-FWD recovery modeTj=RT, Vcc2=400V, Ic=300A, RG=+8.2/-39ohmVGE(T3)=+/-15V, VGE(T4)=+15V, snubber=1.84uF, Ls=34nH

T1 switching T4 RB-IGBT recovery modeTj=RT, Vcc2=400V, Ic=300A, RG=+10ohmVGE(T1)=+/-15V, VGE(T4)=+15V, snubber=1.84uF, Ls=34nH

Fuji RB-IGBT can be realized of fast switching operation same as normal IGBT and FWD.

The switching waveforms of RB-IGBT

T1

T2T4

T3

P

U

N

M

T1 G

T1/T4 E

T2 G

T2 E

T3 ET3 G

CT4 G

T1

T2T4

T3

P

U

N

M

T1 G

T1/T4 E

T2 G

T2 E

T3 ET3 G

CT4 G

MM

Equivalent circuit

VGE

VCE

IC

VCE:100V/div

IC:100A/div

VGE:10V/div

time:500ns/div

Turn off

VCE

IC

VGE

time:200ns/div

VGE:10V/div

VCE:100V/div

IC:100A/div

Turn on

IC

VCEtime:200ns/div

time:500ns/div

VCE:100V/div

IC:100A/div

VCE:100V/div

IC:100A/div

Reverse recovery

Reverse recovery







Table of contents


Fuji solution in GDU for 2 level topology

2SP0320x2Ax-2MBI1400VXB-120P-502MBI1400VXB-120P-50

2SP0320x2Ax-2MBI1400VXB-120E-502MBI1400VXB-120E-501400

2SP0320x2Ax-2MBI900VXA-120P-502MBI900VXA-120P-50

2SP0320x2Ax-2MBI900VXA-120E-502MBI900VXA-120E-50900


PrimePACKTM

2SP0115T2Ax-2MBI600VN-120-502MBI600VN-120-50600




Dual XT

Plug-and-Play driver part No.IGBT part No.Ic rating (A)Package

1200VVces

2SP0320x2Ax-2MBI1400VXB-170P-502MBI1400VXB-170P-50

2SP0320x2Ax-2MBI1400VXB-170E-502MBI1400VXB-170E-501400



PrimePACKTM



2SP0115T2Ax-172MBI300VN-170-50300

Dual XT

Plug-and-Play driver part No.IGBT part No.Ic rating (A)Package

1700VVces


http://igbt-driver.com/


Fuji solution in GDU for 2 level topology

VLA539VLA539-1400

VLA539VLA539-1600

Under investigationUnder investigation-2400

-M5719L/VLA517M57159L/VLA51750

-VLA541/VLA517M57159L/VLA51775

-VLA541/VLA517VLA541/VLA517100



-VLA542/VLA517-225

VLA546**VLA542/VLA517VLA542/VLA517300

-VLA500VLA542/VLA517400

VLA500KVLA500-450

VLA500KVLA500-550

VLA500KVLA500VLA500600

VLA500K--650

VLA500KVLA500-800

-VLA500-900

VLA539--1000

VLA539VLA539-1200

Under investigationUnder investigation-3600

1700V1200V600VIc rating (A)

http://www.idc-com.co.jp/







Table of contents


Gate Drive Unit

Snubber Cap. Snubber Cap.

Main Cap.

Bus BarOutput Terminal

Cooling fin

PrimePACKTM 2 parallel

Snubber C : 2～3 uF

Top view

Side viewPrimePACK TM can easily construct inverter circuit .This figure shows the example.

Laminate bus bar to realize low leakage inductance.








Table of contents


Easy connected “3 level inverter” by 2in1 module and chopper module

2in1 Module

E2E2C1 C1

E2E2C1 C1

E2E2C1 C1

to Load

Cap.1

Cap.2Cap.2

Cap.1

Chopper Module

Chopper Module

PrimePACKTM


M403(4in) 2 parallel

P M N

A-NPC 3 level module * 2 parallel image

P

M

N

M403(4in1)

UVW

PM

NU

Cs

Cs


M403(4in1) 2 parallel

P

M

N

M403(4in1)

UVW

PM

NU

CsCs

Assemble IGBT heat-sink and condenserAssemble insulation paperAssemble P busbarAssemble insulation paperAssemble M busbarAssemble insulation paperAssemble N busbarAssemble insulation paperAssemble output(U,V,W)Assemble screw

P M N UPMNU

© Fuji Electric Co., Ltd. All rights reserved. 25Aug. 2013 MT5F27333 25

Deviation of VCE(sat) and current imbalance rate

V series 1200V IGBT/FWD and 600V RB-IGBT device for parallel standard module

Current imbalance of paralleled module

The condition of current imbalance rate within 10% for Von(1) Von of V-IGBT and RB-IGBT must be less than Δ0.27V.(2) VF of FWD must be less than Δ0.23V.

Von2Von1

I2I1

A difference in the Von of two IGBT modulesConnected in parallel can cause a current imbalance.

If the modules are the same Lot. , it should be designed with α= 10%.If the modules are not the same Lot., it should also be designed with α= 20%.

%1001)(

1

avecII 2/)( 21)( III avgc

V-IGBT and RB-IGBT

© Fuji Electric Co., Ltd. All rights reserved. 26Aug. 2013 MT5F27333 26

Connection method for auxiliary terminals

Gate driver

The emitter terminal of T1 and T4 is the same so that gate driver GD1 and GD4 can be used with the same gate driver power supply. Three gate driver power supplies are enough for M403.

T3

T4M U

P

T1

N

T2

GD1

GD2

GD4

GD3

GD3

GD2

GD1GD4

Twist wiring

Twist wiring


VCEP

Snubber capacitors

L: Main circuit wiring parasitic inductanceIo: Collector current at IGBT turn-offVCEP: Snubber capacitor peak voltageEd: DC supply voltage

2

2

EdVIoLC

CEPS

*

Vces Ic100A 0.2 μH 0.47μF300A 0.1μH 3.3μF450A 0.08 μH 4.7μF1000A 0.07μH 6.8μF1400A 0.06μH 12μF

Module ratingDC line inductance snubber capacitance

1200V/1700V

fuji igbt modules for solar inverter...inverter transformer solar panel dc ac ~ load grid feature of...

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