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TRANSCRIPT
Agenda
Sunday, October 25, 2015 16:30 – 19:00
Opening Reception and Poster Session
Monday, October 26, 2015 9:00 – 9:15
Opening Remarks
Geert Vandenberghe / Roel Gronheid, imec
9:15 – 9:50
Keynote Presentation: Memory Trends and Implications for Lithography and DSA
Linda Somerville, Micron
Session 1: DSA Integration 9:50 – 10:10
Half pitch 15 nm metal wire circuit fabricated using directed self-‐assembly of PS-‐b-‐PMMA
Yuriko Seino, EIDEC
10:10 – 10:30
Challenges for Line Width / Line Edge Roughness (LWR/LER) improvement in Directed self-‐assembly (DSA) advanced patterning
Boon Teik Chan, imec
10:30 – 10:50
Behavioral Modeling for Virtual Fabrication using Directed Self-‐Assembly at the 5 nm Node
Mattan Kamon, Coventor
10:50 – 11:20
Break
Session 2: BCP Materials 11:20 – 11:40
Directed Self-‐Assembly Materials Development for 7 nm Node and Beyond
Masafumi Hori, JSR
11:40 – 12:00 Material development for DSA hole grapho-‐epitaxy process
Tasuku Matsumiya, TOK
12:00 – 12:20
Maximize the benefits of DSA based on PS-‐PMMA block copolymer for high resolution patterning with novel BCP system
Eri Hirahara, Merck
Lunch / Poster Session / Invited Presentation 12:20 – 13:20
Lunch
12:20 – 14:20 Poster Session 14:20 – 14:50
Invited Presentation: High c Block Copolymers: A Progress Report
C. Grant Willson, Univ of Texas at Austin
Session 3: Design 14:50 – 15:10
Process/Design co-‐optimization and Layout decomposition for manufacturing sub-‐10nm FinFets using DSA
Joydeep Mitra, Mentor Graphics
15:10 – 15:30
Simulation-‐based optimization of guide pattern targets for templated DSA
Thomas Mulders, Synopsys GmbH
15:30 – 15:50
Practical considerations in DSA-‐aware design of vias using Cylinder forming DSA Grapho-‐epitaxial processes
Andres Torres, Mentor Graphics
15:50 – 16:10
Feasibility study of DSA for complementing EUV lithography at 7nm node
Chenxi Lin, ASML Brion
16:10 – 16:40
Break
Session 4: Metrology
16:40 – 17:00
Approaches to the metrology challenges for DSA hole
Masafumi Asano, Toshiba
17:00 – 17:20 Challenges in the LER/CDU metrology of DSA structures
Vassilios Constantoudis, NCSR Demokritos
17:20 – 17:40
New CD-‐SEM measurement method for qualification of local placement error and edge placement roughness of chemo-‐epitaxy lamellar DSA patterns
Takeshi Kato, Hitachi High-‐Technologies
17:40 – 18:00
Characterizing the Buried Structure of Line/Space Directed Self Assembly Patterns
Joe Kline, NIST
18.00 – 18.30
Transfer to ‘de Hoorn’ for dinner
18:30 – 22.00
Conference Dinner
Tuesday, October 27, 2015 9:00 – 9:35
Keynote Presentation: Toward 5nm node: Untoward scaling with multi-‐patterning
Hidetami Yaegashi, TEL
Session 5: High-‐c BCP Materials 9:35 – 9:55
Directed Self-‐assembly of PS-‐b-‐PMMA with Ionic Liquid Addition
Xuanxuan Chen, Univ of Chicago
9:55 – 10:15
Directed Self-‐assembly of Topcoat-‐free Polycarbonate Containing High-‐χ Block Copolymers
Ankit Vora, IBM Almaden
10:15 – 10:35
Design of Block Copolymers for Perpendicular Orientation of Lamellar Structures with sub 10 nm Features
Teruaki Hayakawa, Tokyo Institute of Technology
10:35 – 11:00
Break
Session 6: Processing 11:00 – 11:20
The effects of guide pattern roughness on directed self-‐assembly line-‐space patterns
Katsutoshi Kobayashi, Toshiba
11:20 – 11:40 Towards cost-‐effective and low defectivity DSA flows for line/space patterning
Hari Pathangi, imec
11:40 – 12:00
Contact hole shrink by directed self-‐assembly planarization: template affinity role
Ahmed Gharbi, CEA-‐Leti
12:00 – 12:20
Hierarchical Manipulation of Block Copolymer Patterns via Multiple External and Internal Fields
Larisa Tsarkova, RWTH Aachen University
Lunch / Invited Presentation 12:20 – 13:20
Lunch
13:20 – 13.50 Invited Presentation: Directed self-‐assembly (DSA) of block copolymers on lithographically-‐defined chemically nano-‐patterned surfaces
Paul F. Nealey, Univ of Chicago
Session 7: Simulation 13:50 – 14:10
Process window analysis for contact hole shrinking: A simulation study
Andreas Erdmann, Fraunhofer IISB
14:10 – 14:30
A simulation analysis on defect annihilation in directed self-‐assembly lithography
Katsuyoshi Kodera, EIDEC
14:30 – 14:50
The Effects of Surface Topography of Nanopatterned Substrates on the Directed Self Assembly of Block Copolymers
Grant Garner, Univ of Chicago
14:50 – 15:20 Break
Session 8: DSA Integration 15:20 – 15:40
Electrical verification of sub-‐20nm contact holes obtained with directed self-‐assembly of block copolymers
Paulina Rincon Delgadillo, imec
15:40 – 16:00
DSA Landscape and Cost of Ownership
Chandra Sarma, Intel Corporation
Discussion, Voting and Adjourn
16:00 – 17:20
Debate and Voting
all
17:20 – 17:30
Closing Remarks
Geert Vandenberghe, Roel Gronheid, imec
17.30 – 18.30 Closing Reception and Adjourn
Posters
P-‐01
Towards directed self-‐assembly for future CMOS scaling: A study on variability of cylindrical patterns
Carolien Boeckx, KU Leuven
P-‐02 Development of sub-‐10 nm Patterns Using Novel BCP
Jung-‐Keun Kim, LG Chem Corporate R&D
P-‐03 The synthesis of high chi block co-‐polymers and their behavior under the topcoat orientation system
Yusuke Asano, University of Texas at Austin
P-‐04 Investigation of Coat-‐Develop Track System for Placement Error of Contact Hole Shrink Process
Masahiko Harumoto, SCREEN Semiconductor Solutions Co.
P-‐05 Novel Neutral Under Layer Materials for Aligning Block-‐Co-‐Polymer in Directed Self-‐Assembly Processes
Ryuta Mizuochi, Nissan Chemical
P-‐06 Assessing the local nanomechanical properties of self-‐assembled block co-‐polymers thin films by Peak Force tapping
Matteo Lorenzoni, Instituto de Microelectrónica de Barcelona
P-‐07 Innovative block copolymers for next generation directed self-‐assembly
Yukio Kawaguchi, Kyoto University
P-‐08 PS-‐b-‐PMMA blend systems to achieve defect-‐free structures for large periods and thick-‐films
Xavier Chevalier, ARKEMA
P-‐09 Solvent assisted rapid thermal treatment in low molecular weight asymmetric and symmetric PS-‐b-‐PMMA thin films
Gabriele Seguini, Laboratorio MDM, IMM-‐CNR
P-‐10 Plasma etch resistivity of a high molecular weight microphase separated PS-‐b-‐PVP block copolymers
X. Cheng, DWI -‐ Leibniz Institute for Interactive Materials
P-‐11 Roughness smoothing of BCP patterns with sequential infiltration synthesis
Arjun Singh, KU Leuven
P-‐12 Enabling density multiplication in directed self-‐assembly of block co-‐polymers by chemical surface modification using wide guiding stripes
Laura Evangelio, Institut de Microelectrònica de Barcelona
P-‐13 Creation of chemical guiding patterns for DSA of block copolymers by high-‐resolution resistless nanolithography methods
Laura Evangelio, Institut de Microelectrònica de Barcelona
P-‐14 Morphology of Cylinder Forming PS-‐b-‐PMMA Block Copolymers Inside Periodic Trenches
Federico Ferrarese Lupi, Laboratorio MDM, IMM-‐CNR
P-‐15 Reducing the Interfacial Width of Block Copolymers through Additives
Daniel F. Sunday, NIST
P-‐16 Enabling DSA Technology for Semiconductor Applications with Novel Materials and Processes
Guanyang Lin, EMD Performance Materials
P-‐17 Development of a comprehensive metrology platform dedicated to block copolymers thin film nanopatterns
Alexandre Dervillé, POLLEN Metrology
P-‐18 Comparison of coarse-‐grained and reduced models of directed self-‐assembly of block copolymers for the application for contact shrink process
Przemysław Michalak, Fraunhofer IISB
P-‐19 Influence of Film Thickness and Pattern Density in Grapho-‐epitaxial DSA
Jan Doise, KU Leuven
P-‐20 Defects during Directed Self-‐Assembly (DSA) of Block Copolymers
Weihua Li, Georg-‐August-‐University
P-‐21 Tunable L0 BCP Performance in Directed Self-‐Assembly
Kui Xu, Brewer Science
P-‐22 Reversible supramolecular structures direct self-‐assembly of functional materials
Bortolo Matteo Mognetti, Université Libre de Bruxelles
P-‐23 Mask Synthesis for Grapho-‐Epitaxial Directed Self-‐Assembly (DSA) using Source and Mask Optimization (SMO) and Inverse Lithography (ILT) techniques
Yuansheng Ma, Mentor Graphics
P-‐24 Development of block copolymers to create complex material nanopatterns
Michael Morris, University College Cork
P-‐25 Development and Integration of Si-‐containing block copolymers with enhanced resolutions for line space applications
G. Fleury, Université Bordeaux
P-‐26 Validation of Improved Compact Model in Grapho-‐Epitaxy Directed-‐Self-‐Assembly (DSA)
Germain Fenger, Mentor Graphics
P-‐27 Scaling down the thickness of random copolymer grafted layers for block copolymer self-‐assembly
Katia Sparnacci, Università del Piemonte Orientale
P-‐28 Directed self-‐assembly of block-‐copolymer films in electric fields
Ulrich Welling, Georg-‐August Universität Göttingen