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1 Fundamentals of Microelectronics CH1 Why Microelectronics? CH2 Basic Physics of Semiconductors CH3 Diode Circuits CH4 Physics of Bipolar Transistors CH5 Bipolar Amplifiers CH6 Physics of MOS Transistors CH7 CMOS Amplifiers CH8 JFET Transistor

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Page 1: Fundamentals of Microelectronics · 2015-12-18 · Microsoft PowerPoint - F-Slide7.ppt [Compatibility Mode] Author: Dr Shamsi Created Date: 12/18/2015 11:47:20 PM

1

Fundamentals of Microelectronics

CH1 Why Microelectronics? CH2 Basic Physics of Semiconductors CH3 Diode Circuits CH4 Physics of Bipolar Transistors CH5 Bipolar Amplifiers CH6 Physics of MOS Transistors CH7 CMOS Amplifiers CH8 JFET Transistor

Page 2: Fundamentals of Microelectronics · 2015-12-18 · Microsoft PowerPoint - F-Slide7.ppt [Compatibility Mode] Author: Dr Shamsi Created Date: 12/18/2015 11:47:20 PM

2

Chapter 8 JFET Transistor

Physics of Operation

I/V Characteristic

Biasing

Small-Signal Model

JFET Amplifier

Page 3: Fundamentals of Microelectronics · 2015-12-18 · Microsoft PowerPoint - F-Slide7.ppt [Compatibility Mode] Author: Dr Shamsi Created Date: 12/18/2015 11:47:20 PM

3

JFETساختار فيزيکی Junction Field Effect Transistor

Figure: n-Channel JFET.

Page 4: Fundamentals of Microelectronics · 2015-12-18 · Microsoft PowerPoint - F-Slide7.ppt [Compatibility Mode] Author: Dr Shamsi Created Date: 12/18/2015 11:47:20 PM

Figure: The nonconductive depletion region becomes broader with increased reverse bias.(Note: The two gate regions of each FET are connected to each other.)

به ازای ولتاژ های مختلف گيت JFETعملکرد

Page 5: Fundamentals of Microelectronics · 2015-12-18 · Microsoft PowerPoint - F-Slide7.ppt [Compatibility Mode] Author: Dr Shamsi Created Date: 12/18/2015 11:47:20 PM

ادامه

الکتريکی در اين ترانزيستور عبور حامل های بار تحت تاثير پتانسيل گيت و يا به عبارت ديگر ميدان.عرضی ناشی از گيت است

اين ترانزيستور جزء دسته ترانزيستورهای تک قطبی)Unipolar ( است چراکه در آن فقط حامل.های اکثريت در برقراری جريان ايفای نقش می کنند

transversal fieldis used to control

Channel

JUNCTION FET: depletion layers of pn-junctions close the channel

Flow

depletion layer

Page 6: Fundamentals of Microelectronics · 2015-12-18 · Microsoft PowerPoint - F-Slide7.ppt [Compatibility Mode] Author: Dr Shamsi Created Date: 12/18/2015 11:47:20 PM

Figure: Circuit for drain characteristics of the n-channel JFET and its Drain characteristics.

:ناحيه اهمی يا مقاومتی يا تريود يا خطی

0,2 22 GDSDSPGS

P

DSSD IVVVV

VI

I

0,2

2 GPGS

P

DSSD IVV

VII

2

1

P

GSDSSD V

VII

کوتاه اتصال ازای به ترانزيستور اشباع ناحيه در درين جريان را DSSI و off-pinch ولتاژ را pV باال روابط در.است شده تعريف يکديگر به S و G های گره

off-pinchناحيه اشباع يا فعال يا

PGDPGS VVVV ,0

Nنوع JFETولتاژ -مشخصه جريان

PGDPGS VVVV ,0

or

:ناحيه قطعPGS VV

0,0 GD II

Page 7: Fundamentals of Microelectronics · 2015-12-18 · Microsoft PowerPoint - F-Slide7.ppt [Compatibility Mode] Author: Dr Shamsi Created Date: 12/18/2015 11:47:20 PM

Figure: Transfer (or Mutual) Characteristics of n-Channel JFET

2

1

P

GSDSSDS V

VII

IDSS

VGS (off)=VP

off-Pinch ناحيه در GS/VDI مشخصه

Page 8: Fundamentals of Microelectronics · 2015-12-18 · Microsoft PowerPoint - F-Slide7.ppt [Compatibility Mode] Author: Dr Shamsi Created Date: 12/18/2015 11:47:20 PM

ID/VDS مشخصه

22 2 DSDSPGS

P

DSSD VVVV

VII

2

1

P

GSDSSD V

VII

PGD VV

PGD VV

Page 9: Fundamentals of Microelectronics · 2015-12-18 · Microsoft PowerPoint - F-Slide7.ppt [Compatibility Mode] Author: Dr Shamsi Created Date: 12/18/2015 11:47:20 PM

Figure: Typical drain characteristics of an n-channel JFET.

Saturation or Pinch off Reg.

Locus of pts where PGSDS VVV

ID/VDS مشخصه

Page 10: Fundamentals of Microelectronics · 2015-12-18 · Microsoft PowerPoint - F-Slide7.ppt [Compatibility Mode] Author: Dr Shamsi Created Date: 12/18/2015 11:47:20 PM

نماد الکتريکی

G

D

S

n-channel JFET

G

D

S

G

S

D

p-channel JFET

ID ID ID

Page 11: Fundamentals of Microelectronics · 2015-12-18 · Microsoft PowerPoint - F-Slide7.ppt [Compatibility Mode] Author: Dr Shamsi Created Date: 12/18/2015 11:47:20 PM

11

JFETنمونه ای از يک

Page 12: Fundamentals of Microelectronics · 2015-12-18 · Microsoft PowerPoint - F-Slide7.ppt [Compatibility Mode] Author: Dr Shamsi Created Date: 12/18/2015 11:47:20 PM

JFET باياس

Page 13: Fundamentals of Microelectronics · 2015-12-18 · Microsoft PowerPoint - F-Slide7.ppt [Compatibility Mode] Author: Dr Shamsi Created Date: 12/18/2015 11:47:20 PM

مثال

2

1

P

GSDSSD V

VII mAIVV

DSS

P

93

Determine the operating point.

Assume pinch-off region:

mAIormAIIIIVIkV

VIDD

DD

DGSDs

GSD 21

3219

223

19 22

PGSD

PGSD

VVVmAI

VVVmAI?

?

42

21So ID=2mA is not acceptable.

)3(26622101?

PGSDSDDDSD VVVVIkIkVmAI

Page 14: Fundamentals of Microelectronics · 2015-12-18 · Microsoft PowerPoint - F-Slide7.ppt [Compatibility Mode] Author: Dr Shamsi Created Date: 12/18/2015 11:47:20 PM

مدل سيگنال کوچک

DSSDP

m IIV

g 2

Page 15: Fundamentals of Microelectronics · 2015-12-18 · Microsoft PowerPoint - F-Slide7.ppt [Compatibility Mode] Author: Dr Shamsi Created Date: 12/18/2015 11:47:20 PM

مشترک-تقويت کننده سورس

dLout

in

dLmV

rRRR

rRgA

||

||

Page 16: Fundamentals of Microelectronics · 2015-12-18 · Microsoft PowerPoint - F-Slide7.ppt [Compatibility Mode] Author: Dr Shamsi Created Date: 12/18/2015 11:47:20 PM

مشترک-تقويت کننده گيت

dLout

mind

dm

Ldin

dLmV

rRRg

Rrifrg

RrR

rRgA

||

11

||

Page 17: Fundamentals of Microelectronics · 2015-12-18 · Microsoft PowerPoint - F-Slide7.ppt [Compatibility Mode] Author: Dr Shamsi Created Date: 12/18/2015 11:47:20 PM

مشترک-تقويت کننده درين

dm

dLout

in

mdL

dLV

rgr

RR

Rg

rR

rRA

1||

1||

||