fyc-10012ax_bx

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NINGBO FORYARD OPTO

ELECTRONICS CO.,LTD. LED DIGIT DISPLAY

PartNO.: FYS-10012AX/BX-XX

: Absolute maximum ratings (Ta=25)ValueParameter Symbol Test Condition Min Max Unit

Reverse Voltage VR IR=30A 5 ----- V

Forward Current IF ----- ------ 30 mA

Power Dissipation Pd ----- ------ 100 mW

Pulse Current IpeakDuty=0.1mS,

1KHz------ 150 mA

Operating

TemperatureTopr ----- -40 +85 C

Storage

TemperatureTstr ----- -40 +85 C

-XX: Surface / Lens color

Number 0 1 2 3 4 5

Ref Surface Color White Black Gray Red Green

Epoxy ColorWaterclear

Whitediffused

RedDiffused

GreenDiffused

YellowDiffused

Radiotech-trade http://www.rct.ru | [email protected] (+7 495) 795-08-05

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Description:Color Code & Chip characteristics: (Test Condition: IF=20mA)

ForwardVoltage(VF)

Unit:VEmitting Color

Dice

MaterialPeak Wave

Length(P)

SpectralLine

halfwidth(

1/2) Typ Max

LuminousIntensity

(Iv)Unit:mcd

H Red GaP 700nm 90nm 2.20 2.50 5.0S,

SRHi Red AlGaAs,SH 660nm 20nm 1.80 2.20 15-20

D Super Red AlGaAs,DH 660nm 20nm 1.80 2.20 20-30LR Ultra Red AlGaAs,DDH 660nm 20nm 1.90 2.40 26-38HR HE Red GaAsP 640nm 45nm 1.90 2.40 50-80

E Orange GaAsP 630nm 35nm 2.10 2.50 10-20A Amber GaAsP 610nm 35nm 2.10 2.50 15-20Y Yellow GaAsP 590nm 35nm 2.10 2.50 15-20G Green GaP 570nm 30nm 2.20 2.50 14-18Ultra brightnessUHR

Ultra HiRed

AlGaInP 645nm 20nm 2.10 2.50 80-150

UEUltra

OrangeAlGaInP 630nm 20nm 2.10 2.50 180-210

UA UltraAmber AlGaInP 610nm 20nm 2.10 2.50 90-120

UYUltra

YellowAlGaInP 590nm 20nm 2.10 2.50 150-200

UGUltra

GreenAlGaInP 570nm 30nm 2.20 2.50 60-100

PGUltra Pure

GreenInGaN 520nm 36nm 2.80 3.80 260-310

BGUltra Blue

GreenInGaN 505nm 36nm 2.80 3.80 260-310

B Blue InGaN 430nm 30nm 2.80 3.80 10-20470nm 30nm 2.80 3.80 80-90

UB Ultra Blue InGaN

460nm 30nm 2.80 3.80 80-90V UV InGaN 405nm 2.80 3.80 5-8W White InGaN X=0.29,y=0.30 2.80 3.80 180-200UW

UltraWhite

InGaN X=0.29,y=0.30 2.80 3.80 180-200

Segment-to-Segment Luminous Intensity ratio(Iv-M) 1.5:1


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1.0

0.5

0

350 400 450 500 550 600 650 700 750 800 850 900 950 1000

(A) (B) (C) (D) (2) (3) (8) (4) (1) (6) (5) (9) (10)

Wavelength(nm)RELATIVE INTENSITY Vs WAVELENGTH( )p

(1) - GaAsP/GaAs 655nm/Red

(2) - GaP 570nm/Yellow Green

(3) - GaAsP/GaP 585nm/Yellow

(4) - GaAsp/GaP 635nm/Orange & Hi-Eff Red

(5) - GaP 700nm/Bright Red

(6) - GaAlAs/GaAs 660nm/Super Red

(8) - GaAsP/GaP 610nm/Super Red

(9) - GaAlAs 880nm

(10) - GaAs/GaAs & GaAlAs/GaAs 940nm

(A) - GaN/SiC 430nm/Blue

(B) - InGaN/SiC 470nm/Blue

(C) -

(D) -

InGaN/SiC 505nm/Ultra Green

InGaAl/SiC 525nm/Ultra Green

50

40

30

20

10

01.2 1.6 2.0 2.4 2.6 3.0

1 6 34 5 28

4.0

3.0

2.0

1.0

020 40 60 80 100

1

5

B

50

40

30

20

10

020 40 60 80 100

1

62,4,8,A

3

5

32

1

0.5

0.2

0.1-30 -20 -10 0 10 20 30 40 50 60 70

1542

3

1098

76

5

4

3

2

11 10 100 1000 10,000

10KHz3KHz

1KHz

300KHz

100KHz F-REFRESH RATE 100KHz30KHz

10KHz

3KHz

1KHz

300Hz

100Hz109

8765

4

3

2

11 10 100 1000 10,000

FORWARD VOLTAGE (Vf)

FORWARD CURRENT VS.

FORWARD VOLTAGERELATIVE LUMINOUSINTENSITY VS. FORWARDCURRENT

AMBIENT TEMPERATURE Ta( )

FORWARD CURRENT VS. AMBIENTTEMPERATURE

tp-PULSE DURATION uS(1,2,3,4,6,8,B.D.J.K)

NOTE:25 free air temperature unless otherwise specified

tp-PULSE DURATION uS

FORWARDCUR

RENT(mA)

FORWARD CURRENT (mA)

RELATIVELUMINOU

SINTENSITY

FORWARDCUR

RENT(mA)

RELAT

IVELUMINOUSINTENSITY

AMBIENT TEMPERATURE Ta( )

(5)

IpeakMAX.

IDCMAX.

IpeakMAX.

IDC

MAX.


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PART N

UMBER

RANK

Q'TY

TOTAL

C/NO

.

5

PRODUCT: LED

TYPE:

Q'TY: PCS

N.W: Kgs

Meas:40.5x30.5x39.5CMG.W: Kgs

PASSED

QC1Q.A:

Date:

Quanlity:

Part No:

OPTOELECTRONICSPbFORYARD

VF:

D:

type QTY/foam(pcs) QTY /Bundle (pcs) QTY /CARTONDimensionFYS-10012A/Bx-xx 4*10=40 40*16=640 640*4=2560


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