gan, a1n, inn and related...
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GaN, A1N, InN andRelated Materials
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Cambridge University Press978-1-107-40886-9 - Materials Research Society Symposium Proceedings: Volume 892:GaN, AIN, InN and Related MaterialsEditors: Martin Kuball, Thomas H. Myers, Joan M. Redwing and Takashi MukaiFrontmatterMore information
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Cambridge University Press978-1-107-40886-9 - Materials Research Society Symposium Proceedings: Volume 892:GaN, AIN, InN and Related MaterialsEditors: Martin Kuball, Thomas H. Myers, Joan M. Redwing and Takashi MukaiFrontmatterMore information
MATERIALS RESEARCH SOCIETYSYMPOSIUM PROCEEDINGS VOLUME 892
GaN, AIN, InN andRelated Materials
Symposium held November 28-December 2, 2005, Boston, Massachusetts, U.S.A.
EDITORS:
Martin KuballUniversity of Bristol
Bristol, United Kingdom
Thomas H. MyersWest Virginia University
Morgantown, West Virginia, U.S.A.
Joan M. RedwingThe Pennsylvania State University
University Park, Pennsylvania, U.S.A.
Takashi MukaiNichia CorporationTokushima, Japan
IMIRIS1Materials Research Society
Warrendale, Pennsylvania
www.cambridge.org© in this web service Cambridge University Press
Cambridge University Press978-1-107-40886-9 - Materials Research Society Symposium Proceedings: Volume 892:GaN, AIN, InN and Related MaterialsEditors: Martin Kuball, Thomas H. Myers, Joan M. Redwing and Takashi MukaiFrontmatterMore information
cambridge university press Cambridge, New York, Melbourne, Madrid, Cape Town, Singapore, São Paulo, Delhi, Mexico City
Cambridge University Press32 Avenue of the Americas, New York ny 10013-2473, USA
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Cambridge University Press978-1-107-40886-9 - Materials Research Society Symposium Proceedings: Volume 892:GaN, AIN, InN and Related MaterialsEditors: Martin Kuball, Thomas H. Myers, Joan M. Redwing and Takashi MukaiFrontmatterMore information
CONTENTS
Preface xxv
Materials Research Society Symposium Proceedings xxvi
UVAND WHITE LIGHT LEDs
* Deep Ultraviolet Light Emitting Diodes With EmissionBelow 300 nm 3
M.AsifKhan
Short-Period AlGaN Based Superlattices for Deep UVLight Emitting Diodes Grown By Gas Source MolecularBeam Epitaxy 13
S.A. Nikishin, B.A. Borisov, V.V. Kuryatkov, M. Holtz,and H. Temkin
Towards a Novel Broadband Spectrally Dynamic SolidState Light Source 19
David B. Nicol, Shalini Gupta, Nola Li, Ali Asghar,Elton Graugnard, Christopher Summers, andIan T. Ferguson
VPE: GaN
Stress and Microstructure Evolution in CompositionallyGraded Al^GaJV Buffer Layers for GaN Growth on Si 27
Xiaojun Weng, Srinivasan Raghavan, Elizabeth C. Dickey,and Joan M. Redwing
DOPANTS AND DEFECTS
X-ray Standing Wave Investigations of Si DopantIncorporation in GaN 35
M. Siebert, Th. Schmidt, J.I. Flege, J. Zegenhagen,T.-L. Lee, S. Figge, D. Hommel, and J. Falta
*Invited Paper
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MBE: GaN
The Use of Cathodoluminescence During MolecularBeam Epitaxy Growth of Gallium Nitride to DetermineSubstrate Temperature 43
Kyoungnae Lee, Eric D. Schires, and Thomas H. Myers
Scanning Tunneling Microscopy Study of Cr-DopedGaN Surface Grown by RF Plasma Molecular BeamEpitaxy 49
Muhammad Baseer Haider, Rong Yang,Hamad Al-Brithen, Costel Constantin,Arthur R. Smith, Gabriel Caruntu, andCharles J. O'Connor
In Situ Investigation of Surface Stoichiometry DuringInGaN and GaN Growth by Plasma-Assisted MolecularBeam Epitaxy Using RHEED-TRAXS 55
Randy P. Tompkins, Brenda L. VanMil, Eric D. Schires,Kyoungnae Lee, Yewhee Chye, David Lederman, andThomas H. Myers
ELECTRONIC DEVICES I
High Power AlGaN/GaN Schottky Barrier Diode With1000 V Operation 63
Seikoh Yoshida, Nariaki Ikeda, Jiang Li, Takahiro Wada,Hiroshi Kambayashi, and Hironari Takehara
Effects of the High-Refractive Index SiNx Passivation onAlGaN/GaN HFETs With a Very Low Gate-LeakageCurrent 69
Hiroshi Kambayashi, Takahiro Wada, Nariaki Ikeda,and Seikoh Yoshida
InN
Properties of InN Grown by High-Pressure CVD 77Mustafa Alevli, Goksel Durkaya, Vincent Woods,Ute Haboeck, Hun Kang, Jayantha Senawiratne,Martin Strassburg, Ian T. Ferguson, Axel Hoffmann,and Nikolaus Dietz
VI
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Polarity Dependence of In-Rich InGaN and InN/InGaNMQWs 83
Song-Bek Che, Takuro Shinada, Tomoyasu Mizuno,Yoshihiro Ishitani, and Akihiko Yoshikawa
Influence of Nitrogen Species on InN Grown by PAMBE 89P.A. Anderson, RJ. Kinsey, C.E. Kendrick, I. Farrell,D. Carder, RJ. Reeves, and S.M. Durbin
Carrier Recombination, Relaxation, and TransportDynamics in InN 95
Fei Chen, Alexander N. Cartwright, Hai Lu, andWilliam J. Schaff
Electron Transport Properties of InN 105Rebecca E. Jones, Henricus C. M. van Genuchten,Sonny X. Li, Leon Hsu, Kin Man Yu, Wladek Walukiewicz,Joel W. Ager III, Eugene E. Haller, Hai Lu, andWilliam J. Schaff
JOINT SESSION:NITRIDE MATERIALS FOR DEVICES
* III-V Epitaxial Growth for Nitride Devices 113Russell Dupuis, Theodore Chung, Wonseok Lee,Peng Li, Jae Limb, Jae-Hyun Ryou, andDongwon Yoo
Structural, Optical, and Magnetic Behavior of In SituDoped, MOCVD-Grown GarJMnJV Epilayers andHeterostructures 125
Matthew H. Kane, William E. Fenwick, Martin Strassburg,Ali Asghar, Shalini Gupta, Hun Kang, Nola Li,Christopher J. Summers, and Ian T. Ferguson
Fe-Centers in GaN as Candidates for SpintronicsApplications 131
Enno Malguth, Axel Hoffmann, Matthew Phillips,and Wolfgang Gehlhoff
*Invited Paper
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Characterization of a-Plane AlGaN/GaN HeterostructureGrown on r-Plane Sapphire Substrate 137
Motoaki Iwaya, Yoshizane Okadome, Yosuke Tsuchiya,Daisuke Iida, Aya Miura, Hiroko Furukawa, Akira Honshio,Yasuto Miyake, Satoshi Kamiyama, Hiroshi Amano, andIsamu Akasaki
Growth and Characterization of Semipolar InGaN/GaNMultiple Quantum Wells and Light-Emitting Diodes on(10-1-1) GaN Templates 143
Arpan Chakraborty, T. Onuma, T.J. Baker, S. Keller,S.F. Chichibu, S.P. DenBaars, S. Nakamura, J.S. Speck,and U.K. Mishra
POSTER SESSION:InN
InN Nano Rods and Epitaxial Layers Grown by HVPE onSapphire Substrates and GaN, AlGaN, A1N Templates 151
Alexander Syrkin, Alexander Usikov, Vitali Soukhoveev,Oleg Kovalenkov, Vladimir Ivantsov, Vladimir Dmitriev,Charles Collins, Eric Readinger, Natalia Shmidt,Sergey Nikishin, Vladimir Kuryatkov, Daoying Song,and Mark Holtz
Modification of InN Properties by Interactions WithHydrogen and Nitrogen 155
Maria Losurdo, Maria Michela Giangregorio,Giovanni Bruno, Tong-Ho Kim, Pae Wu, Soojeong Choi,Mike Morse, April Brown, Francesco Masia,Antonio Polimeni, and Mario Capizzi
Temperature Dependence of Transport Properties ofInN Films 161
J.S. Thakur, R. Naik, V.M. Naik, D. Haddad,G.W. Auner, H. Lu, and W.J. Schaff
vin
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POSTER SESSION:UVLED
Reliability and Degradation Modes of 280 nm Deep UVLEDs on Sapphire 169
Zheng Gong, Sameer Chhajed, Mikhail E. Gaevski,Wenhong H. Sun, Vinod Adivarahan, Maxim Shatalov,and M. Asif Khan
Origins of Parasitic Emissions from 353 nm AlGaN-BasedUV LEDs Over SiC Substrates 175
Ji-Soo Park, Daryl W. Fothergill, Patrick Wellenius,Seann M. Bishop, John F. Muth, and Robert F. Davis
Comparison of the Electroluminescence of Blue andDeep-UV Light-Emitting Diodes at Elevated Temperatures 181
Xian-An Cao, T. Stecher, and S.F. LeBoeuf
Analysis of High-Power Packages for White-Light-Emitting Diode Lamps With Remote Phosphor 187
Hong Luo, Jong Kyu Kim, Yangang Xi,E. Fred Schubert, Jaehee Cho, Cheolsoo Sone,and Yongjo Park
POSTER SESSION:ELECTRICAL TRANSPORT
Al Mole Fraction Dependence of Deep Levels inAlGaN/GaN-HEMT Structures Estimated by CVProfiling 195
Junjiroh Kikawa, Katsuhiro Imada, Tomoyuki Yamada,Tadayoshi Tsuchiya, Yuichi Hiroyama, Masayuki Iwami,Tsutomu Araki, Akira Suzuki, and Yasushi Nanishi
POSTER SESSION:NANO
Epitaxal Growth of InGaN Quantum Dots Grown byMOVPE: Effect of Capping Process on the Structuraland Optical Properties 203
Tomohiro Yamaguchi, Kathrin Sebald,Jiirgen Gutowski, Stephan Figge, and Detlef Hommel
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The Mean Inner Potential of GaN Measured FromNanowires Using Off-Axis Electron Holography 209
Andrew See Weng Wong, Ghim Wei Ho,Rafal Dunin-Borkowski, Takeshi Kasama,Rachel A. Oliver, Pedro M.F.J. Costa, andColin John Humphreys
Raman Scattering of Self-Assembled Gallium NitrideNanorods Synthesized by Plasma-Assisted MolecularBeam Epitaxy 215
D. Wang, C.-C. Tin, J. R. Williams, M. Park, Y.S. Park,C. M. Park, T.W. Kang, and W.-C. Yang
A Non-Thermal Plasma Reactor for the Synthesis ofGallium Nitride Nanocrystals 221
Rebecca Joy Anthony, Elijah Thimsen, Joe Johnson,Stephen A. Campbell, and Uwe Kortshagen
Opto-Electronic Simulation of GaN Nanowire Lasers 225Liang Chen and Elias Towe
Morphological Study of InN Films and Nanorods GrownbyH-MOVPE 231
Hyun Jong Park, Sang Won Kang, Olga Kryliouk, andTim Anderson
POSTER SESSION:VISIBLE LED
Analysis of the Quantum Efficiency of GalnN/GaN LightEmitting Diodes in the Range of 390-580 nm 239
Wei Zhao, Yufeng Li, Yong Xia, Mingwei Zhu,Theeradetch Detchprohm, E. Fred Schubert, andChristian Wetzel
Visible Light-Emitting Diodes Grown by Plasma AssistedMolecular Beam Epitaxy on Hydride Vapor-Phase EpitaxyGaN Templates and the Development of Dichromatic(Phosphorless) White LEDs 245
Jasper S. Cabalu, Adrian D. Williams, Tai-Chou P. Chen,Ryan France, and Theodore D. Moustakas
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Electrical Characterization of Blue Light Emitting Diodesas a Function of Temperature 251
Madhu Murthy, Alphonse Marie Kamto Tegueu,Michael A. Awaah, Dake Wang, Minseo Park,Frederick J. Walker, and Das Kalyan Kumar
Study of Laser-Debonded GaN Light Emitting Diodes 257C.P. Chan, T.M. Yue, C. Surya, A.M.C. Ng,A.B. Djurisic, C.K. Liu, and M. Li
Role of Deep Levels in DC Current Aging of GaN/InGaNLight-Emitting Diodes Studied by Capacitance and PhotocurrentSpectroscopy 263
Antonio Castaldini, Anna Cavallini, Lorenzo Rigutti,Matteo Meneghini, Simone Levada, Gaudenzio Meneghesso,Enrico Zanoni, Volker Harle, Thomas Zahner, andUlrich Zehnder
3D Simulations on Realistic GaN-Based Light-EmittingDiodes 269
Simon Li, Z.Q. Li, O. Shmatov, C.S. Xia, and W. Lu
POSTER SESSION:SENSOR/DETECTOR/ELECTRONIC DEVICES
Application of Aluminum Nitride Thin Film forMicromachined Ultrasonic Transducers 277
Qianghua Wang, Jianzeng Xu, Changhe Huang,and Gregory W. Auner
Mechanism of Current Leakage in Ni Schottky Diodeson Cubic GaN and AlxGa!_xN Epilayers 283
Donat J. As, Stefan Potthast, Jara Fernandez,Klaus Lischka, Hiroyuki Nagasawa, andMasayuki Abe
Simulation of Self-Heating and Temperature Effect inGaN-Based Metal-Semiconductor Field-Effect Transistor 289
Valentin D. Turin and Alexander A. Balandin
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Double-Ion-Implanted GaN MESFETs With ExtremelyLow Source/Drain Resistance 295
Kazuki Nomoto, Nobuyuki Ito, Taku Tajima,Takeshi Kasai, Tomoyoshi Mishima, Taroh Inada,Masataka Satoh, and Tohru Nakamura
Electrical Domains and Sub-Millimeter Signal Generationin AlGaN/GaN Superlattices 301
Irina Gordion, Alexander Manasson, andVladimir I. Litvinov
Growth, Processing and Characterization of GaN/AlGaN/SiCVertical n-p Diodes 307
Steven Boeykens, Maarten Leys, Marianne Germain,Jef Poortmans, Benny Van Daele, Staf Van Tendeloo,Ronnie Belmans, and Gustaaf Borghs
Fabrication and Device Characteristics of BulkGaN-Based Schottky Diodes 313
Yi Zhou, Dake Wang, Claude Ahyi, Chin-Che Tin,John Williams, Minseo Park, N. Mark Williams, and
Andrew Hanser
Reduction of Base Access Resistance in AlGaN/GaNHeteroj unction Bipolar Transistors Using GalnN BaseCap Layer and Selective Epitaxial Growth 319
Jay M. Shah, Thomas Gessmann, Hong Luo, Yangang Xi,Kaixuan Chen, Jong Kyu Kim, and E. Fred Schubert
Design and Development of MBE Grown AlGaN/GaNHEMT Devices on SiC Substrates for RF Applications 325
Ashok K. Sood, Rajwinder Singh, Yash R. Puri,Frederick W. Clarke, Amir Dabiran, Peter Chow,Jie Deng, and James CM. Hwang
POSTER SESSION:CONTACTS/PROCESSING
Fabrication and Electrical Characteristics of Ti/Al OhmicContact to Si+ Implanted GaN 337
Nobuyuki Ito, Akira Suzuki, Mitsunori Kawamura,Kazuki Nomoto, Takeshi Kasai, Tomoyoshi Mishima,Taroh Inada, Tohru Nakamura, and Masataka Satoh
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W2B Based High Thermal Stability Ohmic Contacts ton-GaN. 341
Rohit Khanna, S.J. Pearton, C.J. Kao, I. Kravchenko,F. Ren, G.C. Chi, A. Dabiran, and A. Osinsky
Anti-Diffusion Barriers for Gold-Based Metallization to p-GaN 351Anna Piotrowska, Eliana Kaminska, Marek Guziewicz,Elzbieta Dynowska, Anna Stonert, Andrzej Turos,Stephan Figge, Roland Kroger, and Detlef Hommel
Substrate Influence on the High-Temperature AnnealingBehavior of GaN: Si vs. Sapphire 357
David Pastor, Ramon Cusco, Luis Artus, Enrique Iborra,Juan Jimenez, Francisca Peiro, German Gonzalez-Diaz,and Enrique Calleja
Planarization of GaN by the Etch-Back Method 363Adrian D. Williams and T.D. Moustakas
GaN-Based Light Emitting Diode With TransparentNanoparticles-Embedded p-Ohmic Electrode 369
June O. Song, Hun Kang, David Nicol, Ian T. Ferguson,Hyun-Gi Hong, and Tae-Yeon Seong
ELECTRONIC DEVICES II
Ill-Nitride Epitaxial Material on Large-Diameter Semi-Insulating SiC Substrates for High-Power RF Transistors 377
Adam W. Saxler, Edward L. Hutchins, Jason Jenny, andAustin Blew
Normally Off-Mode AlGaN/GaN Heterostructure FieldEffect Transistor Using p-Type Gate Contact 383
Norio Tsuyukuchi, Kentaro Nagamatsu,Yoshikazu Hirose, Motoaki Iwaya,Satoshi Kamiyama, Hiroshi Amano, andIsamu Akasaki
Flip-Chip Mounting for Improved Thermal Managementof AlGaN/GaN HFETs 389
Hangfeng Ji, Andrei Sarua, Martin Kuball, Jo Das,Wouter Ruythooren, Marianne Germain, andGustaafBorghs
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CONTACTS TO HEMTs
Low-Temperature Selected Area Re-Growth of OhmicContacts for III-N FETs 397
Yoganand N. Saripalli, Chang Zeng, Yawei Jin,Joseph P. Long, Judith A. Grenko, Krishnanshu Dandu,Mark A.L. Johnson, and Doug W. Barlage
ELECTRICAL/TRANSPORT PROPERTIES
Perturbation of Charges in AlGaN/GaN HeterostructuresStudied by Nanoscale Capacitance-Voltage Technique 405
Goutam Koley and Lakshminarayanan Lakshmanan
Weak Antilocalization in Polarization-Doped AlGaN/GaNHeterostructures 411
Nicolas Henri Thillosen, Thomas Schapers,Nicoleta Kaluza, Hilde Hardtdegen, andVitaliy Guzenko
Polarization-Induced 3-Dimensional Electron Slabs inGraded AlGaN Layers 417
John Simon, Kejia (Albert) Wang, Huili Xing,Debdeep Jena, and Siddharth Rajan
Highly Doped p-Type a-Plane GaN Grown on r-PlaneSapphire Substrate 423
Yosuke Tsuchiya, Yoshizane Okadome,Hiroko Furukawa, Akira Honshio, Yasuto Miyake,Takeshi Kawashima, Motoaki Iwaya,Satoshi Kamiyama, Hiroshi Amano, andIsamu Akasaki
JOINT SESSION:ZINC OXIDE MATERIALS AND
DEVICES INCLUDING ALLOYS II
* ZnCdO/ZnMgO and ZnO/AlGaN Heterostructures forUV and Visible Light Emitters 429
A.V. Osinsky, Jianwei W. Dong, J.Q. Xie, B. Hertog,A.M. Dabiran, P.P. Chow, S.J. Pearton, D.P. Norton,D.C. Look, W. Schoenfeld, O. Lopatiuk, L. Chernyak,M. Cheung, A.N. Cartwright, and M. Gerhold
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MgZnO Nanocrystallites: Photoluminescence and PhononProperties 439
John L. Morrison, Xiang-Bai Chen, Jesse Huso,Heather Hoeck, James Mitchell, Leah Bergman,and Tsvetanka Zheleva
Plasma-Assisted MOCVD Growth of ZnO Thin Films 445Maria Losurdo, Maria Michela Giangregorio,Pio Capezzuto, Giovanni Bruno, Graziella Malandrino,Manuela Blandino, and Ignazio Fragala
Metal Organic Chemical Vapor Deposition of ZnO 451William E. Fenwick, Vincent T. Woods, Ming Pan,Nola Li, Matthew H. Kane, Shalini Gupta,Varatharajan Rengarajan, Jeff Nause, andIan T. Ferguson
Characteristics of a Phosphorus-Doped p-Type ZnO FilmbyMBE 457
Faxian X. Xiu, Zheng Yang, Mandalapu J. Leelaprasanna,and Jianlin L. Liu
VISIBLE LED + LD
A Semipolar (10-1-3) InGaN/GaN Green Light EmittingDiode 465
Rajat Sharma, P. Morgan Pattison, Troy J. Baker,Benjamin A. Haskell, Robert M. Farrell, Hisashi Masui,Feng Wu, Steven P. DenBaars, James S. Speck, andShuji Nakamura
Charge Profiling of the p-AlGaN Electron Blocking Layerin AlGalnN Light Emitting Diode Structures 471
Yong Xia, Yufeng Li, Wei Zhao, Mingwei Zhu,Theeradetch Detchprohm, E. Fred Schubert, andChristian Wetzel
OPTICAL PROPERTIES
Time-Resolved Spectroscopy of Excitons Bound at ShallowNeutral Donors in HVPE GaN 479
Bo Monemar, P.P. Paskov, J.P. Bergman, T. Malinauskas,K. Jarasiunas, A.A. Toropov, T.V. Shubina, and A. Usui
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Room Temperature Strong Coupling in Low Finesse GaNMicrocavities 485
Ian R. Sellers, Fabrice Semond, Mathieu Leroux,Jean Massies, Pierre Disseix, Guillaume Malpuech,A.-L. Henneghien, Joel Leymarie, and A. Vassan
Optical Properties of GaN Photonic Crystal MembraneNanocavities at Blue Wavelengths 491
Yong Seok Choi, Cedrik Meier, Raj at Sharma,Kevin Hennessy, Elaine D. Haberer, Shuji Nakamura,and Evelyn L. Hu
BULK + HVPE
Growth of Large A1N Single Crystals Along the [0001]Direction 499
Ziad Georges Herro, Dejin Zhuang, Raoul Schlesser,Ramon Collazo, and Zlatko Sitar
Oxidation of Aluminum Nitride for Defect Characterization 505James H. Edgar, Z. Gu, K. Taggart, J. Chaudhuri,L. Nyakiti, R.G. Lee, and R. Witt
High Quality GaN Layers Grown on Slightly MiscutSapphire Wafers 511
Peter Bruckner, Martin Feneberg, Klaus Thonke,Frank Habel, and Ferdinand Scholz
STRUCTURAL
* Structural Analysis of ELO-GaN Grown on SapphireUsing the X-ray Micro-Beam of an 8-GeV Storage Ring 519
Takao Miyajima, Shingo Takeda, Hideaki Kurihara,Kyoko Watanabe, Madomi Kato, Nobuhide Hara,Yoshiyuki Tsusaka, Junji Matsui, Yoshihiro Kudo,Shigetaka Tomiya, Shu Goto, Masao Ikeda, andHironobu Narui
Intersecting Basal Plane and Prismatic Stacking FaultStructures in GaN/AIN Epilayers on On-Axis andOff-Cut 6H-SiC Substrates 531
J. Bai, X. Huang, and Michael Dudley
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Dislocation Reduction and Structural Properties of GaNLayers Grown on N+-Implanted AIN/Si (111) Substrates 537
Muhammad Jamil, James R. Grandusky, Vibhu Jindal,Neeraj Tripathi, and Fatemeh Shahedipour Sandvik
Oxygen Segregation to Nanopipes in Gallium Nitride 543Michael E. Hawkridge and David Cherns
POSTER SESSION:OPTICAL PROPERTIES
Polarized Photoluminescence Study on AlGaN of AlGaN/GaNHeterostructure 551
Sachio Kitagawa, Kenichi Kosaka, Tadayoshi Tsuchiya,Akira Suzuki, Tsutomu Araki, and Yasushi Nanishi
Structural and Optical Properties of MOCVD InA1NEpi layers 557
S. Hernandez, K. Wang, D. Amabile, E. Nogales,D. Pastor, R. Cusco, L. Artus, R.W. Martin,K.P. O'Donnell, I.M. Watson, and RENiBEl Network
Surface Recombination and Vacuum/GaN/AlGaN SurfaceQuantum Wells 563
Xiyao Zhang, Ian Patrick Wellenius, Ailing Cai,John F. Muth, John Roberts, Pradeep Rajagopal,Jim Cook, Eddie Piner, and Kevin Linthicum
Cu Induced Optical Transitions in MOCVD Grown CuDoped GaN 569
Jayantha Senawiratne, Martin Strassburg, Adam Payne,Ali Asghar, William Fenwick, Nola Li, Ian Ferguson,and Nikolaus Dietz
Effects of GaN Passivation With SiO2 and SiNx Studied byPhotoluminescence and Surface Potential Electric ForceMicroscopy 575
S. Chevtchenko, M.A. Reshchikov, K. Zhu, Y.-T. Moon,A.A. Baski, and H. Morko9
Refractive Indices of A-Plane GaN Thin Films on R-PlaneSapphire 581
Ailing Cai, Ian Patrick Wellenius, Mike Gerhold,John F. Muth, Andrei Osinsky, J.Q. Xie, andJ.W. Dong
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High Quantum Efficiency of Photoluminescence in GaNandZnO 587
Michael A. Reshchikov, Xing Gu, Bill Nemeth,Jeff Nause, and Hadis Morko£
Photoluminescence in Wurtzite GaN Containing Carbon 593Michael A. Reshchikov, Random H. Patillo, andKathleen C. Travis
Characterization of the Blue Emission of Tm/ErCo-Implanted GaN 599
Iman S. Roqan, Carol Trager-Cowan, Ben Hourahine,Katharina Lorenz, Emilio Nogales, Kevin P. O'Donnell,Robert W. Martin, Eduardo Alves, S. Ruffenach, andOlivier Briot
Correlation Between Resistivity and Yellow LuminescenceIntensity of GaN Layers Grown by MOCVD 605
Akihiro Hinoki, Yuichi Hiroyama, Tadayoshi Tsuchiya,Tomoyuki Yamada, Masayuki Iwami, Katsuhiro Imada,Junjiroh Kikawa, Tsutomu Araki, Akira Suzuki, andYasushi Nanishi
Influence of the Annealing Ambient on Structural andOptical Properties of Rare Earth Implanted GaN 611
K. Lorenz, E. Nogales, R. Nedelec, J. Penner,R. Vianden, E. Alves, R.W. Martin, andK.P. O'Donnell
POSTER SESSION:DOPANTS/DEFECTS
Donor-Like Deep Level Defects in GaN Characterized byDouble-Correlation Deep Level Transient Spectroscopy 619
Mo Ahoujja, M. Hogsed, Y.K. Yeo, and R.L. Hengehold
A Microspectroscopic Study of Cap Damage in AnnealedRE-Doped AIN-Capped GaN 625
E. Nogales, K. Lorenz, K. Wang, I.S. Roqan, R.W. Martin,K.P. O'Donnell, E. Alves, S. Ruffenach, and O. Briot
SiH4 Exposure of GaN Surfaces: A Useful Tool forHighlighting Dislocations 631
Rachel A. Oliver, Menno J. Kappers, Joy Sumner,Ranjan Datta, and Colin J. Humphreys
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POSTER SESSION:HETEROSTRUCTURES
Misfit Dislocations in Green-Emitting InGaN/GaNQuantum Well Structures 639
Pedro M.F.J. Costa, Ranjan Datta, Menno J. Kappers,Mary E. Vickers, and Colin J. Humphreys
Comparative Investigation of Quantum-Dot-LikeLocalization Centers in InGaN Quantum Well andQuantum Dot Structures 645
Kathrin Sebald, Henning Lohmeyer, Jurgen Gutowski,Tomohiro Yamaguchi, and Detlef Hommel
POSTER SESSION-STRUCTURAL
Stress Evolution During the Early Stages of A1N VaporGrowth 653
B. Wu, J. Bai, V.L. Tassev, M. Lai Nakarmi, W. Sun,X. Huang, M. Dudley, H. Zhang, D.F. Bliss, J. Lin,H. Jiang, J. Yang, and M. Asif Khan
Characterization of Lattice Mosaic of a-Plane GaN Grownon r-Plane Sapphire by Metalorganic Vapor-Phase Epitaxy 659
Kazuhide Kusakabe, Shizutoshi Ando, andKazuhiro Ohkawa
Study of ELOG GaN for Application in the Fabricationof Micro-Channels for Optoelectronic Devices 665
L.E. Rodak, N.J. Berry Ann, Kalyan Reddy Kasarla,Nanying Yang, and D. Korakakis
What Does an (a+c) Dislocation Core Look Like inWurtziteGaN? 671
Imad Belabbas, Gerard Nouet, A. Bere, J. Chen,S. Petit, M.A. Belkhir, P. Ruterana, and Ph. Komninou
Characterization of Nitride Thin Films by ElectronBackscatter Diffraction and Electron Channeling ContrastImaging 677
Carol Trager-Cowan, Francis Sweeney, AJ. Wilkinson,P.W. Trimby, A.P. Day, A. Gholinia, N.-H. Schmidt,PJ. Parbrook, and I.M. Watson
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POSTER SESSION:VPE
Polarity Control of LP-MOVPE GaN Using N2 as theCarrier Gas 685
Seiji Mita, Ramon Collazo, Raoul Schlesser, andZlatko Sitar
Effects of GaN Template Annealing on the Optical andMorphological Quality of the Homoepitaxially OvergrownGaN Layer 691
James R. Grandusky, Vibhu Jindal, Muhammad Jamil,and Fatemeh Shahedipour-Sandvik
A TEM Investigation of Crack Reduction in AlGaN/GaNHeterostructures Using an AIN Interlayer 697
Peter D. Cherns, Clifford McAleese, Jonathan S. Barnard,Menno J. Kappers, and Colin J. Humphreys
POSTER SESSION:MBE
Growth of Nonpolar AIN and AlGaN on 4H-SiC (1-100)by Molecular Beam Epitaxy 705
Rob Armitage, Masahiro Horita, Jun Suda, andTsunenobu Kimoto
Epitaxial c-GaAs/h-GaN Heterostructures . 711Vladimir V. Chaldyshev, Yurii G. Musikhin,Nikolai A. Bert, Bent Nielsen, Emilio E. Mendez,Zhixun Ma, and Todd Holden
Growth of c-GaN Films on the Nitridated p-Ga2O3
Substrates Using RF-MBE 717Tsutomu Araki, Chiharu Morioka, Junichi Wada,Keisuke Fujiwara, Hiroshi Minami, Yasushi Nanishi,Shigeo Ohira, Norihito Suzuki, and Toetsu Shishido
Microstructure and Strain-Free Lattice Parameters ofScxGalxN Films 723
Michelle A. Moram, Timothy B. Joyce, Paul R. Chalker,Zoe H. Barber, and Colin J. Humphreys
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Compensation in Be-Doped Gallium Nitride Grown UsingMolecular Beam Epitaxy 729
Kyoungnae Lee, Brenda VanMil, Ming Luo,Thomas H. Myers, Andrew Armstrong, Steve A. Ringel,Mikko Rummukainen, and Kimmo Saarinen
POSTER SESSION:HVPE
What Makes Good Templates for HVPE GaN Growth? 737Corina E.C. Dam, Andrzej P. Grzegorczyk,Paul R. Hageman, and Poul K. Larsen
Thick AIN Layers Grown by HVPE on Sapphire Substrates 743Vitali Soukhoveev, Alexander Usikov, Oleg Kovalenkov,Vladimir Ivantsov, Alexander Syrkin, Vladimir Dmitriev,Charles Collins, and Michael Wraback
Temperature and Dislocation Density Effects on theThermal Conductivity of Bulk Gallium Nitride 749
Christian Mion, John F. Muth, Edward A. Preble,and Drew Hanser
POSTER SESSION-BULK
Rapid Growth of Bulk GaN Crystal Using GaN Powder asSource Material 757
Huaqiang Wu, Joseph Spinelli, Phanikumar Konkapaka,and Michael G. Spencer
Defect Content Evaluation in Single-Crystal AIN Wafers 763Robert T. Bondokov, Kenneth E. Morgan, Raj Shetty,Wayne Liu, Glen A. Slack, Mark Goorsky, andLeo J. Schowalter
Atomic Force Microscope Study on Native AIN Substrates 769Sandra B. Schujman, Wayne Liu, Nicholas Meyer,Joseph A. Smart, and Leo J. Schowalter
Crystal Growth and Defect Characterization of AIN SingleCrystals 775
Shaoping Wang, Balaji Raghothamachar, Michael Dudley,and Andrew G. Timmerman
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Structural Characterization of GaN Single Crystal LayersGrown by Vapor Transport From a Gallium Oxide(Ga2O3) Powder Source 781
Balaji Raghothamachar, Phanikumar Konkapaka,Huaqiang Wu, Michael Dudley, and Michael Spencer
NANO
* MOCVD Growth and Characterization of AlGalnNNanowires and Nanostructures 789
Jung Han, K. Kim, Jie Su, Maria Gherasimova,Arto V. Nurmikko, S.F. Chichibu, and C. Broadbridge
High Degree of Crystalline Perfection in SpontaneouslyGrown GaN Nanowires 799
Kris A. Bertness, J.B. Schlager, N.A. Sanford, A.Roshko, T.E. Harvey, A.V. Davydov, I. Levin, M.D.Vaudin, x J.M. Barker, P.T. Blanchard, and L.H. Robins
Microphotoluminescence Studies on Single GaN Nanocolumns 805K. Sebald, J. Gutowski, N. Thillosen, S. Montanari,R. Meijers, R. Calarco, N. Kaluza, H. Hardtdegen,and H. Lttth
HETEROSTRUCTURES: InGaN
* Quantum-Confined Stark Effect and Polarization Field inSingle Quantum Well InGaN/GaN LEDs 813
Robert J. Kaplar, Steven R. Kurtz, and Daniel D. Koleske
Luminescence Efficiency of InGaN/GaN Quantum Wellson Bulk GaN Substrate 825
Matthias Dworzak, Thomas Stempel, Axel Hoffmann,Gijs Franssen, S. Grzanka, Tadeusz Suski, R. Czernecki,M. Leszczynski, and I. Grzegory
Quantum Well Network Structures: Investigating Long-Range Thickness Fluctuations in Single InGaN/GaNQuantum Wells 831
Nicole K. van der Laak, Rachel A. Oliver,Menno J. Kappers, and Colin J. Humphreys
* Invited Paper
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Surface Morphology and Island Shape of MOVPE GrownInGaN Nano-Island Ensembles Studied by STM 837
Subhashis Gangopadhyay, Thomas Schmidt, Sven Einfeldt,Tomohiro Yamaguchi, Detlef Hommel, and Jens Falta
Near-Field Photoluminescence Spectroscopy of InGaNQuantum Dots 843
A.M. Mintairov, J.L. Merz, D.S. Sizov, V.S. Sizov,V.V. Lundin, S.O. Usov, E.E. Zavarin, A.F. Tsatsul'nikov,Yu.G. Musikhin, A.S. Vlasov, and N.N. Ledentsov
Author Index 849
Subject Index 857
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PREFACE
This proceedings volume is a record of the submitted papers at Symposium FF, "GaN, A1N,InN and Related Materials," held November 28-December 2 at the 2005 MRS Fall Meeting inBoston, Massachusetts. The symposium consisted of nine half-day sessions (10 invited and89 contributed talks), and two poster sessions (131 posters total). Two of the sessions were jointsessions with Symposium EE, "Progress in Semiconductor Materials V—Novel Materials andElectronic and Optoelectronic Applications."
This continuation of the MRS symposium series on GaN and associated materials focused onadvances in basic and applied science. It also included a session on its recent competitor material ofZnO. Advances in materials and processing technology continue to enable rapid progress in theapplication of nitride semiconductors in high-frequency, high-power, high-temperature electronics,visible and ultraviolet light-emitting diodes and lasers, ultraviolet photodetectors, and otherdevices. Current and emerging research areas in this symposium included epitaxial growthstrategies for high In-composition InGaN alloys (in particular InN), AlInGaN alloys, achievinghigh p-doping levels in GaN, AlGaN, A1N and doping of InN, spintronics, developing large areaGaN and A1N substrates, controlling and understanding the influence of defects and polarization,heterojunctions to ZnO and light emitting ZnO structures, advances in materials and deviceprocessing, including etching, passivation, and materials/system integration, and novel devices andapplications of nitride materials.
It is with pleasure and optimism about the still thriving III-V nitride and related materials fieldthat we present these proceedings for publication by the Materials Research Society.
Martin KuballThomas H. MyersJoan M. RedwingTakashi Mukai
January 2006
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Cambridge University Press978-1-107-40886-9 - Materials Research Society Symposium Proceedings: Volume 892:GaN, AIN, InN and Related MaterialsEditors: Martin Kuball, Thomas H. Myers, Joan M. Redwing and Takashi MukaiFrontmatterMore information
MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS
Volume 862— Amorphous and Nanocrystalline Silicon Science and Technology—2005, R. Collins, P.C. Taylor,M. Kondo, R. Carius, R. Biswas, 2005, ISBN 1-55899-815-2
Volume 863— Materials, Technology and Reliability of Advanced Interconnects—2005, P.R. Besser,A.J. McKerrow, F. Iacopi, C.P. Wong, J. Vlassak, 2005, ISBN 1-55899-816-0
Volume 864— Semiconductor Defect Engineering—Materials, Synthetic Structures and Devices, S. Ashok,J. Chevallier, B.L. Sopori, M. Tabe, P. Kiesel, 2005, ISBN 1-55899-817-9
Volume 865— Thin-Film Compound Semiconductor Photovoltaics, W. Shafarman, T. Gessert, S. Niki,S. Siebentritt, 2005, ISBN 1-55899-818-7
Volume 866— Rare-Earth Doping for Optoelectronic Applications, T. Gregorkiewicz, Y. Fujiwara, M. Lipson,J.M. Zavada, 2005, ISBN 1-55899-819-5
Volume 867— Chemical-Mechanical Planarization—Integration, Technology and Reliability, A. Kumar, J.A. Lee,Y.S. Obeng, I. Vos, E.C. Jones, 2005, ISBN 1-55899-820-9
Volume 868E—Recent Advances in Superconductivity—Materials, Synthesis, Multiscale Characterization andFunctionally Layered Composite Conductors, T. Holesinger, T. Izumi, J.L. MacManus-Driscoll,D. Miller, W. Wong-Ng, 2005, ISBN 1-55899-822-5
Volume 869— Materials, Integration and Technology for Monolithic Instruments, J. Theil, T. Blalock, M. Boehm,D.S. Gardner, 2005, ISBN 1-55899-823-3
Volume 870E—Giant-Area Electronics on Nonconventional Substrates, M.S. Shur, P. Wilson, M. Stutzmann,2005, ISBN 1-55899-824-1
Volume 87IE— Organic Thin-Film Electronics, A.C. Arias, N. Tessler, L. Burgi, J.A. Emerson, 2005,ISBN 1-55899-825-X
Volume 872— Micro- and Nanosystems—Materials and Devices, D. LaVan, M. McNie, S. Prasad, C.S. Ozkan,2005, ISBN 1-55899-826-8
Volume 873E—Biological and Bio-Inspired Materials and Devices, K.H. Sandhage, S. Yang, T. Douglas,A.R. Parker, E. DiMasi, 2005, ISBN 1-55899-827-6
Volume 874— Structure and Mechanical Behavior of Biological Materials, P. Fratzl, W.J. Landis, R. Wang,F.H. Silver, 2005, ISBN 1-55899-828-4
Volume 875— Thin Films—Stresses and Mechanical Properties XI, T. Buchheit, R. Spolenak, K. Takashima,A. Minor, 2005, ISBN 1-55899-829-2
Volume 876E—Nanoporous and Nanostructured Materials for Catalysis, Sensor and Gas Separation Applications,S.W. Lu, H. Hahn, J. Weissmuller, J.L. Gole, 2005, ISBN 1-55899-830-6
Volume 877E—Magnetic Nanoparticles and Nanowires, D. Kumar, L. Kurihara, I.W. Boyd, G. Duscher,V. Harris, 2005, ISBN 1-55899-831-4
Volume 878E—Solvothermal Synthesis and Processing of Materials, S. Komarneni, M. Yoshimura, G. Demazeau,2005, ISBN 1-55899-832-2
Volume 879E—Chemistry of Nanomaterial Synthesis and Processing, X. Peng, X. Feng, J. Liu, Z. Ren,J.A. Voigt, 2005, ISBN 1-55899-833-0
Volume 880E—Mechanical Properties of Nanostructured Materials—Experiments and Modeling, J.G. Swadener,E. Lilleodden, S. Asif, D. Bahr, D. Weygand, 2005, ISBN 1-55899-834-9
Volume 88IE—Coupled Nonlinear Phenomena—Modeling and Simulation for Smart, Ferroic and MultiferroicMaterials, R.M. McMeeking, M. Kamlah, S. Seelecke, D. Viehland, 2005, ISBN 1-55899-835-7
Volume 882E—Linking Length Scales in the Mechanical Behavior of Materials, T.J. Balk, R.E. Rudd,N. Bernstein, W. Windl, 2005, ISBN 1-55899-836-5
Volume 883— Advanced Devices and Materials for Laser Remote Sensing, F. Amzajerdian, A.A. Dyrseth,D. Killinger, L. Merhari, 2005, ISBN 1-55899-837-3
Volume 884E—Materials and Technology for Hydrogen Storage and Generation, G-A. Nazri, C. Ping,R.C. Young, M. Nazri, J. Wang, 2005, ISBN 1-55899-838-1
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Cambridge University Press978-1-107-40886-9 - Materials Research Society Symposium Proceedings: Volume 892:GaN, AIN, InN and Related MaterialsEditors: Martin Kuball, Thomas H. Myers, Joan M. Redwing and Takashi MukaiFrontmatterMore information
MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS
Volume 885E—The Hydrogen Cycle—Generation, Storage and Fuel Cells, A. Dillon, C. Filiou, J. Ohi, C. Oik,2006, ISBN 1-55899-839-X
Volume 886— Materials and Technologies for Direct Thermal-to-Electric Energy Conversion, J. Yang,T.P. Hogan, R. Funahashi, G.S. Nolas, 2006, ISBN 1-55899-840-3
Volume 887— Degradation Processes in Nanostructured Materials, M. Chipara, O. Puglisi, R. Skomski, F. Jones,B.S. Hsiao, 2006, ISBN 1-55899-841-1
Volume 888— Materials and Devices for Smart Systems II, Y. Furuya, J. Su, I. Takeuchi, V.K. Varadan,J. Ulicny, 2006, ISBN 1-55899-842-X
Volume 889— Electroresponsive Polymers and Their Applications, V. Bharti, Y. Bar-Cohen, Z.-Y. Cheng,J. Madden, Q.M. Zhang, 2006, ISBN 1-55899-843-8
Volume 890— Surface Engineering for Manufacturing Applications, WJ. Meng, R. Maboudian, S.C. Chen,SJ. Bull, P.R. Chalker, 2006, ISBN 1-55899-844-6
Volume 891— Progress in Semiconductor Materials V—Novel Materials and Electronic and OptoelectronicApplications, LJ. Olafsen, R.M. Biefeld, M.C. Wanke, A.W. Saxler, 2006, ISBN 1-55899-845-4
Volume 892— GaN, A1N, InN and Related Materials, M. Kuball, J.M. Redwing, T.H. Myers, T. Mukai, 2006,ISBN 1-55899-846-2
Volume 893— Actinides 2005—Basic Science, Applications and Technology, J. Sarrao, A. Schwartz, M. Antonio,P. Burns, R. Haire, H. Nitsche, 2006, ISBN 1-55899-847-0
Volume 894— Combinatorial Methods and Informatics in Materials Science, Q. Wang, R.A. Potyrailo, M. Fasolka,T. Chikyow, U.S. Schubert, A. Korkin, 2006, ISBN 1-55899-848-9
Volume 895— Life-Cycle Analysis Tools for "Green" Materials and Process Selection, S. Papasawa, V. Fthenakis,2006, ISBN 1-55899-850-0
Volume 896— Multifunctional Energetic Materials, A. Gash, N. Thadhani, W. Wilson, R. Armstrong, Z. Munir,2006, ISBN 1-55899-851-9
Volume 897E—Biomimetic Polymers and Gels, N. Langrana, F. Horkay, B. Yurke, 2006, ISBN 1-55899-852-7Volume 898E—Mechanical Behavior of Biological and Biomimetic Materials, A.J. Bushby, V.L. Ferguson,
C.-C. Ko, M.L. Oyen, 2006, ISBN 1-55899-853-5Volume 899E—Dynamics in Small Confining Systems—2005, J.T. Fourkas, P. Levitz, R. Overney, M. Urbakh,
2006, ISBN 1-55899-854-3Volume 900E—Nanoparticles and Nanostructures in Sensors and Catalysis, C.-J. Zhong, N.A. Kotov, W. Daniell,
F.P. Zamborini, 2006, ISBN 1-55899-855-1Volume 901E—Assembly at the Nanoscale—Toward Functional Nanostructured Materials, C.S. Ozkan, F. Rosei,
G.P. Lopinski, Z.L. Wang, 2006, ISBN 1-55899-856-XVolume 902E—Ferroelectric Thin Films XIII, R. Ramesh, J.-P. Maria, M. Alexe, V. Joshi, 2006,
ISBN 1-55899-857-8Volume 903E—Amorphous and Nanocrystalline Metals for Structural Applications, E. Ma, C.A. Schuh, Y. Li,
M.K. Miller, 2006, ISBN 1-55899-858-6Volume 904E—Mechanisms of Mechanical Deformation in Brittle Materials, J.E. Bradby, S.O. Kucheyev,
E.A. Stach, M.V. Swain, 2006, ISBN 1-55899-859-4Volume 905E—Materials for Transparent Electronics, H. Ohta, D.C. Paine, J.D. Perkins. J. Tate, C.W. Ow Yang,
2006, ISBN 1-55899-860-8Volume 906E—Magnetic Sensors and Sensing Systems, J.-P. Wang, W.F. Egelhoff Jr., H. Brttckl, M. Tondra,
2006, ISBN 1-55899-861-6Volume 907E— In Situ Electron Microscopy of Materials, PJ. Ferreira, I.M. Robertson, G. Dehm, H. Saka, 2006,
ISBN 1-55899-862-4Volume 908E—Growth, Modification and Analysis by Ion Beams at the Nanoscale, J.K.N. Lindner, M. Toulemonde,
WJ. Weber, B.L. Doyle, 2006, ISBN 1-55899-863-2Volume 909E—Forum on Materials Science Education, T.R. Finlayson, F.M. Goodchild, M.G. Norton,
S.R.J. Oliver, 2006, ISBN 1-55899-864-0
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