gan and related alloys—2001 - cambridge university...

GaN and RelatedAlloys—2001

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Cambridge University Press978-1-107-41207-1 - Materials Research Society Symposium Proceedings: Volume 693: GaN and Related Alloys—2001Editors: John E. Northrup, Jörg Neugebauer, David C. Look, Shigefusa F. Chichibuand Henning RiechertFrontmatterMore information

http://www.cambridge.org/9781107412071

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MATERIALS RESEARCH SOCIETYSYMPOSIUM PROCEEDINGS VOLUME 693

GaN and RelatedAlloys—2001

Symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A.

EDITORS:

John E, NorthrupPalo Alto Research Center

Palo Alto, California, U.S.A.

Jorg NeugebauerFritz-Haber-Institut der Max-Planck-Gesellschaft

Berlin-Dahlem, Germany

David C. LookWright State UniversityDayton, Ohio, U.S.A.

Shigefusa F. ChichibuUniversity of Tsukuba

Ibaraki, Japan

Heiming RiechertInfineon Technologies

Munich, Germany

IM1RISIMaterials Research Society

Warrendale, Pennsylvania






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CONTENTS

Preface xxi

Materials Research Society Symposium Proceedings xxii

MOLECULAR BEAM EPITAXYAND GROWTH KINETICS

Impact of In Content on the Structural and Optical Properties of(In,Ga)N/GaN Multiple Quantum Wells Grown by Plasma-AssistedMolecular Beam Epitaxy 3

Patrick Waltereit and James S. Speck

Study of Interface Properties of InN and InN-Based Heterostructuresby Molecular Beam Epitaxy 9

Hai Lu, William J. Schaff, Lester F. Eastman, and Colin Wood

POINT DEFECTS AND DOPING

Optical Properties of Carbon Doped Cubic GaN EpilayersGrown on GaAs (001) Substrate by Molecular Beam Epitaxy 17

DJ. As, U. Kohler, and K. Lischka

Vibrational Spectroscopy of GaN:Mg Under Pressure 23M.D. McCluskey, K.K. Zhuravlev, M. Kneissl, W. Wong, D. Treat,S. Limpijumnong, C.G. Van de Walle, and N.M. Johnson

Novel Configuration of Mg-H Complexes in GaN 29Sukit Limpijumnong, John E. Northrup, and Chris G. Van de Walle

Photoluminescence of Zn-Doped GaN Grown by HVPE 35M.A. Reshchikov, D. Huang, H. Morkoc, and RJ. Molnar

Raman Studies on Oxygen Doped GaN Grown by MolecularBeam Epitaxy ~....41

D. Papadimitriou, A.J. Ptak, D. Korakakis, N.C. Giles, andT.H. Myers

POSTER SESSION

GaNxAsi_x Growth by Molecular Beam Epitaxy WithDispersive Nitrogen 49

S.Z. Wang, S.F. Yoon, T.K. Ng, W.K. Loke, and W.J. Fan

v






Growth of Carbon-Nitrogen Films With a Broad Beam RF IonSource 55

David C. Ingram, William C. Lanter, Charles A. DeJoseph,and Asghar Kayani

Effect of Excimer Laser Annealing on Optical Properties ofGaN Films Deposited by RF Magnetron Sputtering 61

Man Young Sung, Woong-Je Sung, Yong-Il Lee, Chun-Il Park,Woo-Beom Choi, and Sangsig Kim

Surface Instability and Associated Roughness of Pendeo-EpitaxyGaN (0001) Films Grown Via Metalorganic Vapor Phase Epitaxy 67

Amy M. Roskowski, Peter Q. Miraglia, Edward A. Preble,Sven Einfeldt, and Robert F. Davis

Three-Dimensional Modeling of the High PressureOrganometallic Chemical Vapor Deposition of InN UsingTrimethylindium and Ammonia 73

Sonya D. McCall and Klaus J. Bachmann

Layer by Layer Growth of GaN Films by Low TemperatureCyclic Process 81

P. Sanguino, S. Koynov, M. Niehus, L.V. Melo, R. Schwarz,H. Alves, and B.K. Meyer

High Efficiency UV-Emission at 345 nm from InAlGaNLight-Emitting Diodes 87

A. Kinoshita, H. Hirayama, M. Ainoya, T. Yamabi, A. Hirata,and Y. Aoyagi

Structural and Optical Characteristics of Laterally OvergrownGaN Pyramids on (111) Si Substrate 93

Yong-Hoon Cho, H.M. Kim, T.W. Kang, JJ. Song, and W. Yang

Apriori Process-Property Relationships of GaN EpitaxialGrowth in Ga/N/H/C/O Systems 99

Constantine Loukeris, Shumaila Khan, and Christos G. Takoudis

Growth of GaN Epilayers on Si(lll) Substrates Using MultipleBuffer Layers 105

P.R. Hageman, S. Haffouz, A. Grzegorczk, V. Kirilyuk, andP.K. Larsen

Double Pendeo-Epitaxial Growth of GaN Films With LowDensity of Threading Dislocation I l l

Y.K. Hong, H.S. Jung, C-H. Hong, M.H. Kim, and S-J. Leem

VI






V-HI Ratio Effect on Cubic GaN Grown by RF PlasmaAssisted Gas Source MBE 117

Li-Wei Sung, Hao-Hsiung Lin, and Chih-Ta Chia

Microstructure of ELO-GaN Layers Grown by Hydride VaporPhase Epitaxy ~ —123

Silvija Gradecak, Volker Wagner, Marc Ilegems,Fabienne Bobard, and Pierre Stadelmann

Quantitative Defect Analysis of GaN Thick Films by TEM and AFM 129Praveena Bhaskara, Changmo Sung, David Bliss, andMichael Suscavage

Effect of Additional HC1 on the Surface Morphology of HighQuality GaN on Sapphire by HVPE 135

X.Q. Xiu, R. Zhang, D.Q. Lu, L. Gu, B. Shen, Y. Shi, andY.D. Zheng

White Beam Synchrotron X-ray Topography and X-rayDiffraction Measurements of Epitaxial Lateral Overgrowth ofGaN 141

W.M. Chen, PJ. McNally, K. Jacobs, T. Tuomi, A.N. Danilewsky,D. Lowney, J. Kanatharana, L. Knuuttila, and J. Riikonen

Growth of GaN:Sb MBE-Layers 147P. Cristea, D.G. Ebling, and K.W. Benz

Band-Gap Engineering in Amorphous/Microcrystalline ScxGai_xN 153M.E. Little and M.E. Kordesch

Growth of Gallium Nitride Textured Films and Nanowires onPolycrystalline Substrates at sub-Atmospheric Pressures 159

Hari Chandrasekaran and Mahendra K. Sunkara

Microstructural Characterization of GaN-GaAs Alloys Grownon (001) GaAs by Molecular Beam Epitaxy 165

Hyonju Kim, T.G. Andersson, U. Sodervall, C. Jager, W. Jager,M. Albrecht, G. Bosker, and N.A. Stolwijk

Layer Thickness Dependence of Strain in GaN Grown by HVPE 171Gyu Gwang Sim, P.W. Yu, D.C. Reynolds, D.C. Look,Sang Soo Kim, and D.Y. Noh

vn






Effect of High Temperature Single and Multiple A1NIntermediate Layers on N-Polar and Ga-Polar GaN Grown byMolecular Beam Epitaxy 177

F. Fedler, J. Stemmer, RJ. Hauenstein, T. Rotter, A.M. Sanchez,A. Ponce, S.I. Molina, D. Mistele, H. Klausing, O. Semchinova,J. Aderhold, and J. Graul

Characterization of G-R Noise in GaN Films Grown by RF-MBEon Intermediate-Temperature Buffer Layers 183

W.K. Fong, B.H. Leung, C.F. Zhu, and Charles Surya

Structural Properties of GaN Films Grown by Molecular BeamEpitaxy on Vicinal SiC(OOOl) 189

CD. Lee, R.M. Feenstra, O. Shigiltchoff, R.P. Devaty, andWJ. Choyke

Two Step Growth of InN Films on Sapphire (0001) SubstratesWithout Nitridation Process by RF-MBE 195

Tomohiro Yamaguchi, Yoshiki Saito, Kenji Kano,Tomo Muramatsu, Tsutomu Araki, Yasushi Nanishi,Nobuaki Teraguchi, and Akira Suzuki

Investigation of the Optimum Growth Conditions of Wide-BandgapQuaternary InAlGaN for UV-LEDs 201

T. Yamabi, A. Kinoshita, H. Hirayama, M. Ainoya, A. Hirata,T. Araki, Y. Nanishi, and Y. Aoyagi

Optical and Structural Properties of Mn-Implanted GaN Films 207J. Xu, J. Li, R. Zhang, X.Q. Xiu, D.Q. Lu, S.L. Gu, B. Shen,Y. Shi, and Y.D. Zheng

Electroluminescence and Photoluminescence Studies of aNitride-Rich GaNj_xPx SQW Structure LED Grown ByLaser-Assisted Metal-Organic Chemical Vapor Deposition 213

Junjiroh Kikawa, Seikoh Yoshida, and Yoshiteru Itoh

New Buffer Layer Technique Using Underlying Epitaxial A1NFilms for High-Quality GaN Growth 219

Tomohiko Shibata, Yoshihiro Kida, Hideto Miyake,Kazumasa Hiramatsu, Keiichiro Asai, Teruyo Nagai,Shigeaki Sumiya, Mitsuhiro Tanaka, and Osamu Oda

Synthesis of Oxygen-Free Nanosized InN by Pulse Discharge 225Wei-Dong Yang, K.W. Cheah, Pei-Nan Wang, and Fu-Ming Li

vni






Removal of 6H-SiC Substrate Influence When Evaluating GaNThin Film Properties Via X-ray 233

Edward A. Preble, Peter Q. Miraglia, Amy M. Roskowski,Sven Einfeldt, and Robert F. Davis

Formation of GaN Self-Organized Nanotips by NanomaskingEffect 239

Harumasa Yoshida, Tatsuhiro Urushido, Hideto Miyake, andKazumasa Hiramatsu

Lateral Growth of InN on GaN/Sapphire 245Fuh-Hsiang Yang, Jih-Hsien Hwang, Kuei-Hsien Chen,Ying-Jay Yang

Micro-Raman Scattering From Hexagonal GaN, A1N, andAlxGai_xN Grown on (111) Oriented Silicon: Stress Mapping ofCracks 251

C. Ramkumar, T. Prokofyeva, M. Seon, M. Holtz, K. Choi, J. Yun,S.A. Nikishin, and H. Temkin

LIGHT EMITTERS

* 400-nm Band AlGalnN-Based High Power Laser Diodes 259Takeharu Asano, Motonobu Takeya, Tsuyoshi Tojyo,Shinro Ikeda, Takashi Mizuno, Shinichi Ansai, Shu Goto,Satoru Kijima, Tomonori Hino, Shiro Uchida, andMasao Ikeda

Defects Created by 25 keV Hydrogen Implantation in it-Type GaN 271F.D. Auret, W.E. Meyer, H.A. van Laarhoven, S.A. Goodman,M.J. Legodi, B. Beaumont, and P. Gibart

Quaternary AlInGaN MQWs for Ultraviolet LEDs 277J.P. Zhang, J.W. Yang, V. Adivarahan, H.M. Wang, Q. Fareed,E. Kuokstis, A. Chitnis, M. Shatalov, G. Simin, M. Asif Khan,R. Gaska, and M.S. Shur

Composition Control During Growth of AlGaN CladdingLayers for InGaN-MQW Lasers With Ridge Formed bySelective Re-growth (RiS-type Lasers) 283

Akitaka Kimura, Masaru Kuramoto, and A. Atsushi Yamaguchi

* Invited Paper

IX






Light Emitters Fabricated on Bulk GaN Substrates: Challengesand Achievements 289

Piotr Perlin, M. Leszczynski, P. Prystawko, R. Czernecki,G. Nowak, P. Wisniewski, L. Dmowski, H. Teisseyre,E. Litwin-Staszewska, T. Suski, I. Grzegory, S. Porowski,V.Yu. Ivanov, M. Godlewski, J. Hoist, and A. Hoffman

Fabrication of p-n Junction with Mg-Doped Wide BandgapInAlGaN for Application to UV Emitters 295

H. Hirayama, T. Yamanaka, A. Kinoshita, K. Hiraoka,A. Hirata, and Y. Aoyagi

NITRIDE ALLOYS ANDLATERAL EPITAXY

Raman Studies of GaNP Alloy 303LA. Buyanova, W.M. Chen, E.M. Goldys, H.P. Xin, andC.W. Tu

Superior Structural Quality of Newly Developed GaNPendeo-Epitaxial Layers 309

Z. Liliental-Weber, J. Jasinski, D. Cherns, M. Baines, andR. Davis

POSTER SESSION

Study of High Nitrogen Compositions GaNAs and GalnNAsMaterial Quality by X-ray Diffraction and Photoluminescence 317

T.K. Ng, S.F. Yoon, S.Z. Wang, W.K. Loke, and WJ. Fan

Improvements of Structural and Optical Properties ofGaN/Al<uoGao.9N Multi-Quantum Wells by IsoelectronicIn-Doping 323

Lianshan Wang, Soo Jin Chua, and Wenhong Sun

Infrared and Ultraviolet Raman Spectra of A1N Thin FilmsGrownonSi(lll) 329

V.M. Naik, D. Haddad, Y.V. Danylyuk, R. Naik, G.W. Auner,L. Rimai, W.H. Weber, and D. Uy






Electrical Properties of n-GaN/p-SiC and n-AlGaN/p-SiCHeteroj unction Diodes 335

B. Luo, J. Kim, R. Mehandru, F. Ren, K.P. Lee, S.J. Pearton,A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, E.A. Kozhukhova,A.V. Osinsky, and P.E. Norris

High Mobility Nitrides 341K. Scott A. Butcher, Marie Wintrebert-Fouquet, Patrick P.-T. Chen,Trevor L. Tansley, and Surapon Srikeaw

Compositional and Structural Studies of Amorphous GaNGrown by Ion-Assisted Deposition 347

U.D. Lanke, A. Koo, BJ. Ruck, H.K. Lee, A. Markwitz,V.J. Kennedy, M.J. Ariza, D.J. Jones, J. Roziere, A. Bittar,and H.J. Trodahl

Characterization of AlxGai_xN/AlyGai_yN Distributed BraggReflectors Grown by Plasma Assisted Molecular Beam Epitaxy 353

H. Klausing, F. Fedler, T. Rotter, D. Mistele, O. Semchinova,J. Stemmer, J. Aderhold, and J. Graul

Influence of Substrate Orientation on Photoluminescence inInGaN/GaN Multiple Quantum Wells 359

P. Chen, SJ. Chua, and W. Wang

Photoluminescence Study of Deep-Level Defects in Undoped GaN 365M.A. Reshchikov, H. Morkoc, S.S. Park, and K.Y. Lee

Luminescent Characteristics of InGaAsP/InP MultipleQuantum Well Structures by Impurity-Free VacancyDisordering 371

J. Zhao, X.D. Zhang, Z.C. Feng, J.C. Deng, P. Jin, Y.C. Wang,and G. Xu

Influence of Growth Temperature on Emission Efficiency ofInGaN/GaN Multiple Quantum Wells 377

Fei Chen, A.N. Cartwright, Paul M. Sweeney, M.C. Cheung,Jeffrey S. Flynn, and David Keogh

Excitons Bound to Structural Defects in GaN 383M.A. Reshchikov, D. Huang, F. Yun, H. Morkoc,RJ. Molnar, and C.W. Litton

Nanobumps in InxAli_xN/AlN/Sapphire System: A New Kind ofQuantum Dots? 389

Yuri Danylyuk, Dmitri Romanov, and Gregory Auner

XI






Optical Absorption of Nitrogen Vacancy in Proton IrradiatedAlxGax_xN Thin Films 395

Qiaoying Zhou, M.O. Manasreh, M. Pophristic, Ian T. Ferguson,and B.D. Weaver

Effect of the Inter-Subband Scattering in Modulation-DopedAlxGai_xN/GaN Heterostructures .....401

Z.W. Zheng, B. Shen, C.P. Jiang, S.L. Guo, J. Liu, H.M. Zhou,R. Zhang, Y. Shi, Y.D. Zheng, G.Z. Zheng, J.H. Chu, T. Someya,and Y. Arakawa

Electrical and Optical Studies of Si-Implanted GaN 407James A. Fellows, Yung Kee Yeo, Robert L. Hengehold, andLeonid Krasnobaev

Preparation of ZnAl2O4/a-Al2O3 Complex Substrates andGrowth of GaN Films 413

Z.X. Bi, R. Zhang, W.P. Li, X.S. Wang, S.L. Gu, B. Shen,Y. Shi, Z.G. Liu, and Y.D. Zheng

Interface Roughness, Localization and Radiative Efficiency inInGaN/GaN Light Emitters 419

Madhusudan Singh and Jasprit Singh

Application of Amorphous GaN for Electroluminescence Device 425Tohru Honda and Hideo Kawanishi

Optical Properties of Cubic AlGaN 431Stephane Fanget, Catherine Bru-Chevallier, Gerard Guillot,Esteban Martinez-Guerrero, Denis Jalabert, Bruno Daudin,Henri Mariette, Le Si Dang, Gabriel Ferro, and Yves Monteil

Electron Transport in A1N Under High Electric Fields 437Ramon Collazo, Raoul Schlesser, Amy Roskowski, Robert F. Davis,and Z. Sitar

Thermal Desorption of Deuterium From GaN(OOOl) 443Y. Yang, J. Lee, B.D. Thorns, D.D. Koleske, and R.L. Henry

AlGaN/GaN Based MOSHFETs With Different GateDielectrics and Treatments 449

D. Mistele, T. Rotter, Z. Bougrioua, I. Moermann,K.S. Rover, M. Seyboth, V. Schwegler, J. Stemmer,F. Fedler, H. Klausing, O.K. Semchinova, J. Aderhold, andJ. Graul

xn






Characteristics of Deep Traps in Freestanding GaN 455Z-Q. Fang, D.C. Look, P. Visconti, C. Lu, D. Wang,H. Morkoc, S.S. Park, and K.Y. Lee

QUANTUM WELLS

* Light Emission From Quantum-Dot-Like Structures in CubicGaN/InGaN/GaN Double Heterostructures and Quantum Wells 463

K. Lischka

Electron and Hole Cofinement in GalnN/GaN and AlGaN/GaNQuantum Wells 473

A. Hangleiter, S. Lahmann, C. Netzel, U. Rossow, P.R.C. Kent,and A. Zunger

Similarities in the Optical Properties of Hexagonal and CubicInGaN Quantum Wells 481

S.F. Chichibu, M. Sugiyama, T. Onuma, T. Kuroda, A. Tackeuchi,T. Sota, T. Kitamura, H. Nakanishi, Y. Ishida, H. Okumura,S. Keller, U.K. Mishra, S.P. DenBaars, and S. Nakamura

* Piezoelectric Field and Its Influence on the Pressure Behaviorof the Light Emission From InGaN/GaN and GaN/AlGaNQuantum Wells 487

T. Suski, P. Perlin, S.P. Lepkowski, H. Teisseyre, I. Gorczyca,P. Prystawko, M. Leszczynski, N. Grandjean, J. Massies,T. Kitamura, Y. Ishida, S.F. Chichibu, and H. Okumura

Photoluminescence of Excitons in n-Type Ino.nGao.89N/Ino.o1Gao.99NMultiple Quantum Wells 501

B. Monemar, P.P. Paskov, J.P. Bergman, G. Pozina,S. Kamiyama, M. I way a, H. Amano, and I. Akasaki

TRANSPORT AND OPTICALPROPERTIES

Determination and Critical Assessment of the Optical Properties ofCommon Substrate Materials Used in III-V Nitride HeterostructuresWith Vacuum Ultraviolet Spectroscopic Ellipsometry 509

N.V. Edwards, O.P.A. Lindquist, L.D. Madsen, S. Zollner,K. Jarrehdahl, C. Cobet, S. Peters, N. Esser, A. Konkar, andD.E. Aspnes

* Invited Paper

xin






Exciton Spectra of A1N Epitaxial Films 515T. Onuma, S.F. Chichibu, T. Sota, K. Asai, S. Sumiya, T. Shibata,and M. Tanaka

Intersubband Optical Absorption and Electron RelaxationRates in GaN/AlGaN Coupled Double Quantum Wells 521

J.D. Heber, C. Gmachl, H.M. Ng, A.Y. Cho, and S.-N.G. Chu

Polarization Effects in the Photoluminescence of AlGaN andAlInGaN Based Quantum Well Structures 527

Mee-Yi Ryu, E. Kuokstis, C.Q. Chen, J.P. Zhang, J.W. Yang,G. Simin, and M. Asif Khan

Magneto-Spectroscopy of Two-Electron Transitions inHomoepitaxial GaN 533

M. Wojdak, J.M. Baranowski, A. Wysmolek, K. Pakula,R. Stepniewski, M. Potemski, I. Grzegory, and S. Porowski

VAPOR PHASE EPITAXY

Characterization of High-Quality Epitaxial A1N Films GrownbyMOVPE 541

Tomohiko Shibata, Keiichiro Asai, Teruyo Nagai,Shigeaki Sumiya, Mitsuhiro Tanaka, Osamu Oda,Hideto Miyake, and Kazumasa Hiramatsu

Growth of A1N Bulk Crystals From the Vapor Phase 545Raoul Schlesser, Rafael Dalmau, Rositza Yakimova, andZlatko Sitar

Crystalline and Electrical Properties of AlInN/GaN andAIN/GaN Superlattices on GaN Grown by Metalorganic VaporPhase Epitaxy 553

Shigeo Yamaguchi, Yasuo Iwamura, Masayoshi Kosaki,Yasuhiro Watanabe, Shingo Mochizuki, Tetsuya Nakamura,Yohei Yukawa, Shugo Nitta, Satoshi Kamiyama, Hiroshi Amano,and Isamu Akasaki

In Situ RHEED Observation of MOCVD-GaN Film Growth 559Masatomo Sumiya, Noritaka Ogusu, Kouhei Osada, andShunro Fuke

xiv






Helical-Type Surface Defects in GaN and InGaN Thin FilmsEpitaxially Grown on GaN Templates at ReducedTemperatures ~..565

Peter Miraglia, Edward Preble, Amy Roskowski, Sven Einfeldt,Robert F. Davis, Sung Hwam Lim, and Zuzzana Liliental-Weber

Measurement of the Effective Piezoelectric Constant of NitrideThin Films and Heterostructures Using Scanning ForceMicroscopy 571

B.J. Rodriguez, D-J. Kim, A.I. Kingon, and R.J. Nemanich

Measurements of the Band Offset of SiO2 on Clean GaN 577E.H. Hurt, Ted E. Cook Jr., K.M. Tracy, R.F. Davis,G. Lucovsky, and R.J. Nemanich

EXTENDED DEFECTS

* Theory of Electron Energy Loss Spectroscopy and ItsApplication to Threading Edge Dislocations in GaN 585

C.J. Fall, R. Jones, P.R. Briddon, A.T. Blumenau,T. Frauenheim, and M.I. Heggie

Profiling Electric Fields Around Dislocations in GaN 597D. Cherns, C.G. Jiao, and H. Mokhtari

Optical Properties of GaN With Ga and N Polarity 603M.A. Reshchikov, D. Huang, F. Yun, P. Visconti, T. King,H. Morkoc, J. Jasinski, and Z. Liliental-Weber

High-Temperature Hardness of Bulk Single-Crystal A1N 609Ichiro Yonenaga, Andrey Nikolaev, Yuriy Melnik, andVladimir Dmitriev

Mg Related Defect Formation During MOVPE Growth of GaNBased Films Studied by Transmission Electron Microscopy 615

Roland Kroger, Stephan Figge, Tim Bottcher, Peter L. Ryder,and Detlef Hommel

Conductivity, Photoconductivity and Optical Properties ofAmorphous GaN Films 621

A. Koo, U.D. Lanke, B.J. Ruck, S.A. Brown, R. Reeves,I. Liem, A. Bittar, and H.J. Trodahl

•Invited Paper

xv






POSTER SESSION

Passive Components on A1N for Application in AlGaN/GaNPower Amplifiers 629

B. Jacobs, B. van Straaten, M. Kramer, F. Karouta, P. De Hek,E. Suijker, and R. Van Dijk

Production Scale Growth of AlGaN/GaN Field Effect Transistors ..635David Gotthold, Shawn Gibb, Boris Peres, Ian Ferguson,Chris Palmer, and Eric Armour

Reverse-Annealing Phenomenon During the High-TemperatureImplantation of Ar+ Into GaN 641

Igor O. Usov, Nalin R. Parikh, Darren Thomson, andRobert F. Davis

Evaluation of (In,Ga)N Films as Optical Absorption Filtersfor Application in Integrated Fluorescence DetectionMicro-Bioanalytical Systems 647

J. Alex Chediak, Michael Kneissl, and Timothy D. Sands

Electrical Properties of GaN/InGaN MQW HeterojunctionDiodes as Affected by Various Plasma Treatments 653

J. Kim, B. Luo, R. Mehandru, F. Ren, K.P. Lee, S.J. Pearton,A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, A.V. Osinsky,and P.E. Norris

Electrical Properties of n-GaN/p-SiC and n-AlGaN/p-SiCHeteroj unction Diodes 659

B. Luo, J. Kim, R. Mehandru, F. Ren, K.P. Lee, S.J. Pearton,A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, E.A. Kozhukhova,A.V. Osinsky, and P.E. Norris

Growth of High Al Concentration AlGaN for Solar BlindPhotodetector Applications 665

Shiping Guo, Milan Pophristic, Ian Ferguson, Boris Peres,Phil Lamarre, Steve Tobin, Kwok Wong, Marion Reine, andAshok Sood

High Efficiency UV-Emission at 345 nm from InAlGaNLight-Emitting Diodes 671

A. Kinoshita, H. Hirayama, M. Ainoya, T. Yamabi,A. Hirata, and Y. Aoyagi

Electric Field Induced Heating and Energy Relaxation in GaN 677T.A. Eckhause, O. Siizer, £. Kurdak, F. Yun, and H. Morkoc

xvi






Current Spreading in AlGaN:Mg Cladding Layers of LaserStructures 683

Stephan Figge, Tim Bottcher, Christoph Zellweger,Marc Ilegems, and Detlef Hommel

Palladium and Aluminum Gate Metals/AluminumNitride/Silicon Balanced Capacitors for Selective HydrogenSensing 687

H.E. Prakasam, F. Serina, C. Huang, G.W. Auner,L. Rimai, S. Ng, and R. Naik

Effect of Ge in Cl2 Plasma for Reactive Ion Etching of GaN 693Tatsuhiro Urushido, Harumasa Yoshida, Hideto Miyake, andKazumasa Hiramatsu

Electrical Characterization of GaN Metal OxideSemiconductor Diodes Using MgO as the Gate Oxide 699

J. Kim, B.P. Gila, R. Mehandru, J.W. Johnson, J.H. Shin,K.P. Lee, B. Luo, A. Onstine, C.R. Abernathy, S.J. Pearton,and F. Ren

Proton Irradiation Effects on Scandium Oxide/Gallium NitrideMOS Diodes 713

K. Allums, B. Luo, R. Mehandru, B.P. Gila, R. Dwivedi,T.N. Fogarty, R. Wilkins, C.R. Abernathy, F. Ren, andS.J. Pearton

Low-Resistance Electrical Contacts to p-Type GaN by UsingInxGai_xN Cap Layers 719

Th. Gessmann, Y.-L. Li, J.W. Graff, E.F. Schubert, andJ.K. Sheu

Fast Proton Damage Effects on the Luminescence Properties ofHigh-Quality GaN 725

Qing Yang, Henning Feick, Rob Armitage, and Eicke R. Weber

Tailorable Rectification: A Study of Vertical Transport inAlGaN/GaN Heterostructures 731

Madhusudan Singh, Jasprit Singh, and Umesh Mishra

Chemical, Electrical, and Structural Properties of Au/PdContacts on Chemical Vapor Cleaned p-type GaN Surfaces .737

P.J. Hartlieb, A. Roskowski, B.J. Rodriguez, R.J. Nemanich,and R.F. Davis

xvn






Fabrication and Investigation of the Metal-Ferroelectric-Semiconductor Structure With Pb(Zro.53Ti©.47)03 on AlxGai_xN/GaNHeterostructures 743

B. Shen, W.P. Li, X.S. Wang, F. Yan, R. Zhang, Z.X. Bi,Y. Shi, Z.G. Liu, Y.D. Zheng, T. Someya, and Y. Arakawa

Extraction of Polarization-Induced Charge Density inModulation-Doped AlxGai_xN/GaN Heterostructures Based onSchottkyC-K Simulation 749

Y.G. Zhou, B. Shen, H.Q. Yu, J. Liu, H.M. Zhou, R. Zhang,Y. Shi, Y.D. Zheng, T. Someya, and Y. Arakawa

TEM Assessment of GaN/AlGaN/TiAlTiAu andGaN/AlGaN/TiAlPdAu Ohmic Contacts 755

M.W. Fay, G. Moldovan, I. Harrison, J.C. Birbeck,B.T. Hughes, M.J. Uren, T. Martin, and P.D. Brown

Effects of the Schottky Electrode Structure in GaN BasedUV-VUV (50-360 nm) Photodetector 761

Atsushi Motogaito, Keiichi Ohta, Kazumasa Hiramatsu,Youichiro Ohuchi, Kazuyuki Tadatomo, Yutaka Hamamura,and Kazutoshi Fukui

Electrical Characterization of GaN Metal OxideSemiconductor Diode Using Sc2O3 as the Gate Oxide 767

R. Mehandru, B.P. Gila, J. Kim, J.W. Johnson, K.P. Lee, B. Luo,A.H. Onstine, C.R. Abernathy, S.J. Pearton, and F. Ren

Band Gap Shift of GaN Under Uniaxial Strain Compression 773H.Y. Peng, M.D. McCluskey, Y.M. Gupta, M. Kneissl, andN.M. Johnson

ELECTRONIC DEVICES

* Novel Sensor Applications of Group-Ill Nitrides 781M. Eickhoff, O. Ambacher, G. Steinhoff, J. Schalwig,R. Neuberger, T. Palacios, E. Monroy, F. Calle, G. Miiller,and M. Stutzmann

High Common-Emitter Current Gains Obtained by pnp GaNBipolar Junction Transistors 793

Kazuhide Kumakura, Toshiki Makimoto, and Naoki Kobayashi

•Invited Paper

xvni






Self-Heating Effects in High-Power AlGaN/GaN HFETs 799M. Kuball, M.J. Uren, J.M. Hayes, T. Martin, J.C.H. Birbeck,R.S. Balmer, and B.T. Hughes

A High-Power AlGaN/GaN Hetero Field-Effect Transistor 805Seikoh Yoshida and Hirotatsu Ishii

Back-Doping Design in AlGaN/GaN Heterostructure Field-EffectTransistors for High-Power Applications 811

Narihiko Maeda, Kotaro Tsubaki, Tadashi Saitoh, andNaoki Kobayashi

High Quantum Efficiency AlGaN/GaN Solar-BlindPhotodetectors Grown by Metalorganic Chemical VaporDeposition 817

U. Chowdhury, M.M. Wong, CJ. Collins, B. Yang,T.G. Zhu, A.L. Beck, J.C. Campbell, and R.D. Dupuis

Improved Mobilities and Resistivities in Modulation-DopedP-type AlGaN/GaN Superlattices 823

Erik L. Waldron, John W. Graff, E. Fred Schubert, andAmir M. Dabiran

PROCESSING

Transparent ZnO-Based Ohmic Contact to p-GaN 831E. Kaminska, A. Piotrowska, K. Golaszewska, M. Guziewicz,R. Kruszka, A. Kudla, T. Ochalski, A. Barcz, T. Dietl,F. Matsukura, M. Sawicki, A. Wawro, M. Zielinski,J. Jasinski, and Z. Liliental-Weber

Low Resistance Non-Transparent Ohmic Pt-contacts on p-GaN 837Andreas Weimar, Stefan Bader, Georg Bruderl, Volker Kummler,Alfred Lell, and Volker Harle

X-ray Photoemission Determination of the Surface FermiLevel Motion and Pinning on n- and p-GaN During theFormation of Au, Ni, and Ti Metal Contacts 843

Kimberly A. Rickert, Jong Kyu Kim, Jong-Lam Lee,Franz J. Himpsel, Arthur B. Ellis, and T.F. Kuech

Author Index 849

Subject Index 857

xix






PREFACE

This volume contains the proceedings of Symposium I, "GaN and Related Alloys—2001,"held November 26-30, at the 2001 MRS Fall Meeting in Boston, Massachusetts. Thesymposium consisted of 10 half-day sessions (13 invited and 75 contributed talks), and threeposter sessions (150 posters total).

This continuation of the MRS symposium series on GaN and related alloys focused onthree main topics: (i) advances in basic science, (ii) growth and growth related issues, and(iii) devices. In all three topics significant progress has been reported. In the basic science partthe focus was on point defects, dislocations, doping, the properties of nitride alloys with aspecial emphasis on localization phenomena and GaAsN alloys (which are very promising forlong-wavelength emitters), transport and optical properties. Significant advances have alsobeen made in understanding/improving all major nitride growth techniques (MBE, MOCVD,HVPE). Techniques such as ELOG and the development of bulk-like substrates are receivingattention as methods to reduce the number of dislocations. Last, but not least, tremendousprogress has been reported in device design and optimization, and also in understanding deviceprocessing issues such as p-contacts, laser lift-off, and etching. New and promising applicationsfor this materials system (e.g. as chemical and biological active sensors) have been suggested.

John E. NorthrupJorg NeugebauerDavid C. LookShigefusa F. ChichibuHenning Riechert






MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS

Volume 664— Amorphous and Heterogeneous Silicon-Based Films—2001, M. Stutzmann, J.B. Boyce,J.D. Cohen, R.W. Collins, J. Hanna, 2001, ISBN: 1-55899-600-1

Volume 665— Electronic, Optical and Optoelectronic Polymers and Oligomers, G.E. Jabbour, B. Meijer,N.S. Sariciftci, T.M. Swager, 2002, ISBN: 1 -55899-601-X

Volume 666— Transport and Microstructural Phenomena in Oxide Electronics, D.S. Ginley, M.E. Hawley,D.C. Paine, D.H. Blank, S.K. Streiffer, 2001, ISBN: 1-55899-602-8

Volume 667— Luminescence and Luminescent Materials, K.C. Mishra, J. McKittrick, B. DiBartolo,A. Srivastava, P.C. Schmidt, 2001, ISBN: 1-55899-603-6

Volume 668— II-VI Compound Semiconductor Photovoltaic Materials, R. Noufi, R.W. Birkmire, D. Lincot,H.W. Schock, 2001, ISBN: 1-55899-604-4

Volume 669— Si Front-End Processing—Physics and Technology of Dopant-Defect Interactions III, M. A. Foad,J. Matsuo, P. Stolk, M.D. Giles, K.S. Jones, 2001, ISBN: 1-55899-605-2

Volume 670— Gate Stack and Silicide Issues in Silicon Processing II, S.A. Campbell, C.C. Hobbs, L. Clevenger,P. Griffin, 2002, ISBN: 1-55899-606-0

Volume 671— Chemical-Mechanical Polishing 2001—Advances and Future Challenges, S.V. Babu, K.C. Cadien,J.G. Ryan, H. Yano, 2001, ISBN: 1-55899-607-9

Volume 672— Mechanisms of Surface and Microstrucure Evolution in Deposited Films and Film Structures,J. Sanchez, Jr., J.G. Amar, R. Murty, G. Gilmer, 2001, ISBN: 1-55899-608-7

Volume 673— Dislocations and Deformation Mechanisms in Thin Films and Small Structures, O. Kraft,K. Schwarz, S.P. Baker, B. Freund, R. Hull, 2001, ISBN: 1-55899-609-5

Volume 674— Applications of Ferromagnetic and Optical Materials, Storage and Magnetoelectronics, W.C. Black,H.J. Borg, K. Bussmann, L. Hesselink, S.A. Majetich, E.S. Murdock, B.J.H. Stadler, M. Vazquez,M. Wuttig, J.Q. Xiao, 2001, ISBN: 1-55899-610-9

Volume 675— Nanotubes, Fullerenes, Nanostructured and Disordered Carbon, J. Robertson, T.A. Friedmann,D.B. Geohegan, D.E. Luzzi, R.S. Ruoff, 2001, ISBN: 1-55899-611-7

Volume 676— Synthesis, Functional Properties and Applications of Nanostructures, H.W. Hahn, D.L. Feldheim,C.P. Kubiak, R. Tannenbaum, R.W. Siegel, 2002, ISBN: 1-55899-612-5

Volume 677— Advances in Materials Theory and Modeling—Bridging Over Multiple-Length and Time Scales,L. Colombo, V. Bulatov, F. Cleri, L. Lewis, N. Mousseau, 2001, ISBN: 1-55899-613-3

Volume 678— Applications of Synchrotron Radiation Techniques to Materials Science VI, P.G. Allen, S.M. Mini,D.L. Perry, S.R. Stock, 2001, ISBN: 1-55899-614-1

Volume 679E—Molecular and Biomolecular Electronics, A. Christou, E.A. Chandross, W.M. Tolles, S. Tolbert,2001, ISBN: 1-55899-615-X

Volume 680E—Wide-Bandgap Electronics, T.E. Kazior, P. Parikh, C. Nguyen, E.T. Yu, 2001,ISBN: 1-55899-616-8

Volume 68IE—Wafer Bonding and Thinning Techniques for Materials Integration, T.E. Haynes, U.M. Gosele,M. Nastasi, T. Yonehara, 2001, ISBN: 1-55899-617-6

Volume 682E—Microelectronics and Microsystems Packaging, J.C. Boudreaux, R.H. Dauskardt, H.R. Last,F.P. McCluskey, 2001, ISBN: 1-55899-618-4

Volume 683E—Material Instabilities and Patterning in Metals, H.M. Zbib, G.H. Campbell, M. Victoria,D.A. Hughes, L.E. Levine, 2001, ISBN: 1-55899-619-2

Volume 684E—Impacting Society Through Materials Science and Engineering Education, L. Broadbelt,K. Constant, S. Gleixner, 2001, ISBN: 1-55899-620-6

Volume 685E—Advanced Materials and Devices for Large-Area Electronics, J.S. Im, J.H. Werner, S. Uchikoga,T.E. Felter, T.T. Voutsas, H.J. Kim, 2001, ISBN: 1-55899-621-4

Volume 686— Materials Issues in Novel Si-Based Technology, W. En, E.C. Jones, J.C. Sturm, S. Tiwari,M. Hirose, M. Chan, 2002, ISBN: 1-55899-622-2

Volume 687— Materials Science of Microelectromechanical Systems (MEMS) Devices IV, A.A. Ayon,S.M. Spearing, T. Buchheit, H. Kahn, 2002, ISBN: 1-55899-623-0

Volume 688— Ferroelectric Thin Films X, S.R. Gilbert, Y. Miyasaka, D. Wouters, S. Trolier-McKinstry,S.K. Streiffer, 2002, ISBN: 1-55899-624-9






MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS

Volume 689— Materials for High-Temperature Superconductor Technologies, M.P. Paranthaman, M.W. Rupich,K. Salama, J. Mannhart, T. Hasegawa, 2002, ISBN: 1-55899-625-7

Volume 690— Spintronics, T.J. Klemmer, J.Z. Sun, A. Fert, J. Bass, 2002, ISBN: 1-55899-626-5Volume 691— Thermoelectric Materials 2001—Research and Applications, G.S. Nolas, D.C. Johnson,

D.G. Mandrus, 2002, ISBN: 1-55899-627-3Volume 692— Progress in Semiconductor Materials for Optoelectronic Applications, E.D. Jones, M.O. Manasreh,

K.D. Choquette, D. Friedman, 2002, ISBN: 1-55899-628-1Volume 693— GaN and Related Alloys—2001, J.E. Northrup, J. Neugebauer, S.F. Chichibu, D.C. Look,

H. Riechert, 2002, ISBN: 1-55899-629-XVolume 695— Thin Films: Stresses and Mechanical Properties IX, C.S. Ozkan, R.C. Cammarata, L.B. Freund,

H. Gao, 2002, ISBN: 1-55899-631-1Volume 696— Current Issues in Heteroepitaxial Growth—Stress Relaxation and Self Assembly, E. Stach,

E. Chason, R. Hull, S. Bader, 2002, ISBN: 1-55899-632-XVolume 697— Surface Engineering 2001—Fundamentals and Applications, W.J. Meng, A. Kumar, Y-W. Chung,

G.L. Doll, Y-T. Cheng, S. Veprek, 2002, ISBN: 1-55899-633-8Volume 698— Electroactive Polymers and Rapid Prototyping, Y. Bar-Cohen, D.B. Chrisey, Q.M. Zhang,

S. Bauer, E. Fukada, S.C. Danforth, 2002, ISBN: 1-55899-634-6Volume 699— Electrically Based Microstructural Characterization III, R.A. Gerhardt, A. Washabaugh, M.A. Alim,

G.M. Choi, 2002, ISBN: 1-55899-635-4Volume 700— Combinatorial and Artificial Intelligence Methods in Materials Science, I. Takeuchi, C. Buelens,

H. Koinuma, E.J. Amis, J.M. Newsam, L.T. Wille, 2002, ISBN: 1-55899-636-2Volume 702— Advanced Fibers, Plastics, Laminates and Composites, F.T. Wallenberger, N. Weston, K. Chawla,

R. Ford, R.P. Wool, 2002, ISBN: 1-55899-638-9Volume 703— Nanophase and Nanocomposite Materials IV, S. Komarneni, R.A. Vaia, G.Q. Lu, J-I. Matsushita,

J.C. Parker, 2002, ISBN: 1-55899-639-7Volume 704— Nanoparticle Materials, R.K. Singh, R. Partch, M. Muhammed, M. Senna, H. Hofmann, 2002,

ISBN: 1-55899-640-0Volume 705— Nanopatterning—From Ultralarge-Scale Integration to Biotechnology, L. Merhari, K.E. Gonsalves,

E.A. Dobisz, M. Angelopoulos, D. Herr, 2002, ISBN: 1-55899-641-9Volume 706— Making Functional Materials with Nanotubes, P. Nikolaev, P. Bernier, P. Ajayan, Y. Iwasa, 2002,

ISBN: 1-55899-642-7Volume 707— Self-Assembly Processes in Materials, S. Moss, 2002, ISBN: 1-55899-643-5Volume 708— Organic and Optoelectronic Materials, Processing and Devices, S. Moss, 2002,

ISBN: 1-55899-644-3Volume 709— Advances in Liquid Crystalline Materials and Technologies, P.T. Mather, D.J. Broer, T.J. Bunning,

D.M. Walba, R. Zentel, 2002, ISBN: 1-55899-645-1Volume 710— Polymer Interfaces and Thin Films, C.W. Frank, 2002, ISBN: I-55899-646-XVolume 711— Advanced Biomaterials—Characterization, Tissue Engineering and Complexity, 2002,

ISBN: 1-55899-647-8Volume 712— Materials Issues in Art and Archaeology VI, P.B. Vandiver, M. Goodway, J.R. Druzik, J.L. Mass,

2002, ISBN: 1-55899-648-6Volume 713— Scientific Basis for Nuclear Waste Management XXV, B.P. McGrail, G.A. Cragnolino, 2002,

ISBN: 1-55899-649-4Volume 714E—Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics II,

S. Lahiri, 2002, ISBN: 1-55899-650-8

Prior Materials Research Society Symposium Proceedings available by contacting Materials Research Society






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