30 W

2X 180 W Device

340 W22 dB gain

100 W

4X 180 W Device

625 W22 dB gain

8X 180 W Device

30 W 180 W 1200 W32 dB gain

30 W

2X 150 W Device

275 W20 dB gain

4X 150 W Device

100 W 525 W20 dB gain

8X 150 W Device

30 W 150 W 1000 W30 dB gain

Power Amplifier Line-Ups:2.7 - 3.1 and 3.1 - 3.5 GHz

GaN TransistorsMAGX-002731-030L00 2.7-3.1 30MAGX-002731-100L00 2.7-3.1 100MAGX-002731-180L00 2.7-3.1 180MAGX-003135-030L00 3.1-3.5 30MAGX-003135-090L00 3.1-3.5 90MAGX-003135-150L00 3.1-3.5 150MAGX-001220-100L00 1.2-2.0 100

GaN PalletsMAPG-002731-030L00 2.7-3.1 30MAPG-002731-100L00 2.7-3.1 100MAPG-002731-180L00 2.7-3.1 180

Frequency PoutPart Number (GHz) (W)

M/A-COM Technology Solutions

GaN RF PowerProducts

macomtech.com

GaN_training brochure_052511_red_final.qxd:Layout 1 6/3/11 10:43 AM Page 1

GaN RF Power Products

M/A-COM Technology Solutions recently introduced gallium nitride (GaN) RF power transistors. Our initial product offering targetsS-Band pulsed applications and leverages M/A-COM Tech's more than 60-year heritage of providing both standard and customsolutions to meet the most demanding customer needs. Our GaN on Silicon Carbide (SiC) products, offered as transistors and pallets,utilize a 0.5 micron HEMT process and exhibit excellent RF performance with respect to power, gain, gain flatness, efficiency andruggedness over wide operating bandwidths.

Additional products that target applications such as L-Band radar, avionics, EW, and MILCOM, as well as general purpose devices,will be released in 2011. Applications specific and custom assemblies are also available.

Why choose GaN?

GaN RF power devices combine the best properties of two technologies: high power handling and high-voltage operation of siliconLDMOS devices, with the high-frequency performance of GaAs. GaN also offers improved linearity and efficiency performance whencompared to Si LDMOS. GaN features and benefits include:

• High breakdown voltage • Easy to broadband• Superior power density • High frequency operation• High RF gain and efficiency • Excellent thermal conductivity properties

Turn to M/A-COM Tech today and in the future for superior performance, high power GaN solutions. Learn more atmacomtech.com

MAGX-001220-100L00: 1.2-2.0 GHz Transistor

Features

• Pout: 100 Watts• Pulse/Duty: 500 µs/10%• Power Gain: 14.0 dB

Pout vs Pin at 500 µs, 10% (50 V)

Pin (W)

Po

ut

(W)

MAPG-002731-030L00: 2.7-3.1 GHz Pallet

Features

• Pout: 30 Watts• Pulse/Duty: 500 µs/10%• Power Gain: 11.4 dB

Pout vs Pin at 500 µs, 10% (50 V)

Pin (Wpk)

Po

ut

(Wp

k)

MAPG-002731-100L00: 2.7-3.1 GHz Pallet

Features

• Pout: 100 Watts• Pulse/Duty: 500 µs/10%• Power Gain: 12.6 dB

Pout vs Pin at 500 µs, 10% (50 V)

Pin (Wpk)

Po

ut

(Wp

k)

0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0

MAPG-002731-180L00: 2.7-3.1 GHz Pallet

Features

• Pout: 180 Watts• Pulse/Duty: 500 µs/10%• Power Gain: 11.5 dB

Pout vs Pin at 500 µs, 10U (50 V)

Pin (W)

Po

ut

(W)

Samples

Available

Detailed specifications for our standard parts can be found quickly on our website at macomtech.com by typing the part number into the search box.All specifications are subject to change.

GaN_training brochure_052511_red_final.qxd:Layout 1 6/3/11 10:43 AM Page 2

GaN RF Power Products

MAGX-002731-030L00: 2.7-3.1 GHz Transistor

Features

• Pout: 30 Watts• Pulse/Duty: 500 µs/10%• Power Gain: 11.4 dB

Pout vs Pin at 500 µs, 10% (50 V)

Pin (Wpk)

Po

ut

(Wp

k)

MAGX-002731-180L00: 2.7-3.1 GHz Transistor

Features

• Pout: 180 Watts• Pulse/Duty: 500 µs/10%• Power Gain: 11.5 dB

Pout vs Pin at 500 µs, 10% (50 V)

Pin (W)

Po

ut

(W)

MAGX-002731-100L00: 2.7-3.1 GHz Transistor

Features

• Pout: 100 Watts• Pulse/Duty: 500 µs/10%• Power Gain: 12.6 dB

Pout vs Pin at 500 µs, 10% (50 V)

Pin (Wpk)

Po

ut

(Wp

k)

MAGX-003135-150L00: 3.1-3.5 GHz Transistor

Target Specs

• Pout: 150 Watts• Pulse/Duty: 300 µs/10%• Power Gain: 12 dB

Pout vs Pin at 300 µs, 10% (65 V)

Pin (Wpk)

Po

ut

(Wp

k)

MAGX-003135-030L00: 3.1-3.5 GHz Transistor

Features

• Pout: 30 Watts• Pulse/Duty: 500 µs/10%• Power Gain: 11.0 dB

Pout vs Pin at 500 µs, 10% (50 V)

Pin (W)P

ou

t(W

)

We are pleased to provide samples for our GaN products. These samples are generally available two weeks after the request issubmitted. We also offer test fixtures for our power products. These are available on a limited basis. Contact your local SalesRepresentative to learn more or request a sample or test fixture.

Samples

Available

Samples

Available

Samples

Available

Samples

Available

MAGX-003135-090L00: 3.1-3.5 GHz Transistor

Features

• Pout: 90 Watts• Pulse/Duty: 300 µs/10%• Power Gain: 10.5 dB

Pout vs Pin at 300 µs, 10% (65 V)

Pin (W)

Po

ut

(W)

Samples

Available

Detailed specifications for our standard parts can be found quickly on our website at macomtech.com by typing the part number into the search box.All specifications are subject to change.

GaN_training brochure_052511_red_final.qxd:Layout 1 6/3/11 10:43 AM Page 3

M/A-COM Technology Solutions Inc.

Lowell, Massachusetts 01851North America 800.366.2266 • Europe +353.21.244.6400India +91.80.43537383 • China (Shanghai) +86.21.5108.6464

macomtech.com

MTS-L-0511019

GaN RF Power Products

M/A-COM Technology Solutions Inc.

M/A-COMTechnology Solutions (macomtech.com) is a leading supplier of high performancesemiconductors, active and passive components, and subassemblies for use in radiofrequency (RF), microwave, and millimeter-wave applications. Recognized for its broadportfolio of products, M/A-COM Tech serves diverse markets including CATV, wirelessinfrastructure, optical communications, aerospace and defense, automotive, industrial,medical, and mobile devices. M/A-COM Tech builds on more than 60 years of experiencedesigning and manufacturing innovative product solutions for customers worldwide.

Headquartered in Lowell, Massachusetts, M/A-COM Tech is certified to the ISO 9001international quality standard and ISO 14001 environmental management standard.M/A-COM Tech has design centers and sales offices throughout North America, Europe,Asia and Australia.

Quality and Reliability

The goal of M/A-COMTechnology Solutionsis to continually deliver effective, high qualityproducts and services that meet ourcustomers’and internal operations’needsin terms of delivery, performance, safetyand value.

Process controls are implemented such thatthe tasks are performed properly the firsttime, so that products and services meetestablished, agreed-to requirements.

It is the personal responsibility of everyemployee to ensure quality, customersatisfaction, continual improvement,maintenance of our quality managementsystem and compliance with customerand regulatory requirements.

GaN Transistors

Also being released in 2011 are the following GaN transistors and pallets:

GaN Pallets

Frequency Pout Pulse/Duty GainPart Number (GHz) (W) (dB)

MAGX-000035-030000 0.01 - 3.5 30 CW 12 - 30

MAGX-000035-100000 0.01 - 3.5 100 CW 12 - 30

MAGX-000912-125L00 0.96 - 1.215 125 2 ms/10% 18

MAGX-000912-250L00 0.96 - 1.215 250 2 ms/10% 18

MAGX-001214-125L00 1.2 - 1.4 125 2 ms/10% 18

MAGX-001214-250L00 1.2 - 1.4 250 2 ms/10% 18

MAGX-003135 - 180L00 3.1 - 3.5 180 500 µs/10% 12

MAPG-000912-125L00 0.96 - 1.215 125 2 ms/10% 18

MAPG-000912-250L00 0.96 - 1.215 250 2 ms/10% 18

MAPG-001214-125L00 1.2 - 1.4 125 2 ms / 10% 18

MAPG-001214-250L00 1.2 - 1.4 250 2 ms / 10% 18

MAPG-003135-180L00 3.1 - 3.5 180 500 µs/10% 12

GaN_training brochure_052511_red_final.qxd:Layout 1 6/3/11 10:43 AM Page 4