giulio pellegrini 4th silc collaboration meeting, 18-20 dec. 2006, barcelona, spain giulio...

Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, SpainGiulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain

Giulio PellegriniGiulio Pellegrini

3D detector technology at CNM3D detector technology at CNM

2


MotivationMotivation

Equal detectors thickness

W2D>>W3D

Equal detectors thickness

W2D>>W3D

h+

e-

-ve +veSiO2

W3D

E

Bulkh+

e-

+ve

E

p+

n

n+

W2D

+ve

Short distance between electrodes:•low full depletion voltage•short collection distance

more radiation tolerant than planar detectors!!

•No charge sharing

DRAWBACK: Fabrication process rather long and not standard => mass production of 3D devices very critical and very expensive.

S.I. Parker, C.J. Kenney, J. Segal, Nucl. Instr. Meth. Phys. Res. A 395 (1997) 328

3


ApplicationsApplicationsImaging

Radiation Hardness

High resistiv itySem iconductor

Pixel readout

Electronics ch ip

X-ray photon

Passivation layer

Solder bum p

PN N

0,0 5,0x1015 1,0x1016 1,5x1016 2,0x10160

5000

10000

15000

20000

250000,0 3,2x1015 6,4x1015 9,6x1015

fluence(n/cm2) 10 yrs at SLHC

Sig

na

l (e

-)

fluence(p/cm2)

Strip p-type prot. irr. (Casse et al.) 3D detectors prot. irr. (DaVia et al.) Strip p-type neutr. irr. (Pellegrini et al.)

extrapolated

10 yrs at LHC

*Dear-Mama: A photon counting X-ray imaging project for medical applications, Nuclear Instruments and Methods A 569 (2006) 136–139

*

4


Layout and simulationLayout and simulation

Passivation

n+ doped

55um pitch

50-0um

300-250ump- type substrate

p+ doped

10um

Oxide0.4um1um

p+ doped

Metal

Poly 3um

OxideMetal

P-stop p+

50-0um TEOS 2um

5um

G. Pellegrini Presented at the 2nd Trento Workshop on Advanced Silicon Radiation Detectors, Trento, 2006. Available online at: http://tredi.itc.it

ISETcad 3D Simulation

D. Pennicard, “Simulation Results from Double-Sided 3D Detectors”, presented at the 2006 Nuclear Science Symposium.

5


Medipix2

Diodes 2Dspreading

Test structures

Atlas pixel

3d pads

strips

Long strip

10x10 matrixMOS

Test for SEM

Mask designMask design

3x3 matrix

Pilatus

6


ALCATEL 601-EALCATEL 601-E- Deep RIE-ICP.

- Load-lock manual one 4” wafer

- SF6 etching

-C4F8 passivation

-cooled mechanical clamping :He-Ln2

-Possibility of Cryogenic etching.

Substrate Gases

Silicon SF6, C4F8

Silicon Dioxide C4F8

Silicon Nitride SF6, C4F8

Silicon Carbide SF6,O2

G. Pellegrini et al., “Technology development of 3D detectors for high-energy physics and imaging” Nuclear Instruments and Methods A 487, Issues 1-2, 11 July 2002, Pages 19-26.

7


Aspect RatioAspect Ratio

0 20 40 60 80 1000

50

100

150

200

250

300

350

400

450

500

De

pth

(um

)

Etching time(min.)

Holes diameter 5 um 10 um 15 um 20 um 25 um 30 um 50 um 100 um

0 20 40 60 80 1000

5

10

15

20

25

30

35

as

pe

ct

rati

o

Etching time(min.)

Hole diameter 5 um 10 um 15 um 20 um 25 um 30 um 50 um 100 um

• 10 m holes• 55m pitch• 90 minutes etching• 300 m thick wafer• Aspect ratio 24:1 3µm holes

5µm hole

G. Pellegrini et al. “Double Sided 3D Detector Technologies at CNM-IMB” submitted to IEEE TNS

8


PolysiliconPolysiliconPolysilicon Thickness=3m

Poly etched with RIEStandard resist mask

9.4m

2.9m

5.7m4m

9


Spreading resistance

0 1 2 3 4 51E12

1E13

1E14

1E15

1E16

1E17

1E18

1E19

1E20

Co

nc.

(cm

-3)

Distance (m)

Doping diffusion PhosphorusDoping diffusion Phosphorus

Polysilicon thickness 2m

10


Doping diffusion, PhosphorusDoping diffusion, Phosphorus

Junction Depth=660nm

Polysilicon Thickness=2m

Phosphorus diffusionTemp.=1050ºC

top bottom

11


Doping diffusion, BoronDoping diffusion, Boron

Concentration profile

14,000

16,000

18,000

20,000

0 1 2 3 4 5 6 7 8 9 10Depth X (µm)

log

(Co

nce

ntr

atio

n)

[lo

g(c

m-3

)]

3399-1

3399-2

3399-3

3399-4

3399-5

3399-6

wafer number

Sheet Resistance(/sq)

sigma TempExtra time

1 1,1 2% T0+ No

2 0,97 3% T0+ Yes

3 1,8 2% T0 No

4 1,4 1% T0 Yes

5 2,9 2% T0- No

6 2,6 2% T0- Yes

Polysilicon Thickness=3m

Simulation and experimental results

12


Doping diffusion, BoronDoping diffusion, Boron

2.9m

TEOSPoly

Junction

n

p+ 10m

Boron diffusionWafer 3

13


CharacterizationCharacterization

Characterization performed jointly between Glasgow, Liverpool, IFIC (Valencia ) and CNM (Barcelona)

I-V, C-V, and Charge Collection with beta source (90Sr) and IR laser at low temperature.

Development of a general purpose electronics readout based on LHCb (Beetle) chip *

* R. Marco et al. Alibava : A portable readout system for silicon microstrip sensors. 12th Workshop on Electronics for LHC and Future Experiments. September 2006, Valencia SPAIN

ATLAS SCTDAC readout for p-type sensors

14


Glasgow 3D workGlasgow 3D work

Si-n+

poly-n+

Si-p+poly-p+

SiO2

SiO2

passivation

Si(n)

Metal

Glasgow/Diamond signed a contract to work on 3D detector development with: IceMOS Tech Ltd (Belfast)

N.I. Semiconductor company specialized in:

• Trench etch and refill technology

• Thinning

• Wafer bondingIn house ability for all required stages to make

3D detectors

First stage to perform test runs on processing stages

• Dense high aspect ratio hole arrays• Hole doping and filling optimisation

Second stage : Full 3D detectors

• Pixel devices (Medipix and Pilatus)• Strip devices• Pad detectors

All readout via p-type holes onlyFull detectors by Q1-Q2 2007

15


Bump bonding test Bump bonding test structuresstructures

Central ground bus d-side

Probe cardtest pads

c-side

M. Ullán et al., “Test structure assembly for bump bond yield evaluation in high density flip chip technologies”,Microelectronics and Reliability, Vol. 46, no. 7, Jul 2006, Pages 1095-1100

The total yield of the assembly (Y) can be written in terms of the ratio of bad chains to good chains () as:

11log1

)( L

Y

16


Stripixel 3dStripixel 3d

Ready to be tested and irradiated

Z. Li, W. Chen, Y.H. Guo, D. Lissauer, D. Lynn, V. Radeka, M. Lozano, G. Pellegrini “Development of New 3d Si Detectors at BNL and CNM” Submitted to TNS IEEE

Joined fabrication between BNL and CNM

17


INTAS project with CERN for the fabrication of next TOTEM detectors.

G. Ruggiero et al., “Planar Edgeless Silicon Detectors for the TOTEM Experiment”, Nuclear Science Symposium Conference Record, 2004 IEEE Volume 2, 16-22 Oct. 2004 Page(s):922 - 924.

Strips Guard ring Current Terminating Ring

25m

-30 -20 -10 0 10 20 30 40 50 60 70 80 90 1000

20

40

60

80

100

B-B` A-A`

Re

lativ

e c

ha

rge

(%)

Distance(m)

Edgeless detectorsEdgeless detectors

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19


20


ConclusionsConclusions

•CNM clean room facilities are ready for small production of 3D detectors. •First 3D detectors ready for the end of January 2007.•Commercial partner ready for R&D.•Manpower: IFIC (2), Glasgow (5), CNM (3)•Characterization of 3D detectors:

• IFIC and Glasgow: beta and laser setup, simulation• CNM: IV,CV and imaging

•Contribution to the R&D: design, simulation, fabrication, bump bonding, characterization, radiation hardness, imaging.

•Expression of interest from different institutes for the b-layer replacement in the future Atlas upgrade experiment.

giulio pellegrini 4th silc collaboration meeting, 18-20 dec. 2006, barcelona, spain giulio...

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