granted in the metal finishing field

Granted in the Metal Finishing Field Compiled by Anselm Kuhn; E-mail, [email protected]

METAL FINISHING PATENTS PUBLlSHED IN NOVEMBER 2003

CENTRIFUGAL BLAST WHEEL HOUSING US 6692340 (Herscell E Williams) (publ. Feb 17th 2004) Blast wheel housing with opening formed in front wall of housing, a hinged access door connected to the front wall, which allows opening to be closed at will; aperture formed in the access door and a feed chute detachably secured to the access door allowing shot to be fed through. The design allowing rapid, easy and safe access to interior for inspection of wheel and linings.

HARD, SCRATCH-RESISTANT COATINGS FOR SUI~STRATE~ US 6652974 (Cardinal IG Co.) Krisko, A. J Transparent, scratch-resistant, amorphous, easily washed coating on a transparent substrate, togeth- er with a method for its preparation. A substrate such as glass is introduced into a sputtering chamber, a silicon-containing target is sputtered in an atmosphere comprising nitrogen and a hydrocar- bon gas to produce on the substrate a film containing a carbide and a nitride of silicon. The film preferably has a thickness in the range of about 30 to about 500um, and its surface preferably exhibits a contact angle with water below about 25”. The protective coating may be applied directly to a transparent substrate such as glass, or may be applied as a protective coating over an optical film stack carried by the substrate. If desired, a glass substrate may be coated on one side with the optical film stack and coated on the opposite side with the protective coating.

CARSON FILM. METHOD FOR FORMATION THEREOF AND ARTICLE COVERED WITH CARBON FILM AND METHOD FOR PREPARATION THEREOF US 6652969 (N.&n Electric Co. Ltd.) Takeuchi, J, Murakami, Y et al. A carbon film containing fluorine and hydrogen, wherein a spectrum determined by FT-IR (Fourier Transform Infrared) spectrum analysis exhibits such a relationship that a ratio (IR.C-F)/(IR.C-H)

between a peak area (IR.C-F) in a range from 1000 cm to 1300 cm resulting from C-F bonds and a peak area (IR.C-H) in a range from 2800 cm to 3100 cm resulting from C-H bonds is larger than 0, and a spectrum determined by XPS (X-ray photoelectron spectrum analysis) exhibits such a relationship that a ratio (FWClS) between a peak intensity resulting from FlS and a peak intensity resulting from ClS is larger than 0 and smaller than 3. A carbon film containing hydrogen and nitrogen. A carbon film containing at least one of metal, metal compound, silicon and silicon compound.

SEQUENTIAL CHEMICAL VAPOR DEPOSITION US 6652924 (Licensee for Microelectronics) Sherman, A. Sequential CVD employing a reactor operated at low pressure, a pump to remove excess reactants, and a line to introduce gas into the reactor through a valve. A first reactant forms a monolayer on the part to be coated, while the second reactant passes through a radical generator, which partially decom- poses or activates the second reactant into a gaseous radical before it impinges on the monolayer. This second reactant does not necessarily form a monolayer but is available to react with the monolayer. A pump removes the excess second reactant and reaction products completing the process cycle. The process cycle can be repeated to grow the desired thickness of film.

METHOD FOR SELECTIVE SURFACE PROTECTION OF A GAS TURBINE BODE WHICH HAS PREVIOUSLY BEEN IN SERVICE US 6652914 (Gen Electric Aviat Service OPE) Chen, K.N., Yow, K.H. et al. A gas turbine blade which has previously been in service is protected by cleaning the gas turbine blade, and then first depositing a platinum first layer on the airfoil and the platform of the gas turbine blade. Thereafter, a platinum second layer is deposited over the platform but not the airfoil. A platinum-aluminide protective coating is formed by depositing an aluminum-containing layer overlying

60 Metal Finishing

both the platform and the airfoil and interdiffusing ma is capable of uniformly polishing diamond sur- the platinum and the aluminum. faces.

METHOD OF FORMING A COATED BODY HAVING A NANOCRYSTALLINII CVD COATING OF TI (C,N.O) US 6652913 (SeCo.Tools AB) Ruppi, S., Karlsson, L. A method of forming a coated body having a nanocrystalline CVD coating of Ti (C,,N,O) is dis- closed. The coating is formed using the MTCVD process and including, as part of the gaseous mix- ture, CO, CO2 or mixtures thereof, The use of this dopant during the coating results in a much smaller, equiaxed grain size.

PROCESS AND AN APPARATUS FOR NITRIDING AN ALUMINUM-CONTAINING SURSTRATE US 66528803 (NGK Insulators Ltd.) Ishikawa, T, Kawasaki, S. When a nitride film is formed on a substrate containing at least metallic aluminum, a fluctuation in forming a nitride film can be prevented, or the formation of the nitride film can be accelerated. A substrate containing at least metallic aluminum is subjected to a heating treatment in vacuum of lo-3torrs or less, and subsequently it is subjected to a heating/nitriding treatment in an atmosphere containing at least nitrogen. During the heating/nitriding treatment, porous bodies and through which nitrogen atoms containing gases (A) and (B) can flow are contacted with the atmosphere.

METHOD OF OPERATING A REACTOR FOR REMOVING IMPURITIES BY ELECTROCHEMICAL MEANS US 6652733 (Adept Technologies AS) Napper, D. A method of operating a reactor for removing impurities by electrochemical means from liquids, such as aqueous solutions. The liquid is passed through series of plate-shaped reaction electrodes electrical- ly insulated against each other at a liquid velocity above a minimum to prevent dissociation into con- stituent gases, but sufficient to ensure interaction with an electrical current passing between the plate-shaped electrodes. The latter have corrugated forms and/or their surfaces provided with embossed relief patterns to enhance the electrochemical effect between the electrodes. The conductivity of the treated liquid, the organic contents of the liquid and the flow of the liquid is measured and the length of the flow path for the liquid in the reactor is estab- lished in dependence on the measured parameters.

IMPLANT SURFACE PREPARATION US 6652765 (Implant Innovations Inc.) Beaty, K. D. The surface of a device that is surgically implantable in living bone is prepared. The device is made of titanium with a native oxide layer on the surface. The method of preparation comprises the steps of removing the native oxide layer from the surface of the device and performing further treatment of the surface substantially in the absence of unreacted oxygen.

METHOD AND APPARATUS FOR LARGE-SCALE DIAMOND POLISHING US 6652763 (HRL Lab. LLC) Gregoire, D.J, Wei, R. A method and apparatus for the polishing of diamond surfaces, wherein the diamond surface is subjected to plasma-enhanced chemical etching using an atomic oxygen polishing plasma source. In the apparatus, a magnetic filter passes a plume of high- density, low-energy, atomic oxygen plasma. The plas-

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March 2004

Ultrasonic vibrations are generated in the flow path for stimulating a reaction process.

PLATING BATH AND METHOD FOR DEPOSITED A METAL LAYER ON A SUBSTRATE US 6652731 (Shipley Co.LLC) Cobley, A.J., Barstad, L.R. et al. A metal plating bath and metal plating process that contains aldehyde compounds that prevent or reduce the consumption of metal plating bath additives. The metal plating baths provide for an effi- cient plating method because the plating process need not be interrupted to replenish the plating bath with additives. The metal plating baths may be employed to plate metals such as copper, gold, silver, palladium, cobalt, chromium, cadmium, bismuth, indium, rhodium, iridium, and ruthenium.

CYANIDE-FREE AGUEOUS ALKALINE BATH USED FOR THE ELECTROPLATING OF ZINC OR ZINC-ALLOY COATINGS US 6652728 (Atotech Deutschland GmbH) Grieser, II, Sonntag, B. et al. An aqueous alkaline cyanide-free bath for the elec-

trodeposition of zinc or zinc alloy coatings on substrate surfaces is described, which contains in addi- tion to a source of zinc ions and optionally a source of further metal ions, also hydroxide ions and a poly- mer of the general formula A that is soluble in the bath as well as optionally conventional additives. The bath may further contain a quaternary derivative of a pyridine-3-carboxylic acid of the formula B and/or a quaternary derivative of a pyridine-3-carboxylic acid of the formula CA. A process for the electrodeposition of zinc and zinc alloy coatings using the a/m bath is also described. It is possible to produce coatings that exhibit a uniform layer thickness combined with a high gloss, and which do not exhibit any tendency to exfoliate.

SEQUENTIAL ELECTRODEPOSITION OF METALS USING MODULATED ELECTRIC FIELDS FOR MANUFACTURE OF PRINTED CIRCUIT BOARDS HAVING FEATURES OF DIFFERENT SIZES US 6652727 (Faraday Technology Marketing G) Taylor, EJ, Inman, M.E. et al. A contintinous layer of a metal is electrodeposited onto a substrate having both hydrodynamically

62 Metal Finishing

inaccessible recesses and hydrodynamically accessible recesses on its surface by a two-step process in which the hydrodynamically inaccessible recesses are plated using a pulsed reversing current with cathode pulses having a duty cycle of less than about 50% and anodic pulses having a duty cycle of greater than about 50% and the hydrodynamically accessible recesses are then plated using a pulsed reversing current with cathodic pulses having a duty cycle of greater than about 50% and anodic pulses having a duty cycle of less than about 50%.

ETHOD FOR REDUCING WAFER EDGE DEFECTS IIU AM

ELECTRODEP~SITI~N PrkocEss US 6652726 (Taiwan Semiconductor MFG) Chou, S. W A method for reducing or avoiding semiconductor wafer peripheral defects and contamination during and following electrodeposition including providing a wafer chuck assembly sealably attached to a back side of a semiconductor wafer leaving an exposed peripheral portion of the back side of the semiconductor wafer the backside parallel to a front side of the semiconductor wafer comprising a process surface; contacting at least the semiconductor process surface with a process solution; and, simultaneously directing a pressurized flow of gas onto the exposed peripheral portion such that the pressurized flow of gas covers the exposed peripheral portion including being radially directed outward toward the periph- ery of the semiconductor wafer.

LRCTROLYSIS SYSTEM

US 6652719 (Skydon Carp) Tseng, A. Electrolysis system having com- ponents for separating gases, especially toxic gases produced along with electrolyzed liquids from the respective chambers of the electrolysis cell; for reprocess- ing and recovering the separated gas/es into useful products; and for treating new or used electrolyzed liquids obtained from the chambers of the electrolysis cell prior to discharge into the environment.

&!SE OF RF BIASED ESC TO

INFLUENCE THE FILM PROPERTIES OF TN AND +iN

US 6652718 (Novellus Systems Inc. Danek, M., Tkach, G. et al.

A method of depositing thin films comprising Ti and TiN within vias and trenches having high aspect ratio openings of 6:l. The Ti and TIN layers are formed on an integrated circuit substrate using a Ti target in a non-nitrided mode in a hollow cathode magnetron apparatus in combination with an RF biased electrostatic chuck to modulate the properties of the deposited Ti and TIN layers are superior in step coverage, grain size, grain orientation, roughness and uniformity such that subsequent filling of the high aspect ratio opening is substantially void-free.

METHOD FOR PRODUCING AN

ON AN ALUMINUM BASE

US 6652669 (Sunyx Surface Nanotechnologies) Reihs, K., Wenz E. et al. Method for producing an ultraphobic surface on aluminum as the supporting material and to the resulting surface and its use. The surface of an aluminum support is anodized, especially but anodic oxidation, and/or electrochemically pickled in an acid solution with an alternating voltage, treated in hot water or water vapor at a temperature of 50 to lOO”C., optionally coated with an adhesion promoter layer and then provided with a hydrophobic or especially oleophobic coating.

UFFEBED RINSING METHOO US 6652659 (Honeywell Int’t Inc.) Kumar, R., Roeters, G. A method of rinsing an electronic substrate recog- nizes that adding a buffer to a rinsing fluid elimi-

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Published December 2003 Hardbound 2080 Pages ISBN: O-75-064509-8

GBP 140 US$ 200

Edited By: William F. Gale, Auburn Universin/, Auburn, Alabama, U.S.A. Terry G. Totemeier, Idaho National Engineering and Environmental Laboratory, Idaho Falls, U.S.A.

Reviews of previous editions: “A publication of no equal that bas become an essential reference during its35years ofpub/icetion.“ASLIB Book List

“A/f mete/lurgists will covet a copy of Smitbe//s.“Chsmwy and Industry

“##provides an invaluable reference source for ail workers, fibraries and research leborateries in t&e field of engineering andmetatlurgy.” RNF Abstract

nates fluctuations in the amount of residues on an electronic substrate, and a buffered rinsing fluid is prepared by (a) providing water from a water source; (b) deionizing the water to produce deionized water; (c) adding a buffer to the deionized water at a concentration effective to eliminate fluctuations in the amount of residues on the electronic substrate. The electronic substrate is rinsed with the buffered rinsing fluid.

METHOD FOR ELECTROCHEMICALLY TREATING ARTICLES AND APPARATUS AND METHOD FOR CLEANING ARTICLES US 6652657 (United Technologies Corp.) Shallow, C.T, Parrish, R.B. A method for performing electrochemical processes using an array of dedicated cells. Automating the method of performing the processes and cleaning the articles between electrochemical processes. Using an array of dedicated cells including rinsing cells which

have a rinse chamber adapted to receive an article and flow rinse fluid such that the fluid impinges against the article at predeter- mined locations.

METHODS AND APPARATUS FOR FORMING A METAL LAYER ON AN INTEGRATED CIRCUIT DEVICE USING A TANTALUM PRECURSOR us 2003219979 Choi, K.I., Kang, S.B. et al. A metal layer is formed on an integrated circuit device including forming an insulating layer on an integrated circuit substrate. A contact hole is formed by selectively etching the insulating layer to thereby partially expose the substrate. A metal layer including tantalum nitride is formed on the insulating layer including the contact hole using a tantalum precursor including a tantalum element and at least one bonding element that is chemically bonded to the tantalum element. A part of the at least one bonding element include at least one ligand bonding element that is ligand-bonded to the tantalum element. Forming the metal layer may include removing at least some

of the ligand-bonded elements with a removing gas that is substantially free of hydrogen radicals. The metal layer may be formed using a chemical vapor deposition (CVD) or an atomic layer deposition (ALD) process. A copper or other metal layer may be deposited on the metal layer including tantalum nitride.

ELECTROSTATIC-ERASING ABRASION-PROOF COATING AND METHOD FOR FORMING THE SAME US 2003219601 (Semiconductor Energy Lab) Itoh, K. An abrasion-proof and static-erasing coating is formed on the contact surface of a contact image sensor. The coating comprises a first film having a high hardness and a low conductivity, a second film formed on the first film and having a low hardness and a high conductivity, and a third film having a high hardness and a high resistivity providing an abrasion-proof insulating external surface.

64 Metal Finishing

TREATIWENT DENWE. 003219547

Luttringhaus-Henkel, A., Arnold, G. et al. To make it easier to move workpieces into and out of reactors in order for them to be treated by CVD there- in, a device is provided for the CVD treatment of workpieces, which comprises a conveyor and at least one reactor secured to the conveyor, the device having at least one mechanical control cam and the reactor having an opening and closing device that is actuated by at least one control cam.

Law, K-S., Maydan, D. A method and apparatus for forming a polysilicon layer on a pre-annealed glass substrate. In one aspect, the method includes loading a pre-annealed glass substrate in a deposition chamber, depositing an amorphous silicon layer on the pre-annealed glass substrate, and annealing the pre-annealed glass substrate to form a polysilicon layer thereon. The amorphous silicon layer may be deposited concurrently with the annealing step to produce the polysilicon layer on the pre-annealed glass substrate. A nitride layer and/or an oxide layer may be deposited prior to depositing the amorphous silicon layer and annealing the pre-annealed glass substrate.

SING Mpreoo FOR #ANO-SIZE SUBSTANCE

3217933 (Kabushikikaisha Equos Res) Kunimatsu, K. Miyagi, K. An active portion in a nano-size substance is destroyed selectively by applying an electric potential to the nano-size substance having a network structure of carbon at an outer shell thereof in electrolytic solution. For example, an electric potential of 1.20 to 1.60 V (RHE) is applied to carbon nanotube in electrolytic solution so as to oxidize the active portion in the carbon nanotubes selectively and remove their ends, so creating an open end in the carbon nanotube.

MACHEN~NG METHOD AND

LE~TROLYTI~ MACHINING APPARATUS

US 2003217931 (Sankyo Seiki Seisakusho KK) Kobayashi, 7: Usui, M. An electrolytic machining method includes elec- trolytically machining a workpiece that is posi- tioned opposite to an electrode tool while filling an electrolytic solution between the workpiece and the electrode tool and applying a current across the workpiece and the electrode tool. The electrolytic machining is performed by having at least a part of

opposing sections of the workpiece and the electrode tool immersed in the electrolytic solution reserved in a machining and storing section, while the machining surface of the workpiece is posi- tioned at a depth of about 5 mm to about 35 mm from the surface of the electrolytic solution reserved in the machining and storing section, and by supplying the electrolytic solution to be filled in a gap at the opposing sections between the workpiece and the electrode tool.

Luo, Y An electrochemical machining apparatus and method for machining a workpiece. The apparatus provides a pulse of electric power, which is conduct- ed from the workpiece, to an electrolyte flowing through a gap, and then to an electrode. Material is eroded from the workpiece when the pulse of electric power is applied, thus machining the workpiece. The apparatus includes a power supply to supply the electric power and a switching portion for producing the pulse by switching the electric power ON and OFF. The switching portion is capable of producing a pulse of electric power with a pulse duration of about 2 microseconds and a current of at least about 2800 amperes.

~nmwus AND Mn~ob FOR REGULATING

WS, SUCH AS FLOWS OF ~LE~~OC~z~l~

PROCESSING FLU#DS

US 2003217929 Peace, S.L. A method and apparatus for regulating fluid flows, such as flows of electrochemical processing fluids for processing microelectronic workpieces. The apparatus includes a valve body having an entrance port, an exit port, and a flow passage between the entrance and exit ports through which a first fluid flows. The valve body further includes a pressure chamber coupleable to a second fluid source and at least partially isolated from the flow passage. A regulator, movably disposed in the flow passage to change a flow area of the flow passage, has a first surface with a first projected area and a second surface with a second, larger, projected area, both of which are operatively coupled to the first fluid. A third surface of the regulator is operatively coupled to the second fluid. The regulator can adjust its posi- tion ot maintain a constant or nearly constant first fluid flow rate as the fluid pressure at the entrance port changes.

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granted in the metal finishing field

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