WPM3407

WPM3407

Single P-Channel, -30 V, -4.4A,Power MOSFET

Order information

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol 10 S Steady State UnitDrain-Source Voltage VDS -30 VGate-Source Voltage VGS ±20

Continuous Drain Current(TJ = 150 °C)a

TA=25°C ID4.4 3.7

ATA=70°C 3.5 2.9Pulsed Drain Current IDM -20

Maximum PowerDissipation a

TA=25°C PD1.4 1.0

WTA=70°C 0.9 0.6

Operating Junction and StorageTemperature Range TJ, Tstg -55 to 150 °C

DescriptionThe WPM3407 uses advanced trench technology to provideexcellent RDS(ON) with low gate charge. This device is suitable foruse in DC-DC conversion applications. Standard ProductWPM3407 is Pb-free.

Features

Application

Power Management in Note bookPortable EquipmentBattery Powered System

-

DC/DC ConverterLoad Switch

V(BR)DSS RDS(on) Typ

−30 V 36 mΩ @ −10 V53 mΩ @ −4.5 V

Part Number Package Shipping

WPM3407-3/TR SOT23-3 3000Tape&Reel

pin connections :

SOT 23-3

21

3

P Channel

W P7= Specific Device CodeZ = Date Code

WP7Z

1 2

3

Gate Source

Drain

G

S

D

Top View

2

3

1

Marking:

-- -

Will Semiconductor Ltd. 1 2015/08/25 – Rev. 1.3

Http://www.sh-willsemi.com

WPM3407

a. Surface Mounted on FR4 Board using 1 in sq pad size, 1oz Cu.

Electrical Characteristics (TJ = 25°C unless otherwise noted)

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Junction-to-Ambient Thermal Resistance at ≤ 10 s

RθJA70 90

°C/WSteady State 90 125Junction-to-Case Thermal Resistance Steady State RθJC 50 80

Parameter Symbol Test Condition Min Typ Max UnitStatic Parameters

Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = -250 µA -30 V

Zero Gate Voltage Drain Current IDSS VDS GS = 0 VTJ = 25°C -1

µATJ = 85°C -10

Gate-Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±100 nA

Gate Threshold Voltage VGS(th) VGS = VDS, ID = -250 µA -1.0 -2.0 -3.0 V

Drain-source On-Resistance RDS(on)VGS = -10V, ID

mΩVGS = -4.5, ID

Forward Recovery Voltage VSD VGS = 0 V, IS =-1.0A

Forward Transconductance gFS VDS = -5.0 V, ID = -5 A 5 8 S

Dynamic

Input Capacitance Ciss

VGS = 0 V, f = 1.0 MHz, VDS = -15 V

700 950 1200

pFOutput Capacitance Coss 90 120 150

Reverse Transfer Capacitance Crss 75 100 125

Total Gate Charge Qg(tot)

VGS = -10 V, VDS = -15 V, ID = 5 A

13 18 23

nCThreshold Gate Charge Qg(th) 1.5 2 2.5

Gate- Source Charge Qgs 2 2.5 3

Gate- Drain Charge Qgd 3 3.8 4.5

Gate Resistance Rg VGS = 0 V, VDS = 0 V, f = 1.0 MHz 5 8 Ω

Switching Parameters

Turn-On Delay Time td(on)

VGS = -10 V, VDS = -15 V,ID=-4.3A, RG=6 Ω

8 11 15

nsRise Time tr 4 6 9

Turn-Off Delay Time td(off) 30 40 50

Fall Time tf 5 7.5 10Body Diode Reverse Recovery Time trr IF=-5A, dI/dt=100A/µs 25 ns

Body Diode Reverse Recovery Charge Qrr IF=-5A, dI/dt=100A/µs 14 nC

-

= 2 4 V , V

=-3.0A 53 66

=-4.4A 36 46

-0.79 -1.5-0.5 V

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WPM3407

Typical Performance Characteristis

0 1 2 3 4 50

4

8

12

16

20

24

I D,D

rain

Cur

rent

(A)

VGS=10V

VGS=6V

VGS=4V

VGS=3V

VDS,Drain-Source voltage(V)

Drain Current VS Drain-Source voltage

0 5 10 15 20

VGS=4.5V

VGS=10V

VGS=6V

ID, Drain Current(A)

Drain Current vs ON ResistanceR

DS(

ON

)ON

Res

ista

nce(

mO

hm)

0 2 4 6 8 10

0.04

0.08

0.12

0.16

0.20

ID=-3A

Gate-Source Voltage vs ON Resistance

RD

S(O

N) O

N R

esis

tanc

e(O

hm)

VGS,Gate-Source Voltage(V)0 1 2 3 4 5 6

0

5

10

15

20

25

VGS,Gate-Source Voltage(V)

VDS=-2V

I D,D

rain

Cur

rent

(A)

Drain Current VS Gate-Source Voltage

0.8

1

1.2

1.4

1.6

0 25 50 75 100 125 150 175

Temperature (°C)

On-Resistance vs. Junction

Nor

mal

ized

On-

Res

ista

nce

VGS=-10V

VGS=-4.5V

ID=-3A

30

150

120

90

60

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WPM3407

0

1

2

3

4

5

6

7

8

9

10

0 2 4 6 8 10 12 14 16

-Qg (nC)

Gate-Charge Characteristics

-VG

S (V

olts

)

0

200

400

600

800

1000

1200

0 5 10 15 20 25 30

-VDS (Volts)

Capacitance Characteristics

Cap

acita

nce

(pF)

Ciss

Coss

Crss

0

10

20

30

40

0.001 0.01 0.1 1 10 100 1000

Pulse Width (s)

Single Pulse Power Rating Junction-to-Ambient (Note E)

Pow

er (W

)

0.1

1

10

100

0.1 1 10 100-VDS (Volts)

-I D (A

mps

)

Maximum Forward Biased Safe Operating Area (Note E)

100 s

10ms1ms0.1s

1s

10sDC

RDS(ON)limited

TJ(Max)=150°CTA=25°C

VDS=-15VID=-6A

TJ(Max)=150°CTA=25°C10 s

0.01

0.1

1

10

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Pulse Width (s)Normalized Maximum Transient Thermal Impedance

ZJA

Nor

mal

ized

Tra

nsie

nt

Ther

mal

Res

ista

nce

Single Pulse

D=Ton/TTJ,PK=TA+PDM.Z JA.R JAR JA=40°C/W

TonT

PD

In descending orderD=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Will Semiconductor Ltd. 4 2015/08/25 – Rev. 1.3

Avalanche Energy (Single pulsed) Test Circuit & Waveforms

EAS=1/2 L*IAR2

WPM3407

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WPM3407

Power Dissipation Characteristics1. The package of WPM3407 is SOT23-3, surface mounted on FR4 Board using 1 in sq pad size，1 oz Cu，R θJA is 125℃/W.

2. The power dissipation PD is based on TJ(MAX)=150°C, and the relation between TJ and PD is TJ = Ta + R θJA* PD , themaximum power dissipation is determined by R θJA .

3. The R θJA is the thermal impedance from junction to ambient, using larger PCB pad size can get smaller R θJA and result inlarger maximum power dissipation.

125℃/W when mounted ona 1 in2 pad of 1 oz copper.

Will Semiconductor Ltd. 6 2015/08/25 – Rev. 1.3

WPM3407

Packaging InformationSOT-23-3 Package Outline Dimension

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