High Frequency Compact Noise

Modelling of Multi-Gate MOSFETs

A.Lázaro*, A. Cerdeira**, B. Nae*, M. Estrada**, B. Iñiguez*

Dpt. d’Enginyeria Electrònica, Elèctrica i Automàtica, Universitat Rovira i Virgili, 43007 Tarragona, Spain(

benjamin.iniguez@urv.cat)** CINVESTAV, Mexico City

Segmentation methodSegmentation method• We use the active line approach to extend the compact

model to high frequency operation. It is based on splitting the channel into a number of elementary sections

• Our quasi-static small-signal equivalent circuit, to which we add additional microscopic diffusion and gate shot noise sources, is applied to each section

• Our charge control model allows to obtain analytical expressions of the local small-signal parameters in each segment

C gc(x)

g ch(x)

gm (x)

in(x)

. . .

G

. . .. . .

S Dx x+x

Segmentation MethodSegmentation Method

Frequency noise behaviour of Fmin Wfin=10 nm, Hfin=30 nm, tox=1.5 nm, tbox=50 nm, 100 fingers,VGS−VTH=0.5 V, VDS=1 V at 10 GHz

Extrinsic noise parameters as function of gate length for FinFET Wfin=10 nm, Hfin=30 nm, tox=1.5 nm, tbox=50 nm, 100 fingers,VGS−VTH=0.5 V, VDS=1 V at 10 GHz.

Analytical explicit modelAnalytical explicit model

0 .5 1 1 .5 21 0

-2 6

1 0-2 4

1 0-2 2

G a te V o lta ge (V )

Cur

rent

Noi

se (

A2 /Hz)

0 .5 1 1 .5 20

0 .5

1Im

(C)

G a te V o lta ge (V )

C o m p a c t M o d e lS e gm e n ta tio n m e th o d

D ra in

G a teComparison of current noise densities and imaginary part of correlation coefficient as function of gate voltage calculated with the segmentation method (●) and the singlepiece model (—) for a DG MOSFET with L=1 μm, tox=2 nm, ts=34 nm, VDS=2V, f=1 GHz).

Single-piece compact expressions to model the drain, gate current noise

spectrum densities and their correlations were derived for for DG MOSFETs