Usage examples: Welding machine, UPS, power conditioner, air conditioner,PFC circuit for various switching power supplies, inverter circuit, etc.

Package: TO-247, TO-247-4

High Speed Discrete IGBT

SeriesHigh speed W

Saving energy is a priority in new industrial and communication devices, as energy needs grow worldwide. Moreover, power supplies for these devices are becoming smaller in answer to space-saving efforts and device downsizing. To meet these needs, Fuji Electric developed a high speed discrete IGBT “High speed W series.”

・High speed switching characteristics (40% reduction in turn-off loss)*1

・4-pin package with an additional sub-emitter terminal (TO-247-4) is added to lineup

・ Tjmax=175°C guaranteed

MTET0-3080-EN

Safety Precautions＊Before using this product, read the "Instruction Manual" and "Specifications" carefully, and consult with the retailer from which you purchased this product as necessary to use this product correctly.＊The product must be handled by a technician with the appropriate skills.

• Fuji Electric Hong Kong Co., Ltd.• Fuji Electric Taiwan Co., Ltd.• Fuji Electric Asia Pacific Pte. Ltd.• Fuji Electric Corp. of America• Fuji Electric Europe GmbH

Suites 1911-13, 19/F., Tower 6, The Gateway, Harbour City, Tsim Sha Tsui, Kowloon, Hong Kong10F. No.168, Song Jiang Road, Taipei, Taiwan151 Lorong Chuan, #2-01A, New Tech Park, SINGAPORE 55674150 Northfield Avenue Edison, NJ 08837, USAGoethering 58, 63067 Offenbach, am Main, F.R. GERMANY

Tel: +852-2664-8699Tel: +886-2-2515-1850Tel: +65-6533-0014Tel: +1-732-560-9410Tel: +49-69-6690290

URL http: //www.fujielectric.com/products/semiconductor/Gate City Ohsaki, East Tower, 1-11-2, Osaki, Shinagawa-ku, Tokyo 141-0032, Japan Tel:+81-3-5435-7156

Product Line-up Meaning of Device Type

1. High Speed Switching Characteristics (40% Reduction in Turn-off Loss)*1

2. 4-pin package with an additional sub-emitter terminal (TO-247-4) is added to lineup

Improving VCE(sat)-Eoff trade-off

40-50% reduction in switching loss compared to High-Speed V series

*1 Comparison to the conventional products (High-Speed V series)

VCE(V)

Device Type

Without Diode

650

1200

IC(A)

40

50

50

60

75

75

25

40

40

VCE(sat)(V)

1.8

1.8

1.8

1.8

1.8

1.8

2.0

2.0

2.0

Eon(ｍJ)

0.29

0.42

0.60

0.95

0.90

2.80

Eoff(ｍJ)

0.29

0.46

0.67

1.20

1.30

1.60

QG(nC)

180

215

250

300

300

80

120

Reduction in the inductance of gate-emitter loop by adding a sub-emitter terminal

17% Reduction in turn-off loss and 56% reduction in turn-on loss compared to TO-247 package (3-pin)

120

TO-247

TO-247

TO-247-4

TO-247

TO-247

TO-247-4

TO-247

TO-247

TO-247-4

FGW40N65W

FGW50N65W

FGW60N65W

FGW75N65W

FGW25N120W

FGW40N120W

FG W 40 N 120 W D

FGW40N65WD

FGW50N65WD

FGZ50N65WD

FGW60N65WD

FGW25N120WD

FGW40N120WD

FGW40N65WE

FGW50N65WE

FGZ50N65WE

FGW60N65WE

FGW75N65WE

FGZ75N65WE

FGW25N120WE

FGW40N120WE

FGZ40N120WEDiscrete IGBT

Package　W: TO-247　Z : TO-247-4

Series　W　H　V　RB

: High speed W series: High speed V series : Standard V series: RB-IGBT

Diode type　C, E　D　 　Blank

: With Diode (IF=IC): With Diode (IF=IC/2): Without Diode

Polarity N: N-channel

IC [A] @ 100°C

VCE: VCE × 0.1

0

0.25

0.5

0.75

1

1.25

1.5

1.75

0 10 20 30 40 50

Eof

f [m

J]

Eof

f [m

J]

IC [A]

Condition: Eoff VCC=400V, IC=25A, VGE=+15/-0V, RG=10Ω, Tj=125°C

IC-Eoff Characteristics Comparison

0

0.3

0.6

0.9

1.2

1.5

1 1.2 1.4 1.6 1.8 2VCE(sat) [V]

17% reduction @IC=75A56% reduction @IC=75A

VCE(sat)-Eoff Characteristics Comparison

Condition: Eoff VCC=400V, IC=25A, VGE=+15/-0V, RG=10Ω, Tj=125°C VCE(sat) IC=25A, VGE=15V, Tj=125°C

approximately 40%reduction @IC=25A

approximately 40%reduction @IC=25A

High-Speed Vseries

High-Speed Vseries

High-Speed Wseries

High-Speed Wseries

Turn-off Loss Comparison

Device: FGZ75N65WE, FGW75N65WECondition: VCC=400V, VGE=15V, RG=10Ω, Tj=125°C

Turn-on Loss ComparisonTO-247-4

Eof

f [m

J]

IC [A]

3pin3pin3pin

4pin4pin4pin

Eon

[mJ]

IC [A]

3pin3pin

4pin4pin

3pin

5.04.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.00 25 50 75 100

5.04.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.00 25 50 75 100

4pin

0.12 0.40 215

0.37 0.68

1.10 1.40

Controlloop

Powerloop

Circuit diagram

PWM

VG

VC

ERG

Gate

Sub-Emitter

Collector

Emitter

Emitter commonEmitter commoninductance inductance ≒ 0≒ 0

Emitter commoninductance ≒ 0

①Collector②Emitter③Sub-Emitter④Gate

①②③④

Package(IF=IC/2)

With Diode(IF=IC)

With Diode