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http://www.eet.bme.hu
Budapest University of Technology and EconomicsDepartment of Electron Devices
Microelectronics, BSc course
Bipolar transistors 3
http://www.eet.bme.hu/~poppe/miel/en/08-bipolar3.pptx
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Budapest University of Technology and Economics
Department of Electron Devices
16-10-2014 Microelectronics BSc course, Bipolar transistors 3 © András Poppe & Vladimír Székely, BME-EET 2008-2014 2
Characteristics of the ideal BJT
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Budapest University of Technology and Economics
Department of Electron Devices
16-10-2014 Microelectronics BSc course, Bipolar transistors 3 © András Poppe & Vladimír Székely, BME-EET 2008-2014 3
Common base setup
Also called grounded base setup
input output
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Budapest University of Technology and Economics
Department of Electron Devices
16-10-2014 Microelectronics BSc course, Bipolar transistors 3 © András Poppe & Vladimír Székely, BME-EET 2008-2014 4
Common base setup
Input characteristic: Output characteristic:
IE
normal active
saturationclosed
normal active
closed
inverse active
saturation
input output
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Budapest University of Technology and Economics
Department of Electron Devices
16-10-2014 Microelectronics BSc course, Bipolar transistors 3 © András Poppe & Vladimír Székely, BME-EET 2008-2014 5
The process of amplificationcommon base setup
6,210
26
mA
mV
I
Ur
E
Td
20010
2000
in
outu u
uA
mVmAriu dbe 4,106,24 in
mVmARiu tki 20005004 out
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Budapest University of Technology and Economics
Department of Electron Devices
16-10-2014 Microelectronics BSc course, Bipolar transistors 3 © András Poppe & Vladimír Székely, BME-EET 2008-2014 6
Common emitter setup
Also called as grounded emitter setup
![Page 7: Http:// Budapest University of Technology and Economics Department of Electron Devices Microelectronics, BSc course Bipolar transistors 3](https://reader037.vdocument.in/reader037/viewer/2022110116/551c55d1550346a5458b4f72/html5/thumbnails/7.jpg)
Budapest University of Technology and Economics
Department of Electron Devices
16-10-2014 Microelectronics BSc course, Bipolar transistors 3 © András Poppe & Vladimír Székely, BME-EET 2008-2014 7
Common emitter setup
0CBENC IIAI
CBE III
N
CBB
N
NC A
II
A
AI
110
0)( CBCBNC IIIAI
N
NN A
AB
1
N
CBCE A
II
1
00
0CEBNC IIBI
B : common emitter, large signal current gain
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Budapest University of Technology and Economics
Department of Electron Devices
16-10-2014 Microelectronics BSc course, Bipolar transistors 3 © András Poppe & Vladimír Székely, BME-EET 2008-2014 8
Common emitter setup
No current flows. Part of the base current is spent on accumulating the base chrage. UBE voltage increases, the emitter current starts to flow. The other part of the base current is spent on recombination with some part of the emitter current.
The charge in the base is not increased any longer. Any increase of the base current recombines with a given part of the emitter current, thus, the emitter current will also increase.
charge increases
charge is constant
is constant
increasing
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Budapest University of Technology and Economics
Department of Electron Devices
16-10-2014 Microelectronics BSc course, Bipolar transistors 3 © András Poppe & Vladimír Székely, BME-EET 2008-2014 9
Common emitter setup
Input characteristic: Output characteristic:
normal active
saturation
closed
inverse active
saturation
normal active
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Budapest University of Technology and Economics
Department of Electron Devices
16-10-2014 Microelectronics BSc course, Bipolar transistors 3 © András Poppe & Vladimír Székely, BME-EET 2008-2014 10
1)/exp(1)/exp(
1)/exp(1)/exp(
TBCCSTBEESNC
TBCCSITBEESE
UUIUUIAI
UUIAUUII
XUCE
ITCES AUU
1ln0
normal active
saturation
closed
inverse active
saturationThreshold of saturation:UBC = 0
UBE = UCEnormal active
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Budapest University of Technology and Economics
Department of Electron Devices
16-10-2014 Microelectronics BSc course, Bipolar transistors 3 © András Poppe & Vladimír Székely, BME-EET 2008-2014 11
Characteristics of real BJTs: secondary effects
► Parasitic CB diode► Series resistances► Early effect► Operating point dependence of the gain
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Budapest University of Technology and Economics
Department of Electron Devices
16-10-2014 Microelectronics BSc course, Bipolar transistors 3 © András Poppe & Vladimír Székely, BME-EET 2008-2014 12
Effect of the parasitic CB diode
No emitter region opposite to it, thus, in inverse oparation the electrons injected from the collector into the base will be lost: inverse active current gain is worsened.
ITCES AUU
1ln0
inner transistor parasitic junction
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Budapest University of Technology and Economics
Department of Electron Devices
16-10-2014 Microelectronics BSc course, Bipolar transistors 3 © András Poppe & Vladimír Székely, BME-EET 2008-2014 13
Effect of series resistancesBase contact
E C
Where is it exactly?
RBB'
The "inner base" – good approximation: RBB'
B'
B
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Budapest University of Technology and Economics
Department of Electron Devices
16-10-2014 Microelectronics BSc course, Bipolar transistors 3 © András Poppe & Vladimír Székely, BME-EET 2008-2014 14
Effect of series resistancesCollector contact
ICRCC' adds to UCE characteristics can be only on the right hand side of the 1/RCC' line
reduction of RCC' in case of discrete transistors: epitaxial structure (like in case of diodes)
n+ emitter
p basecollector
chip carrier (collector lead)
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Budapest University of Technology and Economics
Department of Electron Devices
16-10-2014 Microelectronics BSc course, Bipolar transistors 3 © András Poppe & Vladimír Székely, BME-EET 2008-2014 15
The Early effect
Backlash: The output voltage influences the input characteristic
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Budapest University of Technology and Economics
Department of Electron Devices
16-10-2014 Microelectronics BSc course, Bipolar transistors 3 © András Poppe & Vladimír Székely, BME-EET 2008-2014 16
The Early effect
![Page 17: Http:// Budapest University of Technology and Economics Department of Electron Devices Microelectronics, BSc course Bipolar transistors 3](https://reader037.vdocument.in/reader037/viewer/2022110116/551c55d1550346a5458b4f72/html5/thumbnails/17.jpg)
Budapest University of Technology and Economics
Department of Electron Devices
16-10-2014 Microelectronics BSc course, Bipolar transistors 3 © András Poppe & Vladimír Székely, BME-EET 2008-2014 17
The Early effectThe Early voltage
C
E
C
CEki I
U
dI
dUr out
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Budapest University of Technology and Economics
Department of Electron Devices
16-10-2014 Microelectronics BSc course, Bipolar transistors 3 © András Poppe & Vladimír Székely, BME-EET 2008-2014 18
Early effect at common base setup
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Budapest University of Technology and Economics
Department of Electron Devices
16-10-2014 Microelectronics BSc course, Bipolar transistors 3 © András Poppe & Vladimír Székely, BME-EET 2008-2014 19
Early effect: the backlash
~exp(UBE/UT)
CB setup CE setup
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Budapest University of Technology and Economics
Department of Electron Devices
16-10-2014 Microelectronics BSc course, Bipolar transistors 3 © András Poppe & Vladimír Székely, BME-EET 2008-2014 20
The Early effect Problem
What is the output resistance of the transistor in common emitter setup is the Early voltage is 80V and the collector current in the operating point is 5mA?
C
Eki I
Ur k
mA
Vrki 16
5
80out out
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Budapest University of Technology and Economics
Department of Electron Devices
16-10-2014 Microelectronics BSc course, Bipolar transistors 3 © András Poppe & Vladimír Székely, BME-EET 2008-2014 21
Op.p. dependence of current gainVoltage dependence: due to the Early effect
BC
B
B
N
BC
N
dU
dw
dw
dA
dU
dA
EE
BB
n
pe Nw
Nw
D
D1
2
2
11
n
Btr L
w
CBBMB Uconstww
CB
BCtre
BC
N
U
wS
dU
dA /)1(2)1(
2
1 '
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Budapest University of Technology and Economics
Department of Electron Devices
16-10-2014 Microelectronics BSc course, Bipolar transistors 3 © András Poppe & Vladimír Székely, BME-EET 2008-2014 22
Op.p. dependence of current gainVoltage dependence: due to the Early effect
Current dependence:
high level