identify that some electrons in solids are shared between atoms and move freely compare...

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Identify that some electrons in solids are shared between atoms and move freely Compare qualitatively the relative number of free electrons that can drift from atom to atom in conductors, semiconductors and insulators presence of an electric field causes the derandomisation of this ‘cloud’ mot E field An atom that doesn’t have the outer energy level filled will try to fill it by bonding - IONIC (gaining or giving electrons) or COVALENT (sharing electrons)

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Page 1: Identify that some electrons in solids are shared between atoms and move freely Compare qualitatively the relative number of free electrons that can drift

Identify that some electrons in solids are shared between atoms

and move freely

Compare qualitatively the relative number of free electrons that can drift from atom to atom in conductors, semiconductors and insulators

The presence of an electric field causes the derandomisation of this ‘cloud’ motion

E field

An atom that doesn’t have the outer energy level filled will try to fill it by bonding -

IONIC (gaining or giving electrons) or COVALENT (sharing electrons)

Page 2: Identify that some electrons in solids are shared between atoms and move freely Compare qualitatively the relative number of free electrons that can drift

Describe the difference between conductors,

insulators and semiconductors in terms of band structures and relative

electrical resistance

Perform an investigation to model the difference between conductors, insulators

and semiconductors in terms of band structures

TableJacaranda p.226

A semiconductor has a smaller energy gap than a conductor and a valence band which is almost full

Atoms in a solid are close enough together for their outer energy levels (valence bands) to overlap. In a conductor, these valence bands are only partly filled and are the conduction bands. In an insulator, the valence bands are FULL and energy is needed to be input for an electron to reach the next level (conduction band).

Practical 12.1Jacaranda p.241

Page 3: Identify that some electrons in solids are shared between atoms and move freely Compare qualitatively the relative number of free electrons that can drift

Identify absences of electrons

in a nearly full band as holes,

and recognise that bothelectrons and holes help to

carry current

Perform an investigation to demonstrate a model for explaining the behaviour of semiconductors,

including the creation of a hole or positive charge on the atom that has lost the electron and

the movement of electrons and holes in opposite directions when an electric field is applied across the

semiconductor

This is because increasing temperature means that thermal energy causes electrons to jump the ‘gap’into the conduction band.

This leaves holes in the valence band, which move opposite to, and slower than, the electron flow.

DO try thisat home!

Page 4: Identify that some electrons in solids are shared between atoms and move freely Compare qualitatively the relative number of free electrons that can drift

Identify that the use ofgermanium in early

transistors is related to lackof ability to produce other

materials of suitable purity

Explain why silicon becamethe preferred raw material

fortransistors

Group 4 elements are the most widely used - they have 4 electrons in the valence band.

Silicon has good semiconducting properties - thermal energy causes some of the valence electrons to jump the gap to the conduction band, leaving holes in the lattice.Although it is more difficult to purify, it is less affected by high temperatures than Germanium because it forms a protective oxide layer when heated, so is more suitable in electronics. It is very common - found in sand.

The valence band is filled by sharing an electron with 4 adjacent atoms (covalent bonding)

Germanium was used in early transistors because it was easy to purify.It is a good semiconductor but it conducts TOO well when hot. It is also rare

Page 5: Identify that some electrons in solids are shared between atoms and move freely Compare qualitatively the relative number of free electrons that can drift

ELECTRON HOLE!

For each impurity atom, oneelectron hole, or positive chargecarrier, is formed. This arrangement has positivecharge so is called ‘p-type’

p-type semiconductors have group 3 impurity atoms substituted in the lattice of group 4 atoms

Describe how ‘doping’ asemiconductor can change

itselectrical properties

Identify differences in p and n-type semiconductors in terms of the relative number of negative

charge carriers and positive holes

‘Dopant’ atoms in the semiconductor lattice can form extra energy levels in the gap - aiding conduction

Doping is placing impurity atoms into the semiconductor crystal lattice to change the conductivity properties

n-type semiconductors have group 5 impurity atoms substituted in the lattice of group 4 atoms

EXTRA ELECTRON!M. Edwards 15/7/02c

Electrons move into the holes, creating new holes that other electronsmove into, which makes other new holes etc.etc.....

For each impurity atom, oneelectron moves to the nextlevel - - the conduction band. This arrangement has excess negativecharge so is called ‘n-type’

For each impurity atom, oneelectron moves to the nextlevel - - the conduction band. This arrangement has excess negativecharge so is called ‘n-type’