Phosphorus Delta-Doping in Germanium Giordano Scappucci1

1School of Physics, University of New South Wales, Sydney, NSW 2052, Australia.

Email: giordano.scappucci@unsw.edu.au

2.

Fig. 1. Schematics and STM characterisation of phosphorus delta-doping of Ge by PH3 in ultra-high

vacuum comprising the three steps of: (a) PH3 adsorption; (b) P incorporation (c) Ge molecular beam epitaxy (d) Atom probe tomography of the -doped layer showing

strong vertical confinement of dopants.

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Fig. 2. Multiple delta-doping to obtain highly doped Ge films. (a) Schematics of the doping process (b) Secondary ions mass spectroscopy of an atomically sharp P profile.

Fig. 3. Resistivity vs. electrically active carrier density throughout all fabricated delta-doped samples

Conclusions

References

28 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)