1

IHW15N120R3

IH-series

Rev. 2.2 2009-11-18

Reverse conducting IGBT with monolithic body diode

Features:• Powerful monolithic body diode with low forward voltage designed for soft commutation only• TrenchStop® technology applications offers: - very tight parameter distribution - high ruggedness, temperature stable behavior - low VCEsat

- easy parallel switching capability due to positive temperature coefficient in VCEsat

• Low EMI• Qualified according to JEDEC J-STD-020 and JESD-022 for target applications• Pb-free lead plating; RoHS compliant• Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/

Applications:• Inductive cooking

G

C

E

TypeTypeTypeType VVVV†Š†Š†Š†Š IIII†††† VVVV†ŠÙÈÚ, †ŠÙÈÚ, †ŠÙÈÚ, †ŠÙÈÚ, TTTTÝÎ=25°CÝÎ=25°CÝÎ=25°CÝÎ=25°C TTTTÝÎÑÈàÝÎÑÈàÝÎÑÈàÝÎÑÈà MarkingMarkingMarkingMarking PackagePackagePackagePackage

IHW15N120R3 1200V 15A 1.48V 175°C H15N120R3 PG-TO247-3

Maximum ratings

Parameter Symbol Value Unit

Collector-emitter voltage V†Š 1200 V

DC collector current, limited by TÝÎÑÈàT† = 25°CT† = 100°C

I† 30.015.0

A

Pulsed collector current, tÔ limited by TÝÎÑÈà I†ÔÛÐÙ 45.0 A

Turn off safe operating area V†Š ù 1200V, TÝÎ ù 175°C - 45.0 A

Diode forward current, limited by TÝÎÑÈàT† = 25°CT† = 100°C

IΠ30.015.0

A

Diode pulsed current, tÔ limited by TÝÎÑÈà IŒÔÛÐÙ 45.0 A

Gate-emitter voltageTransient Gate-emitter voltage (tÔ = 10µs, D < 0.010) V•Š ±20

±25 V

Power dissipation T† = 25°CPower dissipation T† = 100°C PÚÓÚ 254.0

127.0W

Operating junction temperature TÝÎ -40...+175 °C

Storage temperature TÙÚÃ -55...+175 °C

Soldering temperature,wavesoldering 1.6 mm (0.063 in.) from case for 10s 260 °C

Mounting torque, M3 screwMaximum of mounting processes: 3 M 0.6 Nm

Thermal Resistance

Parameter Symbol Conditions Max. Value Unit

Characteristic

IGBT thermal resistance,junction - case RÚÌñÎ-Êò 0.59 K/W

Diode thermal resistance,junction - case RÚÌñÎ-Êò 0.59 K/W

Thermal resistancejunction - ambient

RÚÌñÎ-Èò 40 K/W

Electrical Characteristic, at Electrical Characteristic, at Electrical Characteristic, at Electrical Characteristic, at TTTTÝÎ = 25°C, unless otherwise specifiedÝÎ = 25°C, unless otherwise specifiedÝÎ = 25°C, unless otherwise specifiedÝÎ = 25°C, unless otherwise specified

Value

min. typ. max.Parameter Symbol Conditions Unit

Static Characteristic

Collector-emitter breakdown voltage Vñ…çò†Š» V•Š = 0V, I† = 0.50mA 1200 - - V

Collector-emitter saturation voltage V†ŠÙÈÚ

V•Š = 15.0V, I† = 15.0ATÝÎ = 25°CTÝÎ = 125°CTÝÎ = 175°C

---

1.481.701.80

1.70--

V

Diode forward voltage VŒ

V•Š = 0V, IŒ = 15.0ATÝÎ = 25°CTÝÎ = 125°CTÝÎ = 175°C

---

1.551.701.80

1.75-

V

Gate-emitter threshold voltage V•ŠñÚÌò I† = 0.40mA, V†Š = V•Š 5.1 5.8 6.4 V

Zero gate voltage collector current I†Š»V†Š = 1200V, V•Š = 0VTÝÎ = 25°CTÝÎ = 175°C

--

--

100.02500.0

µA

Gate-emitter leakage current I•Š» V†Š = 0V, V•Š = 20V - - 100 nA

Transconductance gËÙ V†Š = 20V, I† = 15.0A - 13.9 - S

Integrated gate resistor r• none Â

Electrical Characteristic, at Electrical Characteristic, at Electrical Characteristic, at Electrical Characteristic, at TTTTÝÎ = 25°C, unless otherwise specifiedÝÎ = 25°C, unless otherwise specifiedÝÎ = 25°C, unless otherwise specifiedÝÎ = 25°C, unless otherwise specified

Value

min. typ. max.Parameter Symbol Conditions Unit

Dynamic Characteristic

Input capacitance CÍþÙ - 1165 -

Output capacitance CÓþÙ - 40 -

Reverse transfer capacitance CØþÙ - 32 -

V†Š = 25V, V•Š = 0V, f = 1MHz pF

Gate charge Q• V†† = 960V, I† = 15.0A, V•Š = 15V - 165.0 - nC

Internal emitter inductancemeasured 5mm (0.197 in.) fromcase

LŠ - 13.0 - nH

1

IHW15N120R3

IH-series

Rev. 2.2 2009-11-18

Switching Characteristic, Inductive Load, at Switching Characteristic, Inductive Load, at Switching Characteristic, Inductive Load, at Switching Characteristic, Inductive Load, at TTTTÝÎ = 25°CÝÎ = 25°CÝÎ = 25°CÝÎ = 25°C

Value

min. typ. max.Parameter Symbol Conditions Unit

IGBT Characteristic

Turn-off delay time tÁñÓËËò - 300 - ns

Fall time tË - 46 - ns

Turn-off energy EÓËË - 0.70 - mJ

TÝÎ = 25°C,V†† = 600V, I† = 15.0A,V•Š = 0.0/15.0V,r• = 14.6Â, Lÿ = 180nH,Cÿ = 39pFLÿ, Cÿ from Fig. EEnergy losses include “tail” anddiode reverse recovery.

Switching Characteristic, Inductive Load, at Switching Characteristic, Inductive Load, at Switching Characteristic, Inductive Load, at Switching Characteristic, Inductive Load, at TTTTÝÎ = 175°CÝÎ = 175°CÝÎ = 175°CÝÎ = 175°C

Value

min. typ. max.Parameter Symbol Conditions Unit

IGBT Characteristic

Turn-off delay time tÁñÓËËò - 370 - ns

Fall time tË - 90 - ns

Turn-off energy EÓËË - 1.25 - mJ

TÝÎ = 175°C,V†† = 600V, I† = 15.0A,V•Š = 0.0/15.0V,r• = 14.6Â, Lÿ = 180nH,Cÿ = 39pFLÿ, Cÿ from Fig. EEnergy losses include “tail” anddiode reverse recovery.

1

IHW15N120R3

IH-series

Rev. 2.2 2009-11-18

Figure 1.Figure 1.Figure 1.Figure 1. Collector current as a function of switchingCollector current as a function of switchingCollector current as a function of switchingCollector current as a function of switchingfrequencyfrequencyfrequencyfrequency(TÎù175°C, D=0.5, V†Š=600V, V•Š=15/0V,R•=14,6Â)

f, SWITCHING FREQUENCY [kHz]

I†, COLLECTOR CURRENT [A]

1 10 100 10000

10

20

30

40

50

T†=80°

T†=110°

Figure 2.Figure 2.Figure 2.Figure 2. Forward bias safe operating areaForward bias safe operating areaForward bias safe operating areaForward bias safe operating area(D=0, T†=25°C, TÎù175°C; V•Š=15V)

V†Š, COLLECTOR-EMITTER VOLTAGE [V]

I†, COLLECTOR CURRENT [A]

1 10 100 10000.1

1

10

100

tÔ=1µs

20µs

50µs

200µs

1ms

10ms

DC

Figure 3.Figure 3.Figure 3.Figure 3. Power dissipation as a function of casePower dissipation as a function of casePower dissipation as a function of casePower dissipation as a function of casetemperaturetemperaturetemperaturetemperature(TÎù175°C)

T†, CASE TEMPERATURE [°C]

PÚÓÚ, POWER DISSIPATION [W]

25 50 75 100 125 150 1750

50

100

150

200

250

300

Figure 4.Figure 4.Figure 4.Figure 4. Collector current as a function of caseCollector current as a function of caseCollector current as a function of caseCollector current as a function of casetemperaturetemperaturetemperaturetemperature(V•Šú15V, TÎù175°C)

T†, CASE TEMPERATURE [°C]

I†, COLLECTOR CURRENT [A]

25 50 75 100 125 150 1750

10

20

30

40

1

IHW15N120R3

IH-series

Rev. 2.2 2009-11-18

Figure 5.Figure 5.Figure 5.Figure 5. Typical output characteristicTypical output characteristicTypical output characteristicTypical output characteristic(TÎ=25°C)

V†Š, COLLECTOR-EMITTER VOLTAGE [V]

I†, COLLECTOR CURRENT [A]

0 1 2 30

15

30

45

V•Š=20V

17V

15V

13V

11V

9V

7V

5V

Figure 6.Figure 6.Figure 6.Figure 6. Typical output characteristicTypical output characteristicTypical output characteristicTypical output characteristic(TÎ=175°C)

V†Š, COLLECTOR-EMITTER VOLTAGE [V]

I†, COLLECTOR CURRENT [A]

0 1 2 3 40

15

30

45

V•Š=20V

17V

15V

13V

11V

9V

7V

5V

Figure 7.Figure 7.Figure 7.Figure 7. Typical transfer characteristicTypical transfer characteristicTypical transfer characteristicTypical transfer characteristic(V†Š=20V)

V•Š, GATE-EMITTER VOLTAGE [V]

I†, COLLECTOR CURRENT [A]

2 4 6 8 10 120

15

30

45

TÎ=25°CTÎ=175°C

Figure 8.Figure 8.Figure 8.Figure 8. Typical collector-emitter saturation voltageTypical collector-emitter saturation voltageTypical collector-emitter saturation voltageTypical collector-emitter saturation voltageas a function of junction temperatureas a function of junction temperatureas a function of junction temperatureas a function of junction temperature(V•Š=15V)

TÎ, JUNCTION TEMPERATURE [°C]

V†ŠñÙÈÚò, COLLECTOR-EMITTER SATURATION [A]

0 25 50 75 100 125 150 1751.0

1.5

2.0

2.5

3.0

I†=7.5AI†=15AI†=30A

1

IHW15N120R3

IH-series

Rev. 2.2 2009-11-18

Figure 9.Figure 9.Figure 9.Figure 9. Typical switching times as a function ofTypical switching times as a function ofTypical switching times as a function ofTypical switching times as a function ofcollector currentcollector currentcollector currentcollector current(ind. load, TÎ=175°C, V†Š=600V,V•Š=15/0V, R•=14,6Â, test circuit in Fig.E)

I†, COLLECTOR CURRENT [A]

t, SWITCHING TIM

ES [ns]

0 5 10 15 20 25 3010

100

1000

tÁñÓËËòtË

Figure 10.Figure 10.Figure 10.Figure 10. Typical switching times as a function ofTypical switching times as a function ofTypical switching times as a function ofTypical switching times as a function ofgate resistorgate resistorgate resistorgate resistor(ind. load, TÎ=175°C, V†Š=600V,V•Š=15/0V, I†=15A, test circuit in Fig. E)

R•, GATE RESISTOR [Â]

t, SWITCHING TIM

ES [ns]

10 20 30 40 5010

100

1000

tÁñÓËËòtË

Figure 11.Figure 11.Figure 11.Figure 11. Typical switching times as a function ofTypical switching times as a function ofTypical switching times as a function ofTypical switching times as a function ofjunction temperaturejunction temperaturejunction temperaturejunction temperature(ind. load, V†Š=600V, V•Š=15/0V, I†=15A,R•=14,6Â, test circuit in Fig. E)

TÎ, JUNCTION TEMPERATURE [°C]

t, SWITCHING TIM

ES [ns]

25 50 75 100 125 150 17510

100

1000

tÁñÓËËòtË

Figure 12.Figure 12.Figure 12.Figure 12. Gate-emitter threshold voltage as aGate-emitter threshold voltage as aGate-emitter threshold voltage as aGate-emitter threshold voltage as afunction of junction temperaturefunction of junction temperaturefunction of junction temperaturefunction of junction temperature(I†=0.4mA)

TÎ, JUNCTION TEMPERATURE [°C]

V•ŠñÚÌò, GATE-EMITTER THRESHOLD VOLTAGE [V]

0 25 50 75 100 125 150 1752

3

4

5

6

7

min.typ.max.

1

IHW15N120R3

IH-series

Rev. 2.2 2009-11-18

Figure 13.Figure 13.Figure 13.Figure 13. Typical switching energy losses as aTypical switching energy losses as aTypical switching energy losses as aTypical switching energy losses as afunction of collector currentfunction of collector currentfunction of collector currentfunction of collector current(ind. load, TÎ=175°C, V†Š=600V,V•Š=15/0V, R•=14,6Â, test circuit in Fig.E)

I†, COLLECTOR CURRENT [A]

E, SWITCHING ENERGY LOSSES [mJ]

0 5 10 15 20 25 300.0

0.5

1.0

1.5

2.0

2.5

EÓËË

Figure 14.Figure 14.Figure 14.Figure 14. Typical switching energy losses as aTypical switching energy losses as aTypical switching energy losses as aTypical switching energy losses as afunction of gate resistorfunction of gate resistorfunction of gate resistorfunction of gate resistor(ind. load, TÎ=175°C, V†Š=600V,V•Š=15/0V, I†=15A, test circuit in Fig. E)

R•, GATE RESISTOR [Â]

E, SWITCHING ENERGY LOSSES [mJ]

10 20 30 40 501.0

1.1

1.2

1.3

1.4

1.5

1.6

EÓËË

Figure 15.Figure 15.Figure 15.Figure 15. Typical switching energy losses as aTypical switching energy losses as aTypical switching energy losses as aTypical switching energy losses as afunction of junction temperaturefunction of junction temperaturefunction of junction temperaturefunction of junction temperature(ind load, V†Š=600V, V•Š=15/0V, I†=15A,R•=14,6Â, test circuit in Fig. E)

TÎ, JUNCTION TEMPERATURE [°C]

E, SWITCHING ENERGY LOSSES [mJ]

25 50 75 100 125 150 1750.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

EÓËË

Figure 16.Figure 16.Figure 16.Figure 16. Typical switching energy losses as aTypical switching energy losses as aTypical switching energy losses as aTypical switching energy losses as afunction of collector emitter voltagefunction of collector emitter voltagefunction of collector emitter voltagefunction of collector emitter voltage(ind. load, TÎ=175°C, V•Š=15/0V, I†=15A,R•=14,6Â, test circuit in Fig. E)

V†Š, COLLECTOR-EMITTER VOLTAGE [V]

E, SWITCHING ENERGY LOSSES [mJ]

400 500 600 700 800 900 10000.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

EÓËË

1

IHW15N120R3

IH-series

Rev. 2.2 2009-11-18

Figure 17.Figure 17.Figure 17.Figure 17. Typical turn off switching energy loss forTypical turn off switching energy loss forTypical turn off switching energy loss forTypical turn off switching energy loss forsoft switchingsoft switchingsoft switchingsoft switching(ind load, V†Š=600V, V•Š=15/0V, I†=15A,R•=14,6Â, test circuit in Fig. E)

dv/dt, VOLTAGE SLOPE [V/µs]

E, SWITCHING ENERGY LOSSES [mJ]

100 1000 1E+40.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

TÎ=25°CTÎ=175°C

Figure 18.Figure 18.Figure 18.Figure 18. Typical gate chargeTypical gate chargeTypical gate chargeTypical gate charge(I†=15A)

Q•Š, GATE CHARGE [nC]

V•Š, GATE-EMITTER VOLTAGE [V]

0 25 50 75 100 125 150 1750

2

4

6

8

10

12

14

16

240V960V

Figure 19.Figure 19.Figure 19.Figure 19. Typical capacitance as a function ofTypical capacitance as a function ofTypical capacitance as a function ofTypical capacitance as a function ofcollector-emitter voltagecollector-emitter voltagecollector-emitter voltagecollector-emitter voltage(V•Š=0V, f=1MHz)

V†Š, COLLECTOR-EMITTER VOLTAGE [V]

C, CAPACITANCE [pF]

0 10 20 3010

100

1000

CÍÙÙCÓÙÙCØÙÙ

Figure 20.Figure 20.Figure 20.Figure 20. IGBT transient thermal impedanceIGBT transient thermal impedanceIGBT transient thermal impedanceIGBT transient thermal impedance(D=tÔ/T)

tÔ, PULSE WIDTH [s]

ZÚÌœ†, TRANSIENT THERMAL IMPEDANCE [K/W

]

1E-6 1E-5 1E-4 0.001 0.01 0.1 10.001

0.01

0.1

1

D=0.5

0.2

0.1

0.05

0.02

0.01

single pulse

i: rÍ[K/W]: Í[s]:

1 4.6E-3 2.4E-5

2 0.1431 3.3E-4

3 0.2097 3.1E-3

4 0.2185 0.01636424

5 0.01204762 0.1753518

6 1.9E-3 1.713276

7 2.1E-4 4.662402

τ

1

IHW15N120R3

IH-series

Rev. 2.2 2009-11-18

Figure 21.Figure 21.Figure 21.Figure 21. Diode transient thermal impedance as aDiode transient thermal impedance as aDiode transient thermal impedance as aDiode transient thermal impedance as afunction of pulse widthfunction of pulse widthfunction of pulse widthfunction of pulse width(D=tÔ/T)

tÔ, PULSE WIDTH [s]

ZÚÌœ†, TRANSIENT THERMAL IMPEDANCE [K/W

]

1E-6 1E-5 1E-4 0.001 0.01 0.1 10.001

0.01

0.1

1

D=0.5

0.2

0.1

0.05

0.02

0.01

single pulse

i: rÍ[K/W]: Í[s]:

1 4.6E-3 2.4E-5

2 0.1431 3.3E-4

3 0.2097 3.1E-3

4 0.2185 0.01636424

5 0.012 0.1753518

6 1.9E-3 1.713276

7 2.1E-4 4.662402

τ

Figure 22.Figure 22.Figure 22.Figure 22. Typical diode forward current as aTypical diode forward current as aTypical diode forward current as aTypical diode forward current as afunction of forward voltagefunction of forward voltagefunction of forward voltagefunction of forward voltage

VŒ, FORWARD VOLTAGE [V]

IŒ, FORWARD CURRENT [A]

0 1 2 30

15

30

45

TÎ=25°CTÎ=175°C

Figure 23.Figure 23.Figure 23.Figure 23. Typical diode forward voltage as aTypical diode forward voltage as aTypical diode forward voltage as aTypical diode forward voltage as afunction of junction temperaturefunction of junction temperaturefunction of junction temperaturefunction of junction temperature

TÎ, JUNCTION TEMPERATURE [°C]

VŒ, FORWARD VOLTAGE [V]

0 25 50 75 100 125 150 1751.0

1.5

2.0

2.5

I†=7.5AI†=15AI†=30A

1

IHW15N120R3

IH-series

Rev. 2.2 2009-11-18

1

IHW15N120R3

IH-series

Rev. 2.2 2009-11-18

Published byInfineon Technologies AG81726 Munich, Germany81726 München, Germany© 2009 Infineon Technologies AGAll Rights Reserved.

Legal DisclaimerThe information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.With respect to any examples or hints given herein, any typical values stated herein and/or any information regardingthe application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,including without limitation, warranties of non-infringement of intellectual property rights of any third party.

InformationFor further information on technology, delivery terms and conditions and prices, please contact the nearest InfineonTechnologies Office (www.infineon.com).

WarningsDue to technical requirements, components may contain dangerous substances. For information on the types inquestion, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used inlife-support devices or systems only with the express written approval of Infineon Technologies, if a failure of suchcomponents can reasonably be expected to cause the failure of that life-support device or system or to affect the safetyor effectiveness of that device or system. Life support devices or systems are intended to be implanted in the humanbody or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that thehealth of the user or other persons may be endangered.

1

IHW15N120R3

IH-series

Rev. 2.2 2009-11-18