ikw75n60t_2_8

IKW75N60TTRENCHSTOP Series q

IFAG IPC TD VLS 1 Rev. 2.8 2013-12-05

Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft,fast recovery anti-parallel Emitter Controlled HE diode

Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175C Short circuit withstand time 5s Positive temperature coefficient in VCE(sat) very tight parameter distribution high ruggedness, temperature stable behaviour very high switching speed Low EMI Very soft, fast recovery anti-parallel Emitter Controlled HE diode Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Applications: Frequency Converters Uninterrupted Power Supply

Type VCE IC VCE(sat),Tj=25C Tj,max Marking Package

IKW75N60T 600V 75A 1.5V 175C K75T60 PG-TO247-3

Maximum Ratings

Parameter Symbol Value Unit

Collector-emitter voltage, Tj 25C VC E 600 V

DC collector current, limited by TjmaxTC = 25C

IC802)

75

A

TC = 100C

Pulsed collector current, tp limited by Tjmax IC p u l s 225

Turn off safe operating area VCE = 600V, Tj = 175C, tp = 1s - 225

Diode forward current, limited by TjmaxTC = 25C IF

802)

75TC = 100CDiode pulsed current, tp limited by Tjmax IF p u l s 225Gate-emitter voltage VG E 20 V

Short circuit withstand time3)

VGE = 15V, VCC 400V, Tj 150CtS C 5 s

Power dissipation TC = 25C P t o t 428 W

Operating junction temperature T j -40...+175CStorage temperature T s t g -55...+150

Soldering temperature, 1.6mm (0.063 in.) from case for 10s T s o l d 260

1) J-STD-020 and JESD-0222) Value limited by bondwire3) Allowed number of short circuits: 1s.

G

C

E

PG-TO247-3



Thermal Resistance

Parameter Symbol Conditions Max. Value Unit

CharacteristicIGBT thermal resistance,junction case

R t h J C 0.35 K/W

Diode thermal resistance,junction case

R t h J C D 0.6

Thermal resistance,junction ambient

R t h J A 40

Electrical Characteristic, at Tj = 25 C, unless otherwise specified

Parameter Symbol ConditionsValue

Unitmin. Typ. max.

Static CharacteristicCollector-emitter breakdown voltage V ( B R ) C E S VG E=0V, IC=0.2mA 600 - - VCollector-emitter saturation voltage VC E ( s a t ) VG E = 15V, IC=75A

T j=25CT j=175C

--

1.51.9

2.0-

Diode forward voltage VF VG E=0V, IF=75AT j=25CT j=175C

--

1.651.6

2.0-

Gate-emitter threshold voltage VG E ( t h ) IC=1.2mA,VC E=VG E 4.1 4.9 5.7Zero gate voltage collector current IC E S VC E=600V ,

VG E=0VT j=25CT j=175C

--

--

405000

A

Gate-emitter leakage current IG E S VC E=0V,VG E=20V - - 100 nATransconductance g f s VC E=20V, IC=75A - 41 - SIntegrated gate resistor RG i n t -

Dynamic CharacteristicInput capacitance C i s s VC E=25V,

VG E=0V,f=1MHz

- 4620 - pFOutput capacitance Co s s - 288 -Reverse transfer capacitance C r s s - 137 -Gate charge QG a t e VC C=480V, IC=75A

VG E=15V- 470 - nC

Internal emitter inductancemeasured 5mm (0.197 in.) from case

LE - 13 - nH

Short circuit collector currentAllowed number of short circuits: 1s.

IC ( S C ) VG E=15V, tS C5sVC C = 400V,T j 150C

- 690 - A



Switching Characteristic, Inductive Load, at Tj=25 C


Unitmin. typ. max.

IGBT CharacteristicTurn-on delay time td ( o n ) T j=25C,

VC C=400V, I C=75A,VG E=0/15V,rG=5 , L =100nH,C=39pF

L , C f rom Fig. EEnergy losses includetail and diode reverserecovery.

- 33 - nsRise time t r - 36 -Turn-off delay time td ( o f f ) - 330 -Fall time t f - 35 -Turn-on energy Eo n - 2.0 - mJTurn-off energy Eo f f - 2.5 -Total switching energy E t s - 4.5 -Anti-Parallel Diode CharacteristicDiode reverse recovery time t r r T j=25C,

VR=400V, IF=75A,diF /d t=1460A/s

- 121 - nsDiode reverse recovery charge Q r r - 2.4 - CDiode peak reverse recovery current I r r m - 38.5 - ADiode peak rate of fall of reverserecovery current during tb

di r r /d t - 921 - A/s

Switching Characteristic, Inductive Load, at Tj=175 C


Unitmin. typ. max.

IGBT CharacteristicTurn-on delay time td ( o n ) T j=175C,

VC C=400V, I C=75A,VG E=0/15V,rG=5 , L =100nH,C=39pF

L , C f rom Fig. EEnergy losses includetail and diode reverserecovery.

- 32 - nsRise time t r - 37 -Turn-off delay time td ( o f f ) - 363 -Fall time t f - 38 -Turn-on energy Eo n - 2.9 - mJTurn-off energy Eo f f - 2.9 -Total switching energy E t s - 5.8 -Anti-Parallel Diode CharacteristicDiode reverse recovery time t r r T j=175C

VR=400V, IF=75A,diF /d t=1460A/s

- 182 - nsDiode reverse recovery charge Q r r - 5.8 - CDiode peak reverse recovery current I r r m - 56.2 - ADiode peak rate of fall of reverserecovery current during tb

di r r /d t - 1013 - A/s



I C,C

OLL

EC

TOR

CU

RR

EN

T

10Hz 100Hz 1kHz 10kHz 100kHz0A

50A

100A

150A

200A

TC=110C

TC=80C

I C,C

OLL

EC

TOR

CU

RR

EN

T

f, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGEFigure 1. Collector current as a function of

switching frequency(Tj 175C, D = 0.5, VCE = 400V,VGE = 0/15V, rG = 5)

Figure 2. Safe operating area(D = 0, TC = 25C, Tj 175C;VGE=0/15V)

Pto

t,P

OW

ER

DIS

SIPA

TIO

N

25C 50C 75C 100C 125C 150C0W

50W

100W

150W

200W

250W

300W

350W

400W

I C,C

OLL

EC

TOR

CU

RR

EN

T

25C 75C 125C0A

30A

60A

90A

120A

TC, CASE TEMPERATURE TC, CASE TEMPERATUREFigure 3. Power dissipation as a function of

case temperature(Tj 175C)

Figure 4. DC Collector current as a functionof case temperature(VGE 15V, Tj 175C)

Ic

Ic



I C,C

OLL

EC

TOR

CU

RR

EN

T

0V 1V 2V 3V0A

30A

60A

90A

120A

15V

7V

9V

11V

13V

VGE=20V

I C,C

OLL

EC

TOR

CU

RR

EN

T

0V 1V 2V 3V0A

30A

60A

90A

120A

15V

7V

9V

11V

13V

VGE=20V

VCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGEFigure 5. Typical output characteristic

(Tj = 25C)Figure 6. Typical output characteristic

(Tj = 175C)

I C,C

OLL

EC

TOR

CU

RR

EN

T

0V 2V 4V 6V 8V0A

20A

40A

60A

80A

25C

T J=175C

VC

E(sa

t),C

OLL

EC

TOR

-EM

ITT

SAT

UR

ATI

ON

VO

LTA

GE

0C 50C 100C 150C0.0V

0.5V

1.0V

1.5V

2.0V

2.5V

IC=75A

IC=150A

IC=37.5A

VGE, GATE-EMITTER VOLTAGE TJ, JUNCTION TEMPERATUREFigure 7. Typical transfer characteristic

(VCE=20V)Figure 8. Typical collector-emitter

saturation voltage as a function ofjunction temperature(VGE = 15V)



t,S

WIT

CH

ING

TIM

ES

0A 40A 80A 120A10ns

100ns

t r

td(on)

t f

td(off)

t,S

WIT

CH

ING

TIM

ES

10ns

100ns

t r

td(on)

t f

td(off)

IC, COLLECTOR CURRENT RG, GATE RESISTORFigure 9. Typical switching times as a

function of collector current(inductive load, TJ=175C,VCE = 400V, VGE = 0/15V, rG = 5, Dynamic test circuit in Figure E)

Figure 10. Typical switching times as afunction of gate resistor(inductive load, TJ = 175C,VCE= 400V, VGE = 0/15V, IC = 75A,Dynamic test circuit in Figure E)

t,S

WIT

CH

ING

TIM

ES

25C 50C 75C 100C 125C 150C

100ns

t r

td(on)

t f

td(off)

VG

E(th

),G

ATE

-EM

ITT

TRS

HO

LDV

OLT

AGE

-50C 0C 50C 100C 150C0V

1V

2V

3V

4V

5V

6V

7V

min.

typ.max.

TJ, JUNCTION TEMPERATURE TJ, JUNCTION TEMPERATUREFigure 11. Typical switching times as a

function of junction temperature(inductive load, VCE = 400V,VGE = 0/15V, IC = 75A, rG=5, Dynamic test circuit in Figure E)

Figure 12. Gate-emitter threshold voltage asa function of junction temperature(IC = 1.2mA)



E,S

WIT

CH

ING

EN

ER

GY

LOS

SES

0A 20A 40A 60A 80A 100A 120A 140A0.0mJ

4.0mJ

8.0mJ

12.0mJ

Ets*

Eoff

*) Eon and Ets include lossesdue to diode recovery

Eon*

E,S

WIT

CH

ING

EN

ER

GY

LOS

SES

0.0mJ

2.0mJ

4.0mJ

6.0mJ

8.0mJ E ts*

E off

*) E on and E ts include losses

due to diode recovery

E on*

IC, COLLECTOR CURRENT RG, GATE RESISTORFigure 13. Typical switching energy losses

as a function of collector current(inductive load, TJ = 175C,VCE = 400V, VGE = 0/15V, rG = 5, Dynamic test circuit in Figure E)

Figure 14. Typical switching energy lossesas a function of gate resistor(inductive load, TJ = 175C,VCE = 400V, VGE = 0/15V, IC = 75A,Dynamic test circuit in Figure E)

E,S

WIT

CH

ING

EN

ER

GY

LOS

SES

25C 50C 75C 100C 125C 150C0.0mJ

1.0mJ

2.0mJ

3.0mJ

4.0mJ

5.0mJEts*

Eoff

*) Eon and Ets include lossesdue to diode recovery

Eon*

E,S

WIT

CH

ING

EN

ER

GY

LOS

SES

300V 350V 400V 450V 500V 550V0mJ

2mJ

4mJ

6mJ

8mJ

E ts*

Eon*

*) E on and E ts include losses

due to diode recovery

Eoff

TJ, JUNCTION TEMPERATURE VCE, COLLECTOR-EMITTER VOLTAGEFigure 15. Typical switching energy losses

as a function of junctiontemperature(inductive load, VCE = 400V,VGE = 0/15V, IC = 75A, rG = 5, Dynamic test circuit in Figure E)

Figure 16. Typical switching energy lossesas a function of collector emittervoltage(inductive load, TJ = 175C,VGE = 0/15V, IC = 75A, rG = 5, Dynamic test circuit in Figure E)



VG

E,G

ATE

-EM

ITTE

RV

OLT

AG

E

0nC 100nC 200nC 300nC 400nC0V

5V

10V

15V

480V

120V

c,C

AP

AC

ITA

NC

E

0V 10V 20V

100pF

1nF

C rss

C oss

C iss

QGE, GATE CHARGE VCE, COLLECTOR-EMITTER VOLTAGEFigure 17. Typical gate charge

(IC=75 A)Figure 18. Typical capacitance as a function

of collector-emitter voltage(VGE=0V, f = 1 MHz)

I C(s

c),s

hort

circ

uitC

OLL

EC

TOR

CU

RR

EN

T

0

250

500

750

1000

12 13 14 15 16 17 18 19 20

t SC,S

HO

RT

CIR

CU

ITW

ITH

STA

ND

TIM

E

10V 11V 12V 13V 14V0s

2s

4s

6s

8s

10s

12s

VGE, GATE-EMITTER VOLTAGE VGE, GATE- EMITTER VOLTAGEFigure 19. Typical short circuit collector

current as a function of gate-emitter voltage(VCE 400V, Tj 150C)

Figure 20. Short circuit withstand time as afunction of gate-emitter voltage(VCE=400V, start at TJ=25C,TJmax



Z thJ

C,T

RA

NS

IEN

TTH

ER

MA

LIM

PE

DA

NC

E

1s 10s 100s 1ms 10ms 100ms10 -3K/W

10 -2K/W

10 -1K/W

single pulse

0.010.02

0.05

0.1

0.2

D=0.5

Z thJ

C,T

RA

NS

IEN

TTH

ER

MA

LIM

PE

DA

NC

E

100ns 1s 10s 100s 1ms 10ms100ms

10 -2K/W

10 -1K/W

single pulse

0.01

0.02

0.05

0.1

0.2

D=0.5

tP, PULSE WIDTH tP, PULSE WIDTHFigure 21. IGBT transient thermal

impedance(D = tp / T)

Figure 22. Diode transient thermalimpedance as a function of pulsewidth(D=tP/T)

t rr,R

EV

ER

SER

EC

OVE

RY

TIM

E

1000A/s 1500A/s0ns

50ns

100ns

150ns

200ns

TJ=25C

TJ=175C

Qrr,R

EV

ER

SE

RE

CO

VE

RY

CH

ARG

E

1000A/s 1500A/s0C

1C

2C

3C

4C

5C

TJ=25C

TJ=175C

diF/dt, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPEFigure 23. Typical reverse recovery time as

a function of diode current slope(VR=400V, IF=75A,Dynamic test circuit in Figure E)

Figure 24. Typical reverse recovery chargeas a function of diode currentslope(VR = 400V, IF =75A,Dynamic test circuit in Figure E)

R , ( K / W ) , ( s ) 0.1968 0.1155040.0733 0.0093400.0509 0.0008230.0290 0.000119

C 1=1 /R 1

R 1 R2

C 2=2 /R 2

R , ( K / W ) , ( s ) 0.1846 0.1103730.1681 0.0155430.1261 0.0012390.0818 0.0001200.04 0.000008

C1=1/R1

R1 R2

C2=2/R2



I rr,R

EV

ER

SE

RE

CO

VE

RY

CU

RR

EN

T

1000A/s 1500A/s0A

10A

20A

30A

40A

50A

60A

T J=25C

TJ=175C

dirr/d

t,D

IOD

EP

EAK

RAT

EO

FFA

LLO

FR

EVE

RS

ER

EC

OV

ER

YC

UR

RE

NT

1000A/s 1500A/s0A/s

-200A/s

-400A/s

-600A/s

-800A/s

-1000A/s

-1200A/s

TJ=25C

TJ=175C

diF/dt, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPEFigure 25. Typical reverse recovery current

as a function of diode currentslope(VR = 400V, IF = 75A,Dynamic test circuit in Figure E)

Figure 26. Typical diode peak rate of fall ofreverse recovery current as afunction of diode current slope(VR=400V, IF=75A,Dynamic test circuit in Figure E)

I F,F

OR

WA

RD

CU

RR

EN

T

0V 1V 2V0A

50A

100A

150A

200A

175C

TJ=25C

VF,

FOR

WA

RD

VO

LTAG

E

0C 50C 100C 150C0.0V

0.5V

1.0V

1.5V

2.0V

75A

IF=150A

37.5A

VF, FORWARD VOLTAGE TJ, JUNCTION TEMPERATUREFigure 27. Typical diode forward current as

a function of forward voltageFigure 28. Typical diode forward voltage as a

function of junction temperature



Ir r m

90% Ir r m

10% Ir r m

di /dtF

tr r

IF

i,v

tQS QF

tS

tF

VR

di /dtr r

Q =Q Qr r S F

+t =t tr r S F

+

Figure C. Definition of diodesswitching characteristics

p(t)1 2 n

T (t)j

11

22

nn

TC

r r

r

r

rr

Figure D. Thermal equivalentcircuit

Figure A. Definition of switching times

Figure B. Definition of switching losses



Published byInfineon Technologies AG81726 Munich, Germany 2013 Infineon Technologies AGAll Rights Reserved.

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions orcharacteristics. With respect to any examples or hints given herein, any typical values stated herein and/orany information regarding the application of the device, Infineon Technologies hereby disclaims any and allwarranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectualproperty rights of any third party.

InformationFor further information on technology, delivery terms and conditions and prices, please contact the nearestInfineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on thetypes in question, please contact the nearest Infineon Technologies Office.The Infineon Technologies component described in this Data Sheet may be used in life-support devices orsystems and/or automotive, aviation and aerospace applications or systems only with the express writtenapproval of Infineon Technologies, if a failure of such components can reasonably be expected to cause thefailure of that life-support, automotive, aviation and aerospace device or system or to affect the safety oreffectiveness of that device or system. Life support devices or systems are intended to be implanted in thehuman body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonableto assume that the health of the user or other persons may be endangered.

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