in situ biasing & heating solutions for tem … · nano-chip as a functionalized sample carrier...
TRANSCRIPT
L I G H T N I N G F E AT U R E S
E x t re m e S t a b i l i t y.
S u b Å n g s t ro m R e s o l u t i o n .
F o u r- P o i n t - P ro b e M e a s u re m e n t s .
D o u b l e T i l t .
T H E L I G H T N I N G S E R I E S
O b s e r v e t h e re a l - t i m e
d y n a m i c s o f m a t e r i a l s
u n d e r e l e c t r i c a l a n d
h e a t i n g s t i m u l i .
IN SITU BIASING & HEATING SOLUTIONS FOR TEM PLATFORMS
Solutions for In Situ Microscopy
Lightning Series - In Situ Biasing & Heating Solutions for TEM platforms 22
Solutions for In Situ MicroscopyIN SITU TEM WORKFLOWTURN YOUR TEM INTO A NANO-LAB
PREPARING THE SAMPLES
LOADING THE NANO-CHIP
RUNNING IN SITU EXPERIMENT
SETTING THE PARAMETERS
Samples of all sizes – from nanowires to lamellas - are prepared directly onto the Nano-Chip using traditional preparation techniques. The
Nano-Chip as a functionalized sample carrier has metal electrodes for applying the biasing stimuli and a metal spiral sandwiched between
silicon nitride for applying the heating stimuli to the sample.
After lifting the 4 or 8 biasing/heating needles at the tip of the holder, the Nano-Chip is easily loaded into the sample holder. The needles are lowered onto the metallic contact pads to enable the accurate and reliable biasing/heating experiments.
Observing the real-time sample dynamics under a controlled electrical and thermal environment at sub-angstrom resolutions enables researchers to understanding the structure-property relationship and identify new characteristics in a wide range of materials.
Once the holder is connected to the biasing power supply and heating control box, the voltage/current can be set and temperature
profile programmed for total control during the in situ experiment.
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Solutions for In Situ Microscopy
In Situ Biasing & HeatingUnderstanding a materials’ electrical properties and thermal characteristics requires an in-depth knowledge of its structure-property relationship. Observing the dynamic events in a real-world environment is needed to better determine how to improve, manipulate or miniaturize materials within the microelectronics field.
The Lightning Series uses the latest in MEMS based technology – Nano-Chips - to scale down the experiment to dramatically improve stability and resolution. Enabling biasing and/or heating, researchers can characterize their materials in complete control of each parameter to allow reproducible results. The unique design of Nano-Chips provides the most reliable and precise results during experiments and maintains the full performance of the TEM.
I-V Measurement & Characterization
Measuring current – voltage (I-V) curves while observing the dynamic events in situ, enables researchers to determine the fundamental performance of a large variety of semiconductor materials. I–V characterization of materials at elevated temperatures allows researchers to obtain new information about the relationship between the structure and electrical properties, additionally to its temperature dependence. For example, electrical properties of individual
nanowires and the direct correlation to structure will open new application space in nanoelectrics, solar cells and phase change memory technology.
Structure Response to Electric Field
External electric field induces changes in the domain morphology of ferroelectric materials via polarization switching process. Therefore, direct observation of the structural changes during electrical poling will greatly facilitate the understanding of structure-property relationship of these materials. The Lightning Series enables researchers to understand the microstructural origins for electric field induced phenomena in ferroelectric materials, while at an elevated temperature environment.
Failure Analysis
Real-time monitoring of the dynamic events of semiconductor materials during electrical biasing at elevated temperature is important for determining the cause of failure and what corrective actions can be taken to improve its properties, and related performance. The Lightning Series allows for imaging the moment of morphology change and failure.
I-V MEASUREMENTS ON LAMELLAS I-V MEASUREMENTS ON NANOWIRES ELECTRIC FIELD STUDIES
Lightning Series - In Situ Biasing & Heating Solutions for TEM platforms 44
Solutions for In Situ Microscopy
Real-Time DynamicsThe Lightning Series for in situ basing & heating TEM provides you the power to obtain real-time information about your specimen under a controllable electrical and thermal environment. Investigate the next generation materials with the Lightning Series in order to obtain an in-depth knowledge of the structure-property relationship.
1. Nano-Chips
2. Lightning holder
3. Holder stand
4. Heating control unit
5. Source measurement unit (Keithley)
6. Laptop with Digiheater software
7. Interconnect box
Complete 'Plug & Play' Package
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Key Features of the Lightning Series
In situ biasing & heating
Control the electrical and thermal environment of your specimen.
Characterize your specimen
Measure the electrical properties of your material and investigate its temperature dependence.
Capture the real-time dynamics
Analyze the real-time structural evolution of your specimen.
Fast response time
Using Nano-Chip technology researchers can obtain instant and controllable response.
Maintain full TEM performance
Maintain sub-angstrom resolution and obtain quantitative data.
Understand your material
Discover the relationship between the microstructure, electrical and thermal properties.
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Solutions for In Situ Microscopy
Nano-Chip Technology The Lightning Nano-Chip is a functional consumable sample carrier that scales down the stimuli environment to the ‘sample’ size required for biasing/heating. This provides researchers with ability to control the environment with extreme precision around the specimen with fast response and reduced specimen drift. Eight electrical contacts (Lightning D9+) provide an unrivalled solution for scientists, enabling reliable electrical characterization of a wide range of materials at temperatures up to 800 °C.
Lightning Nano-Chip Specifications
Key Features of the Lightning Nano-Chips
Optimal stability
Unique design for stable, chemically inert and controllable environment.
High sensitivity
Detect current in a pA range for maximum control.
High resolution
Achieve sub-angstrom resolution under induced stimuli.
Fast response time
Metal materials allow instant and controllable response.
Reliable output
Four point probe ensures high accuracy.
Long life-time
> 90 hours at elevated temperatures with simultaneous biasing.
Control Method 4 or 8 electrical contacts
Dedicated Heating Max. Temperature 1300 °C
Heating & Biasing Max. Temperature 800 °C
Electric Field ≤ 100 kV/cm
DC Measurements ≤ 100 V
AC Measurements 1 - 100 Hz
Minimum Detectable Current pA range
Resolution ≤ 0.6 Å
E-Field experiments
I-V measurements on nanowires
I-V measurements on FIB lamellas
* Specifications may vary due to experimental parameters.
Lightning Series - In Situ Biasing & Heating Solutions for TEM platforms 66
Solutions for In Situ Microscopy
Application Examples
1. In situ TEM Characterization of Electrical Properties of Semiconductor Nanowires
2. In Situ Material Transport during Electromigration
In current example, by means of in situ TEM authors monitored a breakdown process of InAs nanowires induced by increased current. It was proposed that breakdown mechanism is based on electromigration of In leading nanowire breakage near the cathode side.
Zhang, C., et al. (2015). "In situ electrical characterization of tapered InAs nanowires in a transmission electron microscope with ohmic contacts." Nanotechnology 26(15): 155703.
The reversible electromigration in Pd–Pt nanobridges was investigated by in situ TEM. During electromigration, voids formation occurred at the cathode side with increasing the voltage. Changing the current direction caused the voids to refill and even hillocks to grow on the former cathode side.
Kozlova, T., et al. (2013). "In situ TEM and STEM studies of reversible electromigration in thin palladium–platinum bridges." Nanotechnology 24(50): 505708.
• Ferroelectric Materials Research
• Studying of Mechanical Fatigue
• I-V Characterisation of Nanomaterials
• Low-dimensional Materials Research
• Resistance Switching Process of the ReRAM Materials
• Failure Analysis
Application Fields
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Solutions for In Situ Microscopy
Performance Specifications
Stimuli Heating or Biasing Heating or Biasing Heating and Biasing
Electrical contacts Four Four Eight
Alpha tilt ± 25°HRP: ± 20°
URP: ± 15°
HRP: ± 20°
URP: ± 8°
Beta tilt ± 25°HRP: ± 15°
URP: ± 15°
HRP: ± 15°
URP: ± 15°
Compatibility (PP) ST, XT, T, BioT UHP, HRP, HTP, CRP, HCP
Tilt control From microscope From additional beta control unit
High Resolution TEM
(HR) STEM + EELS/EDX
Environmental TEM
Tomography
EFTEM
* Specifications are dependent on microscope and sample quality, listed as maximum possibility.
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