In this paper, the EL spectral intensity is investigated in

the super-bright green InGaN single-quantum-well (SQW)

LEDs over a wide temperature range and as a function of

wide injection current level to exploit what causes variations

of the carrier capture efficiency.

Experiments

GaN buffer layer

n

p

p-Al0.2Ga0.8N

c-plane Sapphire

（ SQW ）

p-GaN

n-GaN

InGaN SQW Green LED

SQW ： In0.45 Ga0.55N

InGaN well width ：

3 nm

temperature ： 15–300 K

injection current ：

2 mA –0.01 mA

misfit dislocations ：

∼10 10 cm −2

Results and Discussion

Fig. 1. Current–voltage characteristics of the green InGaN SQWdiode as a function of temperature between 20 and 300 K.

Temperature Vf

300K 2.6 V

20K 3.6 V

@ 0.1mA