incorporated an introduction to spreading resistance analysis … · · 2005-08-31an introduction...

An Introduction to Spreading Resistance Analysis

and its Application in the Semiconductor Industry

Sheila LoftisDan Dickey

Solecon Labs770 Trademark DrReno, NV 89521(775) 853-5900

www.solecon.com

Cover SOLECON LABS, Reno, Nevada (775) 853-5900

N A SOLECO LABS SEMIN

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SOLECONINCORPORATED

LABORATORIES

SOLECON LABS, Reno, Nevada (775) 853-5900


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FillingSRAR1

SPREADING RESISTANCE ANALYSIS REQUEST FORM

Date Company Engineer

Priority: High o Normal o(surcharge)

Mailing Address(Mail Stop too, please)

Tel #

Purchase Order # Message #(please!)

Fax #

Number of Samples _______________ Total Number of Profiles _______________ email

Sample #Approximate structure expected from surface down:

Type Depth Type Depth Type Depth Type Depth

MaximumDepth ofInterest

CircleSubstrate

Type

CircleCrystal

Orientation

P N <111> <100>

P N <111> <100>

P N <111> <100>

P N <111> <100>

P N <111> <100>

P N <111> <100>

P N <111> <100>

P N <111> <100>

Hard copy carrier concentration plots are supplied automatically. Also available are…Hard Copy: o Resistivity Plot, o Resistance Plot, o Data TableSoft Copy: o Text File(s), o Image File(s) -via:- o 3½" DOS, o E-mail

Reference Job # (if any):

Special Instructions: (Any specific region of the profile of greater importance than the rest?)

If device wafer, please indicate locations required by a sketch below or by attaching a photo or drawing .

Sketch:

FillingSRAR2 SOLECON LABS, Reno, Nevada (775) 853-5900


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1. Solecon Labs privacy policy.

2. Provide us with as much information as possible.

3. An appropriate bevel angle is needed.

4. Solecon strives for over 20 data points per layer.

5. A shallow emitter at .2µm on base at .4µm on epi/buried layer at 5.5µm on p-type substrate. What are you really interested in?

Filling out our request form:

Shallow Profile of the Bipolar Structure

ISOLATION

BA

ES

MTT

R

EI

E

MTT

R

EI

E

EPIEPI

BUR EDIAYER

L

Bipolar1 SOLECON LABS, Reno, Nevada (775) 853-5900


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Deep Profile of the Bipolar Structure

ISOLATION

N- EPI

P substrate

N+ BURIED LAYERN+ BURIED LAYERBASEI

TEM

ERTI TEM

ERT

P+ IS

OLA

TION



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-3C

arr

ier

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nce

ntr

atio

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cm

-3C

arr

ier

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nce

ntr

atio

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cm

DEPTHDEPTH-- micronsmicrons

1010 2020

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00 11 22 33 44 55 66

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00 .2.2 .4.4 .6.6 .8.8 11 1.21.2

-3C

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SSSS

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Bipolar TransistorBipolar Transistor

Sizes SOLECON LABS, Reno, Nevada (775) 853-5900


ARHow much of the sample do we need?

1. We measure from full wafers to a millimeter square.

2. Pattern wafers and backups.

Size of pattern:

1. Our minimum requirements are 20µm wide x 100µm long.

2. The smaller the pattern size the greater the compromise.

3. For this reason we suggest dedicated spreading resistance test patterns which are 50 x 500µm.

Beveling:

1. Your samples are mounted on angled beveling blocks.

2. Samples should be beveled immediately before probing, to avoid interference from native oxide.

DedTPs SOLECON LABS, Reno, Nevada (775) 853-5900


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Dedicated SRA Test Patterns

Schematic diagram of a spreading resistancemeasurement on a beveled sample

SOLECON LABS, Reno, Nevada (775) 853-5900Bevel


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ie

Dop ng Typ I

iDop ng Type II

eSampl

U

A

METALL

RGI

L

C

JUNCTIO

N

Osmium or Tungsten Carbide Probes

Carrier Type DeterminationWith a Few Modifications, the Spreading Resistance

Set-Up Can Determine “N” or “P”.

ie

Dop ng Typ I

iDop ng Type II

eSampl

One probe is heated.

Polarity and magnitude of the open circuit (Seebeck) voltage determined

U

A

METALL

RGI

L

C

JUNCTIO

N

HotProbe SOLECON LABS, Reno, Nevada (775) 853-5900


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Optical SOLECON LABS, Reno, Nevada (775) 853-5900


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Optical Profilometer view of a spreading resistancemeasurement on a beveled sample

BirdsEye SOLECON LABS, Reno, Nevada (775) 853-5900


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Birds Eye View of SRA Sample and Probes

Probing SOLECON LABS, Reno, Nevada (775) 853-5900


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1. 2 probe tips made of tungsten carbide are used.

2. The probe tips are shaped so that they can be positioned within 20um of each other.

3. Each probe tip is mounted on the end of a separate arm.

4. Each arm pivots on a kinematic bearing system that eliminates lateral motion or "scrubbing" as it contacts the sample.

5. Probe tips are lowered gently onto the sample.

6. Because of the small contact area, pressure is in excess of a million pounds per square inch.

7. 5 millivolts are applied across the probes and the resistance is measured.

Probing

LINEAR CURRENT FLOW

SPREADING RESISTANCE

rLR =

rR =

2rp

2a

La

rwhere is the bulk resistivity in ohm-cm.

rL

LINEAR CURRENT FLOW


rLR =

rR =

2rp

2a

La


rL

LINEAR CURRENT FLOW


rLR =

rR =

2rp

2a

La


rL

Linear SOLECON LABS, Reno, Nevada (775) 853-5900


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Two Probes on a Thin Layer (t<a):

D. H. Dickey, NBS SP 400-48

aaa

s

t

r lnR =

spt a

ThinLayer SOLECON LABS, Reno, Nevada (775) 853-5900


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Conductivity SOLECON LABS, Reno, Nevada (775) 853-5900


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pe pqnq mmr

s +==1

eqnN

mr

1@@

What is the significance of resistivity? In a semiconductorit is related to the concentration of electrons and holes:

And from that, the dopant concentration can be approximated.

.001 .01 0.1 1 10

n<100>

Resistivity (ohm-cm)

.0001 1000100

p<111>

n<111>

p<100>

1

10

210

310

410

510

610

710

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tan

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hm

s)


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Calibration ChartSpreading Resistance

vs. Resistivity (NIST Traceable Si Bulk Standards)

CalibCurves1 SOLECON LABS, Reno, Nevada (775) 853-5900

CalibCurves2 SOLECON LABS, Reno, Nevada (775) 853-5900


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.001 .01 0.1 1 10


.0001 1000100

1

10

210

310

410

510

610

710

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sis

tan

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hm

s)

n<111>n<100>

n<111>n<100>

n<111>n<100>

2.5g

10g

20g

.001 .01 0.1 1 10


.0001 1000100

p<111>p<100>

1

10

210

310

410

510

610

710

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hm

s)

p<111>p<100>

p<111>p<100>

2.5g

10g

20g

Calibration Data for Three Probe Loads

Probe Spacing Experiment on Relatively Thin Layers(Measured resistance is dominated by the lateral current flow)

After: Dickey, NBS SP 400-48 p16

01 10 100

Probe Spacing - microns

Me

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1000

100

200

300

400

500

600W

Sample #1284ohms/sq

Sample #2126ohms/sq

Sample #356.4ohms/sq

aa

s

t

r lnR =

spt a

Spacing SOLECON LABS, Reno, Nevada (775) 853-5900


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10

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1

2

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.

Bevel EdgeM

ea

sure

d R

esi

sta

nce

in O

hm

s

Probing “Raw Data”

High Resisitivity Epi

Hi es pigh R . E

w si ity ub

Lo Re stiv S trates

( ame d g typs

opin)e

Sample

Epi—Sub

strate

Inter

face

HighRho1 SOLECON LABS, Reno, Nevada (775) 853-5900


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High Resisitivity Epi (continued)

“Raw Data” Resistivity Plot

DataReduction

Re

sist

ivity

(o

hm

-cm

)

10

10

10

10

10

10

10

-2

-1

0

1

2

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4

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DEPTH - microns

0 10 20 30 40 50 6010

10

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10

1

2

3

4

5

6

7

8

.

Bevel Edge

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High Resisitivity Epi (continued)

Resistivity Carrier Concentration

Carrier Concentration

Calculated Using

Published Carrier

Mobility Values

Re

sist

ivity

(o

hm

-cm

)

10

10

10

10

10

10

10

-2

-1

0

1

2

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4

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DEPTH - microns

0 10 20 30 40

Ca

rrie

r C

on

cen

tra

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(c

m)

-3

1010

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DEPTH - microns

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-3



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Correction SOLECON LABS, Reno, Nevada (775) 853-5900


ARSampling Volume Correction

Our correction algorithms account for the sampling volume on non-uniformly doped layers. In regions with slight to noresistivity gradient, the algorithms tend to magnify the mechanical noise. But without correction the graded layer’s values

can be very wrong! We have various levels of smoothing which we can use to reduce the scatter in your profiles.

Both layers corrected(Unsmoothed data)

Uncorrected layers(Unsmoothed data)

Top layer corrected and smoothed(Uncorrected/unsmoothed substrate)

SIMPLE CARRIER CONCENTRATION

PROFILES CAN BE CONVERTED

TO DOPANT PROFILES

USING OUR POISSON SOLVER

RawData

DopantConcentration

Data reductionand

Calibration standardsPublished Carrier

Mobility ValuesPoissonSolver

Resistivity CarrierConcentration

Poisson1 SOLECON LABS, Reno, Nevada (775) 853-5900


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Simple Carrier Concentration Profiles Can Easily Be Converted to Dopant Profiles using Our Poisson Solver

Poisson Solver

Concentration Profile

3 4 5 6210

1410

1510

1610

1710

1310

CarrierConcentration

-3(cm )

Dopant Profile

DEPTH — microns3 4 5 6210

1410

1310

1510

1610

1710

DopantConcentration

-3(cm )

Poisson2 SOLECON LABS, Reno, Nevada (775) 853-5900


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.

70 keV 1e15, 4e15,1e16 10B into Silicon (circa 1983)

From : James Ehrstein et al, ASTM Special Technical Publication 850, D. C. Gupta, editor, p. 415.

SIMS Typically Reports Greater Depth in the Tail Region of B Diffusions.In the Following Example, Boron was Implanted into Single-crystal Si.

SRA

SIMS

DEPTH — microns

-3C

on

cen

tra

tion

(cm

)

(not ours)

Sims SOLECON LABS, Reno, Nevada (775) 853-5900


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11 MeV Arsenic Implant

“The implantations were carried out using the facilities of the Lawrence Berkeley Laboratory. 11 MeV beams were obtained from a dynamatron with a 2.2 megavolt terminal. The ion source is a conducting crystal of gallium arsenide from which arsenic ions in the 5+ charge state were sputtered and extracted into the accelerator column.”

From Megavolt Arsenic Implantation into Silicon, a paper presented at the 1982 International Conference on Metallurgical Coatings and Process Technology by P.F. Byrne, N. W. Cheung, and D.K. Sadana, University of California, Berkeley.

Many thanks to Peter Byrne for permission to reproduce and disseminate this very impressive profile.

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0 1 2 3 4 5

1410

1510

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DEPTH — microns

As11MeV SOLECON LABS, Reno, Nevada (775) 853-5900


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2010

4 8 12 16 20 24


-3(cm )

DEPTH — microns

P-TYPE CONTAMINATION— PROBABLY FROM BORONCONTAMINATED ANTIMONY

P-CONTAMINATION

EPI

N+BURIEDLAYER

(Antimony)

BContamination SOLECON LABS, Reno, Nevada (775) 853-5900


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DEPTH — microns

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SRP Through a Buried Layer Pattern:SRP Through a Buried Layer Pattern:

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2010

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(cm )-3

DEPTH — micronsDEPTH — microns

SRP through the Field:SRP through the Field:

AutoDoping SOLECON LABS, Reno, Nevada (775) 853-5900


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Arsenic Autodoping During Epitaxial Deposition

Ion Implant Channeling

Channeling SOLECON LABS, Reno, Nevada (775) 853-5900

DEPTH-micronsDEPTH-microns

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..

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00 .05.05 .1.1 .15.15 .2.2 .25.25 .3.3

DEPTH-micronsDEPTH-microns

0 degrees tilt10 degrees tilt


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P+ Isolation Diffusion into N-Epi

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DEPTH — microns

ADEQUATEISOLATION

Wafer A

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DEPTH — microns

PRECARIOUS!

A VERY MARGINALISOLATION

Wafer B

P+Iso SOLECON LABS, Reno, Nevada (775) 853-5900


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Thermal Donors — A Severe Case

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DE P T H - m i c ro n s

10110 .5 1.0 1.5 2.0 2.5 3.0

10

10

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10

10

13

14

15

16

17

1012

3 -C

arr

ier

Co

nce

ntr

atio

n (c

m)

bulk dopingof wafer~ 2e14p-type

OxyDoners SOLECON LABS, Reno, Nevada (775) 853-5900


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Inactive SOLECON LABS, Reno, Nevada (775) 853-5900


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DEPTH - microns

0.1 0.2 0.3 0.4 0.5 0.6

10

10

10

10

10

10

10

7

6

5

4

3

2

1

2M

ob

ility

(cm

/ V

-se

c)

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DEPTH - microns

0.1 0.2 0.3 0.4 0.5 0.6

10

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19

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"Damaged" Region

Unannealed Implant

-3N-type implant into 1e16 cm N-type background. Since the implant wasn'tactivated, SRA senses the mobility change in the damaged area.

CMOS SOLECON LABS, Reno, Nevada (775) 853-5900


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DEPTHDEPTH-- micronsmicronsDEPTHDEPTH-- micronsmicrons

00 22 44 66 88 1010 121200 11 22 33 44 55 6600 .1.1 .2.2 .3.3 .4.4

Shallow Profile toCharacterize the Source-Drain

Steeper Profile (Plotted on 2 Depth Scales)to Characterize the

N-Well, Epi, and Substrate

CMOS (P-channel Source-Drain)

Factors SOLECON LABS, Reno, Nevada (775) 853-5900


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Factors influencing SRP measurements(X , Shape, Carrier Concentration)j

1) Bevel edge: Clear edge is required to identify fringes from different films near the active area, starting points and footprints. We use high quality optical microscope with dark field illumination to identify this

2) Bevel angle: Bevel angle multiplied by step increments influence the depth. Can influence shape, X , Base width measurements, etc. j

particularly in shallow SRPs

3) Step increments

4) Location of interest: Falling out of pattern and probing adjacent structures can lead to distorted profiles

5) Probe tip condition: Probe penetration, Calibration, Data Smoothing: While smoothing data, it is necessary to follow data trends, visually examine and suppress concavity or convexity and not allow data to follow random noise by choosing best fits and appropriate correction factors

Structures SOLECON LABS, Reno, Nevada (775) 853-5900


ARCommon Structures of Interest For SRA

CMOS STRUCTURES

• Epi/Substrate

• P-Well/Epi

• N-Well/Epi

• Poly/Gate Ox/Epi

• Poly/Gate Ox/N-Channel

• Poly/Gate Ox/P-Channel

• P+/Epi

• P+/NWell

• N+/Epi

• N+/PWell

• NLDD

• PLDD

• Under field Ox with implant

• Under field Ox without implant

BIPOLAR STRUCTURES

• Epi/Substrate

• Epi/Buried Layer/Substrate

• Base/Epi

• Base/Epi/Buried layer/Sub

• Base/Isolation/Epi/Sub

• Emitter/Base/Epi

• Emitter/Base/Epi/Buried layer

• Sinker/Epi/Sub

• Sinker/Epi/Buried layer

• Isolation/Epi/Sub

QAChecklist SOLECON LABS, Reno, Nevada (775) 853-5900


ARQA Checklist

1. Was the profile run in the location specified by the requester?2. Were the final profiles shown to lab supervisor?3. Are the profiles plotted with correct crystal orientation?4. Was the customer contacted for information regarding orientation or a break

test done?5. Are the step increments optimal?6. Do the job numbers match those of customer copy?7. Do the sample numbers match those of customer copy?8. Are there different profiles for the same file numbers and sample numbers?9. Are the file numbers matching with customer copy?10. Was Calibration Check done for epi samples?11. Are the correction factors, smoothing factors optimal?12. Was hot probe done on all samples where this was necessary? Hot probes

wires not reversed?13. Do scalings (y axis) match so customer can overlay with reference jobs and

supreme 4?14. Has frsp been tried for p to p+ and n to n+ layers and for dips at epi to n+

junctions?15. Were the bevel angle scales chosen on the full axis according to information

posted at profilometer?16. Was there a close correlation between the 4 point probe and SRA data sheet rho

on bare silicon/test samples?17. Check customer satisfaction to see if profiles are in line with his expectations.

Qmetrics SOLECON LABS, Reno, Nevada (775) 853-5900


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Quality Systems In Line With ISO 9001/17025

• Management responsibility• Quality manual• Business planning• Contract review• Written procedures on critical operations• Purchasing• Control of customer supplied samples• Sample identification and traceability via job tracking system• Statistical techniques• Measurement and inspections• Control of measurement and test equipment• Control of non conforming profiles• Corrective and preventive actions• ESD control• Internal and external quality control audits• Control of quality records• Customer training records• Shipping of profiles• Customer satisfaction records• Inter lab comparisons, round robin records

WhySRA SOLECON LABS, Reno, Nevada (775) 853-5900


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1. Over 25 years of experience and continuous improvement in the art and science of beveling and probing with best known method on profiling carrier concentration.

2. High spatial resolution of dopant and depth profiles.

3. Low cost operation and high return on investment for customers, easily affordable.

4. Turnover within 24 hours available.

5. Fast and accurate feedback to fab and foundries.

6. Over 300 satisfied customers.

7. Both SRA and process expertise available at Solecon Labs.

8. Edge over competitors as far as reproducibility goes.

Why Solecon Labs and SRA

incorporated an introduction to spreading resistance analysis … · · 2005-08-31an introduction...

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