infineon ihw20n120r3 ds v02 06 en

ResonantSwitchingSeriesReverseconductingIGBTwithmonolithicbodydiode

IHW20N120R3

Datasheet

IndustrialPowerControl

2

IHW20N120R3ResonantSwitchingSeries

Rev.2.6,2015-01-26

ReverseconductingIGBTwithmonolithicbodydiodeFeatures:

•Powerfulmonolithicbodydiodewithlowforwardvoltagedesignedforsoftcommutationonly•TRENCHSTOPTMtechnologyapplicationsoffers:-verytightparameterdistribution-highruggedness,temperaturestablebehavior-lowVCEsat-easyparallelswitchingcapabilityduetopositivetemperaturecoefficientinVCEsat•LowEMI•QualifiedaccordingtoJESD-022fortargetapplications•Pb-freeleadplating;RoHScompliant•CompleteproductspectrumandPSpiceModels:http://www.infineon.com/igbt/

Applications:

•Inductivecooking•Inverterizedmicrowaveovens•Resonantconverters•Softswitchingapplications

G

C

E

GC

E

KeyPerformanceandPackageParametersType VCE IC VCEsat,Tvj=25°C Tvjmax Marking PackageIHW20N120R3 1200V 20A 1.48V 175°C H20R1203 PG-TO247-3

3


Rev.2.6,2015-01-26

TableofContents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15

4


Rev.2.6,2015-01-26

MaximumRatingsForoptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.

Parameter Symbol Value UnitCollector-emitter voltage VCE 1200 V

DCcollectorcurrent,limitedbyTvjmaxTC=25°CTC=100°C

IC 40.020.0

A

Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 60.0 A

TurnoffsafeoperatingareaVCE≤1200V,Tvj≤175°C - 60.0 A

Diodeforwardcurrent,limitedbyTvjmaxTC=25°CTC=100°C

IF 40.020.0

A

Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 60.0 A

Gate-emitter voltageTransientGate-emittervoltage(tp≤10µs,D<0.010) VGE

±20±25 V

PowerdissipationTC=25°CPowerdissipationTC=100°C Ptot

310.0155.0 W

Operating junction temperature Tvj -40...+175 °C

Storage temperature Tstg -55...+175 °C

Soldering temperature,wave soldering 1.6mm (0.063in.) from case for 10s 260 °C

Mounting torque, M3 screwMaximum of mounting processes: 3 M 0.6 Nm

ThermalResistance

Parameter Symbol Conditions Max.Value UnitCharacteristic

IGBT thermal resistance,junction - case Rth(j-c) 0.48 K/W

Diode thermal resistance,junction - case Rth(j-c) 0.48 K/W

Thermal resistancejunction - ambient Rth(j-a) 40 K/W

5


Rev.2.6,2015-01-26

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified

Valuemin. typ. max.

Parameter Symbol Conditions Unit

StaticCharacteristic

Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.50mA 1200 - - V

Collector-emitter saturation voltage VCEsat

VGE=15.0V,IC=20.0ATvj=25°CTvj=125°CTvj=175°C

---

1.481.701.80

1.70--

V

Diode forward voltage VF

VGE=0V,IF=20.0ATvj=25°CTvj=125°CTvj=175°C

---

1.551.701.80

1.75--

V

Gate-emitter threshold voltage VGE(th) IC=0.50mA,VCE=VGE 5.1 5.8 6.4 V

Zero gate voltage collector current ICESVCE=1200V,VGE=0VTvj=25°CTvj=175°C

--

--

100.02500.0

µA

Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA

Transconductance gfs VCE=20V,IC=20.0A - 18.3 - S

Integrated gate resistor rG none Ω

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified

Valuemin. typ. max.


DynamicCharacteristic

Input capacitance Cies - 1503 -

Output capacitance Coes - 50 -

Reverse transfer capacitance Cres - 42 -

VCE=25V,VGE=0V,f=1MHz pF

Gate charge QGVCC=960V,IC=20.0A,VGE=15V - 211.0 - nC

Internal emitter inductancemeasured 5mm (0.197 in.) fromcase

LE - 13.0 - nH

SwitchingCharacteristic,InductiveLoad

Valuemin. typ. max.


IGBTCharacteristic,atTvj=25°CTurn-off delay time td(off) - 387 - ns

Fall time tf - 25 - ns

Turn-off energy Eoff - 0.95 - mJ

Tvj=25°C,VCC=600V,IC=20.0A,VGE=0.0/15.0V,RG(on)=15.0Ω,RG(off)=15.0Ω,Lσ=180nH,Cσ=39pFLσ,CσfromFig.EEnergy losses include “tail” anddiode reverse recovery.

6


Rev.2.6,2015-01-26

SwitchingCharacteristic,InductiveLoad

Valuemin. typ. max.


IGBTCharacteristic,atTvj=175°CTurn-off delay time td(off) - 454 - ns

Fall time tf - 84 - ns

Turn-off energy Eoff - 1.65 - mJ

Tvj=175°C,VCC=600V,IC=20.0A,VGE=0.0/15.0V,RG(on)=15.0Ω,RG(off)=15.0Ω,Lσ=180nH,Cσ=39pFLσ,CσfromFig.EEnergy losses include “tail” anddiode reverse recovery.

7


Rev.2.6,2015-01-26

Figure 1. Collectorcurrentasafunctionofswitchingfrequency(Tj≤175°C,D=0.5,VCE=600V,VGE=0/15V,RG=15Ω)

f,SWITCHINGFREQUENCY[kHz]

IC,C

OLLECTO

RCURRENT[A]

0.01 0.1 1 10 1000

20

40

60

TC=80°

TC=110°

Figure 2. Forwardbiassafeoperatingarea(D=0,TC=25°C,Tj≤175°C;VGE=15V)

VCE,COLLECTOR-EMITTERVOLTAGE[V]

IC,C

OLLECTO

RCURRENT[A]

1 10 100 10000.1

1

10

100

tp=1µs

5µs

20µs

100µs

1ms

10ms

DC

Figure 3. Powerdissipationasafunctionofcasetemperature(Tj≤175°C)

TC,CASETEMPERATURE[°C]

Ptot ,POWERDISSIPATION[W

]

25 50 75 100 125 150 1750

50

100

150

200

250

300

350

Figure 4. Collectorcurrentasafunctionofcasetemperature(VGE≥15V,Tj≤175°C)

TC,CASETEMPERATURE[°C]

IC,C

OLLECTO

RCURRENT[A]

25 50 75 100 125 150 1750

20

40

8


Rev.2.6,2015-01-26

Figure 5. Typicaloutputcharacteristic(Tj=25°C)


IC,C

OLLECTO

RCURRENT[A]

0 1 2 30

10

20

30

40

50

60

VGE=20V

17V

15V

13V

11V

9V

7V

5V

Figure 6. Typicaloutputcharacteristic(Tj=175°C)


IC,C

OLLECTO

RCURRENT[A]

0 1 2 3 40

10

20

30

40

50

60

VGE=20V

17V

15V

13V

11V

9V

7V

5V

Figure 7. Typicaltransfercharacteristic(VCE=20V)

VGE,GATE-EMITTERVOLTAGE[V]

IC,C

OLLECTO

RCURRENT[A]

0 2 4 6 8 10 120

10

20

30

40

50

60

25°CTj=175°C

Figure 8. Typicalcollector-emittersaturationvoltageasafunctionofjunctiontemperature(VGE=15V)

Tj,JUNCTIONTEMPERATURE[°C]

VCE(sat) ,COLLECTO

R-EMITTE

RSATU

RATION[V

]

0 25 50 75 100 125 150 1751.0

1.5

2.0

2.5

3.0IC=10AIC=20AIC=40A

9


Rev.2.6,2015-01-26

Figure 9. Typicalswitchingtimesasafunctionofcollectorcurrent(ind.load,Tj=175°C,VCE=600V,VGE=0/15V,RG(on)=15Ω,RG(off)=15Ω,testcircuitinFig.E)

IC,COLLECTORCURRENT[A]

t,SWITCHINGTIMES[ns]

0 10 20 30 4010

100

1000

td(off)

tf

Figure 10. Typicalswitchingtimesasafunctionofgateresistance(ind.load,Tj=175°C,VCE=600V,VGE=0/15V,IC=20A,testcircuitinFig.E)

RG,GATERESISTANCE[Ω]


10 20 30 40 5010

100

1000

td(off)

tf

Figure 11. Typicalswitchingtimesasafunctionofjunctiontemperature(ind.load,VCE=600V,VGE=0/15V,IC=20A,RG(on)=15Ω,RG(off)=15Ω,testcircuitinFig.E)



25 50 75 100 125 150 1751

10

100

1000td(off)

tf

Figure 12. Gate-emitterthresholdvoltageasafunctionofjunctiontemperature(IC=0.5mA)


VGE(th) ,GATE

-EMITTE

RTHRESHOLD

VOLTAGE[V

]

0 25 50 75 100 125 150 1750

1

2

3

4

5

6

7

typ.min.max.

10


Rev.2.6,2015-01-26

Figure 13. Typicalswitchingenergylossesasafunctionofcollectorcurrent(ind.load,Tj=175°C,VCE=600V,VGE=0/15V,RG(on)=15,RG(off)=15Ω,testcircuitinFig.E)

IC,COLLECTORCURRENT[A]

E,S

WITCHINGENERGYLOSSES[m

J]

0 10 20 30 400

1

2

3 Eoff

Figure 14. Typicalswitchingenergylossesasafunctionofgateresistance(ind.load,Tj=175°C,VCE=600V,VGE=15/0V,test circuit in Fig. E)

RG,GATERESISTANCE[Ω]

E,S


J]

10 20 30 40 500

1

2

3Eoff

Figure 15. Typicalswitchingenergylossesasafunctionofjunctiontemperature(indload,VCE=600V,VGE=0/15V,IC=20A,RG(on)=15Ω,RG(off)=15Ω,testcircuitinFig.E)


E,S


J]

25 50 75 100 125 150 1750

1

2Eoff

Figure 16. Typicalswitchingenergylossesasafunctionofcollectoremittervoltage(ind.load,Tj=175°C,VGE=150/V,IC=20A,RG(on)=15Ω,RG(off)=15Ω,testcircuitinFig.E)


E,S


J]

400 500 600 700 800 900 10001.2

1.4

1.6

1.8

2.0

2.2Eoff

11


Rev.2.6,2015-01-26

Figure 17. Typicalgatecharge(IC=20A)

QGE,GATECHARGE[nC]

VGE,G

ATE

-EMITTE

RVOLTAGE[V

]

0 40 80 120 160 2000.0

2.5

5.0

7.5

10.0

12.5

15.0240V960V

Figure 18. Typicalcapacitanceasafunctionofcollector-emittervoltage(VGE=0V,f=1MHz)


C,C

APACITANCE[pF]

0 10 20 3010

100

1000Cies

Coes

Cres

Figure 19. IGBTtransientthermalimpedance(D=tp/T)

tp,PULSEWIDTH[s]

ZthJC,TRANSIENTTH

ERMALIMPEDANCE[K

/W]

1E-6 1E-5 1E-4 0.001 0.01 0.1 10.001

0.01

0.1

1

D=0.5

0.2

0.1

0.05

0.02

0.01

single pulse

i:ri[K/W]:τi[s]:

19.8E-32.8E-5

20.014079934.7E-5

30.06982.0E-4

40.11581.2E-3

50.15699.9E-3

60.11370.08835259

Figure 20. Diodetransientthermalimpedanceasafunctionofpulsewidth(D=tp/T)

tp,PULSEWIDTH[s]

ZthJC,TRANSIENTTH

ERMALIMPEDANCE[K

/W]

1E-6 1E-5 1E-4 0.001 0.01 0.1 10.001

0.01

0.1

1

D=0.5

0.2

0.1

0.05

0.02

0.01

single pulse

i:ri[K/W]:τi[s]:

19.8E-32.8E-5

20.01414.7E-5

30.06982.0E-4

40.11581.2E-3

50.15699.9E-3

60.11370.08835259

12


Rev.2.6,2015-01-26

Figure 21. Typicaldiodeforwardcurrentasafunctionofforwardvoltage

VF,FORWARDVOLTAGE[V]

IF ,FORWARDCURRENT[A]

0 1 2 30

10

20

30

40Tj=25°CTj=175°C

Figure 22. Typicaldiodeforwardvoltageasafunctionofjunctiontemperature


VF ,FO

RWARDVOLTAGE[V

]

0 25 50 75 100 125 150 1750

1

2

3IF=10AIF=20AIF=40A

13


Rev.2.6,2015-01-26

PG-TO247-3

14


Rev.2.6,2015-01-26

t

a b

td(off)

tf t

rtd(on)

90% IC

10% IC

90% IC

10% VGE

10% IC

t

90% VGE

t

t

90% VGE

VGE

(t)

t

t

tt1 t4

2% IC

10% VGE

2% VCE

t2 t3

E

t

t

V I toff

= x x d

1

2

CE C E

t

t

V I ton

= x x d

3

4

CE C

CC

dI /dtF

dI

I,V

Figure A.

Figure B.

Figure C. Definition of diode switchingcharacteristics

Figure E. Dynamic test circuit

Figure D.

I (t)C

Parasitic inductance L ,

parasitic capacitor C ,

relief capacitor C ,

(only for ZVT switching)

s

s

r

t t t

Q Q Qrr a b

rr a b

= +

= +

Qa Qb

V (t)CE

VGE

(t)

I (t)C

V (t)CE

15

IHW20N120R3

Resonant Switching Series

Rev. 2.6, 2015-01-26

Revision History

IHW20N120R3

Revision: 2015-01-26, Rev. 2.6

Previous Revision

Revision Date Subjects (major changes since last revision)

1.1 2008-05-06 -

1.2 2008-07-11 -

2.3 2008-07-29 -

2.4 2009-04-01 -

2.5 2013-02-12 Layout change

2.6 2015-01-26 Minor changes

We Listen to Your CommentsAny information within this document that you feel is wrong, unclear or missing at all?Your feedback will help us to continuously improve the quality of this document.Please send your proposal (including a reference to this document) to: [email protected]

Published byInfineon Technologies AG81726 Munich, Germany81726 München, Germany© 2015 Infineon Technologies AGAll Rights Reserved.

Legal DisclaimerThe information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding theapplication of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,including without limitation, warranties of non-infringement of intellectual property rights of any third party.

InformationFor further information on technology, delivery terms and conditions and prices, please contact the nearest InfineonTechnologies Office (www.infineon.com).

WarningsDue to technical requirements, components may contain dangerous substances. For information on the types inquestion, please contact the nearest Infineon Technologies Office.The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systemsand/or automotive, aviation and aerospace applications or systems only with the express written approval of InfineonTechnologies, if a failure of such components can reasonably be expected to cause the failure of that life-support,automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Lifesupport devices or systems are intended to be implanted in the human body or to support and/or maintain and sustainand/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may beendangered.

infineon ihw20n120r3 ds v02 06 en

Documents

c tvjmax

ncinternal emitter

vga threshold voltage

natransconductance gfs

forward voltage vfvge

testing conditions

c h20r1203 pgto247

output capacitance coes