infrastructure of thin films division in imp

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Infrastructure of Thin Films Division in IMP Hubert Głowiński and Janusz Dubowik, IFM PAN

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Infrastructure of Thin Films Division in IMP. Hubert Głowiński and Janusz Dubowik, IFM PAN. Outline. VNA-FMR FMR PIMM. Dynamic measurements. VSM PPMS MOKE. Static measurements. GIXRD XRF. Structural characterization. Field sweep FMR. - PowerPoint PPT Presentation

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Page 1: Infrastructure of Thin Films Division in IMP

Infrastructure of Thin Films Division in IMP

Hubert Głowiński and Janusz Dubowik, IFM PAN

Page 2: Infrastructure of Thin Films Division in IMP

Outline

VNA-FMRFMRPIMM

GIXRDXRF

VSMPPMSMOKE

Static measurements

Dynamic measurements

Structural characterization

Page 3: Infrastructure of Thin Films Division in IMP

Field sweep FMR

• During field sweep FMR experiment magnetization vector changes its direction

Page 4: Infrastructure of Thin Films Division in IMP

FMR

Lock-in

Gaussmeter

Microwave bridge

Field sweepcontroller

• X-band spectrometer 9.18 GHz

• Field up to 11 kOe

Page 5: Infrastructure of Thin Films Division in IMP

VNA-FMR

• Frequency up to 40 GHz

Port 1 Port 2

Próbka

External magnetic field

Microwave field

Coplanar waveguide

On frequency sweep FMR experiment magnetization vector does not change its direction

Page 6: Infrastructure of Thin Films Division in IMP

CPW – coplanar waveguide

Electric field lines

Magnetic field lines

External magnetic field

I. Neudecker et al. JMMM 307 (2006) 148–156

Simulated currentHomogenous current

Electric field lines

Magnetic field lines

Page 7: Infrastructure of Thin Films Division in IMP

Channelized Coplanar Waveguide

The other determining factor in the high frequency performance of the vias is the spacing between the rows of the vias. The wider the spacing, the lower the cutoff frequency and the closer the spacing the higher the cutoff frequency.

The vias are acting as a microwave wall

http://mpd.southwestmicrowave.com/pdf/Launch_Report.pdf

Page 8: Infrastructure of Thin Films Division in IMP

VNA-FMR

VNA

Gaussmeter

Helmholtz’s coils

Power supply

Page 9: Infrastructure of Thin Films Division in IMP

VNA-FMR

0 2000 4000 6000 8000 10000 12000

0,2300

0,2301

0,2302

0,2303

0,2304

0,2305

0,2306

0,2307

0,2308

0,2309

0,2310

0,2311

0,2312

0,2313

A [a

.u.]

Field [Oe]

PolarizerFree

Analyzer

20 GHz

SiTiAuCoAuCoAuCoAuCoAuCoAu

Field sweep modeDifferent frequencies

Frequency sweep modeDifferent fields

Page 10: Infrastructure of Thin Films Division in IMP

Pulsed inductive microwave magnetometer (PIMM)

Port

Sample

External magnetic field

Pulse magnetic field

Port

Pulse generator

Sampling oscilloscope

Trigger

Bandwidth 20 GHzPulse risetime 55 psPulse amplitude 10 V

Page 11: Infrastructure of Thin Films Division in IMP

PIMM

Pulse generator

Oscilloscope

Power supply

Helmholtz coils

Page 12: Infrastructure of Thin Films Division in IMP

Vibrating Sample Magnetometer – VSM

• Frequency: 35 Hz• Dual pickup coils• Magnetic field: up

to 16 kOe• Temperature: -

100oC to 250oC

M.Matczak, Thesis, Politechnika Poznańska, Poznań, 2011

Generator

Gaussmeter

Pickup coils

Power supply

Lock-in

Hallotron

Glass pipe

Loudspeaker

PC

Page 13: Infrastructure of Thin Films Division in IMP

PHYSICAL PROPERTY MEASUREMENT SYSTEM

(PPMS)• Options

– VSM– Resistance– Torque magnetometer

• PPMS system properties:– Temperature range: 2 K -

350 K.– Magnetic field: up to 9

tesla.– Magnetic field ramp rate:

determined by magnet and power supply.

– Temperature and magnetic field may be ramped during the measurement.

Page 14: Infrastructure of Thin Films Division in IMP

MOKE

Stepper motor

Elektromagnet

PC

Gaussmeter

Power supply

Detector

Lens

Lens

Mirror

Modulator Analyzer

Lock-in

Polarizer

Laser

Modulator

Z axis

Wavelength λ=640 nm

M.Matczak, Thesis, Politechnika Poznańska, Poznań, 2011

Page 15: Infrastructure of Thin Films Division in IMP

MOKE – device setup1. Laser diode2. Polarizer3. Modulator4. Lens 5. Electromagnet6. Sample holder and table7. Mirror8. Analyser9. Lens10. Detector (fotodiode)11. Magnetic field sensor

M.Matczak, Thesis, Politechnika Poznańska, Poznań, 2011

Page 16: Infrastructure of Thin Films Division in IMP

MOKE

-8 -6 -4 -2 0 2 4 6 8

-300

-280

-260

-240

-220

-200

-180

-160

-140

-120

-100

-80

-60

-40

-20

0

20

40

Ti4/Au60/(Co0.8/Au1)3/Au2/Co1.5/Au2/Co3/Au5

M [a

.u.]

H [kOe]

0 2 4 6 8 0 2 4 6 8

SiTiAuCoAuCoAuCoAuCoAuCoAu

Page 17: Infrastructure of Thin Films Division in IMP

XRF

• We can measure:– Thickness of thin films

(up to 200 nm)– Chemical elements

composition1 – X-ray source, 2 - collimator,

3 – sample holder, 4 - detector

K. Załęski, Masters thesis, UAM Wydział Fizyki, Poznań 2007 Wikipedia

Multichannel analyzer 10 keV / 1024 channels

Characteristic radiation

Page 18: Infrastructure of Thin Films Division in IMP

GIXRD

Seifert, model XRD 3003, X-ray source Cu-K (wavelength λ=0.15419 nm)

X-ray source

sample

detector

aperture

P. Kuświk, PhD dissertation, IFM PAN, Poznań, 2010

Allows to measure thickness of thin films

2θ varies 0o - 10o

Interference of the wave reflected from surface of the film and the surface of the substrate results in Kiessiga fringes.

Page 19: Infrastructure of Thin Films Division in IMP

Summary

• We are able to characterize magnetically samples (effective fields, anisotropy, damping parameter)

• We are able to characterize structure of the sample (film thickness, sublayer thickness, chemical composition)

Page 20: Infrastructure of Thin Films Division in IMP

Thank you for your attention!