institute of ultra high frequency semiconductor electronics of russian academy of sciences design of...

Institute of Ultra High frequency Semiconductor Electronics of Russian Academy of Sciences

Design of monolithic microwave integrated circuits in Institute of Ultra High frequency Semiconductor Electronics of Russian

Academy of Sciences

Gnatyuk Dmitry, PhD, laboratory supervisor

Institute of Ultra High frequency Semiconductor Electronics of Russian Academy of Sciences

Founded in 2002

2002 – 3 employees2013 – 6 employeesincluding 1 student and 1 PhD student

Laboratory for research and development of design methods of nanoheterostructural ultra high frequency transistors and

microwave monolithic circuits and for microwave measurements.

Design engineer

CAD verified modelsDesign Rules

Completed project

FOUNDRY

- technology- production

END PRODUCT

CONVENTIONAL DESIGN FLOW

Evaluation of standard Microwave Office model

Spiral Inductor 0,4 nH

blue – measurementpurple – standard modelgreen – EM calculationred – EM calculation improved

S11 S21

Bended microstrip line



S11 S21


Capacitor 0,2 pF


S11 S21

0 1 2 3 4 5

Voltage (V)

VAH

0

10

20

30

40

50

60

70

80

90

100

p11p10

p9

p8

p7

p6

p5

p4

p3p2

p1

IVCurve() (mA)Schematic 1

p1: Vstep = 0 V

p2: Vstep = -0.2 V

p3: Vstep = -0.4 V

p4: Vstep = -0.6 V

p5: Vstep = -0.8 V

p6: Vstep = -1 V

p7: Vstep = -1.2 V

p8: Vstep = -1.4 V

p9: Vstep = -1.6 V

p10: Vstep = -1.8 V

p11: Vstep = -2 V

Equivalent circuit based model

Measured IV

Calculated IV

N

F,

dB

Frequency, GHz

Measured

Calculated

Development of Transistor models

I dr

ain,

mA

U gate-drain, V

0 1 2 3 4 50

20

40

60

80

100

Ток

сто

ка, м

А.

Напряжение сток-исток, В.

0-0.2-0.4

-0.6

-0.8

-1

-1.2

-1.4

-1.6

-1.8-2

I dr

ain,

mA

U gate-drain, V

Calculated results

Schematic and layout of GaAs pHEMT Ka-band LNA

Design of Ka-band LNA (version 1)

N

F,

dB

Frequency, GHzFrequency, GHz

VS

WR

F = 30 – 37,5 GHzGain > 18 dBNF < 5 dBVSWR in < 2VSWR out <2

VS

WR

in

VS

WR

out

S21

, dB

Sta

bilit

y

Measured results of Ka-band LNA (version 1)

Corrected layout of Ka-band LNA (version 1)

type 1 type 2

type 3 type 4

Measured results of corrected Ka-band LNA (version 1)

type 1 type 2

type 3 type 4

NF

, d

B

Frequency, GHz

Measured Gain and NF of LNA (types 1 - 3) Measured Gain and NF of LNA (type 4)

Comparison of NF of different types of LNA

Gain = 18 -22 dBNF = 2,5 - 3,3 dB VSWR in < 2VSWR out < 2 Ud=2V, Id=60mА

Measured Noise figure of corrected Ka-band LNA

G

ain

, N

F,

dB

Frequency, GHz

Gai

n,

NF

, d

B

Frequency, GHz

a) Measured and calculated data of LNA type 1

b) Measured and calculated data of LNA type 4

Calculated

Calculated

Calculated

Calculated

Measured

Measured

Measured

Measured

Frequency, GHz Frequency, GHz Frequency, GHzFrequency, GHz

V

SW

R in

V

SW

R o

ut

N

F,

dB

Calculated

Calculated

Calculated

Calculated

Measured Measured Measured Measured

Frequency, GHz Frequency, GHz Frequency, GHz Frequency, GHz

V

SW

R in

V

SW

R o

ut

N

F,

dB

Accuracy of calculations

• Inaccurate values of physical magnitude of characteristics of materials at high frequency (permittivity and loss tangent of dielectric, conductivity of metal etc);

• Error due to 2.5-D simulator calculation method;

• Design peculiarities that were not taken into account during calculations;

• Error due to port calibration procedure used in CAD software;

• Combined effect of stated above reasons.

Possible reasons of calculation error

Picture of perfected LNA

Schematic of perfected LNA

Design of Ka-band LNA (version 2)

Gain = 19-22 dB NF = 3,0 - 3,7 dB VSWR in < 2VSWR out < 2

Measured results of perfected Ka-band LNA (version 2)

Ud=2,2 VUg=0,4 VId=46 mА

NF

Gain

Gai

n a

nd

NF

, d

B

Frequency, GHz

V

SW

R in

V

SW

R o

ut

S

tabi

lity

Frequency, GHz Frequency, GHz


V

SW

R in

V

SW

R o

ut

S

tabi

lity

Frequency, GHz


Frequency, GHz

Validity of design method

Measured and simulated data for Ka-band LNA (version 2)

• Suggested design method is proved to be effective for 1st iteration result.

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

25 30 35 40

Частота, ГГц

Ко

эф

фи

ци

ен

т ш

ум

а,

дБ

Расчет

Измерение

Calculated

Measured

Frequency, GHz

N

F, d

B

V

SW

R i

n

V

SW

R o

ut

Sta

bil

ity



Measured

Measured

Measured

Measured

Calculated

Calculated

Calculated

Calculated

20 25 30 35 40 4515 50

5

10

15

20

0

25

freq, GHz

dB(S

(2,1

))

Design flow diagram

Name Band, GHz Gain, dB NF, dBS11, dB

S22, dB

Power supply

Chip size, mm2

IUHFSE RAS(Version 1)

37 - 44 18-20 2,5 - 3,3 -10 – -23 -10 – -242V,

60mА1,25 х 1,1

IUHFSE RAS (Version 1)

31 - 44 14-20 2,5 - 5 -5 – -23 -5 – -242V,

60mА1,25 х 1,1


28 – 36 18,5 – 22 3,0 – 3,7 -10 – -15 -14 – -22Ug=0,4VUd=2V,60mА

1,15 х 1,0


25 – 40 17 – 22 2,8 – 4,0 -6 – -14 -5 – -22Ug=0,4VUd=2V,60mА

1,15 х 1,0

Mimix

XL1000-BD20 – 40 17 – 21 2 – 4 -5 – -20 -5 – -17 3V, 35 mА 2,0х1,0

Avago TechnologiesAMMC-6241

26 – 43 17 – 22 2,6 – 3,3 -10 – -14 -17 – - 253V,

60 mА1,9 х 0,8

Triquint TGA4507-EPU

28 – 36 20 – 25 2,1 – 2,3 -6 – -10 -6 – -233V,

60 mА1,86 х 0,85

Triquint TGA4508-EPU

30 – 42 20 – 21 2,7 – 3,2 -6 – -12 -15 – -273V,

40 mА1,7 х 0,8

Hittite HMC-ALH369

24 – 40 18 – 27 1,4 – 2,2 -10 – -20 -13 – -305V,

66 mА2,1 x 1,37

Hittite HMC-566

29 – 36 19– 23 2,5 – 3 -13 – -24 -8 – -103V,

80 mА2,54 x 0,98

UMS CHA2394 36 – 40 19 – 21 2 – 2,5 -8 – -10 -12 – -253,5V, 60 mА

1,72x1,08

Comparison of designed LNA with world’s analogues

Avago Technologies AMMC-6241

NF

Gain

G

ain

an

d N

F,

dB

Frequency, GHz

Comparison of designed LNA with world’s analogues

Mimix XL1000-BD IUHFSE RAS (version 2)

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

25 30 35 40

Частота, ГГц

Коэф

фиц

иент

шум

а, д

Б

Расчет

Измерение

Calculated

Measured

Frequency, GHz

N

F, d

B

Intel Core2Duo, 2 threads, 3.4 GHz, 4 Gb RAM - ~ 20 - 25 minutes

AMD Phenom II X6 1090T, 6 threads, 3.2 GHz, 4Gb RAM – 120 sec (ADS 2008)

Intel Xeon X5690, 24 threads, 3.47 Ghz, 48 RAM (2 CPU) – 72 sec (ADS 2011)

AMD FX9 8150, 8-threads, 3.6 GHz, 12 Gb RAM – 57 sec

AMD Phenom II X6 110T, 6-threads, 3.3 Ghz, 8 Gb RAM – 53 sec

Intel Xeon E5-2687W, 32-threads, 3.1GHz, 32 Gb RAM (2 CPU) – 33 sec

Intel Core i7-3770K, 8-threads, 3.5 GHz, 8 Gb RAM – 25 sec

Evolution of calculation time

Conclusion

1. Custom Design flow based on EM calculations of entire layout is developed.

2. Custom model builder tool is created.

3. Effectiveness of developed design approach is proved experimentally.

4. First in Russia LNA MMICs with competitive specifications are successfully designed and manufactured in IUHFSE RAS.

Thank you for your attention

institute of ultra high frequency semiconductor electronics of russian academy of sciences design of...

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