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C. Bulutay Lecture 10Topics on Semiconductor Physics
� Interband Transitions in Bulk Se/c
� Momentum Matrix Element
In This Lecture:
� Momentum Matrix Element
� Polarization dependence
� Interband Transitions in Quantum Wells
� Intraband Transitions in Bulk & QWs
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C. Bulutay Lecture 10Topics on Semiconductor Physics
Interband Transitions in Bulk Se/c
As the photon momentum is
negligible compared to
electronic crystal momenta,
the transitions are (almost)
For parabolic bands:
the transitions are (almost)
vertical (kop=0)
[See, next page]
Ref: Singh
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C. Bulutay Lecture 10Topics on Semiconductor Physics
Momentum
Matrix Elements
vanishes when kop=0 due to
Bloch fn orthogonality
,
* 3
, ,
, ,
Predominantly we are interested in transitions between CB and VB
so that ,
ˆ ˆ
where
1 ( ) ( ); similarly for
op
c
c
c kc c
ik r
c k k
ik r
c k k
i f c
e p e e p d r
r e u rV
υυ
υ
υ
ψ ψ
ψ ψ
⋅
⋅
→ →
⋅ = ⋅
=
∫
�
� �
� �
� �
� �
� �
� �
3*
, ,
( )
( ) ( ) opcc
ik rik r ik r
c c k k
r
d rp u r e e k e u r
V
υ
υ
υυ υ υ
⋅− ⋅ ⋅= ∫�� ��� �
� �
�
� � �ℏ
Treat slowly-varying
(envelopes) and
the cell-periodic
parts separatelyunit cell volume xtal volume
3*
, ,
3( )*
, ,
( ) ( )
( ) ( )
opc
c
c op
c
ik rik r ik r
c k k
i k k k
c c k k
V
d ru r e e u r e
i V
d rp u r u r e
i
υ
υ
υ
υ
υ
υ υ
⋅− ⋅ ⋅
− + + ⋅
Ω
+ ∇
= ∇ Ω
∫
∫
∫
�� ��� �
� �
� � �
� �
�ℏ� �
�ℏ� � �
,
3
3*
, , ,( ) ( )
k k kc op
c op c
r
V
c k k k c k k
d r
V
d rp u r u r
i
υ
υ υ
δ
υ υδ
+
+Ω
= ∇ Ω
∫
∫
� � �
�
� � � � �
���������
�ℏ� � �
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C. Bulutay Lecture 10Topics on Semiconductor Physics
Electric dipole forbidden transitions
When certain pcv transition matrix element vanishes (due to some symmetry
reason etc.) this is termed as a electric dipole-forbidden-transition.
In this case higher-order contributions such as electric quadrupole and magnetic
dipole transitions become important. Compared to the electric dipole transitions
they are reduced in strength by a factor of (lattice constant/wavelength of light)2,
that requires very high frequencies (UV to X-rays)...that requires very high frequencies (UV to X-rays)...
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C. Bulutay Lecture 10Topics on Semiconductor Physics
Conduction Band:
,
Valence Bands (only HH, LH):
3 3 1 , ( ) ,
2 2 2
3 3 1
iS iS
X iY
↑ ↓
−= + ↑
( )
( )
0
Momentum-matrix parameter:
CB to HH Transitions:
3 3ˆ ˆ , ,
2 2 2
3 3 , 0,
2 2
3 3ˆ ˆ , ,
x x y z
x
x
mP iS p X iS p Y iS p Z P
PiS p x iy
iS p
PiS p x iy
= = = =
↑ = − +
↓ =
↓ − = −
ℏ
�
�
�
WATCH OUT:
No coupling of
the z-polarized
light between
Polarization Dependence
Recall se/c band edge states:
3 3 1 , ( ) ,
2 2 2
3 1 1 2 , ( ) ,
2 2 36
3 1 1 2 , ( )
2 2 36
X iY
X iY Z
X iY Z
− = − ↓
−= + ↓ + ↑
− = − ↑ + ↓
( )3 3 ˆ ˆ , ,2 2 2
3 3 , 0,
2 2
CB to LH Transition
xPiS p x iy
iS p
↓ − = −
↑ − =
�
�
( )
( )
s:
3 1 2ˆ , ,
2 2 3
3 1ˆ ˆ , ,
2 2 6
3 1 2ˆ , ,
2 2 3
3 1ˆ ˆ , ,
2 2 6
x
x
x
x
iS p P z
PiS p x iy
iS p P z
PiS p x iy
↑ =
↓ = − +
↓ − =
↑ − = −
�
�
�
�
light between
CB & HH
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C. Bulutay Lecture 10Topics on Semiconductor Physics
�For a cubic xtal what differentiates z from x or y?
�Recall that in defining the expansion basis vectors we assumed
electron wavevector to be along z direction
�For that reason we are also using the z-projection of the spin
Reflections on the polarization dependence
�Does that give enough support for singling out z from x or y direction?
�After all that’s just for the sake of formulation, say a convention
�Away from k=0 HH & LH become mixed
�So only at k=0 we could talk about such a selectivity
�But at k=0 we lose any sense of direction of the k-vector!
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C. Bulutay Lecture 10Topics on Semiconductor Physics
To Remind you the LK Hamiltonian
Ref: Chuang
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C. Bulutay Lecture 10Topics on Semiconductor Physics
Averaging over the polarization for bulk
�These considerations suggest us to consider unpolarized light
�Equivalently we shall consider electron wavevector to pointalong a general direction and average the matrix elementover the solid angle
Let the electron wavevector to be along a direction (θ,Φ):
For illustration consider CB-HH transition:
averaging over the solid angle
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C. Bulutay Lecture 10Topics on Semiconductor Physics
CB:
HH:
Ref: Chuang
Note that for ease of calculation we keep the spin parts in the new (rotated) coordinate system…
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C. Bulutay Lecture 10Topics on Semiconductor Physics
Consider, for instance optical transition from the CB of one spin, say
to either of the HH bands ; one of them is already zero
Ref: Chuang
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C. Bulutay Lecture 10Topics on Semiconductor Physics
Bulk Momentum Matrix Element for Unpolarized Light
Kane’s parameter,(not a surprise)
where
(not a surprise)
Alternatively, an energy parameter Ep can be defined as:
20 0
2
2, so that
6p b p
m mE P M E= =
ℏ
where
Ref: Chuang
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C. Bulutay Lecture 10Topics on Semiconductor Physics
The other polarizations, spin, and LH band
2
'
Same result is obtained for
ˆ ˆ ˆ ˆ For or (cubic symmetry)
For the other spin component of the CB,
bM
e y e z
iS
= =
↓
*
*
2'
' '
For the transition between the LH band (per spin),
3 1 3 ,
2 2iS ex iS ex↓ + ↓
*
2'
1,
2 2−
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C. Bulutay Lecture 10Topics on Semiconductor Physics
Joint Density of States (also called reduced DOS)
This is an important piece that appears inside total transition rate expressions
Single Parabolic Band DOS:
Ec
( )st1 BZ
2 2
*
* 3/ 2
( ) ( )
For a parabolic band: 2
m m
k
c
dos
N E E E k
kE E
m
σ
δ∈
= −
− =
−
∑ ∑�
�
ℏ
( )
*
st
* 3/ 2
2 3
2 2
* *
1
1 BZ
( )( ) 2 ,
1 1Between two parabolic CB and VB:
2
( ) ( ) ( )
r
dos c
m
g
e h
m
c c
k
m E EN E
kE
m m
N E k E k
N
υ υσ
π
ω
ω δ ω∈
−=
− = +
= − +∑ ∑�
ℏ
ℏℏ
�����
� �ℏ ℏ
* 3/ 2
2 3
( )( ) 2
r g
c
m Eυ
ωω
π
−=
ℏℏ
ℏ
Joint DOS of CB-VB:
Eg ωℏ
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C. Bulutay Lecture 10Topics on Semiconductor Physics
Absorption Rate (Final Expression)
With all these ingredients the bulk absorption rate for unpolarized lightbecomes:
JDOS
( )2
2
2
0
2 ( )ph
abs b c
e nW M N
mυ
πω
ωε=
ℏℏ
ℏ
* 3/ 2
2 3
( )( ) 2
r g
c
m EN υ
ωω
π
−=
ℏℏ
ℏ
JDOS
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C. Bulutay Lecture 10Topics on Semiconductor Physics
Radiative e-h Recombination Time: Emission
ωℏ
In the case of interband recombination rate of an e with a holeat the same k state, we integrate over all possible photon states
3D total photon DOS
0
For =0,
1Associated e-h radiative recombination time is
ph em spon
spon
n W W
Wτ
→
=
ωℏ
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C. Bulutay Lecture 10Topics on Semiconductor Physics
Interband Transitions in Quantum Wells
transitions between subbands derived from different bulk bands
CB1
CB2
HH1HH2
HH3LH1
Subband Wavefunctions
HH3LH1
Normalization
area Well
width
Due to mixing
in the VB
3D to 2D: Optical transitions are affected in two ways
� Form of JDOS
� Momentum matrix element; anisotropy is now genuine
Ref: Singh
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C. Bulutay Lecture 10Topics on Semiconductor Physics
Momentum Matrix Element in QWs
In going from 3D to 2D:
env. fn. overlap in-plane overlap
Cartesian component
Ref: Singh
env. fn. overlapalong growth dir.
[ Other term, acting on ( ) leaves 0 at the same state]n vma c cp g z u u kυ =�
Unlike 3D, polarization dependence exists in 2D
NotationTE (to growth axis): Electric field in QW plane
TM (to growth axis): Electric field along growth axis
in-plane overlap
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C. Bulutay Lecture 10Topics on Semiconductor Physics
Let the QW growth axis be z axis
TE (Optical electric field in xy plane)
Optical dipole matrix element is averaged over the azimuthal angle
From both HH bands to
Same results for
the other CB spins
From both LH bands to
Same results for
the other CB spins
not considered
not considered
Ref: Chuang
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C. Bulutay Lecture 10Topics on Semiconductor Physics
TM (Optical electric field along z axis)
Sum
Rules
Ref: Chuang
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C. Bulutay Lecture 10Topics on Semiconductor Physics
Back to Absorption Rate in QWs
JDOS in 2D:
Ref: Singh
Observe that even-odd parity transitions are not allowed due tovanishing of this overlap
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C. Bulutay Lecture 10Topics on Semiconductor Physics
Indirect Interband Transitions in Bulk
Common Indirect Se/c: Si, Ge, C, AlAs, GaP, AlP, SiC, AlN (zb)
2nd Order Matrix Element:
Intermediate
virtual state
summed overNo energy
cons.
Weight of these two
pathways 21
i nE E∝
−With photon energies smaller than the direct band gap intermediate transitions can occur since energy need not be conserved
Ref: Singh
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C. Bulutay Lecture 10Topics on Semiconductor Physics
Pathways which require phonon emission/absorption
Form of the matrix elements:
direct optical transitions
e-phonon scattering matrix elements due to optical phonon intervalley scatteringwith the associated matrix element:
abs.
em.
: Deformation potential
: Mass density
: Intervalley phonon frequency
( ) : phonon occupancy (BE distr.)
ij
ij
ij
D
n
ρ
ω
ω
direct optical transitions
Ref: Singh
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C. Bulutay Lecture 10Topics on Semiconductor Physics
For parabolic bands, the absorption rate results in:# equivalent
valleys
Photon-related Photon-related
matrix element
Note the contrast in Wabs
Direct Bandgap:
Indirect Bandgap:
In amorphous se/c, k-conservation requirement is relaxed (no periodicity, xtal momentum not a good quantum label)
This results in higher absorption coefficientRef: Singh
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C. Bulutay Lecture 10Topics on Semiconductor Physics
Intraband Transitions in Bulk Se/c
�As each band at a k-state is single-valued 1st order vertical intraband transitions are not possible
�Intraband transitions must involve some secondmechanism (phonon, ionized imp, defects...) tomechanism (phonon, ionized imp, defects...) toensure momentum conservation
�Intraband transitions are also known as free carrierabsorption and are effective in the cladding layers of lasers
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C. Bulutay Lecture 10Topics on Semiconductor Physics
Drude Model (to explain free carrier absorption)
w/o scattering no net energy xfer;e’s oscillate back and forth within the band
By introducing a scattering mechanism, energy gained by the ein one cycle will be partially lost in the form of, say phonon
* * * 2
0 0cos( )m x m x m eE tγ ω ω+ + =ɺɺ ɺ
in one cycle will be partially lost in the form of, say phononemission by the electron.
If the mobility is large (weak scattering) absorption coefficientbecomes small
2
1( )
1
α ωω
µ
∝
∝
ℏ
mobility
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C. Bulutay Lecture 10Topics on Semiconductor Physics
Intraband Transitions in Quantum Wells
CB2
CB1
�Since a number of subbands may originate from the same bulk band, certain inter-subband transitions (CB1-CB2) may betermed as intraband transitions in QWs
�Such inter-subband transitions have greatimportance for far infrared detectors andimportance for far infrared detectors andforms the basis of Quantum Cascade Lasers
orthogonal Approximately same for the CB
Ref: Singh
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C. Bulutay Lecture 10Topics on Semiconductor Physics
Momentum Matrix Element:
If the polarization lies on the QW plane, then due tothe orthogonality of the remaining envelope parts(g1,g2), pif=0
�Thus for EM wave polarized in the plane of the QW, inter-subband transition rate is zero (This can be relaxed under strong mixing of thecell-periodic parts as in the VB.)
� For EM wave polarized along the QW growth axis (say z), we get
Brings g1 to the same parity with g2 Ref: Singh