interbandtransitionsin bulkse/c momentum matrix element ...bulutay/573/notes/ders_10.pdf · c....

27
C. Bulutay Lecture 10 Topics on Semiconductor Physics Interband Transitions in Bulk Se/c Momentum Matrix Element In This Lecture: Polarization dependence Interband Transitions in Quantum Wells Intra band Transitions in Bulk & QWs

Upload: others

Post on 13-Feb-2021

3 views

Category:

Documents


0 download

TRANSCRIPT

  • C. Bulutay Lecture 10Topics on Semiconductor Physics

    � Interband Transitions in Bulk Se/c

    � Momentum Matrix Element

    In This Lecture:

    � Momentum Matrix Element

    � Polarization dependence

    � Interband Transitions in Quantum Wells

    � Intraband Transitions in Bulk & QWs

  • C. Bulutay Lecture 10Topics on Semiconductor Physics

    Interband Transitions in Bulk Se/c

    As the photon momentum is

    negligible compared to

    electronic crystal momenta,

    the transitions are (almost)

    For parabolic bands:

    the transitions are (almost)

    vertical (kop=0)

    [See, next page]

    Ref: Singh

  • C. Bulutay Lecture 10Topics on Semiconductor Physics

    Momentum

    Matrix Elements

    vanishes when kop=0 due to

    Bloch fn orthogonality

    ,

    * 3

    , ,

    , ,

    Predominantly we are interested in transitions between CB and VB

    so that ,

    ˆ ˆ

    where

    1 ( ) ( ); similarly for

    op

    c

    c

    c kc c

    ik r

    c k k

    ik r

    c k k

    i f c

    e p e e p d r

    r e u rV

    υυ

    υ

    υ

    ψ ψ

    ψ ψ

    → →

    ⋅ = ⋅

    =

    � �

    � �

    � �

    � �

    � �

    � �

    3*

    , ,

    ( )

    ( ) ( ) opcc

    ik rik r ik r

    c c k k

    r

    d rp u r e e k e u r

    V

    υ

    υ

    υυ υ υ

    ⋅− ⋅ ⋅= ∫�� ��� �

    � �

    � � �ℏ

    Treat slowly-varying

    (envelopes) and

    the cell-periodic

    parts separatelyunit cell volume xtal volume

    3*

    , ,

    3( )*

    , ,

    ( ) ( )

    ( ) ( )

    opc

    c

    c op

    c

    ik rik r ik r

    c k k

    i k k k

    c c k k

    V

    d ru r e e u r e

    i V

    d rp u r u r e

    i

    υ

    υ

    υ

    υ

    υ

    υ υ

    ⋅− ⋅ ⋅

    − + + ⋅

    + ∇

    = ∇ Ω

    �� ��� �

    � �

    � � �

    � �

    �ℏ� �

    �ℏ� � �

    ,

    3

    3*

    , , ,( ) ( )

    k k kc op

    c op c

    r

    V

    c k k k c k k

    d r

    V

    d rp u r u r

    i

    υ

    υ υ

    δ

    υ υδ

    +

    +Ω

    = ∇ Ω

    � � �

    � � � � �

    ���������

    �ℏ� � �

  • C. Bulutay Lecture 10Topics on Semiconductor Physics

    Electric dipole forbidden transitions

    When certain pcv transition matrix element vanishes (due to some symmetry

    reason etc.) this is termed as a electric dipole-forbidden-transition.

    In this case higher-order contributions such as electric quadrupole and magnetic

    dipole transitions become important. Compared to the electric dipole transitions

    they are reduced in strength by a factor of (lattice constant/wavelength of light)2,

    that requires very high frequencies (UV to X-rays)...that requires very high frequencies (UV to X-rays)...

  • C. Bulutay Lecture 10Topics on Semiconductor Physics

    Conduction Band:

    ,

    Valence Bands (only HH, LH):

    3 3 1 , ( ) ,

    2 2 2

    3 3 1

    iS iS

    X iY

    ↑ ↓

    −= + ↑

    ( )

    ( )

    0

    Momentum-matrix parameter:

    CB to HH Transitions:

    3 3ˆ ˆ , ,

    2 2 2

    3 3 , 0,

    2 2

    3 3ˆ ˆ , ,

    x x y z

    x

    x

    mP iS p X iS p Y iS p Z P

    PiS p x iy

    iS p

    PiS p x iy

    = = = =

    ↑ = − +

    ↓ =

    ↓ − = −

    WATCH OUT:

    No coupling of

    the z-polarized

    light between

    Polarization Dependence

    Recall se/c band edge states:

    3 3 1 , ( ) ,

    2 2 2

    3 1 1 2 , ( ) ,

    2 2 36

    3 1 1 2 , ( )

    2 2 36

    X iY

    X iY Z

    X iY Z

    − = − ↓

    −= + ↓ + ↑

    − = − ↑ + ↓

    ( )3 3 ˆ ˆ , ,2 2 2

    3 3 , 0,

    2 2

    CB to LH Transition

    xPiS p x iy

    iS p

    ↓ − = −

    ↑ − =

    ( )

    ( )

    s:

    3 1 2ˆ , ,

    2 2 3

    3 1ˆ ˆ , ,

    2 2 6

    3 1 2ˆ , ,

    2 2 3

    3 1ˆ ˆ , ,

    2 2 6

    x

    x

    x

    x

    iS p P z

    PiS p x iy

    iS p P z

    PiS p x iy

    ↑ =

    ↓ = − +

    ↓ − =

    ↑ − = −

    light between

    CB & HH

  • C. Bulutay Lecture 10Topics on Semiconductor Physics

    �For a cubic xtal what differentiates z from x or y?

    �Recall that in defining the expansion basis vectors we assumed

    electron wavevector to be along z direction

    �For that reason we are also using the z-projection of the spin

    Reflections on the polarization dependence

    �Does that give enough support for singling out z from x or y direction?

    �After all that’s just for the sake of formulation, say a convention

    �Away from k=0 HH & LH become mixed

    �So only at k=0 we could talk about such a selectivity

    �But at k=0 we lose any sense of direction of the k-vector!

  • C. Bulutay Lecture 10Topics on Semiconductor Physics

    To Remind you the LK Hamiltonian

    Ref: Chuang

  • C. Bulutay Lecture 10Topics on Semiconductor Physics

    Averaging over the polarization for bulk

    �These considerations suggest us to consider unpolarized light

    �Equivalently we shall consider electron wavevector to pointalong a general direction and average the matrix elementover the solid angle

    Let the electron wavevector to be along a direction (θ,Φ):

    For illustration consider CB-HH transition:

    averaging over the solid angle

  • C. Bulutay Lecture 10Topics on Semiconductor Physics

    CB:

    HH:

    Ref: Chuang

    Note that for ease of calculation we keep the spin parts in the new (rotated) coordinate system…

  • C. Bulutay Lecture 10Topics on Semiconductor Physics

    Consider, for instance optical transition from the CB of one spin, say

    to either of the HH bands ; one of them is already zero

    Ref: Chuang

  • C. Bulutay Lecture 10Topics on Semiconductor Physics

    Bulk Momentum Matrix Element for Unpolarized Light

    Kane’s parameter,(not a surprise)

    where

    (not a surprise)

    Alternatively, an energy parameter Ep can be defined as:

    20 0

    2

    2, so that

    6p b p

    m mE P M E= =

    where

    Ref: Chuang

  • C. Bulutay Lecture 10Topics on Semiconductor Physics

    The other polarizations, spin, and LH band

    2

    '

    Same result is obtained for

    ˆ ˆ ˆ ˆ For or (cubic symmetry)

    For the other spin component of the CB,

    bM

    e y e z

    iS

    = =

    *

    *

    2'

    ' '

    For the transition between the LH band (per spin),

    3 1 3 ,

    2 2iS ex iS ex↓ + ↓

    *

    2'

    1,

    2 2−

  • C. Bulutay Lecture 10Topics on Semiconductor Physics

    Joint Density of States (also called reduced DOS)

    This is an important piece that appears inside total transition rate expressions

    Single Parabolic Band DOS:

    Ec

    ( )st1 BZ

    2 2

    *

    * 3/ 2

    ( ) ( )

    For a parabolic band: 2

    m m

    k

    c

    dos

    N E E E k

    kE E

    m

    σ

    δ∈

    = −

    − =

    ∑ ∑�

    ( )

    *

    st

    * 3/ 2

    2 3

    2 2

    * *

    1

    1 BZ

    ( )( ) 2 ,

    1 1Between two parabolic CB and VB:

    2

    ( ) ( ) ( )

    r

    dos c

    m

    g

    e h

    m

    c c

    k

    m E EN E

    kE

    m m

    N E k E k

    N

    υ υσ

    π

    ω

    ω δ ω∈

    −=

    − = +

    = − +∑ ∑�

    ℏℏ

    �����

    � �ℏ ℏ

    * 3/ 2

    2 3

    ( )( ) 2

    r g

    c

    m Eυ

    ωω

    π

    −=

    ℏℏ

    Joint DOS of CB-VB:

    Eg ωℏ

  • C. Bulutay Lecture 10Topics on Semiconductor Physics

    Absorption Rate (Final Expression)

    With all these ingredients the bulk absorption rate for unpolarized lightbecomes:

    JDOS

    ( )2

    2

    2

    0

    2 ( )ph

    abs b c

    e nW M N

    πω

    ωε=

    ℏℏ

    * 3/ 2

    2 3

    ( )( ) 2

    r g

    c

    m EN υ

    ωω

    π

    −=

    ℏℏ

    JDOS

  • C. Bulutay Lecture 10Topics on Semiconductor Physics

    Radiative e-h Recombination Time: Emission

    ωℏ

    In the case of interband recombination rate of an e with a holeat the same k state, we integrate over all possible photon states

    3D total photon DOS

    0

    For =0,

    1Associated e-h radiative recombination time is

    ph em spon

    spon

    n W W

    =

    ωℏ

  • C. Bulutay Lecture 10Topics on Semiconductor Physics

    Interband Transitions in Quantum Wells

    transitions between subbands derived from different bulk bands

    CB1

    CB2

    HH1HH2

    HH3LH1

    Subband Wavefunctions

    HH3LH1

    Normalization

    area Well

    width

    Due to mixing

    in the VB

    3D to 2D: Optical transitions are affected in two ways

    � Form of JDOS

    � Momentum matrix element; anisotropy is now genuine

    Ref: Singh

  • C. Bulutay Lecture 10Topics on Semiconductor Physics

    Momentum Matrix Element in QWs

    In going from 3D to 2D:

    env. fn. overlap in-plane overlap

    Cartesian component

    Ref: Singh

    env. fn. overlapalong growth dir.

    [ Other term, acting on ( ) leaves 0 at the same state]n vma c cp g z u u kυ =�

    Unlike 3D, polarization dependence exists in 2D

    NotationTE (to growth axis): Electric field in QW plane

    TM (to growth axis): Electric field along growth axis

    in-plane overlap

  • C. Bulutay Lecture 10Topics on Semiconductor Physics

    Let the QW growth axis be z axis

    TE (Optical electric field in xy plane)

    Optical dipole matrix element is averaged over the azimuthal angle

    From both HH bands to

    Same results for

    the other CB spins

    From both LH bands to

    Same results for

    the other CB spins

    not considered

    not considered

    Ref: Chuang

  • C. Bulutay Lecture 10Topics on Semiconductor Physics

    TM (Optical electric field along z axis)

    Sum

    Rules

    Ref: Chuang

  • C. Bulutay Lecture 10Topics on Semiconductor Physics

    Back to Absorption Rate in QWs

    JDOS in 2D:

    Ref: Singh

    Observe that even-odd parity transitions are not allowed due tovanishing of this overlap

  • C. Bulutay Lecture 10Topics on Semiconductor Physics

    Indirect Interband Transitions in Bulk

    Common Indirect Se/c: Si, Ge, C, AlAs, GaP, AlP, SiC, AlN (zb)

    2nd Order Matrix Element:

    Intermediate

    virtual state

    summed overNo energy

    cons.

    Weight of these two

    pathways 21

    i nE E∝

    −With photon energies smaller than the direct band gap intermediate transitions can occur since energy need not be conserved

    Ref: Singh

  • C. Bulutay Lecture 10Topics on Semiconductor Physics

    Pathways which require phonon emission/absorption

    Form of the matrix elements:

    direct optical transitions

    e-phonon scattering matrix elements due to optical phonon intervalley scatteringwith the associated matrix element:

    abs.

    em.

    : Deformation potential

    : Mass density

    : Intervalley phonon frequency

    ( ) : phonon occupancy (BE distr.)

    ij

    ij

    ij

    D

    n

    ρ

    ω

    ω

    direct optical transitions

    Ref: Singh

  • C. Bulutay Lecture 10Topics on Semiconductor Physics

    For parabolic bands, the absorption rate results in:# equivalent

    valleys

    Photon-related Photon-related

    matrix element

    Note the contrast in Wabs

    Direct Bandgap:

    Indirect Bandgap:

    In amorphous se/c, k-conservation requirement is relaxed (no periodicity, xtal momentum not a good quantum label)

    This results in higher absorption coefficientRef: Singh

  • C. Bulutay Lecture 10Topics on Semiconductor Physics

    Intraband Transitions in Bulk Se/c

    �As each band at a k-state is single-valued 1st order vertical intraband transitions are not possible

    �Intraband transitions must involve some secondmechanism (phonon, ionized imp, defects...) tomechanism (phonon, ionized imp, defects...) toensure momentum conservation

    �Intraband transitions are also known as free carrierabsorption and are effective in the cladding layers of lasers

  • C. Bulutay Lecture 10Topics on Semiconductor Physics

    Drude Model (to explain free carrier absorption)

    w/o scattering no net energy xfer;e’s oscillate back and forth within the band

    By introducing a scattering mechanism, energy gained by the ein one cycle will be partially lost in the form of, say phonon

    * * * 2

    0 0cos( )m x m x m eE tγ ω ω+ + =ɺɺ ɺ

    in one cycle will be partially lost in the form of, say phononemission by the electron.

    If the mobility is large (weak scattering) absorption coefficientbecomes small

    2

    1( )

    1

    α ωω

    µ

    mobility

  • C. Bulutay Lecture 10Topics on Semiconductor Physics

    Intraband Transitions in Quantum Wells

    CB2

    CB1

    �Since a number of subbands may originate from the same bulk band, certain inter-subband transitions (CB1-CB2) may betermed as intraband transitions in QWs

    �Such inter-subband transitions have greatimportance for far infrared detectors andimportance for far infrared detectors andforms the basis of Quantum Cascade Lasers

    orthogonal Approximately same for the CB

    Ref: Singh

  • C. Bulutay Lecture 10Topics on Semiconductor Physics

    Momentum Matrix Element:

    If the polarization lies on the QW plane, then due tothe orthogonality of the remaining envelope parts(g1,g2), pif=0

    �Thus for EM wave polarized in the plane of the QW, inter-subband transition rate is zero (This can be relaxed under strong mixing of thecell-periodic parts as in the VB.)

    � For EM wave polarized along the QW growth axis (say z), we get

    Brings g1 to the same parity with g2 Ref: Singh