international workshop on nitride semiconductors (kyoto ... · 2196 contents...
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Contents
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Papers presented at the
International Workshop on
Nitride Semiconductors 2006 (IWN 2006)Kyoto, Japan, 22-27 October 2006
Guest Editors: Katsuhiro Akimoto, Shigefusa Chichibu, and Takashi Suemasu
Preface 2204
Workshop Committees 2205
Sponsors 2208
Bulk/LEO/HVPE
Solution growth ofA1N single crystal using Cu solvent under atmospheric pressure nitrogenK. Kamei, Y. Shirai, T. Tanaka, N. Okada, A. Yauchi, and H. Amano 2211-2214
Thermal and electrical properties of high-quality freestanding GaN wafers with high carrier
concentration
Yuichi Oshima, Takehiro Yoshida, Takeshi Eri, Masatomo Shibata,
and Tomoyoshi Mishima 2215-2218
Investigations ofthe growth conditions for GaN-bulk crystals grown by the sublimation techniqueH.-J. Rost, D. Siche, R. Miiller, D. Gogova, T. Schulz, M. Albrecht, and R. Fornari 2219-2222
Initial growth stage in PVT growth ofA1N on SiC substrates: Influence of A1203
Paul Heimann, C. Pfeiffer, M. Bickennann, B. M. Epelbaum, S. Nagata, and A. Winnacker . . 2223-2226
LPE growth ofA1N single crystal using cold crucible under atmospheric nitrogen gas pressure
T. Tanaka, N. Yashiro, Y. Shirai, K. Kamei, and A. Yauchi 2227-2230
Self-separated freestanding GaN grown on patterned substrate by Hydride Vapor Phase Epitaxy
Chih-Ming Lai, Wen Yu Liu, Jenq-Dar Tsay, Po Chun Liu, Yih-Der Guo,
Hsin-Hsiung Huang, Yu Hsiang Chang, and Jul Chin Yeh 2231-2235
Platelets and needles: two habits ofpressure grown GaN crystalsM. Bockowski, I. Grzegory, B. Lucznik, G. Kamler, S. Krukowski, M. Wroblewski,
P. Kwiatkowski, K. Jasik, and S, Porowski 2236-2239
Characterization ofAlGaN/InGaN/AlGaN heterostructure with selective area growth ofTe-doped
AlGaN cladding layer grown by mixed-source HVPE
K. S. Jang, K. H. Kim, S. L. Hwang, H. S. Jeon, M. Yang, H. S. Ahn, S. W. Kim,
Y. Honda, M. Yamaguchi, N. Sawaki, S.H.Jang, S.M.Lee, and M. Koike 2240-2243
Growth of high-quality 1-inch diameter A1N single crystal by sublimation method
N. Mizuhara, M. Miyanaga, S. Fujiwara, H. Nakahata, and T. Kawase 2244-2247
Fully unstrained GaN on sacrificial A1N layers by nano-heteroepitaxy
K. Tonisch, V. Cimalla, F. Niebelschiitz, H. Romanus, M. Eickhoff, and O. Ambacher .... 2248-2251
High temperature growth ofA1N film by LP-HVPE
K. Tsujisawa, S. Kishino, Y. H.Liu, H. Miyake, K. Hiramatsu, T, Shibata, and M. Tanaka. . .2252-2255
Bending in HVPE grown GaN films: origin and reduction possibilities
T. Paskova, L. Becker, T. Bottcher, D. Hommel, P. P. Paskov, and B. Monemar 2256-2259
2194 Contents
Growth ofhighly resistive Ga-polar GaN by LP-MOVPE
SeijiMita, Ramon Collazo, Rafael Dalmau, and Zlatko Sitar 2260-2263
Study on the sublimation growth of GaN using different powder sources and investigation on the
sublimation behaviour ofGaN powder by means ofthermogravimetryB. Kallinger, E. Meissner, D. Seng, G. Sun, S. Hussy, J. Friedrich, and G. Mtiller 2264-2267
Free standing GaN layers with GaN nanorod buffer layerH.J. Lee, S.W.Lee, H.Goto,Hyo-Jong Lee, J. S. Ha, M.W.Cho, and T.Yao 2268-2271
Void assisted dislocation reduction in A1N and AlGaN byhigh temperature MOVPE
K. Balakrishnan, K. Iida, A. Bandoh, M.Iwaya, S. Kamiyama, H. Amano, and I. Akasaki . . .2272-2276
Optimization ofHVPE growth of freestanding c-plane GaN layers using (100) y-LiA102 substrates
E. Richter, Ch. Hennig, L. Wang, U. Zeimer, M. Weyers, and G. Trankle 2277-2280
Growth ofbulk aluminum nitride crystalsH. Helava, S. J. Davis, G. D. Huminic, M. G. Ramm, 0. V. Avdeev, I. S. Barash,T. Yu. Chemekova, E. N. Mokhov, S. S.Nagalyuk, A. D. Roenkov, A. S. Segal,Yu.A. Vodakov,andYu.N. Makarov 2281-2284
Novel growth and crystals
Nitride film growth morphology using remote plasma enhanced chemical vapor depositionM. Wintrebert-Fouquet, K. S. A. Butcher, P. P.-T. Chen, and R. Wuhrer 2285-2288
Molecular dynamics simulation ofthermal conductivity ofGaN/AIN quantum dot superlatticesTakahiro Kawamura, Yoshihiro Kangawa, and Koichi Kakimoto 2289-2292
First-principle study on crystal growth of Ga and N layers on GaN substrate
K. Doi, N. Maida, K. Kimura, and A. Tachibana 2293-2296
In situ gravimetric monitoring of decomposition rate on the surface of (0001) c-plane sapphirefor the high temperature growth ofA1N
K. Akiyama, T. Araki, H. Murakami, Y. Kumagai, and A. Koukitu 2297-2300
Novel HVPE technology to grow nanometer thick GaN, A1N, AlGaN layers and multi-layeredstructures
Alexander Usikov, Lisa Shapovalova, Oleg Kovalenkov, Vitali Sukhoveev, Anna Volkova,Vladimir Ivantsov, Vladimir Dmitriev, Fanyu Meng, Ranjan Datta, Subhash Mahajan,Eric Readinger, Gregory Garrett, Michael Wrahack, and Michael Reshchikov 2301-2305
Growth ofhexagonal GaN films on the nitridated p-Ga203 substrates using RF-MBE
S. Ohira, N.Suzuki, H. MinamLK. TakahashLT. Araki, and Y.Nanishi 2306-2309
Fabrication and characterization of transparent conductive Sn-doped p-Ga203 single crystalN. Suzuki, S. Ohira, M. Tanaka, T. Sugawara, K. Nakajima, and T. Shishido 2310-2313
Metal catalyst enhanced growth ofhigh qualityand density GaN dots on Si(l 11) by implant source
growth
Ryan Buckmaster, Takenari Goto, Takashi Hanada, Katsushi Fujii, Takashi Kato,and Takafumi Yao 2314-2317
MBE growth ofcubic AlJni-^N and ALGa^In^N lattice matched to GaN
D. J. As, M. Schnietz, J. Schfirmann, S. Potthast, J.W. Gerlach, J. Vogt, andK. Lischka.. . .
2318-2321
Effect ofsubstrate surface on GaN dot structure grown on Si(l 11) by droplet epitaxyHiroaki Otsubo, Toshiyuki Kondo, Yo Yamamoto, Takahiro Maruyama,
and Shigeya Naritsuka 2322-2325
GaAs/c-GaN/GaAs multi-layered structure fabricated by using RF-plasma source nitridation
techniqueY. Yamamoto, M. Mori, H. Otsubo, T. Maruyama, and S. Naritsuka 2326-2329
Contents 2195
Heterostructures and nanostructures
Band offset measurements ofthe pulsed-laser-deposition-grown Sc203 (11 l)/GaN (0001) hetero-
structure by X-ray photoelectron spectroscopy
Chang Liu, Eng Fong Chor, Leng Seow Tan, and Yufeng Dong 2330-2333
Subband structure and transport properties of two-dimensional electron gas in Al^Gaj _,N/GaN
heterostructures
Xiuxun Han, Yoshio Honda, Tetsuo Narita, Masahito Yamaguchi, and Nobuhiko Sawaki. . . 2334-2337
InGaN/GaN quantum-well nanocolumn crystals on pillared Si substrate with InN as interlayerF. R. Hu, K. Ochi, Y. Zhao, and K. Hane 2338-2341
Vibrational modes and strain in GaN/AIN quantum dot stacks: dependence on spacer thickness
J. Fresneda, A. Cros, J. M. Llorens, A. Garcia-Cristobal, A. Cantarero, B. Amstatt,
E. Bellet-Amalric, and B. Daudin 2342-2345
Synthesis of Ill-nitride microcrystals using metal-EDTA complexes
Y.H.Liu, S. Koide.H.Miyake,K. Hiramatsu, A. Nakamura, andN.Nambu 2346-2349
Evidence of quantum dot-like nano-objects in InGaN quantum wells provided by narrow
photoluminescence spectra from localized exciton
H. Gotoh, T. Akasaka, T. Tawara, Y. Kobayashi, T. Makimoto, and H. Nakano 2350-2353
XPS study ofsurface potential in AlGaN/GaN heterostructure with Cat-CVD SiN passivationN. Onojima,M. Higashiwaki, T.Matsui, T. Mimura, J. Suda, andT. Kimoto 2354-2357
Stimulated emission from free-standing GaN/Si micro-disk structures
H. W. Choi, K. N. Hui, P. T. Lai, P. Chen, X. H. Zhang, J. H. Teng, S. Tripathy,
and S.J. Chua 2358-2361
Lateral diffusion ofphotogenerated carriers in InGaN/GaN heterostructures observed
by PL measurements
C. Vierheilig, H. Braun, U. T. Schwarz, W. Wegscheider, E. Baur, U. StrauG,
andV.Harle 2362-2365
Growth and field emission of GaN nanowires grown by metal organic chemical vapour depositionY. Inoue, A. Tajima, S. Takeda, A. Ishida, H. Mimura, and S. Sakakibara 2366-2370
Formation process ofsharp-pointed structures on GaN nanorods during RF-MBE growthand their field emission characteristics
M, Terayama, S. Hasegawa, K. Uchida, M. Ishimaru, Y. Hirotsu, and H. Asahi 2371-2374
Depth distribution of strain in GaN/AlN/SiC heterostructures by DUV micro-Raman spectroscopy
T. Kitamura, S. Nakashima, T. Mitani, N. Nakamura, K. Furuta, and H. Okumura 2375-2378
Evaluation of strain in GaN/AIN quantum dots by means ofresonant Raman scattering: the effect
ofcapping
A. Cros, J. A. Budagosky, N. Garro, A. Cantarero, J. Coraux, H. Renevier, M. G. Proietti,
V. Favre-Nicolin, and B. Daudin 2379-2382
Dependence of In mole fraction in InGaN on GaN facets
K.Nakao,D.B. Li, Y.H.Liu, H. Miyake, and K. Hiramatsu 2383-2386
InAsN quantum dots grown on GaAs(OOl) substrates by MOVPE
S.Kuboya,Q.T.Thieu,F.Nakajirna,R. Katayama, andK. Onabe 2387-2390
Intersubband transitions in InGaAsN/AlGaAs quantum wells with a high confinement energy
Jean-Yves Duboz 2391-
2196 Contents
Characterization of electrical properties ofAlGaN/GaN heterostructures grown on vicinal substrates
by rf-MBE
X. Q. Shen, K. Furuta, N. Nakamura, and H. Okumura 2395-2398
Nonlinear piezoelectric properties of GaN quantum dots nucleated at the edge ofthreadingdislocations
Pawel Dhrzewski, Toby D. Young, Gregorz Jurczak, and Jacek A, Majewski 2399-2402
FE simulation of InGaN QD formation at the edge ofthreading dislocation in GaN
Pawel Dfuzewski, Amina Belkadi, Jun Chen, Pierre Ruterana, and Gerard Nouet 2403-2406
Two-step growth of InGaN quantum dots and application to light emitters
T. Yamaguchi, J. Dennemarck, C. Tessarek, K. Sebald, S. Gangopadhyay, J. Falta,J. Gutowski, S. Figge, and D. Hommel 2407-2410
Nitride-organic semiconductor hybrid heterostructures for optoelectronic devices
Hyunjin Kim, Cuong Dang, Yoon-Kyu Song, Qiang Zhang, William Patterson,
A. V. Nurmikko, K.-K. Kim, S.-Y. Song, and Jung Han 2411-2414
InN and InN-rich InGaN
Polarity control ofInN grown by MOVPE on sapphire (0001)W.J. Wang, K. Sugita, Y. Nagai, Y. Houchin, A. Hashimoto, and A. Yamamoto 2415-2418
A new system for growing thick InN layers by hydride vapor phase epitaxyJ. Kikuchi, Y. Nishizawa, H. Murakami, Y. Kumagai, and A. Koukitu 2419-2422
Characterisation of multiple carrier transport in indium nitride grown by molecular beam epitaxyTamara B. Fehlberg, Gilberto A. Umana-Membreno, Chad S. Gallinat, Gregor Koblmuller,Sarah Bernardis, Brett D. Nener, Giacinta Parish, and James S. Speck 2423-2427
Alloy composition fluctuation and band edge energy structure of In-rich IntGai_:cN layersinvestigated by systematic spectroscopy
Yoshihiro Ishitani, Masayuki Fujiwara, Takuro Shinada, Xinqiang Wang, Son-Bek Che,and Akihiko Yoshikawa 2428-2432
Incorporation ofself assembled In-rich InGaN nanostructure to achieve redshift in InGaN/GaN
heterostructures
C. B. Soh, H. Hartono, P. Chen, and S. J. Chua 2433-2436
Structural and optical characterization of high In content cubic InGaN on GaAs(OOl) substrates
by RF-MBE
Teruyuki Nakamura, Yuta Endo, Ryuji Katayama, Hiroyuki Yaguchi, and Kentaro Onabe. . .
2437-2440
Characterization of MOVPE InN films grown on 3c-SiC/Si(l 11) templatesM. S. Cho, N. Sawazaki, K. Sugita, A. Hashimoto, A. Yamamoto, and Y. Ito 2441-2444
Localized plasmons at pores and clusters within inhomogeneous indium nitride films
T. V. Shubina, A. Vasson, J. Leymarie, N. A. Gippius, V. N. Jmerik, B. Monemar,and S. V. Ivanov 2445-2448
InN clusters in In,Gai_vN quantumwells: analysis ofbond lengthsH. Lei, X. J. Jiang, J. Chen, I. Belabbas, P. Ruterana, and G. Nouet 2449-2452
Origins ofn-type residual carriers in RF-MOMBE grown InN layersKosuke Iwao, Akio Yamamoto, and Akihiro Hashimoto 2453-2456
Adduct formation ofCP2Mg with NH3 in MOVPE growth of Mg-doped InN
Y. Nagai, H. Niwa, A. Hashimoto, and A. Yamamoto 2457-2460
Contents 2197
Crystallographic deterioration ofMOVPE InN during the growth
K. Sugita, Y. Nagai, Y. Houchin, A. Hashimoto, and A. Yamamoto 2461-2464
Unusual photoluminescence properties ofvertically aligned InN nanorods grown by plasma-assistedmolecular-beam epitaxy
C.-H. Shen, H.-Y. Chen, H.-W. Lin, C.-Y. Wu, S. Gwo, A. A. Klochikhin,and V. Yu. Davydov 2465-2468
Comparison of structural perfection of InN layers and InN nanorods grown on the c- and r-planesofAl203
Z. Liliental-Weber, H. Lu, W. J. Schaff, O. Kryliouk, H. J. Park, J. Mangum,
and T. Anderson 2469-2473
Effects ofnon-stoichiometry and compensation on fundamental parameters ofheavily-doped InN
T. V. Shubina, M. M. Glazov, S. V. Ivanov, A. Vasson, J. Leymarie, B. Monemar, T. Araki,
H.Naoi,andY.Nanishi 2474-2477
Polarity dependence ofIn-rich InGaN ternary alloys grown by RF-MBET. Shinada, S. B. Che, T. Mizuno, Y. Ishitani, and A. Yoshikawa 2478-2481
AlN and AlGaN opticalproperties
AlGaN deep ultraviolet LEDs on bulk AlN substrates
Zaiyuan Ren, Q. Sun, S.-Y. Kwon, J. Han, K. Davitt, Y. K. Song, A. V. Nurmikko,
W. Liu, J. Smart, and L. Schowalter 2482-2485
Boron addition effects on aluminum nitride fabricated by radio-frequency plasma-assisted molecularbeam epitaxy
Masashi Yamashita, Masato Yoshiya, Yukari Ishikawa, Hitoshi Ohsato,
and Noriyoshi Shibata 2486-2489
Bright electron emission from Si-doped AlN thin films
A.Kishimoto,Y.Inou,T.Kita, and O. Wada 2490-2493
Structural and optical properties of Si-doped AlGaN/AIN multiple quantum wells grown by MOVPE
Da-Bing Li, Takuya Katsuno, Masakazu Aoki, Hideto Miyake, Kazumasa Hiramatsu,
and Tomohiko Shibata 2494-2497
Continuous order-disorder phase transition (2 x 2) —» (1 x 1) on the (0001)A1N surface
V. G. Mansurov, Yu. G. Galitsyn, A. Yu. Nikitin, E. A. Kolosovsky, K. S. Zhuravlev,
Z. Osvath, L. Dobos, Z. E. Horvath, and B. Pecz 2498-2501
Mg-doped high-quality ALGa^N (x = 0 - 1) grown by high-temperature metal-organic vapor
phase epitaxyM. Imura, N. Kato, N. Okada, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano,
I. Akasaki, T. Noro, T. Takagi, and A. Bandoh 2502-2505
The surface diffusion of Ga species on an AlGaN facet structure in low pressure MOVPE
Tetuso Narita, Yoshio Honda, Masahito Yamaguchi, and Nobuhiko Sawaki 2506-2509
Nonpolar and semipolar nitrides
Observations on surface morphologies and dislocations ofa-plane GaN grown by metal organicchemical vapor deposition
T. S. Ko, T. C. Wang, H. G. Chen, R. C. Gao, G. S. Huang, T. C. Lu, H. C. Kuo,
andS. C.Wang 2510-2514
Phonon dispersion in GaN/AIN non-polar quantum wells; confinement and anisotropyA. Cros andF. Pomer 2515-2518
2198 Contents
Material and optical properties of Trenched Epitaxial Lateral Overgrowth ofa-plane GaN
Te-Chung Wang, Tien-Chang Lu, Tsung-Shine Ko, Hao-Chung Kuo, Hou-Guang Chen,Min Yu, Chang-Cheng Chuo, Zheng-Hong Lee, and Sing-Chung Wang 2519-2523
Reduced structural defect densities in a-plane GaN layers on r-plane sapphire through buffer layerengineering
R. Armitage, H. Hirayama, andY. Kondo 2524-2527
Microstructure of a-plane AlN grown on r-plane sapphire and on patterned AlN templatesby metalorganic vapor phase epitaxy
N. Okada, M. Imura, T. Nagai, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano,I. Akasaki, H. Maruyama, T. Noro, T. Takagi, and A. Bandoh 2528-2531
Growth of thick a-plane GaN on r-plane sapphire by direct synthesis method
K. Nishino, A. Sakamoto, and S. Sakai 2532-2535
Nonpolar a- and m-plane bulk GaN sliced from boules: structural and optical characteristics
T. Paskova, R. Kroeger, D. Hommel, P. P. Paskov, B. Monemar, E. Preble, A. Hanser,N. M. Williams, and M. Tutor 2536-2539
Direct growth ofa-plane GaN on r-plane sapphire substrate by metalorganic vapor phase epitaxyMasahiro Araki, Katsuyuki Hoshino, and Kazuyuki Tadatomo 2540-2543
Cathodolummescence characterization of [1120]-oriented InGaN/GaN thin films grownon r-plane sapphire substrates by metalorganic vapor-phase epitaxy
K. Kusakabe, T. Furuzuki, and K. Ohkawa 2544-2547
Electrical and optical characterization ofM-plane GaN films grown on LiA102 substrates
C. Rivera, P. Misra, J. L. Pau, E. Mufioz, O. Brandt, H. T. Grahn, and K. H. Ploog 2548-2551
Reduction ofthreading dislocations in nonpolar 4H-A1N on 4H-SiC(l 120) grown
by molecular-beam epitaxy with slightly Al-rich conditions
M. Horita, J. Suda, and T. Kimoto 2552-2555
Microstructure of^4-plane InN grown on .R-plane sapphire by ECR-MBES. Watanabe, Y. Kumagai, A. Tsuyuguchi, H. Na, H. Naoi, T. Araki, andY. Nanishi 2556-2559
Growth ofA-plane (1120) In-rich InGaN on if-plane (1022) sapphire by RF-MBE
M.Noda, Y. Kumagai, S. Takado, D. Muto, H.Na,H. Naoi, T. Araki, andY. Nanishi 2560-2563
Defect structure of a-plane GaN grown by hydride andmetal-organic vapor phase epitaxyon r-plane sapphire
R. KrOger, T, Paskova, B. Monemar, S. Figge, D. Hommel, andA. Rosenauer 2564-2567
Defects, structural properties and doping
Evaluation of dislocation-related defects in GaN using deep-level transient spectroscopyYutaka Tokuda, Youichi Matuoka, Kazuhiro Yoshida, Hiroyuki Ueda, Osamu Ishiguro,
Narimasa Soejima, and Tetsu Kachi 2568-2571
Annihilation ofthreading dislocations in strain relaxed nano-porous GaN template for high quality
GaN growthH. Hartono.C. B, Son, S.J. Chua, and E. A. Fitzgerald 2572-2575
Practical issues in carrier-contrast imaging ofGaN structures
J. Sumner, R. A. Oliver, M. J. Kappers, and C. J. Humphreys 2576-2580
Photo-enhanced reactivation ofSi donors deactivated byplasma-induced defects in n-type GaN
Seiji Nakamura, Yuki Ikadai, Masayuki Suda, Michihiko Suhara, and Tsugunori Okumura.. .
2581-2584
Contents 2199
Leak current in high resistive GaN buffer layer and its light responsiveness
T. Tanaka, Y. Moriya, M. Sahara, T. Yukimoto, H. Kamogawa, Y. Otoki, and T. Mishima.. .
2585-2588
Effects of proton irradiation on electrical and optical properties ofn-InN
V. V. Emtsev, V. Yu. Davydov, A. A. Klochikhin, A. V. Sakharov, A. N. Smirnov,
V. V. Kozlovskii, C.-L. Wu, C.-H. Shen, and S. Gwo 2589-2592
Ionization energy ofGaN point defectsA. Bere, I. Belabbas, G. Nouet, P. Ruterana, J. Chen, G. Segda, and J. Koulidiati 2593-2596
Impact ofpolarity control and related defects on the electrical properties of GaN grown by MOVPE
RCollazo, S.Mita,R.Dalmau,andZ. Sitar 2597-2600
Two-electron transition spectroscopy of shallow donors in bulk GaN
P. P. Paskov, B.Monemar, A. Toropov, J. P. Bergman, and A. Usui 2601-2604
Photoluminescence excitation spectroscopy of Er3* ions in cubic GaN: Er
V. Glukhanyuk, H. Przybylinska, and A. Kozanecki 2605-2608
Processing and contacts
Defect-selective etching ofaluminum nitride single crystalsM. Bickermann, S. Schmidt, B. M, Epelbaum, P. Heimann, S. Nagata, and A. Winnacker
. . .2609-2612
Implantation damage recovery and carrier activation studies of Si-implanted Alo.isGa0.82N
by temperature dependent Hall-effect measurements
Mee-Yi Ryu, Y. K. Yeo, and Robert L. Hengehold 2613-2616
Characterization of free-standing GaN substrates prepared by self lift-off
S. W. Lee, H. Goto, T. Minegishi, W. H. Lee, J. S. Ha, H. J. Lee, Hyo-jong Lee, S. H. Lee,
T. Goto, T.Hanada,M.W. Cho, and T.Yao 2617-2620
Impact of Si+ implantation on reduction ofcontact resistance in Ti/Al contact to GaN
M. Satoh, N. Itoh, K. Nomoto, T. Nakamura, and T. Mishima 2621-2624
Fabrication ofreflective GaN mesa sidewalls for the application to high extraction efficiency LEDs
Jae-Soong Lee, Joonhee Lee, Sunghwan Kim, and Heonsu Jeon 2625-2628
Sensing dynamics and mechanism ofa Pd/AlGaN/GaN Schottky diode type hydrogen sensor
Masamichi Akazawa and Hideki Hasegawa 2629-2633
Inductively coupledplasma etching ofGaN using SiCL/CyAr for submicron-sized features
fabrication
R. Dylewicz, R. A. Hogg, P. W. Fry, P. J. Parbrook, R, Airey, A. Tahraoui, and S. Patela . . . 2634-2637
Self-separation ofthick two inch GaN layers grown by HVPE on sapphire using epitaxial lateral
overgrowth with masks containing tungsten
Ch. Hennig, E. Richter, M. Weyers, and G. Trankle 2638-2641
Photo-catalysis effect ofIII-V nitride film
Masatomo Sumiya, Keisuke Ohara, Takeo Ohsawa, Yu. Kawai, Masato Shirai,Shunro Fuke, Hideomi Koinuma, andYuji Matsumoto 2642-2645
Comparison ofNi/Au, ITO, and ATO-based current spreading layers for near-ultraviolet
light-emitting diodes
Wing Cheung Chong and Kei May Lau 2646-2649
Investigation of surface morphology ofn-type GaN after photoelectrochemical reaction in various
solutions for H2 gas generationKatsushi Fujii, Takashi Ito, Masato Ono, Yasuhiro Iwaki, Takafumi Yao,
and Kazuhiro Ohkawa 2650-2653
2200Contents
Transport properties and electron devices
A monolithic Cockcroft-Walton voltage multiplier based on AlGaN/GaN HFET structure
Jin-Ping Ao, Yoshikazu Matsuda, Yuya Yamaoka, and Yasuo Ohno 2654-2657
Buffer breakdown voltage of AlGaN/GaN HFET on a 4 inch Si(l 11) substrate grown by MOCVDMasayuki Iwami, Sadahiro Kato, Yoshihiro Satoh, Hitoshi Sasaki, and Seikoh Yoshida
..
. .2658-2661
Low on-resistance of GaNp-/-« vertical conducting diodes grown on 4H-SiC substrates
Atsushi Nishikawa, Kazuhide Kumakura, and Toshiki Makimoto 2662-2665
Analysis of buffer-related lag phenomena and current collapse in GaN FETs
K, Itagaki, N. Kobayashi, and K. Horio 2666-2669
Realization ofAlGaN/GaN HEMTs on Si-on-polySiC substratesYvon Cordier, Sebastien Chenot, Marguerite Latlgt, Olivier Tottereau, Sylvain Joblot,Fabrice Semond, Jean Massies, Lea Di Cioccio, and Hubert Moriceau 2670-2673
Normally-off operation in AlGaN/GaN/AlGaN double helerojunction field effect transistors
Mitsuaki Shimizu, Masaki Inada, Shuichi Yagi, Guanxi Piao, Hajime Okumura,Kazuo Arai, Yoshiki Yano, and Nakao Akutsu 2674-2677
An analysis of the increase in sheet resistance with the lapse oftime ofAlo,3Gao.7N/GaN HEMTstructure wafers
Junjiroh Kikawa, Tomoyuki Yamada, Tadayoshi Tsuchiya, Shinichi Kamiya,Kenichi Kosaka, Akihiro Hinoki, Tsutomu Araki, Akira Suzuki, and Yasushi Nanishi 2678-2681
Off-state drain current and breakdown voltage of AlGaN/GaN MIS-HEMT with multilayered gateinsulator
S. Yagi, M. Shimizu, M. Inada, H. Okumura, H. Ohashi, Y. Yano, and N. Akutsu 2682-2685
Suppression of gate leakage current in i-AlGaN/GaN heterostructures by insertion ofanodic A1203layer and influence ofthermal annealing on channel electrons
T. Sawada, K. Takahashi, K. Ise, K. Suzuki, K. Kitamori, N. Kimura, K. Imai, S.-W. Kim,
and T.Suzuki 2686-2689
Gate leakage currents ofAlGaN/GaN HEMT structures grown by metalorganic vapour phase epitaxyT. Yamada, T. Tsuchiya, K. Imada, M. Iwami, J. Kikawa, T. Araki, A. Suzuki,andY. Nanishi 2690-2694
Monte Carlo study of high-field electron transport characteristics in AlGaN/GaN heterostracture
considering dislocation scatteringYoshihiro Tomita, Hirofumi Ikegami, and Hiroki I. Fujishiro 2695-2699
AlGaN/GaN MIS-HEMTs with Hf02 gate insulator
A. Kawano, S. Kishimoto, Y. Ohno, K. Maezawa, Takashi Mizutani, H. Ueno, T. Ueda,and T. Tanaka 2700-2703
Si+ implanted AlGaN/GaN HEMTs with reduced on-resistance
Kazuki Nomoto, Tomoyoshi Mishima, Masataka Satoh, and Tohru Nakamura 2704-2707
Fabrication of enhancement-mode ALOai .^N/GaN junction heterostructure field-effect
transistors with p-type GaN gate contact
T. Fujii, N. Tsuyukuchi, Y. Hirose, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki.. . . 2708-2711
Analysis ofelectrical properties of insulators (Si3N4, Si02, AlN, and Al2O3)/0.5 nm SijN^AlGaN/GaNheterostructures
Narihiko Maeda, Masanobu Hiroki, Noriyuki Watanabe, Yasuhiro Oda, Haruki Yokoyama,TakumaYagi, Toshiki Makimoto, Takatomo Enoki, and Takashi Kobayashi 2712-2715
Carrier transport studies ofdichromatic InGaN-based LEDs with spacer bandgap dependenceShih-Wei Feng, C. C.Pan, Jen-Inn Cliyi, Chien-Nan Kuo, and Kuei-Hsien Chen 2716-2719
Contents 2201
Characterization of AlGaN/GaN MOSHFETs with A1203 as gate oxide
D. Gregusova, R. Stoklas, K. Cico, G. Heidelberger, M. Marso, J. Novak,
andP.Kordos 2720-2723
Origin and elimination method of parasitic gate leakage current for AlGaN/GaN heterostructure
field effect transistor
Tamara Baksht, Yaron Knafo, Joseph Kaplun, and Gregory Bunin 2724-2727
Correlation between the leakage current and the thickness ofGaN-layer ofAlGaN/GaN-HFET
Akihiro Hinoki, Shinichi Kamiya, Tadayoshi Tsuchiya, Tomoyuki Yamada,
Junjiroh Kikawa, Tsutomu Araki, Akira Suzuki, and Yasushi Nanishi 2728-2731
Quasi-normally-offAlGaN/GaN HEMTs fabricated by fluoride-based plasma treatment
Hiroaki Mizuno, Shigeru Kishimoto, Koichi Maezawa, and Takashi Mizutani 2732-2735
Novel field plate structure ofAlGaN/GaN HEMTs
AkiraNakajima, Mitsuaki Shimizu, and Hajime Okumura 2736-2739
Series resistance in a GaN/AlGaN/n-Si structure grown by MOVPE
Yoshio Honda, Satoshi Kato, Masahito Yamaguchi, and Nobuhiko Sawaki 2740-2743
Temperature distribution analysis of AlGaN/GaN HFETs operated around breakdown voltage
using micro-Raman spectroscopy and device simulation
Kenichi Kosaka, Tatsuya Fujishima, Kaoru Inoue, Akihiro Hinoki, Tomoaki Yamada,
Tadayoshi Tsuchiya, Junjiroh Kikawa, Shinichi Kamiya, Akira Suzuki, Tsutomu Araki,
and Yasushi Nanishi 2744-2747
Evaluation ofAlGaN/GaN-HFET with HfAlO gate insulator
H. Sazawa, K. Hirata, M. Kosaki, N. Shibata, K. Furuta, S. Yagi, Y. Tanaka, A. Kinoshita,
M. Shimizu, and H. Okumura 2748-2751
Optical properties and devices
Time-resolved four-wave mixing studies of excitons in GaN
K. Yamaguchi, Y. Toda,T. Ishiguro, S. AdachlK.Hoshino, and K.Tadatomo 2752-2755
Mega-cone blue LEDs based on ZnO/GaN direct waferbondingA. Murai, D. B. Thompson, H. Masui, N. Fellows, U. K. Mishra, S. Nakamura,
and S. P. DenBaars 2756-2759
Photoluminescence study ofisoelectronic traps in dilute GaAsN alloys
H. Yaguchi, T. Aoki, T. Morioke, Y. Hijikata, S. Yoshida, M. Yoshita, H. Akiyama,
D.Aoki.andK. Onabe 2760-2763
GaN/air gap based micro-opto-electro-mechanical (MOEM) Fabry-Perot filters
E. Cho, D. Pavlidis, and E. Sillero 2764-2767
Significance ofvertical carrier capture for electroluminescence efficiency in InGaN
multiple-quantum well diodes
T. Inada, A. Satake, and K. Fujiwara 2768-2771
Experimental and theoretical study of substrate modes in (AlJn)GaN laser diodes
H. Braun, C. Lauterbach, U. T. Schwarz, V. Laino, B. Witzigmann, C. Rmnbolz,
M. O. Schillgalies, A. Lell,V. Harle, andU. Straufi 2772-2775
Coherent manipulation of A and B excitons in GaN
T. Ishiguro, Y. Toda, S. Adachi, K. Hazu, T. Sota, and S.F.Chichibu 2776-2779
2202 Contents
Radiative and non-radiative transitions in blue quantum wells embedded in AlInGaN-based laser
diodes
J. K. Son, S. N. Lee, H. S. Paek, T. Sakong, K. H. Ha, O. H. Nam, and Y. Park 2780-2783
Temperature dependence ofthe quantum efficiency in green light emitting diode dies
Y. Li, W. Zhao, Y. Xia, M. Zhu, J. Senawiratne, T. Detchprohm, E. F. Schubert,
and C.Wetzel 2784-2787
Inhomogeneity ofInGaN quantum wells in GaN-based blue laser diodes
Sung-Nam Lee, H. Y. Ryu, H. S. Paek, J. K. Son, T. Sakong, T. Jang, Y. J. Sung, K. S. Kim,K. H. Ha, O.H. Nam, andY. Park 2788-2792
Investigation oflocal tunneling phenomena in green InGaN-based LEDs
Grigory Onushkin, Jinhyun Lee, Jung-Ja Yang, Seong-Eun Park, Min-Ho Kim,
and Masayoshi Koike 2793-2796
Improvements ofquantum efficiency and thermal stability by using Si delta doping in blue
InGaN/GaN multiple quantum well light-emitting diodes
Gwo-Mei Wu, Ta-Jen Chung, Tzer-En Nee, Da-Chuan Kuo, Wei-Jen Chen, Chih-Chun Ke,Cheng-Wei Hung, Jen-Cheng Wang, andNei-Chuan Chen 2797-2801
Temperature measurement of GaN-based blue-violet laser diodes in operation by Raman microprobeKenji Takahashi, Daisuke Matsuoka, Hiroshi Harima, Kenji Kisoda, Yuhzoh Tsuda,
Takayuki Yuasa, and Mototaka Taneya 2802-2805
Extraction-efficiency enhancement ofInGaN-based vertical LEDs on hemispherically patternedsapphire
Jae-Hoon Lee, Jeong-Tak Oh, Seok-Boem Choi, Jong-Gun Woo, Su-Yeol Lee,and Myoung-Bok Lee 2806-2809
Blue light emitting diode fabricated on a-plane GaN film over r-sapphire substrate and on a-planebulk GaN substrate
Y. Naoi, K. Ikeda, T. Hama, K. Ono, R. Choi, T. Fukumoto, K. Nishino, S. Sakai, S. M. Lee,andM. Koike 2810-2813
Electroluminescence uniformity in green LEDs and dual color blue/green stacking LEDs
Grigory Onushkin, Jinhyun Lee, Jung-Ja Yang, Seong-Suk Lee, In-Chul Lee, Min-Ho Kim,and Masayoshi Koike 2814-2817
Micro-analysis of light emission properties of GaN-based laser diodes
M. Godlewski, R. Bozek, S. Miasojedovas, S. Jursenas, K. Kazlauskas, A. Zukauskas,M. R. Phillips, R. Czernecki, G. Targowski, P. Perlin, M. Leszczynski, T. Bottcher, S. Figge,andD. Hommel 2818-2821
Near-UV to violet LEDs - Wavelength dependence ofefficiency limiting processesM. Kunzer, U. Kaufmann, K. KShler, C. C. Leancu, S. Liu, and J. Wagner 2822-2825
Mechanisms of metalorganic vaporphase epitaxy of InGaN quantum wells on GaN microfacet
structures
M. Ueda, K. Hayashi, T. Kondou, M. Funato, Y. Kawakami, Y. Narukawa, and T. Mukai. . .
2826-2829
Multi-color light emitting diode using polarization-induced tunnel junctionsMichael J. Grundmann and Umesh K. Mishra 2830-2833
Effects ofjunction temperature and its variations on the performance ofGaN-based high power
flip-chip LEDs
L. Lin, Z. Z. Chen, H. P. Pan, S. L. Qi, P. Liu, Z. X. Qin, T. J. Yu, B. Zhang, Y. Z. Tong,and G.Y.Zhang 2834-
Contents 2203
Time-resolved photoluminescence spectroscopy in a GaN/AlGaN SQW stmcture grown on a (11 l)Sisubstrate
Eunhee Kim, Tetsuo Narita, Yoshio Honda, Masahito Yamaguchi, and Nobuhiko Sawaki. . .
2838-2841
Wave guide optimization for homoepitaxial laser diodes
S. Figge, J. Dennemarck, T. Aschenbrenner, A. Zargham, and D. Hommel 2842-2845
Detectors
Aluminum nitride/indium nitride bilayer and multilayer thin film systems as coatings for solar cells
and longwave-pass filters
Jebreel M. Khoshman and Martin E. Kordesch 2846-2849
Wide spectral responses In/ja^N deep UV photomultiplier tube
Shoichi Uchiyama, Yasufumi Takagi, Haruyasu Kondoh, Hiroyuki Takatsuka, Hideaki Suzuki,
Yasuo Ohishi, Nobuharu Suzuki, Kazuyoshi Okano, Minora Niigaki, and Hirofumi Kan. . . . 2850-2853
1.2-eV GaAsN/InGaAs strain-compensated superlattice structures for high efficiency solar cells
Pei-Hsuan Wu, Yan-Kuin Su, I-Liang Chen, Chih-Hung Chiou, Jung-Tsung Hsu,
and Wen-Ray Chen 2854-2858
Further papers of Workshop IWN 2006 are published in physica status solidi (a) 204, No. 6 (2007)
and physica status solidi (b) 244, No. 6 (2007).
physica status solidi (c) is indexed in Cambridge Scientific Abstracts; CSA Technology Research Database
(CSA/CIG); Chemical Abstracts Service/SciFinder (ACS); COMPENDEX (Elsevier); FI2 Karlsruhe Databases (FI2
Karlsruhe); Google Scholar; INSPEC; Physics Abstracts (IET); ISI Index to Scientific & Technical Proceedings; PASCAL
Database (INIST/CNRS); SCOPUS (Elsevier); VINITI (All-Russian Institute of Science & Technological Information).
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