interposer technology: past, now, and future technology: past, now, and future shang y. hou...

18
Interposer Technology: Past, Now, and Future Shang Y. Hou 侯上勇 TSMC

Upload: lykhanh

Post on 09-May-2018

253 views

Category:

Documents


2 download

TRANSCRIPT

Page 1: Interposer Technology: Past, Now, and Future Technology: Past, Now, and Future Shang Y. Hou 侯上勇 TSMC 2 Sep. 2016 3D TSV: Have We Waited Long Enough? •Garrou (2014): “A Little

Interposer Technology:

Past, Now, and Future

Shang Y. Hou 侯上勇 TSMC

Page 2: Interposer Technology: Past, Now, and Future Technology: Past, Now, and Future Shang Y. Hou 侯上勇 TSMC 2 Sep. 2016 3D TSV: Have We Waited Long Enough? •Garrou (2014): “A Little

2 Sep. 2016

3D TSV: Have We Waited Long Enough?

• Garrou (2014): “A Little More

Patience Required for 2.5/3D”

– All things come to those who wait

• In 2016, interposer-TSV has grown into a

steady 3DIC business

– 4 years after the 1st CoWoS product

– Huge efforts spent in perfecting the

technology, plus HBM as a key add-on

Phil Garrou, IFTLE 212

Page 3: Interposer Technology: Past, Now, and Future Technology: Past, Now, and Future Shang Y. Hou 侯上勇 TSMC 2 Sep. 2016 3D TSV: Have We Waited Long Enough? •Garrou (2014): “A Little

3 Sep. 2016

Why Interposer But Not Yet 3D IC?

• Interposer SIP:

– Node independent: TSV in a mature, interconnect-only chip

– High yield: Enjoy fab-class, low D0 wafer process

– Thermal friendly: Directly leverage existing thermal solutions

• Logic-based 3DIC:

– Node dependent: TSV insertion in advanced Si node

– Yield concern: Ability for KGD before stacking

– Thermal: High power density requires innovative thermal solutions

Mobile, High-end Memory Die partition, Memory-Logic integration

Interposer (TSV in passive Si) 3D-IC (TSV in active Si)

Chip A Chip B Chip A

Chip B Interposer TSV

Page 4: Interposer Technology: Past, Now, and Future Technology: Past, Now, and Future Shang Y. Hou 侯上勇 TSMC 2 Sep. 2016 3D TSV: Have We Waited Long Enough? •Garrou (2014): “A Little

4 Sep. 2016

Homogeneous CoWoS® SIP

• Chip Partition

– Break one large die into to smaller dies of same functions

– Significant yield benefit to justify the integration cost

Yield = Exp(-D0*A)

0 200 400 600 800

Chip size, mm2

D0 = D in-2

D0 = D/2 in-2

Ch

ip Y

ield

, A

rb.

Un

it

Page 5: Interposer Technology: Past, Now, and Future Technology: Past, Now, and Future Shang Y. Hou 侯上勇 TSMC 2 Sep. 2016 3D TSV: Have We Waited Long Enough? •Garrou (2014): “A Little

5 Sep. 2016

Heterogeneous CoWoS® SIP

• Logic chips of different functions and nodes

– Cost saving from core chip partition and lower cost IO chip

• Logic-memory integration

– A long missed goal in both SoC and SIP

– Performance, power, and form factor

Me

mo

ry

Me

mo

ry

Me

mo

ry

Me

mo

ry Memory

Memory

Memory

Memory

SoC

SoC Memory

Memory

Memory

Memory

Substrate

CoWoS®

Technology

Page 6: Interposer Technology: Past, Now, and Future Technology: Past, Now, and Future Shang Y. Hou 侯上勇 TSMC 2 Sep. 2016 3D TSV: Have We Waited Long Enough? •Garrou (2014): “A Little

6 Sep. 2016

0

500

1000

1500

2000

2500

3000

0 500 1000 1500 2000 2500 3000

Package Size, mm2

IO B

all

Co

un

t

1 mm ball pitch

1 mm ball pitch

0.4 mm ball pitch

Interposer CoWoS® Application Space

• Clear differentiation between interposer-TSV and fan-out

technologies

CoWoS® High performance SoC partition

Stacked memory (HBM) compatible

Very high pin count (>3000)

Extremely high performance

Cloud servers, super computers

InFO Multi-chip integration

Small form-factor

Cost competitive

End-user devices

Page 7: Interposer Technology: Past, Now, and Future Technology: Past, Now, and Future Shang Y. Hou 侯上勇 TSMC 2 Sep. 2016 3D TSV: Have We Waited Long Enough? •Garrou (2014): “A Little

7 Sep. 2016

1st Generation CoWoS®

• Production starts with 28nm logic chips (2012)

• Homogeneous and heterogeneous interposer up to 800

mm2 (Full reticle size)

Homogeneous Integration Heterogeneous Integration

7V2000T 6.8B XTORS

7V580T

Courtesy of Xilinx

Page 8: Interposer Technology: Past, Now, and Future Technology: Past, Now, and Future Shang Y. Hou 侯上勇 TSMC 2 Sep. 2016 3D TSV: Have We Waited Long Enough? •Garrou (2014): “A Little

8 Sep. 2016

Fast Time-to-Market for New Si Nodes

• Demonstrated industry’s first 16nm network processor

on CoWoS® module (2014)

• Fast time-to-market is achieved by interposer SIP,

which eliminates node-dependent CPI seen in

conventional packages

16nm Core 1 16nm Core 2 28nm IO

Courtesy of Hisilicon

Package View CoW Wafer View

Page 9: Interposer Technology: Past, Now, and Future Technology: Past, Now, and Future Shang Y. Hou 侯上勇 TSMC 2 Sep. 2016 3D TSV: Have We Waited Long Enough? •Garrou (2014): “A Little

2nd Generation CoWoS® Development

Interposer 1200 mm2

(~1.5x reticle size)

3D memory integration

Better scalability

Reduced mismatch

Enhanced power

integrity

Page 10: Interposer Technology: Past, Now, and Future Technology: Past, Now, and Future Shang Y. Hou 侯上勇 TSMC 2 Sep. 2016 3D TSV: Have We Waited Long Enough? •Garrou (2014): “A Little

10 Sep. 2016

2nd Generation CoWoS® : CoWoS-XL1

• Industry’s first 20nm FPGA product on CoWoS (2015)

• Extra large interposer ~1200 mm2

• Composed by two-masks stitching of sub-micron RDL

• Package with record-large chip size

• Passed stringent component

reliability tests

Courtesy of Xilinx

XCVU440 20B X’stors

Page 11: Interposer Technology: Past, Now, and Future Technology: Past, Now, and Future Shang Y. Hou 侯上勇 TSMC 2 Sep. 2016 3D TSV: Have We Waited Long Enough? •Garrou (2014): “A Little

11 Sep. 2016

HBM1 Gen1 vs. Gen2

HBM1 HBM2

JEDEC standard JESD235 JESD235A

Stack size (mm x mm) ~5.5 x 7.3 ~8.0 x 12

Total z height (um) 480 720

Number of uBump 4942 4942

Bandwidth per stack 128 GB/s 200 - 256 GB/s

4-Hi Capacity 1 GB 4 GB

8-Hi Capacity N/A 8 GB

Availability 2015 2016

4Hi HBM

uBump interface

to Si interposer

• HBM2 has far better density and bandwidth than HBM2

Sources: SK hynix & Samsung

Page 12: Interposer Technology: Past, Now, and Future Technology: Past, Now, and Future Shang Y. Hou 侯上勇 TSMC 2 Sep. 2016 3D TSV: Have We Waited Long Enough? •Garrou (2014): “A Little

12 Sep. 2016

2nd Generation CoWoS® : CoWoS-XL2

• 1st interposer-HBM2 product (2016)

– 16nm SoC chip + 4 HBM2 (16 GB)

– 1200 mm2 interposer size

– 300 W power consumption

– 150B transistors total, 15.3B on SoC

– Core of deep learning supercomputer

720 GB/s 16GB HBM2 (x4)

288 GB/s 12GB GDDR5 (x12)

~20 pJ/b

Higher Memory Bandwidth

Lower Power per bit transferred

<10 pJ/b

GDDR5 HBM2

Courtesy of NVIDIA

HBM

HBM HBM

HBM

GP100 150B XTORS

Page 13: Interposer Technology: Past, Now, and Future Technology: Past, Now, and Future Shang Y. Hou 侯上勇 TSMC 2 Sep. 2016 3D TSV: Have We Waited Long Enough? •Garrou (2014): “A Little

13 Sep. 2016

Source: AMD

HBM

HBM HBM

HBM

1st Interposer SIP with HBM

• The 1st Product with HBM (2015)

– 28nm GPU + 4 HBM1 (4 GB)

– Large interposer size 1010 mm2

– 1st non-CoWoS interposer product

– Different suppliers for interposer and integration (UMC/ASE)

– Memory bandwidth: 512 GB/s

AMD Fiji

Page 14: Interposer Technology: Past, Now, and Future Technology: Past, Now, and Future Shang Y. Hou 侯上勇 TSMC 2 Sep. 2016 3D TSV: Have We Waited Long Enough? •Garrou (2014): “A Little

14 Sep. 2016

2nd Generation CoWoS® : Milestones Achieved

• Record-large chip size: 1200 mm2 (Si interposer)

• Integrate 3D memory stacks with logic by CoWoS®

• 150B transistors in a package

• Manufacturing infrastructure of 3rd-party dies on CoWoS®

• A number of performance breakthroughs

Page 15: Interposer Technology: Past, Now, and Future Technology: Past, Now, and Future Shang Y. Hou 侯上勇 TSMC 2 Sep. 2016 3D TSV: Have We Waited Long Enough? •Garrou (2014): “A Little

15 Sep. 2016

CoWoS® SIP: Cost vs. Value

• Volume is by far the No.1 factor in the cost equation

– Not yet find a niche in mobile applications

– Firm demand in the extremely high-end market (Cloud)

• Interposer is an “add-on” technology

– High intrinsic cost is unavoidable compared with flip chip

• The key is whether it has sufficient value to justify the

cost?

Page 16: Interposer Technology: Past, Now, and Future Technology: Past, Now, and Future Shang Y. Hou 侯上勇 TSMC 2 Sep. 2016 3D TSV: Have We Waited Long Enough? •Garrou (2014): “A Little

16 Sep. 2016

Key Merits of CoWoS® Integration

• Desnsity: Sub-micron RDL interconnects

– Dual damascene, plenty of room for scaling

– Small via, no routing penalty

– Fab-class, low defect density

• Capacity: Super large interposer

– 1200 mm2 in production

– Enables highest level of

multi-die integration

• Native to HBM integration

– JESD235A compatible. No customization needed.

• Eliminates ELK related CPI !!!

• Same thermal solution as flip chip

Interposer SIP

40 mm

30 mm

DD SAP

Source: tsmc

Page 17: Interposer Technology: Past, Now, and Future Technology: Past, Now, and Future Shang Y. Hou 侯上勇 TSMC 2 Sep. 2016 3D TSV: Have We Waited Long Enough? •Garrou (2014): “A Little

17 Sep. 2016

Summary

• CoWoS® is an excellent high-end SIP platform

– High yield, good reliability

– Market leader since 2012

– Fast time-to-market

– Very wide technology envelope

• CoWoS® is a big enabler for HBM

– Natively compatible with JESD235A

– Realize the goal of logic-memory integration

• Growing demand that will last for long

– Extremely high-end cloud and supercomputer systems

– Highly flexible for heterogeneous integration. E.g., core/IO,

memory, SerDes, Si photonics,….

Page 18: Interposer Technology: Past, Now, and Future Technology: Past, Now, and Future Shang Y. Hou 侯上勇 TSMC 2 Sep. 2016 3D TSV: Have We Waited Long Enough? •Garrou (2014): “A Little

Thank You

Expect Logic-based 3D IC to come out soon