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Simulation of new P-Type strip detectors 17th RD50 Workshop, CERN, Geneva Centro Nacional de Microelectrónica Instituto de Microelectrónica de Barcelona Simulation of new P-type strip detectors with trench to enhance the charge multiplication effect in the n- type electrodes G. Pellegrini , J. P. Balbuena, C. Fleta, P. Fernández- Martínez, D. Quirion, S. Hidalgo, D. Flores, M. Lozano Centro Nacional de Microelectrónica (IMB-CNM-CSIC) G. Casse, D. Forshaw Liverpool University Work partially supported by RD50 collaboration

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Simulation of new P-type strip detectors with trench to enhance the charge multiplication effect in the n-type electrodes. G. Pellegrini , J. P. Balbuena, C. Fleta, P. Fernández-Martínez, D. Quirion, S. Hidalgo, D. Flores, M. Lozano Centro Nacional de Microelectrónica (IMB-CNM-CSIC) - PowerPoint PPT Presentation

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Page 1: Introduction

Simulation of new P-Type strip detectors 17th RD50 Workshop, CERN, Geneva 1/15

Centro Nacional de Microelectrónica Instituto de Microelectrónica de Barcelona

Simulation of new P-type strip detectors with trench to enhance the charge multiplication effect in the n-

type electrodes

G. Pellegrini, J. P. Balbuena, C. Fleta, P. Fernández-Martínez, D. Quirion, S. Hidalgo, D. Flores, M. Lozano

Centro Nacional de Microelectrónica (IMB-CNM-CSIC)

G. Casse, D. ForshawLiverpool University

Work partially supported by RD50 collaboration

Page 2: Introduction

Simulation of new P-Type strip detectors 17th RD50 Workshop, CERN, Geneva 2/15

Centro Nacional de Microelectrónica Instituto de Microelectrónica de Barcelona

Introduction

Project: fabricate a p-type strip detector with small gain Similar signal before and after irradiation

• Multiplication occurs at low bias voltage• Gain should be limited between 2 and 10:

- Avoid Crosstalk- Avoid exceeding the dynamic range of readout

electronics• Capacitance should not increase significantly

- Higher capacitance Higher noise

Page 3: Introduction

Simulation of new P-Type strip detectors 17th RD50 Workshop, CERN, Geneva 3/15

Centro Nacional de Microelectrónica Instituto de Microelectrónica de Barcelona

Technological proposals I. Trench filled with doped polysilicon along the centre of the strip

pitch− A N+ contact is created into the silicon bulk that modifies the

electric field in the collection region multiplication

285µm

80µmn+

p-

p+

32µm

5µm

5µm

20µm

8µmp-stop

Poly trench

Page 4: Introduction

Simulation of new P-Type strip detectors 17th RD50 Workshop, CERN, Geneva 4/15

Centro Nacional de Microelectrónica Instituto de Microelectrónica de Barcelona

Technological proposals II. P-type diffusion along the centre of the strip pitch

− Under reverse bias conditions, a high electric field region is created at the N+– P junction multiplication

p-

p+

285µm

32µm

80µm

20µm

8µmn+

5µm p-stop

P-type diffusion

Page 5: Introduction

Simulation of new P-Type strip detectors 17th RD50 Workshop, CERN, Geneva 5/15

Centro Nacional de Microelectrónica Instituto de Microelectrónica de Barcelona

Simulation Model

Irradiation trap model: Acceptor; E= Ec + 0.46 eV; η=0.9; σe = 5 x 10-15; σh = 5 x 10-14

Acceptor; E= Ec + 0.42 eV; η=1.613; σe = 2 x 10-15; σh = 2 x 10-14

Acceptor; E= Ec + 0.10 eV; η=100; σe = 2 x 10-15; σh = 2.5 x 10-15

Donor; E= Ev - 0.36 eV; η=0.9; σe = 2.5 x 10-14; σh = 2.5 x 10-15

Impact Ionization Model: Universty of Bolonia

Sentaurus ISE-TCAD

Page 6: Introduction

Simulation of new P-Type strip detectors 17th RD50 Workshop, CERN, Geneva 6/15

Centro Nacional de Microelectrónica Instituto de Microelectrónica de Barcelona

Simulation of the Electric FieldStrip Detector Poly Trench

P diffusionHigh Electric Field

region driven deep in the bulk

High Electric Field peak at the centre of the strip

Page 7: Introduction

Simulation of new P-Type strip detectors 17th RD50 Workshop, CERN, Geneva 7/15

Centro Nacional de Microelectrónica Instituto de Microelectrónica de Barcelona

0 10 20 30 40 50104

105

Elec

tric

Fie

ld (V

/cm

)

Depth (m)

Strip Poly Trench P Diffusion

Section @ Strip Center

High Electric Field peak at the junction

Simulation of the Electric Field

High Electric Field region driven deep in

the bulk

0 10 20 30 40 50104

105

Elec

tric

Fie

ld (V

/cm

)

Depth (m)

Strip Poly Trench P Diffusion

Section @ Strip Center

Curves at 500 V No Irradiated

Irradiated. Φeq = 1 x 1016

Page 8: Introduction

Simulation of new P-Type strip detectors 17th RD50 Workshop, CERN, Geneva 8/15

Centro Nacional de Microelectrónica Instituto de Microelectrónica de Barcelona

Simulation of the Capacitance

p-

p+

n+

CBulk

CInterStrip

0 50 100 150

4

8

12

16

Bul

k C

apac

itanc

e (p

F)

Applied Voltage (V)

Strip Poly Trench P Diffusion

0 50 100 1500

20

40

60

80

100

CIn

ter_

Strip

(pF)

Applied Voltage (V)

Strip Poly Trench P Diffusion

Once Fully Depleted, the bulk capacitance is

the same for all the structures

Increment related with the depletion of the P

diffusion

We need experimental

results to extract any conclusion

Page 9: Introduction

Simulation of new P-Type strip detectors 17th RD50 Workshop, CERN, Geneva 9/15

Centro Nacional de Microelectrónica Instituto de Microelectrónica de Barcelona

Variation over the basic proposals I. P – type diffusion, implanted through a trench filled with oxide, along the

centre of the strip pitch− N+/ P-type diffusion junction creates a high electric field region

multiplication

n+

p-p+

285µm

32µm

80µm

5µm

5µm

20µm

8µmp-stop

Oxide trench

P-type diffusion

Page 10: Introduction

Simulation of new P-Type strip detectors 17th RD50 Workshop, CERN, Geneva 10/15

Centro Nacional de Microelectrónica Instituto de Microelectrónica de Barcelona

Variation over the basic proposals II. Large P-Type covering all the strip width

− N+/ P-type diffusion junction creates a high electric field region multiplication

p-

p+

285µm

32µm80µm

20µm

8µm

n+

30µmp-stop

P-type diffusion

Page 11: Introduction

Simulation of new P-Type strip detectors 17th RD50 Workshop, CERN, Geneva 11/15

Centro Nacional de Microelectrónica Instituto de Microelectrónica de Barcelona

Variation over the basic proposals

DRAWBACK: If N+ and P diffusions are performed with the same mask, a premature breakdown is expected due to the curvature of the junction

• N+ diffusion should overlap P diffusion One extra level of Mask Optimisation of the overlap size

• It should work after irradiation

p-

p+

n+

Premature Cylindrical Breakdown

Page 12: Introduction

Simulation of new P-Type strip detectors 17th RD50 Workshop, CERN, Geneva 12/15

Centro Nacional de Microelectrónica Instituto de Microelectrónica de Barcelona

Status of the Work: FabricationThe fabrication run includes:• Conventional Strip Detectors• Poly Trench structures with

different trench depths:− 5 µm− 10 µm− 50 µm

• Structures with small P layer along the center of the strip

• Devices with large P layer along the center of the strip

• Oxide filled trench structures with a P layer implanted through the trench:

− 5 µm− 10 µm− 50 µm

Fabrication: step 50 out of 80. Doping trenches.

Page 13: Introduction

Simulation of new P-Type strip detectors 17th RD50 Workshop, CERN, Geneva 13/15

Centro Nacional de Microelectrónica Instituto de Microelectrónica de Barcelona

Status of the Work: PAD DiodesWe have fabricated PAD diodes with a P layer diffused under the N+ diffusion

− N+/ P-type diffusion junction creates a high electric field region multiplication

385 m

N+

P

High Electric Field region leading to

multiplication

5000 µm

5000 µm

First Measurements: Gain ~2

Page 14: Introduction

Simulation of new P-Type strip detectors 17th RD50 Workshop, CERN, Geneva 14/15

Centro Nacional de Microelectrónica Instituto de Microelectrónica de Barcelona

Conclusions and Applications1. We have shown several new designs to enhance

the multiplication process.2. If detector will work many tests must be done:

uniformity, stability, reproducibility etc.....3. A PAD detector with small gain has been fabricated

following some of the procedures described in this work.4. A run containing the discussed designs is being

fabricated for subsequent characterisation.5. Test uniformity with test beam or laser with Alibava

Applications:- Radiation Hard Detectors- Tracking Detectors- Charge multiplication permits the fabrication of thinner detectors


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