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![Page 1: Introduction - GitHub Pages · 2020. 8. 24. · Introduction Principles of Micro-and Nanofabrication for Electronic and Photonic Devices. Xing Sheng, EE@Tsinghua Optical and Electronic](https://reader036.vdocument.in/reader036/viewer/2022071108/5fe32e036f8fec589411373f/html5/thumbnails/1.jpg)
Xing Sheng, EE@Tsinghua
1
Xing Sheng盛兴
Department of Electronic EngineeringTsinghua University
Introduction
Principles of Micro- and Nanofabrication for Electronic and Photonic Devices
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Xing Sheng, EE@Tsinghua
Optical and Electronic Devices
2
LEDs lasers waveguides fibers
photonic crystalsmetamaterialssolar cellsdetectors
integrated circuits
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Xing Sheng, EE@Tsinghua
Goal of This Course
4
Focus on the fabrication and processing methods to form electronic and optical devices at micro- and nano-scale
Cover fundamental concepts to grow, pattern, deposit, etch and integrate various materials (silicon, III-V, etc) to form electronic and optical devices
Emerging fabrication technologies such as nanofabrication and self-assembly will also be included
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Xing Sheng, EE@Tsinghua
Nobel Prize in Physics
22
1956 Semiconductor transistors
1991 Liquid crystals
2000 Integrated circuits
2000 Semiconductor heterostructures
2009 CCD imaging sensors
2009 Optical fibers
2010 Graphene
2014 GaN based blue LEDs
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Xing Sheng, EE@Tsinghua
'Disruptive' Technologies
23
1956 Semiconductor transistors
1991 Liquid crystals
2000 Integrated circuits
2000 Semiconductor heterostructures
2009 CCD imaging sensors
2009 Optical fibers
2010 Graphene
2014 GaN based blue LEDs
vacuum tubes
CRT displays
film cameras
copper cables
incandescent light bulbs
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Xing Sheng, EE@Tsinghua
Semiconductor Market
24
current ~ 500 billion $$$
GDP of Thailand: 400 billion $$$
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Xing Sheng, EE@Tsinghua
Devices in a Smartphone
25
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Xing Sheng, EE@Tsinghua
Some 'Ancient' Computers
26
abacus slide rule
First 'electronic' computer ENIAC, 1943
30 tons, 200 kW
18000 vacuum tubes
5000 times/sec
cost $480,000 vacuum tube
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Xing Sheng, EE@Tsinghua
Vacuum Tube
27
current flows only in one direction: diode
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Xing Sheng, EE@Tsinghua
First Semiconductor Transistor
28
GermaniumBipolar Transistor
1956 Nobel Prize in Physics
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Xing Sheng, EE@Tsinghua
First Integrate Circuits
29
Germanium
2000 Nobel Prize in Physics
J. Kilby1923–2005
Q: Why Ge?
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Xing Sheng, EE@Tsinghua
First Integrate Circuits
30All devices can be made in the same semiconductor!
diode capacitor transistor resistor
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Xing Sheng, EE@Tsinghua
First Integrate Circuits
31
"There is plenty of room at the bottom", APS Meeting, 1959
R. Feynman
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Xing Sheng, EE@Tsinghua
First Integrate Circuits
32
Silicon
R. Noyce1927–19904 transistors
~ 2 mm
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Xing Sheng, EE@Tsinghua
First Integrate Circuits
33
Thermal oxidation (SiO2)
Photolithography
Etching
Thermal diffusion (n-Si, p-Si)
Metal deposition (Al)
~ 2 mmVery similar to today's process
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Xing Sheng, EE@Tsinghua
CMOS
34
Complementary Metal-Oxide-Semiconductor F. Wanlass, Fairchild, 1963
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Xing Sheng, EE@Tsinghua
CMOS Process
35Video
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Xing Sheng, EE@Tsinghua
CMOS Logic
36
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Xing Sheng, EE@Tsinghua
CMOS Circuit
37
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Xing Sheng, EE@Tsinghua
Integrate Circuits
38
Moore's law, Fairchild, 1965
G. Moore
G. E. Moore, Electronics Mag. 38, (1965)
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Xing Sheng, EE@Tsinghua
Integrate Circuits
39
Moore's law, Fairchild, 1965
G. E. Moore, Electronics Mag. 38, (1965)
G. Moore
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Xing Sheng, EE@Tsinghua
Integrate Circuits
40
Moore's law, Fairchild, 1965
Intel i7 CPU, ~ 109 transistors
< 100 nm
virus
Modern Electronics is a real Nanotechnology
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Xing Sheng, EE@Tsinghua
120 Years of Moore's Law
41
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Xing Sheng, EE@Tsinghua
Integrate Circuits
421980s 2017, price > gold
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Xing Sheng, EE@Tsinghua
Transistor Evolution
43
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Xing Sheng, EE@Tsinghua
Materials in IC
44
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Xing Sheng, EE@Tsinghua
Modern IC foundry
45
Samsung
Global Foundries
Cost > 10 billion $$$
Video 2
Video 1
Intel
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Xing Sheng, EE@Tsinghua
All Good Things Come to an End
46
story about chess ...
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Xing Sheng, EE@Tsinghua
Power Consumptions
47
Shannon-von Neumann-Landauer (SNL) limit:minimum energy per bit ~ kBT*ln(2)
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Xing Sheng, EE@Tsinghua
IC Delays
48
RCt ~
more conductive electrodes, lower k dielectrics
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Xing Sheng, EE@Tsinghua
Doping in Nano Devices
49
atomic density of Si = 5 * 1022 /cm3
if the transistor size is 10 nm * 10 nm * 10 nm,and doping concentration is1 * 1018 /cm3
There is only 1 dopant atom in the transistor!
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Xing Sheng, EE@Tsinghua
Grain Sizes in Nano Transistors
50
grain size ~ a few nm
grain boundary, roughness, increased electron scattering, ...
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Xing Sheng, EE@Tsinghua
Carrier Transport
51
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Xing Sheng, EE@Tsinghua
Carrier Transport
52
large C requires small t
t
AC
VVC
L
WI thG
SatD
0
2
,2
)(
quantum tunneling
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Xing Sheng, EE@Tsinghua
Danger from Outer Space
53
smaller devices are more susceptible to cosmic rays
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Xing Sheng, EE@Tsinghua
All Good Things Come to an End
54
M. M. Waldrop, Nature 530, 144 (2016)
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Xing Sheng, EE@Tsinghua
New Opportunities
55
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Xing Sheng, EE@Tsinghua
New Opportunities
56
high k dielectric, copper, FinFET, strained Si, ...
photonics, MEMS, flexible, power, ...
nanowires, 2D, photonic circuits, ...
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Xing Sheng, EE@Tsinghua
High Electron Mobility Transistor (HEMT)
57
electron mobility
hole mobility
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Xing Sheng, EE@Tsinghua
Nano-Transistors
58S. Desai, et al., Science 354, 99 (2016)
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Xing Sheng, EE@Tsinghua
Photonic Integrated Circuits
59C. Sun, et al., Nature 528, 534 (2015)
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Xing Sheng, EE@Tsinghua
3D IC
60
Logic + Memory + Sensing + ...
conventional 3D IC
M. M. Shulaker, et al., Nature 547, 74 (2017)
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Xing Sheng, EE@Tsinghua
More than Moore
61
Microelectronics
Microelectromechanical Systems (MEMS)
Micro and Nano Photonics
Optoelectronics
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Xing Sheng, EE@Tsinghua
Image Sensors
62films CMOS sensors
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Xing Sheng, EE@Tsinghua
Displays
63CRT Flat panel
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Xing Sheng, EE@Tsinghua
Light Sources
64
Incandescent bulb
LEDsFluorescent lamp
S. Nakamura, et al., Appl. Phys. Lett. 64, 1687 (1994)
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Xing Sheng, EE@Tsinghua
Light Sources
65
ruby laser
semiconductor lasergas laser
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Xing Sheng, EE@Tsinghua
Integrated Photonic Circuits
66
Integrated photonicsConventional optics
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Xing Sheng, EE@Tsinghua
Integrated Photonic Circuits
67
Optical AntennaMicrowave Antenna