introduction , p ast w ork and f uture perspectives : a concise summary
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Introduction , P ast W ork and F uture Perspectives : A Concise Summary. CERN, 18.02.2013 Arno E. Kompatscher CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH Erfurt, Germany. Contents. Personal Introduction Diploma Thesis General outline Crystallography - PowerPoint PPT PresentationTRANSCRIPT
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Introduction, Past Work and Future Perspectives:
A Concise Summary
CERN, 18.02.2013
Arno E. KompatscherCiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH
Erfurt, Germany
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CERN,18.02.2013
Arno E.Kompatscher
Contents1. Personal Introduction
2. Diploma Thesis• General outline• Crystallography• Martensite• Preparation• Analysis and results
- TEM bright field- TEM selected area diffraction (SAD)- DSC
• ConclusionsSlide2/34
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CERN,18.02.2013
Arno E.Kompatscher
Contents3. Present Work and Future• 4’’ wafer layout• 6’’ wafer layout• Comparison
- Quad vs. FE-I4 vs. FE-I3- Ganged & long pixels (Quad, center)- With and without long pixels (edge)- Bias grid variations
• Prospects
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CERN,18.02.2013
Arno E.Kompatscher
PersonalIntroduction
• Arno E. Kompatscher• Born June 4, 1984 in Hall in Tirol• Hometown: Feldkirch, Vorarlberg• Studied physics at University of Vienna• Thesis: Electron microscopy of Ni-Mn-Ga alloys• Mag.rer.nat. (= M.Sc.) on August 28, 2012
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CERN,18.02.2013
Arno E.Kompatscher
Personal Introduction
Home & Education
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Arno E.Kompatscher
Personal Introduction
Current Work
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Since November 1, 2012:
• Early Stage Researcher- CiS Forschungsinstitut für
Mikrosensorik und Photovoltaik GmbH
- Erfurt, Thuringia
• Ph.D. via- Prof. Claus Gößling- Lehrstuhl Experimentelle Physik
IV- TU Dortmund, North Rhine-
Westphalia
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Arno E.Kompatscher
Diploma Thesis
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“Phase transformations in Ni-Mn-Ga shape memory alloys subjected to severe plastic
deformation”Supervisor:
Prof. Thomas Waitz
Group:Physics of Nanostructured Materials (PNM)
Faculty of Physics, University of Viennaphysnano.univie.ac.at
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CERN,18.02.2013
Arno E.Kompatscher
Diploma Thesis
General Outline• Material:
– Ni54Mn25Ga21– Tetragonal martensite (2M) in initial state
• Preparation:– High pressure torsion (HPT)– Annealing (heat treatment)
• Analysis– Transmission electron microscopy (TEM)– Differential scanning calorimetry (DSC)– X-ray diffractometry (XRD)
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Diploma Thesis
Crystallography
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Austenite(L21 Heusler)
Martensite(I4/mmm, bct)
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Diploma Thesis
Martensite
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• Martensitic phase transformation
• Displacive, diffusionless, 1st order
• Low temperature martensite
• High temperature austenite
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CERN,18.02.2013
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Diploma Thesis
Martensite
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Different variants of martensite
Unmodulated (2M, initial state), Modulated (7M and 5M)
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CERN,18.02.2013
Arno E.Kompatscher
Diploma Thesis
Preparation
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High pressure torsion (HPT):8 GPa, 50 and 100 turns
d = 0.4±0.1Degree of deformation :2.2 · 105 % and 6.5 · 105 %
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CERN,18.02.2013
Arno E.Kompatscher
Diploma Thesis
Analysis
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• Transmission electron microscopy (TEM)- Microstructure, grain size, lattice structure,
lattice parameters• Differential scanning calorimentry (DSC)
- Heat treatment, ID of phase transitions and respective enthalpies
• X-Ray diffractometry (XRD)- Confirmation of lattice structures and parameters
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CERN,18.02.2013
Arno E.Kompatscher
Diploma Thesis
Analysis
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1. Initial Material: w/o HPT, w/o heat treatment2. As deformed: after HPT, w/o heat treatment3. After HPT, heat treatment to 420°C4. After HPT, heat treatment to 500°C
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Arno E.Kompatscher
Diploma Thesis
TEM bright field
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Each martensitic variant is internally twinned; grain size
several hundreds of m
Strong grain fragmentation due to severe plastic deformation (SPD)
Initial state As deformed
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CERN,18.02.2013
Arno E.Kompatscher
Diploma Thesis
TEM bright field
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Beginnings of grain nucleation; small polygonized grains start to form due
to heat treatment (arrows)
Grain nucleation completed, clearly identifyable polygonized
grains; grain size 140±6 nm
HT 420°C HT 500°C
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CERN,18.02.2013
Arno E.Kompatscher
Diploma Thesis
TEM SAD
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Tetragonal martensite Disordered tetragonal (fct), face centered cubic (fcc), no
martensite
Initial state As deformed
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CERN,18.02.2013
Arno E.Kompatscher
Diploma Thesis
TEM SAD
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HT 420°C HT 500°C
Intermediade structure detected: disordered body centered cubic
(bcc)
7M martensite observed to be predominant
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CERN,18.02.2013
Arno E.Kompatscher
Diploma Thesis
DSC, initial state
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AP = 208 °C
MP = 190 °C
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CERN,18.02.2013
Arno E.Kompatscher
Diploma Thesis
DSC, progression
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• Change of martensite and austenite peak temperatures (AP, MP) due to heat treatment
• Sample 1: short annealing time (10 min at 500 °C, almost directly after HPT)
• Sample 7: long annealing time (505 min at temperatures from 500 to 675 °C)
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CERN,18.02.2013
Arno E.Kompatscher
Diploma Thesis
Conclusions
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• HPT induces strong grain refinement- Hundreds of m before HPT- 140±6 nm after HPT
• HPT causes disordering and suppression of martensitic transformation
• Upon heat treatment to 500 °C the adaptive 7M martensitic structure forms
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CERN,18.02.2013
Arno E.Kompatscher
Diploma Thesis
Acknowledgement
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• Prof. Thomas Waitz, supervisor• Dr. Clemens Mangler, assistant supervisor• Physics of Nanostructured Materials (PNM) Group• Faculty of Physics, University of Vienna• Materials Center Leoben (MCL)• Fonds zur Förderung der wissenschaftlichen
Forschung (FWF)
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Present Workand Future
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CERN,18.02.2013
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Present Work & Future
Motivation
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Past: development of new sensors for insertable B-layer (ATLAS Upgrade Phase I, happening now)
Development of new detectors forATLAS Upgrade Phase II (2022)
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Arno E.Kompatscher
Present Work & Future
4‘‘ Wafer
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• 2 x Quad• 3 x FE-I4
- Bias grid variants- Long pixels (old)- No long pixels (new)
• 8 x FE-I3- Several variants- Special: w/o bias
grid• Test structures
- Diodes- Temp. resistors- etc.
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Arno E.Kompatscher
Present Work & Future
6‘‘ Wafer
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• 4 x Quad• 12 x FE-I4
- Bias grid variants- Long pixels (old)- No long pixels (new)
• 16 x FE-I3- Several variants- Special: w/o bias
grid• Test structures
- Diodes- Temp. resistors- etc.
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CERN,18.02.2013
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Present Work & Future
Comparison
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Arno E.Kompatscher
Present Work & Future
Comparison
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Columns Rows No. of PixelsQuad 160 680 108.800FE-I4 80 336 26.880FE-I3 18 164 2.952
Benefit: Larger area of active pixels
Problem:Higher risk of fracture
+ –
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CERN,18.02.2013
Arno E.Kompatscher
Present Work & Future
Ganged & long pixels
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CERN,18.02.2013
Arno E.Kompatscher
Present Work & Future
Ganged & long pixels
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Arno E.Kompatscher
Present Work & Future
Comparison
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w/ and w/o long pixels
• Long pixels- Removed
• Guard rings- Readjusted- Now below standard
pixels
• Benefits:- Slimmer design- Precision to the very
edge
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Arno E.Kompatscher
Present Work & Future
Bias grid variations
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Problem:• High leakage currents at
HV
Possible Source:• Bias grid (dots)
Proposed Solution:• Varying bias grid layout• Var. 1: bias dots
unchanged, grid per column
• Var. 2: bias dots unchanged, grid at pixel center
• Var. 3: bias dots and grid at pixel center
Control: no bias grid
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CERN,18.02.2013
Arno E.Kompatscher
Present Work & Future
Prospects
• Processing of 6‘‘ Wafers (CiS)
• Characterization and Analysis (TU Dortmund)
• Test beam (DESY, Hamburg)
• Increasing radiation hardness
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CERN,18.02.2013
Arno E.Kompatscher
Thank Youfor your attention
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