investigation of pvd and cvd intermediate layers as a cobalt diff … · 2015. 7. 8. · plasma...

2
1|2 PLASMA SURFACE TECHNOLOGY · MATERIALS PHYSICS Investigation of PVD and CVD intermediate layers as a cobalt diffusion barrier for diamond deposition onto cemented carbide Increased demands on the cutting technique cause a conti- nuous development in the field of coating technology. At this, CVD processes (Chemical Vapor Deposition) allow diamond films deposited directly onto base bodies. Based on its excellent cutting properties, the most commonly used base material for CVD coatings are a composite material made of ceramic tungsten carbide (WC) with a metallic cobalt binder phase (Co), so-called cemented carbide (short: WC-Co). However, the cobalt (Co) contained in the substrate leads du- ring the diamond deposition to a graphitization of the carbon and thus to adhesion problems of the deposited layer. In order to achieve a high adhesive strength of the diamond coating on cemented carbide substrates, the wet-chemical treatment is currently the most widely used method. This leads to the co- balt removal from the edge zone of the substrate by etching of the base body. This method has serious disadvantages: > The process is very complex and costly > The peripheral zone of the base body is weakened, and tends to result in outbreaks > Standardization of the method is not possible due to diffe- rent compositions of the various cemented carbide grades > In cemented carbides with a Co content of >10 wt.%, suffi- cient adhesion of the diamond coating is not feasible to- day Therefore one approach to effectively improve the economy and efficiency of the diamond coatings on cemented carbide cutting tools is to replace the chemical etching process of the substrate during the pretreatment. One approach is the elimination of the interaction between cobalt and the growing diamond layer by means of a metallic or ceramic intermediate layer that has a low diffusion coeffi- cient for carbon and cobalt. The intermediate layer should assume the following functions: 1. Act as a diffusion barrier against Co-diffusion during the diamond deposition process 2. Reduce the difference between the thermal expansion coefficients of the diamond layer and the WC-Co substrate 3. Favor a high diamond nucleation density For the research project silicon-based (a-Si, SiNx) and tungs- ten-based (W, WC) interlayers were studied at the Fraunhofer IST, and two double layers of Al + nitride (Al + AlN, Al + CrN) were studied at fem. To optimize the Al + nitride coating systems, the following pa- rameters were varied: > Al-layer thickness > Nitrogen content in the nitride layers > Deposition temperature Figure 1 shows the SEM image of a FIB-section of cemented carbide base body coated with an Al + AlN intermediate layer and a microcrystalline diamond layer. The diamond layer was deposited by Fraunhofer IST by means of hot-filament CVD method. The EDX analysis could not detect any Coin the AIN- and in the diamond layer. This showed that the Al + AlN inter- mediate layer may be used as a diffusion barrier. The deposited Al/AlN layers on cemented carbide substrates have been subjected to a temperature treatment, which corre- sponded to the conditions during the diamond deposition. The diffusion processes were then examined in these layers by GDOES (glow discharge optical emission spectroscopy). In this connection a diffusion of Co to the surface of the cemen- ted carbide was observed. The concentration increases from about 10 at.% in the cemented carbide to about 25 at.% at the interface between cemented carbide and Al/AlN layer. Howe- ver, no diffusion of Co was observed in the AlN layer. It has been shown that the Co diffusion ends at the AlN layer. Figure 1 | SEM image of a FIB-section of a microcrystalline diamond co- ating on an Al/AlN layer Plasma Surface Technology · Materials Physics

Upload: others

Post on 03-Sep-2020

0 views

Category:

Documents


0 download

TRANSCRIPT

Page 1: Investigation of PVD and CVD intermediate layers as a cobalt diff … · 2015. 7. 8. · PLASMA SURFACE TECHNOLOGY · MATERIALS PHYSICS 1|2 Investigation of PVD and CVD intermediate

1|2PLASMA SURFACE TECHNOLOGY · MATERIALS PHYSICS

Investigation of PVD and CVD intermediate layers as a cobalt diff usion barrier for diamond deposition onto cemented carbide

Increased demands on the cutting technique cause a conti-

nuous development in the fi eld of coating technology. At this,

CVD processes (Chemical Vapor Deposition) allow diamond

fi lms deposited directly onto base bodies.

Based on its excellent cutting properties, the most commonly

used base material for CVD coatings are a composite material

made of ceramic tungsten carbide (WC) with a metallic cobalt

binder phase (Co), so-called cemented carbide (short: WC-Co).

However, the cobalt (Co) contained in the substrate leads du-

ring the diamond deposition to a graphitization of the carbon

and thus to adhesion problems of the deposited layer. In order

to achieve a high adhesive strength of the diamond coating on

cemented carbide substrates, the wet-chemical treatment is

currently the most widely used method. This leads to the co-

balt removal from the edge zone of the substrate by etching of

the base body. This method has serious disadvantages:

> The process is very complex and costly

> The peripheral zone of the base body is weakened, and

tends to result in outbreaks

> Standardization of the method is not possible due to diff e-

rent compositions of the various cemented carbide grades

> In cemented carbides with a Co content of >10 wt.%, suffi -

cient adhesion of the diamond coating is not feasible to-

day

Therefore one approach to eff ectively improve the economy

and effi ciency of the diamond coatings on cemented carbide

cutting tools is to replace the chemical etching process of the

substrate during the pretreatment.

One approach is the elimination of the interaction between

cobalt and the growing diamond layer by means of a metallic

or ceramic intermediate layer that has a low diff usion coeffi -

cient for carbon and cobalt.

The intermediate layer should assume the following functions:

1. Act as a diff usion barrier against Co-diff usion during the

diamond deposition process

2. Reduce the diff erence between the thermal expansion

coeffi cients of the diamond layer and the WC-Co substrate

3. Favor a high diamond nucleation density

For the research project silicon-based (a-Si, SiNx) and tungs-

ten-based (W, WC) interlayers were studied at the Fraunhofer

IST, and two double layers of Al + nitride (Al + AlN, Al + CrN)

were studied at fem.

To optimize the Al + nitride coating systems, the following pa-

rameters were varied:

> Al-layer thickness

> Nitrogen content in the nitride layers

> Deposition temperature

Figure 1 shows the SEM image of a FIB-section of cemented

carbide base body coated with an Al + AlN intermediate layer

and a microcrystalline diamond layer. The diamond layer was

deposited by Fraunhofer IST by means of hot-fi lament CVD

method. The EDX analysis could not detect any Coin the AIN-

and in the diamond layer. This showed that the Al + AlN inter-

mediate layer may be used as a diff usion barrier.

The deposited Al/AlN layers on cemented carbide substrates

have been subjected to a temperature treatment, which corre-

sponded to the conditions during the diamond deposition.

The diff usion processes were then examined in these layers

by GDOES (glow discharge optical emission spectroscopy). In

this connection a diff usion of Co to the surface of the cemen-

ted carbide was observed. The concentration increases from

about 10 at.% in the cemented carbide to about 25 at.% at the

interface between cemented carbide and Al/AlN layer. Howe-

ver, no diff usion of Co was observed in the AlN layer. It has

been shown that the Co diff usion ends at the AlN layer.Figure 1 | SEM image of a FIB-section of a microcrystalline diamond co-ating on an Al/AlN layer

Plasma Surface Technology · Materials Physics

Page 2: Investigation of PVD and CVD intermediate layers as a cobalt diff … · 2015. 7. 8. · PLASMA SURFACE TECHNOLOGY · MATERIALS PHYSICS 1|2 Investigation of PVD and CVD intermediate

2|2PLASMA SURFACE TECHNOLOGY · MATERIALS PHYSICS

The adhesion strength of the diamond coatings on Al/AlN lay-

er systems was investigated by means of sandblasting adhesi-

on testing. For this, the diamond films were irradiated with SiC

particles under a pressure of 2 bar and 5 bar, respectively. The

lifetime until failure of the diamond films was compared with

reference samples (diamond layers deposited directly onto

the etched cemented carbide substrates).

The best tool life in the sandblasting adhesion test provided

the Al/AlN layer system with an Al layer thickness of 20 nm

and a nitrogen flow of 10 sccm N2 for the AlN coating and a

deposition temperature of 700 °C. The lifetimes are above the

reference samples.

The lifetime of the diamond-coated Al/CrN coatings on WC-Co

in the sandblasting adhesion test were all below the times of

the reference samples. However, it was due to a change of the

coating system for the Al/CrN layer system for which the ad-

hesion couldn’t be sufficiently optimized.

In addition, the Al/AlN and Al/CrN interlayers were coated on

untreated cemented carbide ball nose end mills and then coa-

ted with a nanocrystalline diamond layer. Performed milling

tests on graphite plates showed no adequate adhesion. Hen-

ce, there is need for further optimization concerning the de-

position of the intermediate layer and the seeding pre-treat-

ment prior to diamond deposition.

AcknowledgementsThe IGF-project 17427N of the research association “Research

Institute for Precious Metals and Metals Chemistry e.V.” (fem)

was funded via the AiF in the frame of the program to promo-

te industrial research and development (IGF) of the Federal

Ministry of Economics and Energy based on a decision of the

German Parliament. This support is gratefully acknowledged.

The research institutes also like to thank the participants from

industry for helpful discussions and active participation in the

meetings of the project advisory committee, as well as the

support of goods and services.

Research partnersFraunhofer IST, Braunschweig

Industry partnersD-Coat GmbH, Erkelenz | Extramet AG, Plaffeien, CH | Limedion GmbH, Mannheim | Werkzeugschleiferei Schlenker GmbH,

Böbingen an der Rems | Zecha Hartmetall-Werkzeugfabrikation GmbH, Königsbach-Stein

Contactsfem | Forschungsinstitut Edelmetalle + Metallchemie | Katharinenstraße 17 | 73525 Schwäbisch Gmünd | Germany

Dr. Martin Fenker, [email protected] | Dipl.-Ing. (FH) Kerstin Petrikowski, [email protected]

PROJECT: IGF 17427 N

Figure 2 | GDOES analysis after the heat treatment of the Al/AlN layers with nitrogen flow of 20 sccm and a deposition temperature of 400°C.

Figure 3 | Lifetime in the sandblasting adhesion test of the Al/AlN layers coated with nanocrystalline diamond.