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IRF3710PbFHEXFET Power MOSFET

Parameter Typ. Max. UnitsR JC Junction-to-Case 0.75R CS Case-to-Sink, Flat, Greased Surface 0.50 C/WR JA Junction-to-Ambient 62

Thermal Resistance

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VDSS = 100V

RDS(on) = 23m

ID = 57AS

D

G

TO-220AB

Advanced HEXFET Power MOSFETs from International Rectifier utilizeadvanced processing techniques to achieve extremely low on-resistanceper silicon area. This benefit, combined with the fast switching speed andruggedized device design that HEXFET power MOSFETs are well knownfor, provides the designer with an extremely efficient and reliable device foruse in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrialapplications at power dissipation levels to approximately 50 watts. The lowthermal resistance and low package cost of the TO-220 contribute to its wideacceptance throughout the industry.

Advanced Process TechnologyUltra Low On-ResistanceDynamic dv/dt Rating175C Operating TemperatureFast SwitchingFully Avalanche RatedLead-Free

Description

Absolute Maximum Ratings

Parameter Max. UnitsID @ T C = 25C Continuous Drain Current, V GS @ 10V 57ID @ T C = 100C Continuous Drain Current, V GS @ 10V 40 AIDM Pulsed Drain Current 180P D @T C = 25C Power Dissipation 200 W

Linear Derating Factor 1.3 W/CVGS Gate-to-Source Voltage 20 VIAR Avalanche Current 28 AEAR Repetitive Avalanche Energy 20 mJdv/dt Peak Diode Recovery dv/dt 5.8 V/nsTJ Operating Junction and -55 to + 175TSTG Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )C

Mounting torque, 6-32 or M3 srew 10 lbfin (1.1Nm)

PD - 94954D

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S

D

G

Parameter Min. Typ. Max. Units ConditionsIS Continuous Source Current MOSFET symbol

(Body Diode)

showing theISM Pulsed Source Current integral reverse

(Body Diode)

p-n junction diode.VSD Diode Forward Voltage 1.2 V T J = 25C, I S = 28A, V GS = 0Vtrr Reverse Recovery Time 140 220 ns T J = 25C, I F = 28AQ rr Reverse Recovery Charge 670 1010 nC di/dt = 100A/s ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S+LD)

Source-Drain Ratings and Characteristics

57

230

Starting T J = 25C, L = 0.70mH RG = 25 , IAS = 28A, V GS =10V (See Figure 12)

Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11)

ISD 28A di/d 380A/s, V DD V(BR)DSS ,

TJ 175C Pulse width 400s; duty cycle 2%. This is a typical value at device destruction and represents

operation outside rated limits. This is a calculated value limited to T J = 175C .

Parameter Min. Typ. Max. Units ConditionsV(BR)DSS Drain-to-Source Breakdown Voltage 100 V V GS = 0V, I D = 250A V(BR)DSS / TJ Breakdown Voltage Temp. Coeff icient 0.13 V/C Reference to 25C, I D = 1mARDS(on) Static Drain-to-Source On-Resistance 23 m VGS = 10V, I D =28A

VGS(th) Gate Threshold Voltage 2.0 4.0 V V DS = VGS , ID = 250Ag fs Forward Transconductance 32 S V DS = 25V, I D = 28A

25A

VDS = 100V, V GS = 0V 250 V DS = 80V, V GS = 0V, T J = 150C

Gate-to-Source Forward Leakage 100 V GS = 20VGate-to-Source Reverse Leakage -100

nAVGS = -20V

Q g Total Gate Charge 130 I D = 28AQgs Gate-to-Source Charge 26 nC V DS = 80V

Qgd Gate-to-Drain ("Miller") Charge 43 V GS = 10V, See Fig. 6 and 13td(on) Turn-On Delay Time 12 V DD = 50Vtr Rise Time 58 I D = 28Atd(off) Turn-Off Delay Time 45 R G = 2.5

tf Fall Time 47 V GS = 10V, See Fig. 10Between lead,

6mm (0.25in.)from packageand center of die contact

C iss Input Capacitance 3130 V GS = 0VCoss Output Capacitance 410 V DS = 25VC rss Reverse Transfer Capacitance 72 pF = 1.0MHz, See Fig. 5EAS Single Pulse Avalanche Energy 1060 280 mJ I AS = 28A, L = 0.70mH

nH

Electrical Characteristics @ T J = 25C (unless otherwise specified)

LD Internal Drain Inductance

LS Internal Source Inductance S

D

G

IGSS

ns

4.5

7.5

IDSS Drain-to-Source Leakage Current

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Fig 4. Normalized On-ResistanceVs. Temperature

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

0.1 1 10 100

VDS , Drain-to-Source Voltage (V)

0.1

1

10

100

1000

I D ,

D r a

i n - t o - S o u r c e

C u r r e n

t ( A )

3.5V

20s PULSE WIDTHTj = 25C

VGSTOP 16V 10V 7.0V 6.0V 5.0V 4.5V 4.0VBOTTOM 3.5V

0.1 1 10 100


0.1

1

10

100

1000

I D ,

D r a


C u r r e n

t ( A )

3.5V

20s PULSE WIDTHTj = 175C

VGSTOP 16V 10V 7.0V 6.0V 5.0V 4.5V 4.0VBOTTOM 3.5V

3.0 4.0 5.0 6.0 7.0 8.0 9.0

VGS , Gate-to-Source Voltage (V)

0.10

1.00

10.00

100.00

1000.00

I D ,

D r a


C u r r e n

t (

)

TJ = 25C

TJ = 175C

VDS = 15V

20s PULSE WIDTH

-60 -40 -20 0 20 40 60 80 100 120 140 160 1800.0

0.5

1.0

1.5

2.0

2.5

3.0

T , Junction Temperature ( C)

R

, D r a


O n

R e s

i s t a n c e

( N o r m a

l i z e

d )

J

D S ( o n

)

V =

I =

GS

D

10V

57A

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Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage

Fig 7. Typical Source-Drain DiodeForward Voltage

1 10 100


10

100

1000

10000

100000

C ,

C a p a c

i t a n c e

( p F )

Coss

Crss

Ciss

VGS = 0V, f = 1 MHZCiss = Cgs + Cgd , Cds SHORTED

Crss = CgdCoss = Cds + Cgd

0 20 40 60 80 1000

2

5

7

10

12

Q , Total Gate Charge (nC)

V

, G a

t e - t o - S o u r c e

V o

l t a g e

( V )

G

G

S

I =D 28A

V = 20VDS

V = 50VDS

V = 80VDS

0.0 0.5 1.0 1.5 2.0

VSD , Source-toDrain Voltage (V)

0.10

1.00

10.00

100.00

1000.00

I S D ,

R e v e r s e

D r a

i n C u r r e n

t ( A )

TJ = 25C

TJ = 175C

VGS = 0V

1 10 100 1000

VDS , Drain-toSource Voltage (V)

0.1

1

10

100

1000

I D ,

D r a


C u r r e n

t ( A )

Tc = 25CTj = 175CSingle Pulse

1msec

10msec

OPERATION IN THIS AREALIMITED BY R DS (on)

100sec

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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.Case Temperature

VDS90%

10%VGS

td(on) tr td(off) tf

1 0.1 %

+

-

25 50 75 100 125 150 1750

10

20

30

40

50

60

T , Case Temperature ( C)

I ,

D r a

i n C u r r e n

t ( A )

C

D

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1

Notes:

1. Duty f acto r D = t / t

2. Peak T = P x Z + T

1 2

J DM thJC C

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

T h e r m a

l R e s p o n s e

( Z

)

1

t h J C

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE(THERMAL RESPONSE)

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QG

QGS QGD

VG

Charge

D.U.T. VDS

IDIG

3mA

VGS

.3F

50K

.2F12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

+

-

tp

V(BR)DSS

IAS

R G

IAS

0.01 t p

D.U.T

LVDS

+- VDD

DRIVER

A

15V

20VVGS

25 50 75 100 125 150 1750

110

220

330

440

550

Starting T , Junction Temperature ( C)

E

, S i n g l e

P u

l s e

A v a

l a n c

h e

E n e r g y

( m J )

J

A S

IDTOP

BOTTOM

11A20A28A

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P.W. Period

di/dt

Diode Recoverydv/dt

Ripple 5%

Body Diode Forward DropRe-AppliedVoltage

ReverseRecoveryCurrent

Body Diode ForwardCurrent

VGS =10V

VDD

ISD

Driver Gate Drive

D.U.T. I SD Waveform

D.U.T. V DS Waveform

Inductor Curent

D = P.W.Period

+

-

+

+

+-

-

-

For N-channel HEXFET power MOSFETs

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IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information .07/2010

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IRs Web site.

Notes:1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/

TO-220AB package is not recommended for Surface Mount Application

INTERNATIONAL PART NUMBE R

RECTIFIER

LOT CODE

ASSEMBLY

LOGO

YEAR 0 = 2000DATE CODE

WEEK 19LINE C

LOT CODE 1789

EXAMPLE: THIS IS AN IRF1010

Note: "P" in ass embly line positionindicates "Lead - Free"

IN THE ASS EMBLY LINE "C"ASS EMBL ED ON WW 19, 2000

irf3710pbf n

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