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File Number 2315.3

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207 | Copyright Intersil Corporation 1999

IRFD120

1.3A, 100V, 0.300 Ohm, N-ChannelPower MOSFET

This advanced power MOSFET is designed, tested, andguaranteed to withstand a specified level of energy in the

breakdown avalanche mode of operation. These are

N-Channel enhancement mode silicon gate power field

effect transistors designed for applications such as switching

regulators, switching convertors, motor drivers, relay drivers,

and drivers for high power bipolar switching transistors

requiring high speed and low gate drive power. They can be

operated directly from integrated circuits.

Formerly developmental type TA17401.

Features

1.3A, 100V

rDS(ON) = 0.300

Single Pulse Avalanche Energy Rated

SOA is Power Dissipation Limited

Nanosecond Switching Speeds

Linear Transfer Characteristics

High Input Impedance

Related Literature

- TB334 Guidelines for Soldering Surface Mount

Components to PC Boards

Symbol

Packaging

HEXDIP

Ordering Information

PART NUMBER PACKAGE BRAND

IRFD120 HEXDIP IRFD120

NOTE: When ordering, use the entire part number.

G

D

S

SOURCE

GATE

DRAIN

Data Sheet July 1999

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Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

IRFD120 UNITS

Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS 100 V

Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 100 V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 1.3 A

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 5.2 A

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V GS 20 V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 1.0 W

Linear Derating Factor (See Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.008 W/ oC

Single Pulse Avalanche Energy Rating (Note 3). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS 36 mJ

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG -55 to 150oC

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TLPackage Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

300

260

oCoC

CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. TJ = 25oC to 125oC.

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V (Figure 9) 100 - - V

Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250A 2.0 - 4.0 V

Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - 25 A

VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC - - 250 A

On-State Drain Current (Note 2) ID(ON) VDS > ID(ON) x rDS(ON) Max, VGS = 10V 1.3 - - A

Gate Source Leakage IGSS VGS = 20V - - 500 nA

Drain Source On Resistance (Note 2) rDS(ON) ID = 0.6A, VGS = 10V (Figures 7, 8) - 0.25 0.30

Forward Transconductance (Note 2) gfs VDS > ID(ON) x rDS(ON)MAX , ID = 0.6A (Figure 11) 0.9 1.0 - S

Turn-On Delay Time td(ON) VDD = 0.5 x Rated BVDSS, ID 1.3A,

VGS = 10V, RG = 9.1

RL

= 38.5 for VDD

= 50V

MOSFET Switching Times are Essentially

Independent of Operating Temperature

- 20 40 ns

Rise Time tr - 35 70 ns

Turn-Off Delay Time td(OFF) - 50 100 ns

Fall Time tf - 35 70 ns

Total Gate Charge

(Gate to Source + Gate to Drain)

Qg(TOT) VGS = 10V, ID = 1.3A, VDS = 0.8 x Rated BVDSS,

Ig(REF) = 1.5mA (Figure 13)

Gate Charge is Essentially Independent of Operating

Temperature

- 11 15 nC

Gate to Source Charge Qgs - 6.0 - nC

Gate to Drain Miller Charge Qgd - 5.0 - nC

Input Capacitance CISS VGS = 0V, VDS = 25V, f = 1MHz (Figure 10) - 450 - pF

Output Capacitance COSS - 200 - pF

Reverse Transfer Capacitance CRSS - 50 - pF

Internal Drain Inductance LD Measured From the Drain

Lead, 2mm (0.08in) from

Package to Center of Die

Modified MOSFET

Symbol Showing the

Internal Devices

Inductances

- 4.0 - nH

Internal Source Inductance LS Measured From theSource

Lead, 2mm (0.08in) from

Header to Source Bonding

Pad

- 6.0 - nH

Thermal Resistance Junctionto Ambient RJA Free Air Operation - - 120oC/W

LS

LD

G

D

S

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Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current ISD ModifiedMOSFET Symbol

Showing the Integral

Reverse P-N Junction

Diode

- - 1.3 A

Pulse Source to Drain Current ISDM - - 5.2 A

Source to Drain Diode Voltage (Note 2) VSD TJ = 25oC, ISD = 1.3A, VGS = 0V (Figure 12) - - 2.5 V

Reverse Recovery Time trr TJ = 150oC, ISD = 1.3A, dISD/dt = 100A/s - 280 - ns

Reverse Recovery Charge QRR TJ = 150oC, ISD = 1.3A, dISD/dt = 100A/s - 1.6 - C

NOTES:

2. Pulse test: pulse width 300s, duty cycle 2%.

3. VDD = 25V, starting TJ = 25oC, L = 32mH, RG = 25, peak IAS = 1.3A.

Typical Performance Curves Unless Otherwise Specified

FIGURE1. NORMALIZEDPOWER DISSIPATION vs AMBIENT

TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

AMBIENT TEMPERATURE

FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. OUTPUT CHARACTERISTICS

G

D

S

TA, AMBIENT TEMPERATURE (oC)

POWERDISSIPATIONMULTIPLIER

00 25 50 75 100 150

0.2

0.4

0.6

0.8

1.0

1.2

125

TA, AMBIENT TEMPERATURE (oC)

50 75 10025 150

1.5

1.2

0.9

0

0.6

ID,DRAINCURRENT(A)

0.3

125

VDS, DRAIN TO SOURCE VOLTAGE (V)

1

ID,DRAIN

CURRENT(A)

100

0.1

100.1

0.01

10

LIMITED BY rDS(ON)

AREA MAY BEOPERATION IN THIS

TJ = MAX RATED

1ms

10ms

100ms

100s

DC

1

ID,DRAIN

CURRENT(A)

0 10 20 30 40

4

8

12

16

20

50

VDS, DRAIN TO SOURCE VOLTAGE (V)

0

VGS = 4V

VGS = 5V

VGS = 7V

PULSE DURATION = 80sVGS = 10V

VGS = 8V

VGS = 6V

VGS = 9V

DUTY CYCLE = 0.5% MAX

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FIGURE 5. SATURATION CHARACTERISTICS FIGURE 6. TRANSFER CHARACTERISTICS

NOTE: Heating effect of 2s pulse is minimal.

FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENTFIGURE 8. NORMALIZED DRAIN TOSOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

Typical Performance Curves Unless Otherwise Specified (Continued)

ID,DRAINCUR

RENT(A)

0 1 2 3 4

2

4

6

8

10

5

VDS, DRAIN TO SOURCE VOLTAGE (V)

0

VGS = 9V

VGS = 4V

VGS = 5V

VGS = 6V

VGS = 10V

VGS = 8V

VGS = 7V

PULSE DURATION = 80sDUTY CYCLE = 0.5% MAX

20

IDS(ON),DRAINTOSOU

RCECURRENT(A)

VGS, GATE TO SOURCE VOLTAGE (V)

16

12

8

086420 10

4

TJ = 25oC

TJ = 125oC

TJ = -55oC

PULSE DURATION = 80sDUTY CYCLE = 0.5% MAXVDS > ID(ON) x rDS(ON)MAX

0

0.4

0.8

10 20 30

rDS(ON),DRAINTOSOURCE

ID, DRAIN CURRENT (A)

400

0.2

0.6 VGS = 10V

VGS = 20VONRESISTANCE()

2s PULSE TEST

NORMALIZEDDRAINTOSOURCE

2.2

1.4

1.0

0.6

0.240

TJ, JUNCTION TEMPERATURE (oC)

120 160

1.8

800-40

ONRESISTANCE

PULSE DURATION = 80sDUTY CYCLE = 0.5% MAXVGS = 10V, ID = 0.6A

1.25

0.95

0.85

0.75-40

TJ, JUNCTION TEMPERATURE (oC)

NORMALIZED

DRAINTOSOURCE

BREAKD

OWNVOLTAGE

160

1.05

1.15

0 40 80 120

IDS = 250A1000

200

00 20 50

C,CAPA

CITANCE(pF)

600

VDS, DRAIN TO SOURCE VOLTAGE (V)

800

400

10 30

CISS

COSS

CRSS

40

VGS = 0V, f = 1MHzCISS = CGS + CGDCRSS = CGDCOSS CDS + CGD

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FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE

FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE

Test Circuits and Waveforms

FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS

Typical Performance Curves Unless Otherwise Specified (Continued)

ID, DRAIN CURRENT (A)

gfs,TRANSCOND

UCTANCE(S)

0 4 8 12 16

1

2

3

4

5

200

TJ = -55oC

TJ = 25oC

TJ = 125oC

PULSE DURATION = 80sDUTY CYCLE = 0.5% MAX

0 2 3

0.1

10

2

ISD,SOURCETODRA

INCURRENT(A)

VSD, SOURCE TO DRAIN VOLTAGE (V)

102

1

5

5

2

4

TJ = 25oC

TJ = 150oC

2PULSE DURATION = 80sDUTY CYCLE = 0.5% MAX

QG, GATE CHARGE (nC)

VGS,GATETOSOURCE(V)

0 4 6 10

5

15

20ID = 5.2A

10

0

2 8

VDS = 80V

VDS = 50V

VDS = 20V

tP

VGS

0.01

L

IAS

+

-

VDS

VDD

RG

DUT

VARY tP TO OBTAIN

REQUIRED PEAK IAS

0V

VDD

VDS

BVDSS

tP

IAS

tAV

0

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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-

out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate andreliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result

from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see web site http://www.intersil.com

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Intersil Corporation

P. O. Box 883, Mail Stop 53-204Melbourne, FL 32902

TEL: (407) 724-7000

FAX: (407) 724-7240

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TEL: (886) 2 2716 9310

FAX: (886) 2 2715 3029

FIGURE 16. SWITCHING TIME TEST CIRCUIT FIGURE 17. RESISTIVE SWITCHING WAVEFORMS

FIGURE 18. GATE CHARGE TEST CIRCUIT FIGURE 19. GATE CHARGE WAVEFORMS

Test Circuits and Waveforms (Continued)

VGS

RL

RG

DUT

+

-VDD

tON

td(ON)

tr

90%

10%

VDS90%

10%

tf

td(OFF)

tOFF

90%

50%50%

10%PULSE WIDTH

VGS

0

0

0.3F

12VBATTERY

50k

VDS

S

DUT

D

G

Ig(REF)0

(ISOLATED

VDS

0.2F

CURRENTREGULATOR

ID CURRENTSAMPLING

IG CURRENTSAMPLING

SUPPLY)

RESISTOR RESISTOR

SAME TYPEAS DUT

Qg(TOT)

Qgd

Qgs

VDS

0

VGS

VDD

Ig(REF)

0

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