irst sipm characterizations and application studies · 2007. 7. 27. · 28 june 2007 g. pauletta:...

28 June 2007 G. Pauletta: PD07, Kobe, Japan 1

IRST SiPM characterizations and Application Studies

G. Paulettafor the

FACTORcollaboration

Outline

1. Introduction (who and where)2. Objectives and program (what and how)

3. characterizations4. Applications


FACTOR3-year project (2007 – 2009) funded by INFN

Participants:INFN laboratories and/or universities at:Trieste, Udine, Messina

collaborating withITC (now Bruno Kessler Foundation) -IRST

Trento, Italy

Background: 2005: INFN funds project (DASiPM) for the development of SiPM devices, mainly for PET application 2007: INFN funds continuation of DASIPM and expands development to other applications (FACTOR)

INFN-Trieste has a long – standing collaboration with IRST in the development of Silicon-based detectors for application in accelerator, underground and space –based experimental particle physics.


MotivationsThe FACTOR collaboration interested in the development of the device and in its optimization for application to:

Present application interests:

• Calorimetry with fiber-based optical readout• Large – area scintillator – based muon counters • Scintillating fiber – based tracking• future space experiments for detection of UHECR• FEL studies and instrumentation• future large – area, ground – based x-ray telescopes

Action Plan:• comparative studies for detailed understanding of device characteristics• Application tests•Optimization of properties as a function of application


13

14

15

16

17

18

19

20

0 0.2 0.4 0.6 0.8 1 1.2 1.4depth (um)

Dop

ing

conc

. (10

^) [1

/cm

^3]

0E+00

1E+05

2E+05

3E+05

4E+05

5E+05

6E+05

7E+05

E fie

ld (V

/cm

)

DopingField

n+ p

Shallow-Junction SiPM

p+ subst.

π epi

n+

*C. Piemonte “A new Silicon Photomultiplier structure for blue light detection” NIMA 568 (2006)

Present IRST technology*

Distinguishing characteristics:1) Very shallow junction2) ARC optimized for short wavelenghts (~400nm)3) polysilicon quenching resistors


Development HistoryDevelopment started at the beginning of 2005

Baseline geometry

SiPM structure:- 25x25 cells- microcell size: 40x40mm2

Development has continued over last two years: several succeeding production runs to to develop geometries for different applications

Geometry of baseline model NOT optimized formaximum PDE

( fill factor ~20%) .

1mm

1mm

and to optmize operational characteristics


Principal characteristics of interest• Gain• Noise

dark countafterpulsingoptical cross-talk

• PhotoDetection Efficiency (PDE)• Dynamic Range • Time characteristics

rise – time, resolution, recovery time• Radiation hardness• Sensitivity to magnetic fiels

Other considerations•Packaging•Readout electronics


Device characterization1,2

• Static measurents: IV measurements for rapid test of device properties, uniformity and stability

• Dynamic tests: Output signal characterization and stability using noise signals in the dark

Signal rise time and fall timeGainDark countOptical cross – talkAfterpulsing

• PhotoDetection Efficiency

1)All characterizations reported here are for 1mm2 devices 2) for a thorough characterization of the first SiPM prototypes fabricated at ITC-irst see C. Piemonte, IEEE TNS, February 2007


Static measurements-1

0 10 20 30 40100p

1n

10n

100n

1µ

reverse Voltage (V)

Cur

rent

(A)

IRST 00 IRST 02 IRST 08 IRST 11 IRST 03

Ileak

VBD

Ibd

SiPM Vbd (V) Ibd (nA)IRST-00 32,5 3,6IRST-02 33,0 3,6IRST-03 33,0 3,1IRST-08 33,5 3,2IRST-11 33,5 3,8

Itot

( )( )

, since and

. count dark and gain toprop. is

current dark

2VIVDCVG

DCGIDCG

III

dc

dc

leaktotdc

∝

∝∝∝

−=

IRST 1mm2

second batch

Sensitive to principal characteristics

Rapid check functionality & uniformity

Baseline version

IRST devices generally very uniform


0 10 20 30 40 50 601n

10n

100n

1µ

10µ

100µ

reverse Voltage (V)

Cur

rent

(A)

Blue enhanced 3x3 SiPM PHOT 18 PHOT 19 PHOT 20

SiPM Vbd (V) Ibd (nA)Phot-18 52,5 125,8Phot-19 49,5 260,6Phot-20 49,0 98,7Phot-21 51,0 6,5Phot-22 53,0 6,9Phot-23 55,0 6,0

Photonique 9mm2

Blue sensitive


0 10 20 30 40 50 60 70100p

1n

10n

100n

1µ

10µ

reverse Voltage (V)C

urre

nt (A

)

blue enhanced 1x1 SiPM PHOT 21 PHOT 22 PHOT 23

Photonique 1mm2

Green-red sensitive



-0,2 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8-200,0µ

0,0

200,0µ

400,0µ

600,0µ

800,0µ

1,0m

1,2m

1,4m

1,6m

1,8m

direct Voltage (V)

Cur

rent

(A)


SiPM Rq (Ohm)IRST-00 669IRST-02 612IRST-03 619IRST-08 697IRST-11 590

SiPM Rq (kOhm)Phot-18 2,29Phot-19 1,52Phot-20 1,24Phot-21 39,8Phot-22 17,4Phot-23 37,8

IRST 1mm2

second batch

Photonique 9mm2

Blue sensitive

Photonique 1mm2

Green-red sensitive

-1 0 1 2 3 4 5 6 7 8 9 10 11

0,0

50,0µ

100,0µ

150,0µ

200,0µ

250,0µ

direct Voltage (V)C

urre

nt (A

)

Phot 21 Phot 22 Phot 23

Ω≈× k390625


0 6 12 18 24 300,0

50,0p

100,0p

150,0p

200,0p

250,0p

300,0p

350,0p

400,0p

450,0p

reverse Voltage (V)

Cap

acita

nce

(F)



0 10 20 30 40 5045,0p

50,0p

55,0p

60,0p

65,0p

70,0p

75,0p

80,0p

85,0p

90,0p

reverse Voltage (V)

Cap

acita

nce

(F)

Photo 21 Photo 22 Photo 23

SiPM Vdep (V) Cdep (pF)IRST-00 21 54IRST-02 21 55IRST-03 21 55IRST-08 21 55IRST-11 21 54

fF90625 ≈÷


dynamic measurements-1Amplifier used for fast characterization of SiPMs:Agilent ABA-52563 3.5 GHz RFIC Amplifier(economic, compact, internally 50-Ω matched, gain ~ 20 dB)Dimensions 1.8 x 1.8 mm2

Orange trace: input from pulse generator, FWHM = 0.9 ns, tr = tf = 300 psRed trace: amplifier’s output


ns

MRFormitech q

400 imerecovery t

, 9.0 :F1

≈

Ω≈

MRS SiPMs have 2.5 to 50 times larger Rq values than IRST (polysilicon) devices longer recovery rimes

dynamic measurements-2

IRST :recovery time ~70 ns



Linear fit intercept with V-axisgives VBD = 33.04 V

1 mm2 type AVBD ≈ 33 VD.C.(ΔV=2V) ≈ 1.5 MHz


1 mm2 MRS devicesVBD ≈ 20 VD.C.(ΔV=2V) ≈ 2 MHz


1 mm2 MRS deviceVBD ≈ 41 VD.C.(ΔV=2V) ≈ 2.2 MHz


type “A”, D.C.(ΔV=2V) ≈ 1.5 MHztype “B”, D.C.(ΔV=2V) ≈ 2- 3 MHztype “D”, D.C.(ΔV=2V) ≈ 1 MHz




Measurements performed in a climatic chamber (with humidity control)The amplifier was located outside the chamber, connection via a special 18 GHz ft50 Ω cable

Temperature Dependences - 1

dVBD /dT ≈ 78 mV/C



Temperature Dependences - 2

dVBD /dT ≈ 72 mV/C


dynamic measurements-8 Temperature dependences - 3


The following are static measurements performed at ITC-IRST and reported on at a recent (June 13th 2007)

workshop at Perugia


Signal properties

Charge spectra – Tint=100nsC. Piemonte et al. “Characterization of the first prototypes of SiPM fabricated at ITC-irst”IEEE TNS, February 2007

100ns 100ns 100ns

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

-2.0E-09 -1.5E-09 -1.0E-09 -5.0E-10 0.0E+00Charve (V*s)

Nor

mal

ized

Cou

nt

T=22oC s

d a

Well defined peak of thesingle pulses.Gaussian distribution widthdetermined by:- noise of the system- tiny gain non-uniformities

Tails due to:optical cross-talk + afterpulse

C. Piemonte: June 13th, 2007, Perugia


y = -40375x + 2E+06

y = 0.0765x + 28.83328

28.5

29

29.5

30

30.5

31

-10 0 10 20 300.00E+00

5.00E+05

1.00E+06

1.50E+06

2.00E+06

2.50E+06

VbdGain

G Ampl

0.0E+00

5.0E+05

1.0E+06

1.5E+06

2.0E+06

2.5E+06

3.0E+06

3.5E+06

4.0E+06

28.5 29.5 30.5 31.5 32.5 33.5 34.5 35.5

-5°C5°C15°C25°C

Gain & Dark countDC

0.0E+00

5.0E+05

1.0E+06

1.5E+06

2.0E+06

2.5E+06

3.0E+06

0 1 2 3 4 5 6 7 8 9 10

-5°C5°C15°C25°C

Performed in the climatic chamber. Devices from the third batchD

ark

coun

t

Gai

n

VB

D (V

) Gain

Temp. (C)

Over-voltage (V) Bias voltage (V)



Gain & Dark count (uniformity)

DC

0.0E+00

5.0E+05

1.0E+06

1.5E+06

2.0E+06

2.5E+06

3.0E+06

3.5E+06

4.0E+06

0 2 4 6 8Over-voltage (V)

Dar

k C

ount

(Hz)

G AMPL

0.0E+00

5.0E+05

1.0E+06

1.5E+06

2.0E+06

2.5E+06

3.0E+06

0 2 4 6 8Over-voltage (V)

Gai

n

Gain and Dark countmeasured on devices from the same wafer



Short integration time⇒ only single/double/….pulses

are counted

0

200

400

600

800

1000

1200

1400

-8E-10 -6E-10 -4E-10 -2E-10 0E+00QDC

Cou

nts

33.5V35.5V

double peak

Charge (a.u.)4 3 2 1 0

ΔV = 4.5V 1.5V

Number of events with optical cross-talk increaseswith voltage

Cross-talk below 5%at 4V over-voltage.

Optical cross-talk



After-pulsing

-0.35

-0.3

-0.25

-0.2

-0.15

-0.1

-0.05

0

0.05

-1.0E-08 1.0E-08 3.0E-08 5.0E-08 7.0E-08Time (s)

Vol

tage

(V)

y = 0.0067x2 - 0.4218x + 6.639

y = 0.0068x2 - 0.4259x + 6.705

0.00

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0.16

31 32 33 34 35 36Voltage (V)

Afte

rpul

se/p

ulse

Tint = 60nsTint = 100ns

Events with after-pulsemeasured on a single micropixel.

The amplitude of the after-pulse increases as the cell recovers to its opertional condition

After-pulse probability vs bias

It increases following a parabolic law:

01PPP ca ⋅=

linear with Vbiaslinear with Vbias



dark pulses light pulses

DC currwith light

DC curr. wo light

Photo-detection efficiency



Photodetection efficiency

30

40

50

60

70

80

90

100

300 400 500 600 700 800Wavelength (nm)

QE

(%)

0V-2VSimulSimul ARC

0.00E+00

2.00E+00

4.00E+00

6.00E+00

8.00E+00

1.00E+01

1.20E+01

1.40E+01

1.60E+01

350 400 450 500 550 600 650 700 750 800

Wavelength (nm)

PD

E (%

)

36V36.5V37V37.5V38V

ΔV=2V

2.5V

3.5V3V

4V

QE vs Wavelengthlong λ:low PDE becauselow QE

short λ:low PDE becauseavalanche triggered byholes

Measured on a diode

Reduced bysmall epithickness

Reduced by ARC

Area efficiency ~ 20%

PDE=QE*Pt*Ae

QE=quantum eff.Pt=avalanche prob.Ae=area eff.

0.16

0.14

0.12

0.10

0.08

0.06

0.04

0.02

0

PDE

350 400 450 500 550 600 650 700 750 800



1x1mm 2x2mm 3x3mm (3600 cells) 4x4mm (6400 cells)

Circular(1.2 mm –diameter)

increased fill factor: 40x40mm => 44%50x50mm => 50%100x100mm => 76%;

last batch

Array



Noise and charge resolution

0.0E+00

5.0E+05

1.0E+06

1.5E+06

2.0E+06

2.5E+06

3.0E+06

3.5E+06

29 30 31 32 33 34 35

5C GAIN 5C Dark Coun

30.5

31

31.5

32

32.5

33

-1.50E-08 -1.00E-08 -5.00E-09 0.00E+00

Pulse Area (Vs)

1x1mm2 SiPM with 40x40μm2 cells

0.0E+00

1.0E+06

2.0E+06

3.0E+06

4.0E+06

5.0E+06

30 31 32 33 34 35

20C GAIN20C Dark count

T=5C

T=20C

resolution limited by electronic noise

Charge spectra at differentVoltages with the same light Intensity (pulsed)

3.5p.e.

5p.e.

6.5p.e.

8p.e.

9.5p.e.

First signal and noise characteristics of the last devices



applications


Characterization of SiPMs (1 mm2from second batch) used for preliminary at Fnal test beam

Visual inspectons (SiDet) and dynamic tests at lab 6 prior to use of SiPMs in Test Beam yielded results compatible with IRST measurements:VB = 34.1 VGains between ~1 and 2 x 106

dark count vs. bias


Preliminary study of Scint. Strip viewed by IRST SiPM at the FNAL test beam

Beam (12 GeVprotons)

Counter readout on both ends by SiPMs

T956 neutron counter arrays

Bias = -36V (ΔV=2V)

Data with 120 Gev proton - beam

6..

..

106.1

5.1%99

..5.6

×≈

≈=

≈

G

MHzN

epN

cd

ep

ε


Future work at fnal

Beam (p,π,e)

T956 neutron counter arrays:64 scint strips each(read out by wls fiber and MAPMTs)

Add one plane of scint strips read out by Wls fiber andSiPMs

Scintillator strips : 4cm x 1cm x (1 – 2 m), read out by wls fiber. Groove for fiber extruded with scintillator

Whole assembly mounted onmovable (x,y) support

irst sipm characterizations and application studies · 2007. 7. 27. · 28 june 2007 g. pauletta:...

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