is 2032-8 (1965): graphical symbols used in
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है”ह”ह
IS 2032-8 (1965): Graphical symbols used inelectrotechnology, Part 8: Semiconductor devices [LITD 5:Semiconductor and Other Electronic Components and Devices]
IS : 2032 ( Part VIII) - 1965
Indian Standard
GRAPHICAL SYMBOLS USED IN ELECTROTECHNOLOGY
PART VIII SEMICONDUCTOR DEVICES
Electrotechnical Standards Sectional Committee, ETDC 1
Chairman
SHBI K. P. S. NAIR
Members Saar S. N. VINZE ( Alttrnate to
Shri K. P. S. Nair ) ADDITIONAL CHIEF ENGINEER
Representing
Central Water 82 Power Commission ( Power Wing)
DIR&TOP. OF TELEQR~PHS (L) ( Alternate )
Paos D. J. BADKAS
Directorate General of Posts & Telegraphs ( Ministry of Transport & Communications )
Indian Institute of Science, Bangalore . .I DR H. V. GOPALAKRISHNA (Alternate )
SHRI G. C. BHATTACHARYA Heavy Electricals ( India ) Ltd, Bhopal SHRI B. S. BHA~OWALIA ( Alternata )
SHEI V. W. CHEMBURKAR Indian EIectrical Manufacturers’ Association, Calcutta
S~sr C. G. W. OVERTON (Alternate) SH~I P. N. DEOBHAKTA Electrical Appliances and Accessories Sectional
Committee, ETDC 7, IS1 DIRECTOR Electronics and Radar Development Establishment
( Ministry of Defence ), Bangalore SHRI G. D. JOOLEKAR Primary Cells and Batteries Sectional Committee,
ETDC 10, ISI; and Secondary Cells and Batte- ries Sectional Committee, ETDC 1 I, IS1
SHRI S. N. MUKERJI National Test House, Calcutta SRRI U. K. PATWARDHAN Transformers Sectional Committee, ETDC 16, IS1 SERI R. RADHAKRISRNAN Central Electra-Chemical Research Institute
( CSIR ), Karaikudi SERI H. N. VENKOBARAO ( Alternate )
SERI A. R. NARAYANA RAO Institution of Engineers ( India), Calcutta SHR~ V. V. RAO Department of Posts & Telegraphs, Wireless Plan-
ning and Co-ordination Wing Sgzt~ U. S. SAVAKOOR Inspection Wing, Directorate General of Supplies
SH~I A. S. NA~AUKATTI ( Alternate ) and Disposals, Department of Supply
SRRI S. SWAYAXBTJ Switchgear and Controlgear Sectibnal Committee,
SERI R. K. TANDAN ETDC 17, IS1
National Physxal Laboratory ( CSIR), New Delhi
( Continued on pug# 2 )
INDIAN STANDARDS INSTITUTION MANAK BHAVAN, 9 BAIiAKWR SHAH ZAFAR MARG
NEW DELHI
IS:2032(PartVIII)-1965
Members SH~I S. THIXUVENXATAOEIABI
SERB. V. VENUQOPALAN
Rc/mwnting Electronic Equipment Sectional Committee,
ETDC 24, IS1 Insulators and Accessories Sectional Committee,
ETDC 3, ISI; and Conductors and Cables
SHRI J. S. ZAVEFU Sectional Committee! ETDC 32, ISI
RotaIt Machinery SectIonal Committee, ETDC 15,
@XI Y. S. VENKATESWARAN, Director, IS1 ( Ex-o&u Member) Deputy Director (Electrotech- nical ) ( Sucr.&ry )
Semiconductor Devices ,Sectional Committee, ETDC 40
Chairman I)B B. H. WADIA
Members
Semiconductors Ltd, Poona
DB K. S. BALAIN Centra;a:lectronics Engineering Research Institute,
Da P. R. DASTIDAR Atomic Energy Establishment, Trombay, Bombay S~sr M. M. FAROOQUI ( Alternate 1
SHRI B. P. CHOSE Wo CDXZ G: S. MALHAN
SHRI A. V. RAJU ( Alternate ) COL M. L. MIDHA
gational Test House Calcutta Directorate of Tech&al Development & Production
( Air ) ( Ministry of Defence )
SH~I K. N. TIWARI ( Alternute) SHRI K. C. RAMADOSS
DR RAM P~ASAD SERI S. P. SURI ( Altcmate )
SXRI K. R. SAVOOR SHRI C. G. SUBRAMANYAN
Bharat Electronics Ltd, Bangalore Controller General of ,Research and Development
( Ministry of Defence ) SHBI B. BALABAMASWAMY ( Alterno& )
SHBI S. VENKATABA~AN Radio Manufacturers’ Association of India ( RMAI ), Calcutta
SHRI A. K. GOPALAKXISH- NAN (Alternate )
SHRI Y. S. VENIATESWABAN, Director, IS1 ( Ex-o&o Member) Deputy Director ( Electrotech- nical )
Director General of Inspection, Chief Inspectorate of Electronics ( Ministry of Defence )
Directorate General of Posts & Telegraphs ( Ministry of Transport & Communications )
National Physical Laboratory ( CSIR ), New Delhi
Sccretarics
SEXI S. SBINIVASAN
Deputy Director, ISI.
SFIIU N. SXUNIVASAN
Assistant Director ( Electrotechnical), IS1
2
IS:2032(Putvm)-1965
Indian Standard
GRAPHICAL SYMBOLS USED IN ELECTROTECHNOLOGY
PART VIII SEMICONDUCTOR DEVICES
0. FOREWORD
0.1 This Indian Standard ( Part VIII ) was ado ted by the Indian Standards Institution on 27 April 1965, after the raft finalized by the c! Electrotechnical Standards Sectional Committee in consultation with the Semiconductor Devices Sectional Committee had been approved by the Electrotechnical Division Council.
0.2 It is common in electrical and electronic engineering practice to employ graphical symbols to denote the various means and devices used when making diagrams of connections. The connecting devices and the points where they make contact with the apparatus may be indicated in tht diagram. With the object of standardizing the symbols to meet the various needs of the electrical and electronic industry based, as far as possible, on symbols internationally agreed, a series of standards is being formulated.
0.3 In selecting and devising these symbols the object has been to ensure, as far as possible, that they are self-explanatory, easy to draw and in general use. It may be necessary in detailed diagrams to indicate the physical structure of the apparatus, the actual position of the terminals and so forth, but, where possible, the principle of the standard symbols should be followed.
0.4 It may be possible that for the devices specified in this standard other symbols are used in this country. However, with the view to unification in the use of these symbols, only one symbol based on the internationally agreed symbols for each of the devices has been specified.
0.6 Sieparate standards for graphical symbols used in different departments of electrotechnology are being prepared. other parts are:
This part is eighth in this series;
IS : 2032 ( Part I )-I962 Graphical symbols used in electrotechnology : Part I Classification and definitions of diagrams and charts
IS : 2932 ( Part II )-I962 Graphical symbols used in electrotechno- logy : Part II Kind of current distribution systems and methods of connection
IS : 2032 ( Part III )-1962 Graphical symbols used in electrotechno- logy : Part III Circuit elements and variability
3
IS : 2032 ( Part VIII ) - 1965
IS : 2032 (Part IV )-I964 Graphical symbols used in electrotechno- logy : Part IV Rotating machines and transformers
IS : 2032 ( Part V )-I965 Graphical symbols used in electrotechno- logy : Part V Generating stations and substations
IS : 2032 ( Part VI )-1965 Graphical symbols used in electrotechno- logy : Part VI Motor starters
IS : 2032 ( Part VII )- 1965 Graphical symbols used ;n electrotechno- logy : Part VII Switchgear and auxiliaries
ij.6 The development of an agreed system of graphical symbols for semi- conductor devices has been receiving the ,attention of the International Electrotechnical Commission (IEC) and this draft follows closely the symbols recommended in IEC 3 ( Central Office ) 456 ‘ Draft symbols for semiconductor devices ‘. Besides the series of symbols for complete devices, the standard also includes a list of symbol elements and basic rules for the use of the symbols. Symbols for use in block diagrams are under consideration.
0.7 This standard is one of a series of Indian Standards now being pre- pared to cover transistors, diodes, and other semiconductor devices which are being manufactured and widely used in the cpuntry. The other standard, so far published, in. this series is:
IS : 1885 ( Part VII )-1965 Electrotechnical vocabulary : Part VII Semi-conductor devices
1 ., SCOPE
1.1 This standard ( Part VIII ) conductor devices.
covers the graphical symbols for semi-
2. SYMBOL ELEMENTS
2.1 Envelope NOTE 1 -If necessary, the envelope
symbols may be split in the case of mul- tiple devices withm the same envelope.
0 NOTE 2 - I,f the envelope is’ ,used as a
screen, the connections to it sh&dd be shown as a dot on the envelope ( see 4.2 ). If a separate screen connection 4s used
0
this should be indicated in the following manner:
C3
4
2.2 Semiconductor Region
2.3 Semiconductor Region with One Ohmic Connection - As shown, the thick Line is the semicon- ductor region and the thin line drawn at right angle is the ohmic connec- tion.
2.3.1 Semiconductor region with several ohmic connections.
Examples with two ohmic con- nections.
2.4 Rectifying Junction or JUPC- tion which Influences a Deple- tion Layer
2.4.1 P region on N region.
2.4.2 .N region on P region.
NOTE -The arrow is always per- penci‘cular to the semiconductor region in this case.
2.5 Emitter on a Region of Dis- similar Conductivity Type - The slanting line with arrow represents the emitter as intended for normal use.
2.5.1 P emitter on N region.
2.5.2 Several P emitters on JV region.
2.5.3 N emitter on P region.
2.5.4 Several N emitters on P region.
IS:2932(PartVIII)-1965
++
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IS : 2032 ( Part VIII ) - 1965
2.6 Collector on a Region ef I%- similar Conductivity Type-The slanting line represents the collector as intended for normal use.
2.6.1 Several collectors on a region of dissimilar conductivity
type-
2.7 Transition Between Regions of Dissimilar Conductivity Types either P to N, or N to P -. The short slanting line without external connection indicates the point of change along the horizontal line from P to N or from N to P. No ohmic connection shall be made to the short slanting line.
2.8 Intrinsic Region Between Two Regions - The intrinsic region ( Z region ) lies between the
. linked slanting lines. Any ohmic connection to the Z region shall be made between the short slanting lines and not to them.
2.8.1 Between regions of dls- similar conductivity types giving either a, PIN or a NIP structure.
2.8.2 Between regions of similar conductivity types giving either a PIP or a NIN structure.
2.8.3 Between a collector and. a region of dissimilar conductivity types giving either a PIN or a NZF structure. The connection to the collector is made to the long slanting line.
2.8.4 Between a coIlector and a region of similar conductivity types giving either a PIP or a NZN structure. The connection to the collector is made to the long slanting line.
1
6
rsr2932(Putvm)-1965
2.9 Symbols for Special Puac- tions - If necessary, a special func- tion or property essential for circuit operation may be indicated by a supplementary symbol placed adja- cent to or forming part of the symbol for the devices. For such devices an envelope shall always be used. Examples of supplementary symbols are given in 2.9.1 to 2.9.6.
2.9.1
2.9.2
2.9.3
2.9.4
2.9.5
2.9.6
Magnetic field dependence.
Light dependence.
x \\
Temperature dependence.
Capacitive device.
Tunnelling device.
Breakdown device.
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3. GUIDE FOR APPLYING THE SYSTEM OF SYMBOLS
3.1 In general, the angli at which an external connection is brought to a symbol element has no significance.
3.2 The envelope symbol may be omitted if no confusion would arise and if; none of the elements of the device is connected to the envelope when it is used as a screen ( see also 2.9 ).
3.3 Where the envelope symbol is used, the leadr available for external connection should be indicated by lines coming out of the envelope.
3.4 Orientation of the symbol including a mirror-image presentatioo, doa not change the meaning of a symbol.
3.5 The extensions at the ends of the horizontal line representing the semiconductor region(s) beyond an emitter, a eolleetor or an ohmic con- nection have no particular significance,
ISr2032(PartVrlI)-1965 .
3.6 The elements of the symbol shall be drawn in such an order as to show clearly the operating function of the device.
3.7 To draw the symbol of a semiconductor dev:ce, start at an electrode whose polarity is known ( usually an emitter ) and proceed along the device, showing all of its reions individually. ’ Finally, indicate ohmic connections wh>re required. ‘_
&a!#=
PN diode. 4
b) PNP transistor.
4 PNPNIIVIP Transistor in- cluding 2 P-type emitters, 6 ohmic connections and 1 collector, each emitter being located between 2 ohmic connections.
Nom -The lettm arc not part of the Symbol.
4. SYMBOLS FOR COMPLETE SEMlCONDUCTOR DEVICES
4.1 PNP tram&or.
4.2 NPN transistor with coll&or connected to the envelope.
43 . q
IS : 2032 ( Part VJIJ ) - 1965
4.3 NPN transistor with transverse biased base.
4.4 P.NIP transistor
4.5 PJ?ZP transistor with ohmic connection to the intrinsic region.
4.6 PAIN transistor with ohmic connection to the intrinsic region.
4.7 Unijunction transistor N-type base.
4.8 Unijunction transistor PItype base.
4.9 Field-effect transistor N-type base.
4.10 Field-effect trcnsistor P-tVDe base.
with
with
with
with
ISr2032(PutVllI)-1%5
4.11 Semiconductor triode, PNP& type switch.
4.12 Semiconductor triode, NPNP- type switch.
4.13 Semiconductor diode, PNPN- type tih.
4.14 Semiconductor rectifier diode.
*4.15 Semiconductor controlled rectifier, general symbol.
I
*4.16 Semiconductor controlled rectifier PJVPN.
4.17 Semiconductor controlled rectifier NPNP.
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*4.18 Semiconductor controlled rectifier ( with two gata ) PNPN.
_-_____. ..__-- *Though there symbola are in general UC, they arc not strictly in cdbrmity with the
guide for use of symbola and are still under comidcratin.
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4.19 PNP photo transistor.
4.26 Temperature-dependent diode.
4.21 Variable capacitance diode.
4.22 Tunnel diode.
4.23 Tunnel triode, PNP-type.
4.24 Breakdown diode, unidirec- tional.
4.25 Breakdown diode, bidirectionai.
4.26 NPN avalanche transistor.
-63
0 J
0 'J
@
J
11
IS : 2032 ( Part VIII ) - 1965
4.27 PllrJtoco;lductive ccl I with symmetrical conductivity.
4.28 Photoconductive cell with asymmetrical conductivity.
4.29 Photovoltaic cell.
4.30 Hall-effect devices, with four ohmic connections.
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