kevin wangnanofabrication seminar2008/4/27. aguirre, c.m., martel, r. et al. engineering physics,...
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Concept
Aguirre, C.M., Martel, R. et al. Engineering Physics, EP Montréal Chemistry, U. of Montréal
Backgated
Pentacene Island
Thin Film
Fabrication – Island
Double-wall nanotubes Form gaps - electrical breakdown
Contacts – optical lithography Ti and Pd by e-beam evaporation Anneal (vacuum) 550°C, 1h
Post-Breakdown
Fabrication – Island (cont.)
Spin-coat precursor 2 mg/mL chloroform solution
13,6-N-sulfinylacetamido-pentacene Converts to pentacene
(170-200°C)
Asymmetric CNT – Pd
Fabrication – TFT
SWNTs (10 nanotubes/μm2)
Ti contacts, optical Lithography, liftoff Sonicate free nanotubes Anneal (vacuum) 550°C, 1h
Pentacene (50nm) Vacuum sublimation (0.2nm/s)
Performance – Island
40 nm gap device Ion/Ioff = 100 Ion = 2nA (Vds = 8V)
Superlinear IV Poor gate control tox = 20 nm
Subthreshold Swing 1.3V/dec
Performance - TFT
CNT array – ideal linear behavior Au, Ti – nonlinear, large contact
barriers
Barrier at CNTlowered by E-field enhancement Molecular energy shift
Conclusion
Carbon nanotubes enhance transistor current
Effective barrier lowering at CNT-Pentacene interface