kinetic monte carlo simulations of helium implantation and ......kinetic monte carlo simulations of...
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Kinetic Monte Carlo simulations of Helium implantation and desorption from Nickel
L. Gámez1, B. Gámez1, C.J. Ortiz2, M.J. Caturla2,E. Martínez1, J. M. Perlado1
1 Instituto de Fusión Nuclear (DENIM) Universidad Politécnica de Madrid (UPM)
2 Dept. de Física AplicadaUniversidad de Alicante (UA)
T-meeting on Accelerator Simulation and Theoretical Modelling of Radiation Effects(TM-34567) Kharkov, Ukraine, 9-13 June, 2008
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Irradiation of structural materials can alter significantly their mechanical properties
In the presence of gases an enhanced production of bubbles and voids may occur
He could induce swelling of these materials due to the interaction withvacant sites in the lattice and the stabilization of voids and formation of bubbles.
The effects on damage evolution is a very complex problem that depends on a large number of parameters: temperature, dose rate, He per dpa ratio, crystal structure, alloy composition,…
It is necessary to connect different length scales, starting from:microscopic production of defectsinteraction of He with vacancies and self-interstitialsinteraction with grain boundaries and dislocationsdiffusion mechanisms for Hekinetics of bubble and void nucleation.
INTRODUCTION
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In order to account for all processes a multiscale model is required
MeV KeV eVBinary collision models
TRIM
MARLOWE
Multiple collisionsClassical
Molecular Dynamics
Diffusion ProcessesRate Theory
Kinetic Monte Carlo
Energy
Time10-12 s 10-10 s 10-3 - 103 s
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Significant differences in swelling behaviour
depending on the material: f.c.c. vs b.c.c.
Void swelling in FCC and BCC metals irradiated with fission neutrons B. N. Singh, J. H. Evans, JNM 226 (1995) 277-285
Austenitic (f.c.c.) materials are prone to swelling while ferritic (b.c.c.) materials are resistant to swelling
Production bias model: in-cascade clustering and 1D migration responsible for these differences
Hola
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Significant differences are already observed in the initial
damage state depending on material
(a) Fe 30keV, 66 defects (b) Cu 30keV, 69 defects.
Similar number of defects but more vacancy clustering in Cu than in Fe
bcc Fe fcc Cu
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Voi
d S
wel
ling
(%)
Dose = 0.1 dpa, Dose Rate = 10-8 dpa/s1000 appm He/dpa
0
0.01
0.02
0.03
0.1 0.15 0.2 0.25 0.3 0.35 0.4
FCC Cascades (HeV) BCC Cascades (HeV) BCC Cascades (HeV + V)
T/Tm (K)
Void swelling in FCC and BCC metals irradiated with fission neutrons
B. N. Singh, J. H. Evans, JNM 226 (1995) 277-285
KMC reproduce qualitatively the experimental swelling dependence with temperature for fcc and bcc
Long term evolution of He-V clusters depends on initial
damage state
M. J. Caturla, N. Soneda, T. Diaz de la Rubia, M. Fluss, J. Nucl. Mat. 2006, 351, 78
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Calculations of electron an He irradiation of nickel
Ni selected as a surrogate material for austenitic alloys
Defect production in electron irradiated Ni ⇒ Validation for the model
Desorption of helium from nickel to understand nucleation andstability of He-V complexes
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Modeling long term evolution of defects in Ni
Values for migration energies of vacancies and Self-interstitials
from EAM calculations [1] V1 0.44
V2 12.1I1 0.15I2 0.12I3 0.04In 0.12/n
Defect t ype
M igrat ion energy
( eV)
Pre -factor
( cm 2/s)
0.85 eV
0.57 eV0.12 eV0.10 eV0.10 eV0.10 eV
Values for binding energies of vacancy [2] and self-interstitial [1] clusters
from EAM calculations
[1] A. Almazouzi et al. Mater. Res. Soc. Symp. Proc. 735 (1999) 685-690[2] J. B. Adams and W. G. Wolfer, J. Nucl. Mater. 166 (1989) 235[3] C. Domain, private communication
Calculations using KMCO of isochronal annealing of electron irradiated Ni with a concentration of 2 appm, from 4.5K to 612K
All self-interstitials considered mobile
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Stage Peak-Exp.* Peak-KMCO56K 45K
61KIII (vacancies) 340K 340K
I (self-interst)II (self-int .clust)
Stage I Stage III
Stages I and III corresponding to self-interstitial migration and vacancy migration are resolved for this low dose in agreement with experiments
* from review by Ehrhart on Landolt-Börnstein, New Series III/25
Resistivity recovery stages in electron irradiated Ni
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Trapping sites for self-interstitials I-T binding = 0.25 eV
Including trapping sites for self-interstitials changes annealing stagesSimilar behaviour observed in Ni-Si alloys
* from review by Ehrhart on Landolt-Börnstein, New Series III/25
Effect of traps on resistivity recovery stages
on electron irradiated Ni
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Modeling long term evolution of defects in Ni
in the presence of He
Species/React ion Reference M odel
He_int e rst it ia l C. Dom ain [3]
EAMHeV2 C. Dom ain [3]
EAM
EAM
EAM
Energy ( eV)Migrat ion energy – 0.12eV ab init io
HeV -> He_i + V Dissociat ion energy – 2.56 eVAdam s and Wolfer
[2]Migrat ion energy – 1.2 eV ab init io
HeV2 -> HeV + VBinding energy – 0.37 eV
Adam s and Wolfer [2]
HenVm -> He (n-1 )Vm + HeAdam s and Wolfer
[2]
HenVm -> HenV(m -1 ) + VAdam s and Wolfer
[2]
Values for migration energies of He and binding energies of HenVmclusters from ab initio when available and from EAM calculations
• Migration mechanisms for He:• He at interstitial position (He) • Dissociative mechanism: He substitutional HeV -> He + V• Mobility of He substitutional aided by a vacancy: HeV2 mobile• Replacement mechanism: HeV + I -> He
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0.5
1
1.5
2
2.5
0 5 10 15 20
Dissociation Energy forHe(n)V(m) -> He(n-1)V(m) + He
HeHe2He3He4He5He6He7He8He9He10
Dis
soci
atio
n En
ergi
e (e
V)
Number of Vacancies
0
1
2
3
4
5
6
0 5 10 15 20
Dissociation Energy for He(n)V(m) -> He(n)V(m-1) + V
He1He2He3He4He6He7
He8
He9
He10
0
He5
Dis
soci
atio
n En
ergy
(eV)
Number of Vacancies
J.B. Adams, W.G. Wolfer, J. Nucl. Mater. 166 (1989) 235
Binding Energies for HenVm
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• He 400 eV -> Ni• Implantation at 300K• Dose = 5.6x1012 ions/cm2
• Annealing and measurement of desorption of He from 300K until 1200K• Ramp rate 18.4 K/s• Experiments show the presence of two peaks in the rate of evolution of
Helium with temperature – peaks named B1 and B2
Experimental data from D. Edwards and E. V. Kornelsen, Surface Science 44 (1974) 1 – 10
Modeling long term evolution of defects in Ni
in the presence of He
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• He 400 eV -> Ni – damage distribution obtained with SRIM • Implantation at 300K – defects followed until steady state is reached• Annealing and measurement of desorption of He from 300K until 1200K• Ramp rate 18.4 K/s
Two peaks are also obtained from the simulations corresponding to the dissociation of He2V and HeV
Results of OKMC simulations under the conditions of
Edwards et. alN
umbe
r of H
e de
sorb
ed
Temperature (K) 300 500 700 900 1100 300 500 700 900 1100
Temperature (K)
Der
ivat
ive
of #
He
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Results of OKMC simulations for two different doses
• He 400 eV -> Ni – damage distribution obtained with SRIM • Dose 5,6×1012 ions/cm2 (Edwards et al) and 5,6×1014 ions/cm2
At higher dose a new peak appears at high temperature related to the dissociation of He2V2 cluster
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2.8 He2V2→ HeV2 +He1100 KB3
2.1 – 2.4HeV→ He + V835 KB2
1.7 – 1.8 He2V→ He +HeV~ 677 KB1
Binding energy experiments (eV)
ReactionTemperature THDS peak
[1] P. Ehrhart, Landolt-Bornstein New Series III/25, p.242 (1991)
[3] D. Edwards Jr, E.V. Kornelsen, Surface Science 44 1-10 (1974)
Summary of results of OKMC and experiments
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Conclusions
OKMC calculations based mostly on EAM data reproduces both electrical resistivity measurements and He desorption experiments (unlike in b.c.c. Fe)
Two desorption peaks are obtained for low dose He implantation in agreement with experiments
Discrepancies still exist regarding the exact position of these peaks particular the B2 peak
Ab initio values of the reaction associated to this peak could help in the understanding of these differences
At higher doses a new peak appears that has also been observed experimentally
Further calculations will include the effect of trapping sites on these desorption peaks as well as the initial damage (such as the presence of cascade damage instead of isolated Frenkel pairs)
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Acknowledgements
We thank C. Domain for providing the ab initio data used in this model
Funding agencies:
Spanish Ministerio de Educación y Ciencia
European Project PERFECT
We thank James McDonald from GuriSystems for computer support