latest advances in si drie for mems - semi.org | carpenter etch product management latest advances...

©2017 SPTS Technologies - Confidential & Proprietary

Jo Carpenter

Etch Product Management

Latest advances in Si DRIE for MEMS

2

This presentation and the information contained within it is the property of SPTS Technologies and is confidential. Any duplication, disclosure, distribution, dissemination or copying

of this presentation or its contents or use for any purpose other than that for which it is supplied is strictly prohibited, without the prior written consent of SPTS Technologies.© 2017 SPTS Technologies

Etch Process Modules

SynapseICP

HDP

Low pressure

Higher ion density

HDP

Low pressure

High ion density

Compound layers

nitrides, polymers

Dielectrics, SiC,

PZT, sapphire ....

Deep Si

Some oxide

Dual HDP source

Medium pressure

High neutral density

DSi-v & Rapier Family

≤200mm & 2/300mm

296 & 400mm Frames≤200mm

≤200mm

≤200mm

3



Broadest DRIE Etch Know-How

High Aspect Ratio

1.6 x 98 µm trenches

~60:1 AR

Smooth walls

<20nm scallops

Through Wafer

Sensors

Microphones

NEMS

50nm features

High Rate

Cavities, Caps,

ink-jets High Aspect Ratio

~0.4 µm trenches

~90:1 AR

SOI

2.5 x 25µm

Low Tilt

<0.1º

Mixed isotropic/

anisotropic

processing

High Aspect Ratio

4 x 160 µm trench/TSV

40:1 AR

Complex shapes

High Aspect Ratio

8 x 180 µm trench/TSV

22:1 AR

High Aspect Ratio

1 x 40µm trench

4



■ PoR for >60% of top 30 MEMS companies & all top 20 MEMS Foundries

■ >90% market share in ≤200mm DRIE

Total DRIE PMs = 1204

Including 160 Rapier plasma sources

Leading Install Base for DRIE

First shipments of Bosch

licensed modules in 1995

Yole – Top 30 MEMS Companies 2016

http://www.yole.fr/pagesAn/products/reports.asp

5



■ DRIE market is more competitive than ever

■ Growing number of vendors, lower module numbers

■ Forecast >16% growth just in packaging annually up to 2022

■ >1200PMs with DSi, DSi-v, Rapier and predecessors

■ But customer needs do not stand still

■ Technology and Productivity

■ Incremental improvements plus new functionality

■ Rapier XT is an evolution of the Rapier DRIE PM

■ Extending process operating windows

■ Additional hardware functionality

■ Improved service access and module architecture

Next Generation DRIE

6



■ Improved packaging/service access

■ Design driven by customer feedback

■ Rapier becoming loaded

■ Updates some OEM parts

■ Pre-empt any obsolescence issues

■ Source internals unchanged

■ Straightforward process transfer

■ Critical process transfers completed

■ Rapier XT has widest DRIE process window

Rapier XT Module

7



Rapier XT

8



■ Rapier XT has fixed, solid-state matching for source RF

■ Combined with AFT RF generator

■ Alters RF frequency within a narrow band

■ Internal algorithm adjusts frequency looking for minimum in

reflected power

■ Improves matching and reduces reflected power levels

■ Recipe choice run fixed or use the AFT

■ Benefits include…

■ Reproducible plasma for consistent results

■ Stable power output/ RF coupling

■ High control precision

■ Increased efficiency

■ Simple integration

AFT

9



■ Move to faster switching MFCs allowing access to <1s

switching times

■ Improving sidewall conditions/ quality at matched etch rates

■ Higher rates without major compromise to sidewall conditions

Fast Switching MFCs

New MFCs @ 0.5s

~6µm/min

~50nm Scallops

Current Hardware @ 1s

~3µm/min

~30nm Scallops

10



■ Use of deposition rate/uniformity as a metric

■ New combination of cooling hardware

Cooling Options for 200mm DRIE

200mm Si wafer – C4F8 Process

AfterBefore

No hot spot at centre location of ECE

11



■ Blanket removal of etch polymer with an O2 plasma

■ Measure of ion density variation at the wafer level

Polymer Influence on Tilt

Single SourceDual SourceICP

12



■ Improved polymer uniformity with new cooling hardware

■ Combined with appropriate wafer edge furniture

■ Brings overall wafer tilt <0.1º

Tilt Performance

Rapier XT tilt & overall performance exceeds that of competitor DRIE

13



■ Rapier XT has additional DRIE performance capability

■ Fast switching for improved sidewall control and higher rates

■ Broader overall process window including high flow, low pressure

■ Improved platen temperature control and uniformity

■ <1º tilt eliminating DRIE influence on MEMS devices

■ Revised architecture provides easy maintenance

■ Cleaner cable routing

■ Access to turbo for servicing etc

■ Commonality with existing Rapier

■ Software

■ Chamber volumes and furniture

■ Endpoint options

■ Provides DRIE option to cover all applications

■ High rate cavity etch to fine control features

Summary

14



Thank you for listening!

If you have further questions about the Rapier XT or any other SPTS

products please visit our booth at location ?????

latest advances in si drie for mems - semi.org | carpenter etch product management latest advances...

Documents