laurens w. molenkamp - uni-mainz.deband structure d.j. chadi et al. prb, 3058 (1972) fundamental...
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Laurens W. MolenkampPhysikalisches Institut, EP3
Universität Würzburg
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Overview
- HgTe/CdTe bandstructure, quantum spin Hall effect: 2D TI- Dirac surface states of strained bulk HgTe: 3D TI- Topological Josephson Junctions- Compressive strain: Dirac/Weyl systems
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band structure
D.J. Chadi et al. PRB, 3058 (1972)
fundamental energy gap
meV 30086 EE meV 30086 EE
semi-metal or semiconductor
HgTe
-1.0 -0.5 0.0 0.5 1.0k (0.01 )
-1500
-1000
-500
0
500
1000
E(m
eV) 8
6
7
-1.0 -0.5 0.0 0.5 1.0k (0.01 )
-1500
-1000
-500
0
500
1000
E(m
eV) 8
6
7
Eg
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Type-III QW
VBO = 570 meV
HgCdTeHgCdTeHgTe
HgCdTe
HH1E1
QW < 63 Å
HgTe
inverted normal
band structure
conduction band
valence band
HgTe-Quantum Wells
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Observation of QSHI state
M. König et al., Science 318, 766 (2007).
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-1.0 -0.5 0.0 0.5 1.0 1.5 2.0103
104
105
106
G = 2 e2/h
Rxx
/
(VGate- Vthr) / V
Observation of QSH Effect
(1 x 0.5) m2
(1 x 1) m2(2 x 1) m2
(1 x 1) m2
non-inverted
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Bulk HgTe as a 3-D Topological ‚Insulator‘
-1.0 -0.5 0.0 0.5 1.0k (0.01 )
-1500
-1000
-500
0
500
1000
E(m
eV) 8
6
7
-1.0 -0.5 0.0 0.5 1.0k (0.01 )
-1500
-1000
-500
0
500
1000
E(m
eV) 8
6
7
Bulk HgTe is semimetal,
topological surface state overlaps with valence band.
k(1/a)
E-E F
(eV)
ARPES: Yulin Chen, ZX Shen,
StanfordC. Brüne et al., Phys. Rev. Lett. 106, 126803 (2011).
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70 nm layer on CdTe substrate:coherent strain opens gap
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0 2 4 6 8 10 12 14 160
2000
4000
6000
8000
10000
12000
14000
16000
0
2000
4000
6000
8000
10000
12000
14000
Rxx (SdH)
Rxx
in O
hm
B in Tesla
Rxy (Hall)
Rxy
in O
hm
Bulk HgTe as a 3-D Topological ‚Insulator‘
@ 20 mK: bulk conductivity almost frozen out - Surface state mobility ca. 35000 cm2/Vs
C. Brüne et al., Phys. Rev. Lett. 106, 126803 (2011).
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Experiments on a gatedHallbar
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0 2 4 6 8 10 12 14 16
-10
12
34
5 0
5
10
15
20
25
Vgate [V]
B [T]
Rxy
[k
]
Rxy from -1.5V to 5V
C. Brüne et al., Phys. Rev. X 4, 041045 (2014).
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Josephson junction on 3D TI
▻ induced gap
▻ length
▻ width
▻ ballistic between contacts
▻ reproducible
1.5 μm
Nb electrode
HgTe mesaHgTe mesa
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I-V curves
I-V curves▻ hysteresis ⇒ self-heating?
▻ excess current ⇒ Andreev reflection at S-TI interfaces
Courtois et al., PRL 101 067002 (2008)Blonder et al., PRB 25, 4515 (1982)
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Excess current
Excess current▻ high biases : 2 S/N interfaces
▻ sign of Andreev reflectionBlonder et al., PRB 25, 4515 (1982)
Klapwijk et al., Physica B+C 109, 1657 (1982)
Sign of midgap states?▻ halved onset
▻ role of induced DOS ?
Badiane et al., PRL 107, 177002 (2011)San Jose et al., NJP 15, 075019 (2013)
trivial topological
MBS
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T 25 mKJust DC
Could of course just be inhomogeneouscurrent injection.
Need otherexperiments toidentify exoticsuperconductivity.
J. Oostinga et al., Phys. Rev. X 3, 021007 (2013).
Sample with two contacts shows somewhat irregular ‚Fraunhofer‘ pattern.
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Midgap Modesin Josephson Junctions
Midgap mode related to Majorana fermions.4 pi periodicity leads to fractional Josephson effect,i.e. missing odd steps in Shapiro response.( D.M. Badiane, M. Houzet, J.S. Meyer, Phys. Rev. Lett., 107, 177002, (2011),F. Domínguez, F.Hassler, G.Platero, Phys. Rev. B 86, 140503(R) (2012), P. San-Jose, E. Prada, R. Aguado, Phys. Rev. Lett. 108, 257001 (2012) )
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•Measurements: RF irradiation via open coaxial
• Shapiro steps clearly visible: normalized by hf/2e ( conventional 2π)
• Bin diagrams allow easy comparison
Shapiro Steps in Josephson Junctions
J. Wiedenmann et al.,Nat.Comm. 7, 10303 (2016).
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Simulations (similar to Gonzalez et al.):
- Skew CPR gives extra half plateaus (@ high rf power), need sin /2 contribution forsuppression of first plateau.
- Frequency dependence of effect disfavors Landau Zener mechanism. LZ wouldalso require improbably large transmission, D>0.996 .
- 4 contribution to supercurrent about 150 nA – compared with 60 nA/mode- Zero energy Andreev mode?
Low RF frequency High RF frequency
Modeling
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Quantum spin Hall junction
Quantum spin Hall sample– HgTe quantum well (8 nm)– Inverted band structure– High mobility: 2 105 cm2V-1s-1
Josephson junctions– Ti/Al contacts/HfO2 Au gate– No overlap of edge states– Ballistic/ intermediate regime– L~ξ<<l
HgTeHg0.3Cd0.7Te
AlHfO2/Au
2μm
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Shapiro stepsin QSH 2D Josephson junctions
So far :
▻ all previous features visible
▻ odd steps missing up to n=9
E. Bocquillon et al., Nature Nanotechn. 12, 137 (2017).
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Detecting Josephson Radiation
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Setup
Sensitivity ≈ 0.1 fWMeasurement Range 2-10 GHz
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Emission spectra
▻ voltage V swept▻ integrated power at fd=3 GHz
(in 8 MHz bandwidth)
▻ trivial QW : signal at fd=fJ▻ topological QW : at fd=fJ and fJ/2
Trivial QW Topological QW
R. Deacon et al., Phys. Rev. X 7, 021011 (2017)
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Josephson Radiation from 2D TI
Topological:• fJ in valence and conduction band• fJ/2 in the gap and conduction band • Linewidth fJ/2 > fJ• (coherence time τ2π =3- 4 ns / τ´4π =0.3- 4 ns)
Trivial: conventional line fJover the whole gate range
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Gate voltage dependence
QSH regime▻ mostly fJ/2
n regime▻ fJ/2 at low fd
▻ fJ/2+fJ at high fd
p regime▻ fJ/2+fJ at low fd▻ fJ at high fd
QSH n regimep regime
R. Deacon et al., Phys. Rev. X 7, 021011 (2017)
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Strained Superlattices
Using CdZnTe/CdTe superlattices
on a GaAs substrate:
can adjust strain from tensile to
compressive.
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Strain Engineering in QWs
Tensile strain yields semimetal;
Compressive strain yields gap up to 60 meV. P. Leubner et al., Phys. Rev. Lett. 117, 086403 (2016).
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8 band develops Dirac/Weyl points
Compressive Strainin bulk HgTe
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Conclusions
– HgTe: can be made into 2D and 3D Topological Insulator
– TI behavior very obvious in transport
– Superconducting proximity in both 2D and 3D
– See clear signs of exotic –topological- superconductivity
– Strain Engineering offers larger gaps in 2D, Dirac/Weyl systems in 3DCollaborators:Erwann Bocquillon, Christoph Brüne, Hartmut Buhmann, Philipp Leubner, Martin Stehno, Jonas Wiedenmann (Würzburg); Amir Yacoby (Harvard), Russell Deacon, Koji Ishibashi, Seigo Tarucha (Tokyo); Teun Klapwijk (Delft & Würzburg)
Theory: Ewelina Hankiewicz, Björn Trauzettel (Würzburg)
Funding: Freistaat Bayern (ENB, ITI), DFG (SPP Topological Insulators, SFB 1170, Leibniz project), Humboldt Stiftung, EU-ERC AGs “3-TOP”, “4 TOPS”,