lecture 8
DESCRIPTION
Power Electronics NotesTRANSCRIPT
Department of Department of Electrical
EngineeringElectrical Engineering
ni!ersit" of #ordanni!ersit" of #ordan
1
semiconductor de!ice.semiconductor de!ice.
%a!e the highest power handling%a!e the highest power handling
capa&ilit".the" ha!e a rating ofcapa&ilit".the" ha!e a rating of
' * +, with switching' * +, with switching
0K%/.0K%/.
3
1s inherentl" a slow switching de!ice1s inherentl" a slow switching de!ice
compared to 2#$ or M345E$.compared to 2#$ or M345E$.
sed as a latching switch that can &esed as a latching switch that can &e
} }
} }
G a t e C a t h o d e
J 3
J 2
J 1
1 0 c m 1 7 - 3
1 0 - 5 x 1 0 c m 1 3 1 4 - 3
1 0 c m 1 7 - 3
1 0 c m 1 9 - 3
1 0 c m 1 9 - 3
1 0 c m 1 9 - 3
n +
n +
p -
n –
p
p +
5 0 - 1 0 0 0 mµ
3 0 - 5 0 mµ
th"ristorth"ristor
⇒⇒
1
1
C k CBO
I I I
7haracteris7haracteris
A n o d e c u r r e n t
b e g n ! t o d e c r e a ! e
t C
t "
t
t
C o m m u t a t o n d d t
# e c o $ e r % # e c o m b n a t o n
t 1 t 2 t 3 t 4 t 5
t r r t g r
t "
t " ) d e $ c e o * * t m e
dt dt
dt dt
Switching Characteristics (linearized)
$hermal $urn:on. $hermal $urn:on.
aluealue
non:repetiti!enon:repetiti!e
=ate:turn:o6 $h"ristors (=$3s).=ate:turn:o6 $h"ristors (=$3s).
2idirectional triode $h"ristors2idirectional triode $h"ristors
($1,7s).($1,7s).
Light:acti!ated silicon:controlledLight:acti!ated silicon:controlled
5E$ controlled $h"ristors (5E$:7$%s).5E$ controlled $h"ristors (5E$:7$%s).
M34 controlled $h"ristors (M7$s).M34 controlled $h"ristors (M7$s).
P%,4E:73?$3L $%A14$34 ; primaril" for rectif"ingP%,4E:73?$3L $%A14$34 ; primaril" for rectif"ing line fre-uenc" !oltage and currents (phase controlledline fre-uenc" !oltage and currents (phase controlled ,7 and D7 motor dri!ers and high !oltage power,7 and D7 motor dri!ers and high !oltage power transmission). ,!erage current B,C &lockingtransmission). ,!erage current B,C &locking !oltage ':k and on:state !oltage .':!oltage ':k and on:state !oltage .':
1?E$E:=,DE $%A14$34; small turn:o6 times1?E$E:=,DE $%A14$34; small turn:o6 times (from a few(from a few FFs tos toFFs depends on their &lockings depends on their &locking !oltage and on:state !oltage drops)C and small on:!oltage and on:state !oltage drops)C and small on: state !oltageCstate !oltageC
0':',.0':',.
De!icesDe!ices
De!ices..De!ices..
?P? 2#$ G ?P? 2ipolar #unction $ransistor?P? 2#$ G ?P? 2ipolar #unction $ransistor 1=2$ G 1nsulated =ate 2ipolar #unction1=2$ G 1nsulated =ate 2ipolar #unction $ransistor $ransistor
?:7hannel M345E$ G ?:7hannel Metal?:7hannel M345E$ G ?:7hannel Metal 3Hide 4ilicon 5ield E6ect $ransistor3Hide 4ilicon 5ield E6ect $ransistor
7haracteristics7haracteristics
34
7%,,7$E14$1747%,,7$E14$174
35
$h"ristor $h"ristor $hese are con!erter th"ristors. $hese are con!erter th"ristors.
$he turn:o6 time t $he turn:o6 time t-- is in the order ofis in the order of
' to ' to µµsec.sec.
sed for low switching fre-uenc".sed for low switching fre-uenc".
7ommutation is natural commutation7ommutation is natural commutation
3n state !oltage drop is .' for a3n state !oltage drop is .' for a
+ de!ice.+ de!ice.
sed for high speed switchingsed for high speed switching
applications.applications.
$urn:o6 time t $urn:o6 time t-- in the range of ' toin the range of ' to
''µµsec.sec.
3n:state !oltage drop of t"picall" .3n:state !oltage drop of t"picall" .
for 00,C 8 th"ristor.for 00,C 8 th"ristor.
$urned on &" appl"ing positi!e gate signal. $urned on &" appl"ing positi!e gate signal.
$urned o6 &" appl"ing negati!e gate $urned o6 &" appl"ing negati!e gate
signal.signal.
3n state !oltage is .B for '',C 03n state !oltage is .B for '',C 0
=$3.=$3.
7ontrolla&le peak on:state current 17ontrolla&le peak on:state current 1 $=J $=J isis
the peak !alue of on:state current whichthe peak !alue of on:state current which
can &e turned:o6 &" gate control.can &e turned:o6 &" gate control.
Elimination of commutatingElimination of commutating
components.components.
electromagnetic noise due toelectromagnetic noise due to
elimination of chokes.elimination of chokes.
5aster turn:o6C therefore can &e used5aster turn:o6C therefore can &e used
for higher switching fre-uencies.for higher switching fre-uencies.
1mpro!ed ecienc" of con!erters.1mpro!ed ecienc" of con!erters.
%igher !oltage &locking capa&ilities.%igher !oltage &locking capa&ilities.
%igh on:state gain.%igh on:state gain.
%igh ratio of peak surge current to%igh ratio of peak surge current to
a!erage current.a!erage current.
, pulsed gate signal of short duration, pulsed gate signal of short duration
onl" is re-uired.onl" is re-uired.
3n:state !oltage drop is more.3n:state !oltage drop is more.
Due to multi cathode structureDue to multi cathode structure
higher gate current is re-uired.higher gate current is re-uired.
=ate dri!e circuit losses are more.=ate dri!e circuit losses are more.
e!erse &locking capa&ilit" is lesse!erse &locking capa&ilit" is less
,nti:parallel diode connected across,nti:parallel diode connected across
47 on the same silicon chip.47 on the same silicon chip.
$his diode clamps the re!erse $his diode clamps the re!erse
&locking !oltage to or 0.&locking !oltage to or 0.
7$ also called ,s"mmetrical7$ also called ,s"mmetrical
$h"ristor (,47). $h"ristor (,47).
$urned:on &" appl"ing positi!e gate $urned:on &" appl"ing positi!e gate
!oltage.!oltage.
!oltage.!oltage.
Minorit" carrier de!ice.Minorit" carrier de!ice.
Low on:state resistance I low !oltage drop.Low on:state resistance I low !oltage drop.
5ast switching speeds I high d!*dt I high5ast switching speeds I high d!*dt I high
di*dt capa&ilities.di*dt capa&ilities.
52
4witching time in order of to +4witching time in order of to +
µµsec.sec.
$he rating can go upto 0' * ',. $he rating can go upto 0' * ',.
Process sensiti!e.Process sensiti!e.
silicon wafer.silicon wafer.
=ate structure is sensiti!e for=ate structure is sensiti!e for
triggering from practical light sources.triggering from practical light sources.
sed in high !oltage and high currentsed in high !oltage and high current
applications. EHample; %D7applications. EHample; %D7
transmissionC 4tatic reacti!e powertransmissionC 4tatic reacti!e power
compensation.compensation.
&etween light triggering source I&etween light triggering source I
power circuit.power circuit.
',.',.
&i'%lar !ncti%n ransist%rs (&)
M345E$ I aM345E$ I a
th"ristor inth"ristor in
parallel asparallel as
di*dt I d!*dt.di*dt I d!*dt.
th"ristors.th"ristors.
7annot &e turned o6 &" gate control.7annot &e turned o6 &" gate control.
,pplication of these are where,pplication of these are where
60
M34:7ontrolledM34:7ontrolled
$h"ristor $h"ristor ?ew de!ice that has &ecome?ew de!ice that has &ecome
commerciall" a!aila&le.commerciall" a!aila&le.
2asicall" a th"ristor with two2asicall" a th"ristor with two
M345E$s &uilt in the gate structure.M345E$s &uilt in the gate structure.
3ne M345E$ for turning 3? the M7$3ne M345E$ for turning 3? the M7$
64
5eatures5eatures
Low on:state losses I large currentLow on:state losses I large current
capa&ilities.capa&ilities.
%igh switching speeds achie!ed due%igh switching speeds achie!ed due
to fast turn:on I turn:o6.to fast turn:on I turn:o6.
Low re!erse &locking capa&ilit".Low re!erse &locking capa&ilit".
65
=ate controlled possi&le if current is=ate controlled possi&le if current is
less than peak controlla&le current.less than peak controlla&le current.
=ate pulse width not critical for=ate pulse width not critical for
smaller de!ice currents.smaller de!ice currents.
=ate pulse width critical for turn:o6=ate pulse width critical for turn:o6
for larger currents.for larger currents.
"S*+s
,d!antages of 1=2$,d!antages of 1=2$
7om&ines the ad!antages of 2#$ I M345E$7om&ines the ad!antages of 2#$ I M345E$
%igh input impedance like M345E$%igh input impedance like M345E$
oltage controlled de!ice like M345E$oltage controlled de!ice like M345E$
4imple gate dri!eC Lower switching loss4imple gate dri!eC Lower switching loss
Low on state conduction power loss like 2#$Low on state conduction power loss like 2#$
%igher current capa&ilit" I higher switching%igher current capa&ilit" I higher switching
speed than a 2#$. ( 4witching speed lowerspeed than a 2#$. ( 4witching speed lower
than M345E$)than M345E$)
ac and dc motor controls.ac and dc motor controls.
=eneral purpose in!erters.=eneral purpose in!erters.
ninterrupted Power 4uppl" (P4).ninterrupted Power 4uppl" (P4).
>elding E-uipments.>elding E-uipments.
o&otics I 1nduction heating.o&otics I 1nduction heating.
79
ni!ersit" of #ordanni!ersit" of #ordan
1
semiconductor de!ice.semiconductor de!ice.
%a!e the highest power handling%a!e the highest power handling
capa&ilit".the" ha!e a rating ofcapa&ilit".the" ha!e a rating of
' * +, with switching' * +, with switching
0K%/.0K%/.
3
1s inherentl" a slow switching de!ice1s inherentl" a slow switching de!ice
compared to 2#$ or M345E$.compared to 2#$ or M345E$.
sed as a latching switch that can &esed as a latching switch that can &e
} }
} }
G a t e C a t h o d e
J 3
J 2
J 1
1 0 c m 1 7 - 3
1 0 - 5 x 1 0 c m 1 3 1 4 - 3
1 0 c m 1 7 - 3
1 0 c m 1 9 - 3
1 0 c m 1 9 - 3
1 0 c m 1 9 - 3
n +
n +
p -
n –
p
p +
5 0 - 1 0 0 0 mµ
3 0 - 5 0 mµ
th"ristorth"ristor
⇒⇒
1
1
C k CBO
I I I
7haracteris7haracteris
A n o d e c u r r e n t
b e g n ! t o d e c r e a ! e
t C
t "
t
t
C o m m u t a t o n d d t
# e c o $ e r % # e c o m b n a t o n
t 1 t 2 t 3 t 4 t 5
t r r t g r
t "
t " ) d e $ c e o * * t m e
dt dt
dt dt
Switching Characteristics (linearized)
$hermal $urn:on. $hermal $urn:on.
aluealue
non:repetiti!enon:repetiti!e
=ate:turn:o6 $h"ristors (=$3s).=ate:turn:o6 $h"ristors (=$3s).
2idirectional triode $h"ristors2idirectional triode $h"ristors
($1,7s).($1,7s).
Light:acti!ated silicon:controlledLight:acti!ated silicon:controlled
5E$ controlled $h"ristors (5E$:7$%s).5E$ controlled $h"ristors (5E$:7$%s).
M34 controlled $h"ristors (M7$s).M34 controlled $h"ristors (M7$s).
P%,4E:73?$3L $%A14$34 ; primaril" for rectif"ingP%,4E:73?$3L $%A14$34 ; primaril" for rectif"ing line fre-uenc" !oltage and currents (phase controlledline fre-uenc" !oltage and currents (phase controlled ,7 and D7 motor dri!ers and high !oltage power,7 and D7 motor dri!ers and high !oltage power transmission). ,!erage current B,C &lockingtransmission). ,!erage current B,C &locking !oltage ':k and on:state !oltage .':!oltage ':k and on:state !oltage .':
1?E$E:=,DE $%A14$34; small turn:o6 times1?E$E:=,DE $%A14$34; small turn:o6 times (from a few(from a few FFs tos toFFs depends on their &lockings depends on their &locking !oltage and on:state !oltage drops)C and small on:!oltage and on:state !oltage drops)C and small on: state !oltageCstate !oltageC
0':',.0':',.
De!icesDe!ices
De!ices..De!ices..
?P? 2#$ G ?P? 2ipolar #unction $ransistor?P? 2#$ G ?P? 2ipolar #unction $ransistor 1=2$ G 1nsulated =ate 2ipolar #unction1=2$ G 1nsulated =ate 2ipolar #unction $ransistor $ransistor
?:7hannel M345E$ G ?:7hannel Metal?:7hannel M345E$ G ?:7hannel Metal 3Hide 4ilicon 5ield E6ect $ransistor3Hide 4ilicon 5ield E6ect $ransistor
7haracteristics7haracteristics
34
7%,,7$E14$1747%,,7$E14$174
35
$h"ristor $h"ristor $hese are con!erter th"ristors. $hese are con!erter th"ristors.
$he turn:o6 time t $he turn:o6 time t-- is in the order ofis in the order of
' to ' to µµsec.sec.
sed for low switching fre-uenc".sed for low switching fre-uenc".
7ommutation is natural commutation7ommutation is natural commutation
3n state !oltage drop is .' for a3n state !oltage drop is .' for a
+ de!ice.+ de!ice.
sed for high speed switchingsed for high speed switching
applications.applications.
$urn:o6 time t $urn:o6 time t-- in the range of ' toin the range of ' to
''µµsec.sec.
3n:state !oltage drop of t"picall" .3n:state !oltage drop of t"picall" .
for 00,C 8 th"ristor.for 00,C 8 th"ristor.
$urned on &" appl"ing positi!e gate signal. $urned on &" appl"ing positi!e gate signal.
$urned o6 &" appl"ing negati!e gate $urned o6 &" appl"ing negati!e gate
signal.signal.
3n state !oltage is .B for '',C 03n state !oltage is .B for '',C 0
=$3.=$3.
7ontrolla&le peak on:state current 17ontrolla&le peak on:state current 1 $=J $=J isis
the peak !alue of on:state current whichthe peak !alue of on:state current which
can &e turned:o6 &" gate control.can &e turned:o6 &" gate control.
Elimination of commutatingElimination of commutating
components.components.
electromagnetic noise due toelectromagnetic noise due to
elimination of chokes.elimination of chokes.
5aster turn:o6C therefore can &e used5aster turn:o6C therefore can &e used
for higher switching fre-uencies.for higher switching fre-uencies.
1mpro!ed ecienc" of con!erters.1mpro!ed ecienc" of con!erters.
%igher !oltage &locking capa&ilities.%igher !oltage &locking capa&ilities.
%igh on:state gain.%igh on:state gain.
%igh ratio of peak surge current to%igh ratio of peak surge current to
a!erage current.a!erage current.
, pulsed gate signal of short duration, pulsed gate signal of short duration
onl" is re-uired.onl" is re-uired.
3n:state !oltage drop is more.3n:state !oltage drop is more.
Due to multi cathode structureDue to multi cathode structure
higher gate current is re-uired.higher gate current is re-uired.
=ate dri!e circuit losses are more.=ate dri!e circuit losses are more.
e!erse &locking capa&ilit" is lesse!erse &locking capa&ilit" is less
,nti:parallel diode connected across,nti:parallel diode connected across
47 on the same silicon chip.47 on the same silicon chip.
$his diode clamps the re!erse $his diode clamps the re!erse
&locking !oltage to or 0.&locking !oltage to or 0.
7$ also called ,s"mmetrical7$ also called ,s"mmetrical
$h"ristor (,47). $h"ristor (,47).
$urned:on &" appl"ing positi!e gate $urned:on &" appl"ing positi!e gate
!oltage.!oltage.
!oltage.!oltage.
Minorit" carrier de!ice.Minorit" carrier de!ice.
Low on:state resistance I low !oltage drop.Low on:state resistance I low !oltage drop.
5ast switching speeds I high d!*dt I high5ast switching speeds I high d!*dt I high
di*dt capa&ilities.di*dt capa&ilities.
52
4witching time in order of to +4witching time in order of to +
µµsec.sec.
$he rating can go upto 0' * ',. $he rating can go upto 0' * ',.
Process sensiti!e.Process sensiti!e.
silicon wafer.silicon wafer.
=ate structure is sensiti!e for=ate structure is sensiti!e for
triggering from practical light sources.triggering from practical light sources.
sed in high !oltage and high currentsed in high !oltage and high current
applications. EHample; %D7applications. EHample; %D7
transmissionC 4tatic reacti!e powertransmissionC 4tatic reacti!e power
compensation.compensation.
&etween light triggering source I&etween light triggering source I
power circuit.power circuit.
',.',.
&i'%lar !ncti%n ransist%rs (&)
M345E$ I aM345E$ I a
th"ristor inth"ristor in
parallel asparallel as
di*dt I d!*dt.di*dt I d!*dt.
th"ristors.th"ristors.
7annot &e turned o6 &" gate control.7annot &e turned o6 &" gate control.
,pplication of these are where,pplication of these are where
60
M34:7ontrolledM34:7ontrolled
$h"ristor $h"ristor ?ew de!ice that has &ecome?ew de!ice that has &ecome
commerciall" a!aila&le.commerciall" a!aila&le.
2asicall" a th"ristor with two2asicall" a th"ristor with two
M345E$s &uilt in the gate structure.M345E$s &uilt in the gate structure.
3ne M345E$ for turning 3? the M7$3ne M345E$ for turning 3? the M7$
64
5eatures5eatures
Low on:state losses I large currentLow on:state losses I large current
capa&ilities.capa&ilities.
%igh switching speeds achie!ed due%igh switching speeds achie!ed due
to fast turn:on I turn:o6.to fast turn:on I turn:o6.
Low re!erse &locking capa&ilit".Low re!erse &locking capa&ilit".
65
=ate controlled possi&le if current is=ate controlled possi&le if current is
less than peak controlla&le current.less than peak controlla&le current.
=ate pulse width not critical for=ate pulse width not critical for
smaller de!ice currents.smaller de!ice currents.
=ate pulse width critical for turn:o6=ate pulse width critical for turn:o6
for larger currents.for larger currents.
"S*+s
,d!antages of 1=2$,d!antages of 1=2$
7om&ines the ad!antages of 2#$ I M345E$7om&ines the ad!antages of 2#$ I M345E$
%igh input impedance like M345E$%igh input impedance like M345E$
oltage controlled de!ice like M345E$oltage controlled de!ice like M345E$
4imple gate dri!eC Lower switching loss4imple gate dri!eC Lower switching loss
Low on state conduction power loss like 2#$Low on state conduction power loss like 2#$
%igher current capa&ilit" I higher switching%igher current capa&ilit" I higher switching
speed than a 2#$. ( 4witching speed lowerspeed than a 2#$. ( 4witching speed lower
than M345E$)than M345E$)
ac and dc motor controls.ac and dc motor controls.
=eneral purpose in!erters.=eneral purpose in!erters.
ninterrupted Power 4uppl" (P4).ninterrupted Power 4uppl" (P4).
>elding E-uipments.>elding E-uipments.
o&otics I 1nduction heating.o&otics I 1nduction heating.
79