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    Lecture 6 Logic gates :

    Power and Other LogicFamily

    Pradondet Nilagupta

    [email protected]

    Department of Computer Engineering

    Kasetsart University

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    #

    Acknowledgement

    'his lecture note has (een summari)ed fromlecture note on *ntroduction to +,-* Design"

    +,-* Circuit Design all over the orld. * can/t

    remem(er here those slide come from.0oever" */d like to thank all professors ho

    create such a good ork on those lecture

    notes. 1ithout those lectures" this slide can/t

    (e finished.

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    2

    Parasitics and Performance

    Consider the folloinglayout3

    1hat is the impact on

    performance of

    parasitics &t point a 4+DD rail56

     &t point ( 4input56

     &t Point c 4output56

    b

    a

    c

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    %

    Parasitics and Performance

    a 7 poer supplyconnections capacitance 7 no effect

    on delay

    resistance 7 increasesdelay 4see p. 285

    minimi)e (y reducing

    difffusion length

    minimi)e using parallelvias

    b

    a

    c

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    8

    Parasitics and Performance

    ( 7 gate input capacitance increases

    delay on previous stage

    4often transistor gates

    dominate5 resistance increases

    delay on previous stageb

    a

    c

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    !

    Parasitics and Performance

    c 7 gate output resistance" capacitance

    increase delay

    9esistance :

    capacitance ;near; tooutput causes additional

    delay b

    a

    c

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    Driving Large Loads

    =ff7chip loads" long ires" etc. have high capacitance *ncreasing transistor si)e increases driving a(ility 4and

    speed5" (ut in turn increases gate capacitance

    -olution3 stages of progressively larger transistors

    Use nopt > ln4C(ig?Cg5.

    -cale (y a factor of α>e

    Cbig

    pullup: W p /Lp

    pulldown: W n /Ln

    pullup:αWp /Lp

    pulldown: αWn /Ln

    pullup:α

    2

    Wp /Lp

    pulldown: α2Wn /Ln

    n stages

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    Summary: Static CMOS

     &dvantages 0igh Noise Margins 4+=0>+DD" +=,>And5

    No static poer consumption 4eBcept for leakage5

    Compara(le rise and fall times 4ith proper si)ing5

    9o(ust and easy to use

    Disadvantages

    ,arge transistor counts 4#N transistors for N inputs5

    ,arger area

    More parasitic loading 4# transistor gates on each input5

    Pullup issues ,oer driving capa(ility of P transistors

    -eries connections especially pro(lematic

    -i)ing helps" (ut increases loading on gate inputs

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    Alternatives to Static CMOS

    -itch ,ogic nmos

    Pseudo7nmos

    Dynamic ,ogic

    ,o7Poer Aates

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    Switch Logic

    Key idea3 use transistors assitches

    Concern3 sitches are

    (idirectional

    AND

    A B

    A

    B

    OR

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    Switch Logic - Pass ransistors

    Use n7transistor as sitches 'hreshold pro(lem'ransistor sitches off  hen +gs F +t

    +DD input 7G +DD7+t output

    -pecial gate needed to restore

    values

    IN:VDD

    A: VDD

    OUT:VDD-Vtn

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    Switch Logic - ransmission!ates

    Complementary transistors 7 n and pNo threshold pro(lem

    Cost3 eBtra transistor" eBtra control

    inputNot a perfect conductorH

    A

    A’

    A

    A’

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    Switch Logic "#am$le - %-& M'(

    IN

    IN1

    IN2

    SEL’

    SEL

    SEL

    OUT

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    Charge Sharing

    Consider transmission gates in series Each node has parasitic capacitances

    Pro(lems occur hen inputs change to redistri(ute

    charge

    -olution3 design netork so there is alays a path

    from +DD or And to outputA B C

    A’ B’ C’

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    Aside: ransmission !ates inAnalog

    'ransmission Aates orkith analog values" tooH

    EBample3

    +oltage7-caling D?&Converter 

    S0

    S0’S1

    S1’S2

    S2’

    S3

    S3’

    OUT

    R

    R

    R

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    )MOS Logic

    Used (efore CM=- as idely availa(le Uses only n transistors

    Normal n transistors in pull7don

    netork

    depletion7mode n transistor

    4+t F $5 used for pull7up

    ;ratioed logic; reIuired

    'radeoffs3

    J -impler processing

    J -maller gates7 higher poerH

    7  &dditional design considerations

    for ratioed logic

    Passive Pullup Device:depletion Moden-transistor (Vt < 0)

    OUT Pulldown

    Network 

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    Pseudo-nmos Logic

    -ame idea" as nmos" (ut use p7transistor for pullup

    ;ratioed logic; reIuired for proper

    design 4more a(out this neBt5

    'radeoffs3

    J eer transistors 7G smaller gates"

    esp. for large num(er of inputs

    J less capacitative load on gates that

    drive inputs

     L

    larger poer consumption L less noise margin 4+=, G $5

     L additional design considerations

    due to ratioed logic

    Passive Pullup Device:P-Transistor

    OUT Pulldown

    Network 

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    *atioed Logic for Pseudo-nmos

     &pproach3  &ssume +=U'>+=, >$.#8+DD  &ssume pulldon transistor is on

    EIuate currents in p" n transistors

    -olve for ratio (eteen si)es of p" ntransistors to get these conditions

    urther calculations necessary for

    series connectionsIdn   = Ipn

    12

    k' n WnLn

    Vgs,n − Vtn( )2 = 12 k' pW

    pLp

    2 Vgs,p  − Vtp( )Vds,p − Vds,p2[ ]  (EQ 3 − 21)Wp

    Lp

    WnLn

    ≈ 3.9 (EQ 3 − 22) − Assu ming VDD   = 3.3V

    IdpOUT 

    Pulldown

    Network 

    Idn

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    DC+S Logic

    DC+- 7 Differential Cascode +oltage-itch

    Differential inputs" outputs

    'o pulldon netorks

    'radeoffsJ ,oer capacitative loading

    than static CM=-

    J No ratioed logic needed

    J ,o static poer consumption7 More transistors

    7 More signals to route (eteen gates

    7 EBample3 ig. 2.# p. %

    OUTPulldownNetwork

    OUT’ 

    OUT’PulldownNetwork

    OUT 

    A’ 

    B’ 

    C’ 

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    Pulldown

    Network 

    CS

    φ

    φ

    A

    B

    C

    Dynamic Logic

    Key idea3 'o7step operationprecharge 7 charge C- to logic

    high

    evaluate 7 conditionally

    discharge C-

    Control 7 precharge clock φ

    Storage Node

    StorageCapacitance

    PrechargeSignal

    Precharge Evaluate Precharge

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    Domino Logic

    Key idea3 dynamic gate J inverter  Cascaded gates 7 monotonically

    increasing

    Pulldown

    Network 

    CS

    φ

    φ

    B

    C

    in4   x1  x2

    x31

    01

    φ

    in4

    x1

    x2

    x3

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    Domino Logic radeoffs

    J eer transistors 7G smaller gatesJ ,oer poer consumption than pseudo7nmos

    7 Clocking reIuired

    7 ,ogic not complete 4&ND" =9" (ut no N='5

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    More echni,ues for SavingPower 

    9educe +DD 4tradeoff3 delay5 Multiple Poer -upplies

    0igh +DD for fast logic

    ,o +DD for slo logic

    4level translation an issue5

    DC-, 7 ig. 2728" p. 88

    cross7coupled outputs

    partially disconnected pulldon netork

    Dealing ith leakage currents 4p. 85

    Multiple7'hreshold CM=- 4M'CM=-5 7 ig 272<

    +aria(le7'hreshold CM=- 4+'CM=-5 7 ig 272

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    Delay in Long ires - Lum$ed *CModel

    1hat is the delay in a long ire6

    ,umped 9C Model3

    Delay time constant 4ignoring driving gate5

    τ > 9 C > 49s  , ? 15 4, 1 Cplate 5

    > r c ,#

    Pro(lem3 =verly Pessimistic

    Lin out

    R = Rs * L / W = r*L

    (r = Rs / W - resistance per unit length )

    C = L * W * Cplate = c*L

    (c = W * Cplate - capacitance per unit length)

    RC

    in out

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    #8

    Delay in Long ires -Distri.uted *C Model

     &lternative3 reak ire into small segments

     &pproB. -olution 7 st moment of impulse response

    *mportant3 delay still gros as sIuare of length

    R1 = r∆L

    in out

    R2 = r∆L Rn = r∆L

    Cn

    c∆

    L

    C2

    c∆

    L

    C1

    c∆

    L

    τ(Vout ) = rc ∆L 2 N N  1 

    2

    τ

    (Vout )=

    rcL2

    2   for N →∞

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    #!

    Delay in Long ires -Conse,uences in design

    Distri(uted 9C model3

    Delay gros as sIuare of ,HChoose ire material that minimi)es r" c

    reak ire into (uffered segments to optimi)e

    delay

    τ(Vout ) =rcL

    2

    2

    in out

    Lin out

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    #<

    "lmore Delay

    Consider 97C ladder netork ith uneIual values

    irst7order time constant at node N is

    irst7order time constant and node I  is

    τN = Rii=1

    N∑

    C j j=i

    N∑

    = Cii=1

    N∑

    R j j=1

    i∑

    τ  i   = C 1 R1 + C 2 ( R1 +  R2 ) + ... + C i ( R1 +  R2 + ... +  Ri )

    R1

    in

    R2 Ri

    CiC2C1

    out

    Rn

    Cn

    1 2 i n

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    #

    "lmore Delay A$$lications

    1ire si)ing to minimi)e delayDelay prediction of compleB netorks

    4as long as they take the form of a ladder5

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    #

    "lmore Delay /omework Pro.lem

    1hat are the Elmore time constants τ" τ#" τ26R1100ž

    in

    R250ž

    R3200ž

    C390fFC2

    70fFC1

    50fF

    1 2 3out

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    2$

    ire Si0ing

    9ecall distri(uted model of ire3 multiple segments

    note strong impact of 9" lesser impact of 9#" etc

    *dea3 9educe overall delay (y tapering segments

    Make -egment idest to reduce 9 4increases C5

    Make -egment # less ide to reduce 9# 4increses C#5

    etc.

    τ  i   = C 1 R1 + C 2 ( R1 +  R2 ) + ... + C i ( R1 +  R2 + ... +  Ri )

    R1

    in out

    R2 Rn

    CnC2C1

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    2

    ire Si0ing

    *deal 9esult ire should taper eBponentially7 see EI. 27#$" p. !2 Ois83

    More pragmatic approach3 step7tapered ire

    [Fis95] J. Fishburn and C. Schevon, “Shaping a distributed-RC line to inii!e

     "lore dela#$, IEEE Trans. on Circuits and Systems-I , %eceber &995, pp. &'('-&'((

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    2#

    1uffer 2nsertion

    Key *dea3 reak long ire up into stages 4-ec. 2.

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    22

    ire Si0ing - )ew *esults

     &lternative approach O&lpert$3 Com(ine (uffer insertion and

    Untapered ires of 4small num(er of5 different idths

    'heoretical result3 'apering gives at (est 2.8Q

    improvement over this approach Practical result3 tapering generally not orthhile[)lpert'&] “*nterconnect S#nthesis +ithout +ire tapering$, IEEE Trans. CAD, ol. (', o. &, Januar# (''&,

     pp. 9'-&'

    in out

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    2%

    Delay in *C-rees

    Many interconnection netorks are treesEBtracted 9C circuit modeling a gate output

    Clock trees

    R1

    in

    R2

    C2

    C1

    1

    2R3

    C3

    3

    R4

    C4

    4

    R5

    C5

    5

    R6

    C6

    6

    o1

    o2

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    28

    Delay in *C-rees:Penfield-*u.enstein 1ounds

    Key idea3 characteri)e time constants in terms of  Path resistances (eteen nodes

    Capacitance values at each node

    R1

    in

    R2

    C2

    C1

    1

    2 R3

    C3

    3

    R4

    C4

    4R5

    C5

    5R6

    C6

    6

    o1

    o2

    Rko = R j ⇒ (R j ∈[path(in→ o)∩ path(k→ o)])

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    Delay in *C-rees:Penfield-*u.enstein 1ounds

    'ime constants 'p" 'Do" '9o 4eIn. 272$ 7 272%5 'a(le 27# 4p. !85 7 (ounds for time" voltage