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    6.012 - Microelectronic Devices and Circuits - Fall 2005  Lecture 12-1 

    Lecture

    12

    - Digital

    Circuits

    (I)

    The inverter

    October20,2005

    Contents:

    1.Introductiontodigitalelectronics: theinverter 

    2.

    NMOS

    inverter

    with

    resistor

    pull

    up

    Reading assignment:

    Howe

    and

    Sodini,

    Ch.

    5,§§5.1-5.3.2

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    6.012 - Microelectronic Devices and Circuits - Fall 2005  Lecture 12-2 

    Key questions 

    •Whatarethekeyfiguresof meritof logiccircuits? 

    •How can one make a  simple inverter using a  singleMOSFET?

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    v

    6.012 - Microelectronic Devices and Circuits - Fall 2005  Lecture 12-3 

    1. Introduction to digital electronics: the in-verter

    In

    digital

    electronics,

    digitally-encoded

    information

    is

    rep-resented

    by

    means

    of 

    two

    distinct

    voltage

    ranges:

    V

    VMAX

    VOH

    VOL

    VMIN

    logic1

    logic0

    undefinedregion

    •logic 0 : V MIN  ≤V  ≤V OL

    logic 

    1:

    V OH  ≤V  ≤V M AX 

    •undefined  logic value: V OL ≤V  ≤V OH .

    Logic

    operations

    are

    performed

    using

    logic 

    gates . 

    Simplest

    logic

    operation

    of 

    all:

    inversion ⇒in erterinverter

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    threshold 

    6.012 - Microelectronic Devices and Circuits - Fall 2005   Lecture 12-4

    2Ideal inverter:

    IN OUT

    1OUT=IN 0

    1

    IN

    0

    Circuit

    representation

    and

    ideal

    transfer

    function: 

    VOUTv+

    V+ VOUT=VIN

    V++ + 2

    VIN VOUT

    - -00 VM=

    V+ V+ VIN2

    Defineswitching point orlogic  :logic threshold :

    V M  ≡ inputvoltageforwhichV OU T  =V IN 

    -for

    0≤V IN  ≤V M  ⇒ V OU T  =V 

    +

    -for

    V M  ≤V IN  ≤V + ⇒ V OU T  = 0

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    re ation  

    v

    6.012 - Microelectronic Devices and Circuits - Fall 2005  Lecture 12-5  

    Key

    property

    of 

    ideal

    inverter:

    signal 

    gener signal regeneration 

    VOUTv+

    V+ VOUT

    =VIN

    V++ + 2

    VOUTVIN

    --00 VM=

    V+ V+ VIN2

    Ideal inverter returns well defined logical outputs (0 orV 

    +)

    even

    in

    the

    presence

    of 

    considerable

    noise

    in

    V IN (from

    voltage

    spikes,

    crosstalk,

    etc.)

    VIN VOUT

    V+ V+

    VM VM

    0 0

    logicle elrestorationlogiclevelrestoration

    noisesuppressionnoisesuppression

    VIN VOUT

    V+ V+

    VM VM

    0 0

    VIN VOUT

    V+ V+

    VM VM

    0 0

    pulseedgesharpeningpulseedgesharpening

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    6.012 - Microelectronic Devices and Circuits - Fall 2005  Lecture 12-6 

    2”Real” inverter:

    VOUT

    VOUT

    0

    slope=-1

    VOH

    VOL

    VMIN

    VMAXlogic1

    logic0

    undefinedregion

    |Av|>1

    V+

    v+

    + +

    - -

    VIN

    0V+ VIN

    Ina realinverter,validlogic levelsdefinedasfollows:

    •logic 0 :

    V M IN  ≡

    output

    voltage

    when

    V IN  =

    +

    V OL ≡smallestoutputvoltagewhereslope=-1

    •logic 1:

    V OH  ≡largestoutputvoltagewhereslope=-1

    V M AX  ≡

    output

    voltage

    when

    V IN  = 0

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    6.012 - Microelectronic Devices and Circuits - Fall 2005  Lecture 12-7 

    Two

    other

    important

    voltages: 

    |Av|1

    noisesuppressedVOUT

    logic1

    logic0

    undefinedregion

    VMAX slope=-1VOH

    edgessharpened

    |Av|

    range

    of 

    valid

    logic

    values

    Key

    to

    signal

    regeneration

    in

    inverter:

    high 

    voltage

    gain high voltage gain 

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    mar 

    6.012 - Microelectronic Devices and Circuits - Fall 2005  Lecture 12-8  

    Quantify

    signal

    regeneration

    through

    noise

    gins .noise margins .

    Consider

    chain

    of 

    two

    inverters:

    noiseM N

    VOH

    VMAX

    VMIN VMIN

    VMAX

    VOUT VIN

    NMH

    NMLVOL

    VIH

    VIL

    inverterM inverterN

    output input

    Define

    noise

    margins :

    N M H  = V OH  −V IH  noisemarginhigh

    N M L = V IL −V OL noisemarginlow

    Whensignaliswithinnoisemargins: 

    •logic1output fromfirst inverter interpretedas logic1

    input

    by

    second

    inverter

    •logic0output fromfirst inverter interpretedas logic0

    input

    by

    second

    inverter

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    6.012 - Microelectronic Devices and Circuits - Fall 2005  Lecture 12-9 

    Simplifications

    for

    hand

    calculations

    Hard

    to

    compute

    Av =−1pointsintransferfunction.

    Approximate

    calculation:

    VOUT

    VOH=VMAX

    VM

    VOL=VMIN0

    VOUT=VIN

    slope=Av(VM)

    0 VIL VMVIH V+ VIN

    • AssumeV OL V M IN  andV OH  V MAX 

    • Tracetangentof transferfunctionatV M  (slope=smallsignalvoltagegainatV M ) 

    • V IL intersectionof tangentwithV OU T  =V MAX 

    • V IH  intersection

    of 

    tangent

    with

    V OU T  =

    V MIN 

    • toenhancenoisemargin: |Av(V M )| ↑

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    6.012 - Microelectronic Devices and Circuits - Fall 2005  Lecture 12-10  

    VOUT

    VIHVIL VM

    VM

    VINV+

    00

    VOL=VMIN

    VOH=VMAX

    VOUT=VIN

    slope=Av(VM)

    V MAX − V M  V MAX − V M |Av(V M )| ⇒ V IL V M  −|Av(V M 

    )|V M 

    − V IL

    V M 

    − V MIN 

    1 V MIN |Av(V M 

    )| ⇒ V IH 

    V M 

    (1+|Av(V M )|

    )−V IH − V M  |Av(V M )|

    Then:

    1NM L

    =V IL

    −V OL

    (V MAX 

    −V MIN 

    )−(V MAX 

    −V M 

    )(1+ )|Av(V M )|

    1NM H 

    =V OH 

    −V IH 

    (V MAX 

    |Av(V M )|)−V MIN 

    )−(V M 

    −V MIN 

    )(1+

    If 

    |Av(V M )| → ∞: 

    N M L → V M  − V MIN  N M H  → V M AX − V M  

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    6.012 - Microelectronic Devices and Circuits - Fall 2005  Lecture 12-11

    2Transient characteristics

    Look

    at

    inverter

    switching

    in

    the

    time

    domain: 

    V OL

    90%

    50%

    10%

    t PHL

    t PLH

    V OH

    t  R

    t CYCLE

    50%

    90%

    10%

    0 t

    V  IN

    V OUT

    0 t

    t  R

    t F

    V OH

    V OL

    t F

    IN OUT

    tR ≡risetimebetween10%and90%of totalswing

    tF  ≡ fall timebetween90%and10%of totalswing

    tP HL ≡propagation delay  from high-to-low between50%

    points

    tP LH ≡propagation delay  from  low-to-high between

    50%

    points

    Propagation delay:  tP  =1

    2(t   +t   )P HL P LH 

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    6.012 - Microelectronic Devices and Circuits - Fall 2005  Lecture 12-13 

    2. NMOS inverter withresistor pull up 

    V+=VDD

    VIN

    VOUT

    IR

    IDCL

    R

    loadcapacitance(fromfollowingstages)

    Features:

    V BS  =

    0

    (typically

    not

    shown)

    •C L summarizescapacitiveloadingof followingstages(other

    logic

    gates,

    interconnect

    lines)

    Basic

    operation:

    if 

    V IN  < V T ,

    MOSFET

    OFF

    V OU T  =

    V DD•if V IN  > V T ,MOSFETON⇒V OU T  small(valueset

    by

    resistor/nMOS

    divider)

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    6.012 - Microelectronic Devices and Circuits - Fall 2005  Lecture 12-14 

    VDD

    VIN

    VR

    VOUT

    IR

    ID

    R

    +

    -

    Transfer

    function

    obtained

    by

    solving:

    I R =I D

    Can solve graphically: I-V characteristics of  pull-up re-sistor

    on

    I D vs.

    V OU T  transistor

    characteristics:

    IR=ID

    0

    1/R

    IR=ID

    1/R

    IR=ID

    1/R

    VDD

    R

    VDD

    R

    0 VR=VDD-VOUT-VDD VR-VDD=-VOUT

    0 VDD VOUT

    0

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    6.012 - Microelectronic Devices and Circuits - Fall 2005  Lecture 12-15 

    Overlap

    I-V

    characteristics

    of 

    resistor

    pull-up

    on

    I-V

    char-acteristics

    of 

    transistor:

    loadline

    VGS=VDD

    VGS=VIN

    VGS=VT

    0 VDD VDS=VOUT

    0

    IR=ID

    VDD

    R

    Transfer

    function: 

    VOUT=VDS

    VDD

    00 VT VDD VIN=VGS

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    6.012 - Microelectronic Devices and Circuits - Fall 2005  Lecture 12-16 

    Logic

    levels:

    VOUT=VDS

    VMAX=VDD

    VM

    VMIN0

    VOUT=VIN

    0 VT VM VDD VIN=VGS

    For

    V M AX ,transistor iscut-off,I D = 0:

    V MAX  =V DD

    For V M IN ,transistor isinlinearregime;solve:

    W  V MIN  V DD−V MINI D = µnC ox(V DD− −V T )V MIN  =I R =

    L 2 R

    For V M ,transistor isinsaturation;solve:

    W I D = µnC ox(V M  −V T )

    2 =

    I R =V DD−V M 

    2L R 

    Will

    continue

    next

    lecture

    with

    analysis

    of 

    noise

    margin

    and

    dynamics...

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    6.012 - Microelectronic Devices and Circuits - Fall 2005  Lecture 12-17  

    Key conclusions 

    •Logic circuits must exhibit noise margins  in whichthey

    are

    inmune

    to

    noise

    in

    input

    signal.

    •Logic circuits must be regenerative: able to restoreclean

    logic

    values

    even

    if 

    input

    is

    noisy.

    •Propagation delay : timeforlogicgatetoperformitsfunction.

    Concept

    of 

    load 

    line:

    graphical

    technique

    to

    visualize

    transfercharacteristicsof inverter.

    •First-order solution (by hand) of  inverter figures of merit

    easy

    if 

    regimes

    of 

    operation

    of 

    transistor

    are

    correctly

    identified.

    For

    more

    accurate

    solutions,

    use

    SPICE

    (or

    other

    cir-cuit

    CAD

    tool).