Document Number: 81810 For technical questions, contact: emittertechsupport@vishay.com www.vishay.comRev. 1.2, 25-Jun-09 1

High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero

TSHG5210Vishay Semiconductors

DESCRIPTIONTSHG5210 is an infrared, 850 nm emitting diode in GaAlAsdouble hetero (DH) technology with high radiant power andhigh speed, molded in a clear, untinted plastic package.

FEATURES Package type: leaded Package form: T-1 Dimensions (in mm): 5 Leads with stand-off Peak wavelength: p = 850 nm High reliability High radiant power High radiant intensity Angle of half intensity: = 10 Low forward voltage Suitable for high pulse current operation High modulation bandwidth: fc = 18 MHz Good spectral matching with CMOS cameras Compliant to RoHS directive 2002/95/EC and in

accordance to WEEE 2002/96/EC Halogen-free according to IEC 61249-2-21 definition

APPLICATIONS Infrared radiation source for operation with CMOS

cameras

High speed IR data transmission Smoke-automatic fire detectors

NoteTest conditions see table Basic Characteristics

NoteMOQ: minimum order quantity

NoteTamb = 25 C, unless otherwise specified

94 8390

PRODUCT SUMMARYCOMPONENT Ie (mW/sr) (deg) p (nm) tr (ns)TSHG5210 230 10 850 20

ORDERING INFORMATIONORDERING CODE PACKAGING REMARKS PACKAGE FORMTSHG5210 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1

ABSOLUTE MAXIMUM RATINGSPARAMETER TEST CONDITION SYMBOL VALUE UNITReverse voltage VR 5 VForward current IF 100 mAPeak forward current tp/T = 0.5, tp = 100 s IFM 200 mASurge forward current tp = 100 s IFSM 1 APower dissipation PV 180 mWJunction temperature Tj 100 COperating temperature range Tamb - 40 to + 85 CStorage temperature range Tstg - 40 to + 100 CSoldering temperature t 5 s, 2 mm from case Tsd 260 CThermal resistance junction/ambient J-STD-051, leads 7 mm,

soldered on PCB RthJA 230 K/W

www.vishay.com For technical questions, contact: emittertechsupport@vishay.com Document Number: 818102 Rev. 1.2, 25-Jun-09

TSHG5210Vishay Semiconductors High Speed Infrared Emitting Diode,

850 nm, GaAlAs Double Hetero

Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature

NoteTamb = 25 C, unless otherwise specified

0

20

40

60

80

100

120

140

160

180

200

0 10 20 30 40 50 60 70 80 90 100

21142 Tamb - Ambient Temperature (C)

P V - Po

we

r D

issi

patio

n (m

W)

RthJA

= 230 K/W

0

20

40

60

80

100

120

0 10 20 30 40 50 60 70 80 90 100Tamb - Ambient Temperature (C)21143

I F - Fo

rwa

rd C

urr

en

t (mA)

RthJA

= 230 K/W

BASIC CHARACTERISTICSPARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT

Forward voltageIF = 100 mA, tp = 20 ms VF 1.5 1.8 V

IF = 1 A, tp = 100 s VF 2.3 VTemperature coefficient of VF IF = 1 mA TKVF - 1.8 mV/KReverse current VR = 5 V IR 10 AJunction capacitance VR = 0 V, f = 1 MHz, E = 0 Cj 125 pF

Radiant intensityIF = 100 mA, tp = 20 ms Ie 140 230 420 mW/sr

IF = 1 A, tp = 100 s Ie 2300 mW/srRadiant power IF = 100 mA, tp = 20 ms e 55 mWTemperature coefficient of e IF = 100 mA TKe - 0.35 %/KAngle of half intensity 10 degPeak wavelength IF = 100 mA p 820 850 880 nmSpectral bandwidth IF = 100 mA 40 nmTemperature coefficient of p IF = 100 mA TKp 0.25 nm/KRise time IF = 100 mA tr 20 nsFall time IF = 100 mA tf 13 nsCut-off frequency IDC = 70 mA, IAC = 30 mA pp fc 18 MHzVirtual source diameter d 3.7 mm

Document Number: 81810 For technical questions, contact: emittertechsupport@vishay.com www.vishay.comRev. 1.2, 25-Jun-09 3

TSHG5210High Speed Infrared Emitting Diode,

850 nm, GaAlAs Double HeteroVishay Semiconductors

BASIC CHARACTERISTICSTamb = 25 C, unless otherwise specified

Fig. 3 - Pulse Forward Current vs. Pulse Duration

Fig. 4 - Forward Current vs. Forward Voltage

Fig. 5 - Radiant Intensity vs. Forward Current

Fig. 6 - Radiant Power vs. Forward Current

Fig. 7 - Relative Radiant Power vs. Wavelength

Fig. 8 - Relative Radiant Intensity vs. Angular Displacement

100

1000

0.01 0.1 1 10 100

tP - Pulse Duration (ms)16031

tP/T = 0.01

0.05

0.2

0.5

0.1

0.02

Tamb < 50 C

I F - Fo

rwa

rd C

urr

en

t (mA)

18873

I F - Fo

rward

Curr

ent (m

A)

1000

100

10

1

VF - Forward Voltage (V)0 2 4

tP = 100 stP/T = 0.001

1 3

1

10

100

1000

10 000

1 10 100 100021307 IF - Forward Current (mA)

I e - R

adia

nt In

tens

ity (m

W/s

r)

tP = 0.1 mstP/T = 0.001

0.1

1

10

100

1000

1 1 0 100 1000 16971 I F - Forward Current (mA)

- R

adia

nt P

owe

r (m

W)

e

800 850- Wavelength (nm)

90016972

0

0.25

0.5

0.75

1.0

1.25

e, re

l - R

elat

ive

Rad

iant

Pow

er

21111 0.6 00.20.4

0.9

0.8

030

10 20

40

50

60

7080

0.7

1.0

I e re

l - R

elat

ive

Rad

iant

Inte

nsity

- An

gula

r Dis

plac

emen

t

www.vishay.com For technical questions, contact: emittertechsupport@vishay.com Document Number: 818104 Rev. 1.2, 25-Jun-09

TSHG5210Vishay Semiconductors High Speed Infrared Emitting Diode,

850 nm, GaAlAs Double Hetero

PACKAGE DIMENSIONS in millimeters

(4.7)

12.5

0

.3

A C

35.5

0

.55

< 0

.7

1.1 0.25

0.5 + 0.15- 0.05

5 0.15

2.54 nom.

0.5 + 0.15- 0.05

5

.8

0.1

5

8.7

0.

3

7.7

0.

15

1 m

in.

Area not plane

technical drawingsaccording to DINspecifications

R 2.49 (sphere)

6.544-5258.02-4Issue: 6; 19.05.0995 10916

Document Number: 91000 www.vishay.comRevision: 18-Jul-08 1

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